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Sidewall Passivation of Alxga1−Xas Homojunctions with Wet Chemicals and Field-Effect Passivation by Ald Oxides and Nitrides

https://doi.org/10.2139/ssrn.4803086
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inferredcites →https://doi.org/10.1002/1099-159x(200009/10)8:5<473::aid-pip337>3.0.co;2-dopenalex-extracted
Surface passivation of crystalline silicon solar cells: a review
inferredcites →https://doi.org/10.1002/9780470744383openalex-extracted
Properties of Semiconductor Alloys
inferredcites →https://doi.org/10.1002/aenm.201100666openalex-extracted
GaAs Passivation with Trioctylphosphine Sulfide for Enhanced Solar Cell Efficiency and Durability
inferredcites →https://doi.org/10.1002/aenm.202000641openalex-extracted
Indoor Thin‐Film Photovoltaics: Progress and Challenges
inferredcites →https://doi.org/10.1002/pip.2412openalex-extracted
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inferredcites →https://doi.org/10.1002/pip.2501openalex-extracted
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inferredcites →https://doi.org/10.1002/pip.3421openalex-extracted
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inferredcites →https://doi.org/10.1007/s10853-010-5113-0openalex-extracted
Review of the anatase to rutile phase transformation
inferredcites →https://doi.org/10.1016/0167-9317(93)90100-jopenalex-extracted
Comparison of the sidewall recombination in dry and wet etched InGaAs/InP wires
inferredcites →https://doi.org/10.1016/j.actamat.2015.02.026openalex-extracted
Identification and thermodynamic mechanism of the phase transition in hafnium nitride films
inferredcites →https://doi.org/10.1016/j.apsusc.2015.02.119openalex-extracted
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inferredcites →https://doi.org/10.1016/j.apsusc.2016.01.123openalex-extracted
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inferredcites →https://doi.org/10.1016/j.apsusc.2019.144188openalex-extracted
A correlation study of layer growth rate, thickness uniformity, stoichiometry, and hydrogen impurity level in HfO2 thin films grown by ALD between 100°C and 350°C
inferredcites →https://doi.org/10.1016/j.jcrysgro.2011.09.003openalex-extracted
The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
inferredcites →https://doi.org/10.1016/j.joule.2021.11.014openalex-extracted
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inferredcites →https://doi.org/10.1016/j.pcrysgrow.2016.11.001openalex-extracted
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inferredcites →https://doi.org/10.1016/j.solmat.2006.04.014openalex-extracted
Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
inferredcites →https://doi.org/10.1016/j.solmat.2009.01.023openalex-extracted
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inferredcites →https://doi.org/10.1016/j.tsf.2005.05.050openalex-extracted
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