On the public citation graph
Introducing crystalline rare‐earth oxides into Si technologies
0 signed · 135 inferred · view as graph
Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.
Is this your work? Sign in with ORCID and put your name on the
claims that are yours.
Reference health. See whether every reference in this work resolves to a
known work and none has been retracted — and get a dated CiteStamped
badge you can embed.
What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/pssa.200673232openalex-snapshot
Synthesis of localized 2D‐layers of silicon nanoparticles embedded in a SiO2 layer by a stencil‐masked ultra‐low energy ion implantation process
inferredcites →https://doi.org/10.1007/11499893_18openalex-snapshot
Electronic Structure and Band Offsetsof Lanthanide Oxides
inferredcites →https://doi.org/10.1007/11499893_7openalex-snapshot
Molecular Beam Epitaxy of Rare-Earth Oxides
inferredcites →https://doi.org/10.1016/j.mee.2007.04.092openalex-snapshot
Integration of functional epitaxial oxides into silicon: from high-k application to nanostructures
inferredcites →https://doi.org/10.1016/j.microrel.2004.11.037openalex-snapshot
Dielectric properties of two phases of crystalline lutetium oxide
inferredcites →https://doi.org/10.1016/j.microrel.2007.01.018openalex-snapshot
Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology
inferredcites →https://doi.org/10.1016/j.mseb.2003.10.086openalex-snapshot
Pr2O3/Si(0 0 1) interface reactions and stability
inferredcites →https://doi.org/10.1016/j.mser.2003.12.002openalex-snapshot
Synthesis and properties of epitaxial electronic oxide thin-film materials
inferredcites →https://doi.org/10.1016/j.mser.2006.04.001openalex-snapshot
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
inferredcites →https://doi.org/10.1016/j.sse.2007.02.008openalex-snapshot
Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes
inferredcites →https://doi.org/10.1016/j.susc.2004.12.016openalex-snapshot
Density functional theory studies of the structure and electronic structure of pure and defective low index surfaces of ceria
inferredcites →https://doi.org/10.1016/s0040-6090(98)00533-1openalex-snapshot
Silicon MIS structures using samarium oxide films
inferredcites →https://doi.org/10.1016/s0168-1273(97)24004-3openalex-snapshot
Chapter 159 Surface magnetism of the lanthanides
inferredcites →https://doi.org/10.1038/nmat1197openalex-snapshot
The origin of highly efficient selective emission in rare-earth oxides for thermophotovoltaic applications
inferredcites →https://doi.org/10.1063/1.1352688openalex-snapshot
Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si
inferredcites →https://doi.org/10.1063/1.1361065openalex-snapshot
High-κ gate dielectrics: Current status and materials properties considerations
inferredcites →https://doi.org/10.1063/1.1385803openalex-snapshot
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
inferredcites →https://doi.org/10.1063/1.1413239openalex-snapshot
Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon
inferredcites →https://doi.org/10.1063/1.1471943openalex-snapshot
Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)
inferredcites →https://doi.org/10.1063/1.1828600openalex-snapshot
Energy-band diagram of metal/Lu2O3/silicon structures
inferredcites →https://doi.org/10.1063/1.1853522openalex-snapshot
Ca F 2 ∕ Si ∕ Ca F 2 resonant tunneling diodes grown by B surfactant-mediated epitaxy
inferredcites →https://doi.org/10.1063/1.2181282openalex-snapshot
Electronic properties of the Zr–ZrO2–SiO2–Si(100) gate stack structure
inferredcites →https://doi.org/10.1063/1.2188051openalex-snapshot
Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon
inferredcites →https://doi.org/10.1063/1.2192979openalex-snapshot
Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures
inferredcites →https://doi.org/10.1063/1.2194227openalex-snapshot
Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)
inferredcites →https://doi.org/10.1063/1.2198518openalex-snapshot
Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1nm for high-K application
inferredcites →https://doi.org/10.1063/1.2339562openalex-snapshot
Enhancing memory efficiency of Si nanocrystal floating gate memories with high-κ gate oxides
inferredcites →https://doi.org/10.1063/1.2360209openalex-snapshot
Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application
inferredcites →https://doi.org/10.1063/1.2713142openalex-snapshot
Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application
inferredcites →https://doi.org/10.1063/1.2721145openalex-snapshot
Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1nm silicon nanoparticles
inferredcites →https://doi.org/10.1063/1.2746419openalex-snapshot
Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations
inferredcites →https://doi.org/10.1063/1.2757150openalex-snapshot
Conduction band energies and hot-electron transport characteristics of epitaxial Sc2O3∕Si (111) studied by ballistic electron emission microscopy and internal photoemission
inferredcites →https://doi.org/10.1088/0034-4885/69/2/r02openalex-snapshot
High dielectric constant gate oxides for metal oxide Si transistors
inferredcites →https://doi.org/10.1109/20.908580openalex-snapshot
Spintronics: a new paradigm for electronics for the new millennium
inferredcites →https://doi.org/10.1116/1.1589516openalex-snapshot
Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide
inferredcites →https://doi.org/10.1116/1.2213266openalex-snapshot
Fabrication of single-crystalline insulator∕Si∕insulator nanostructures
inferredcites →https://doi.org/10.1143/jjap.39.l964openalex-snapshot
Epitaxial Growth and Electrical Characteristics of CaF2/Si/CaF2 Resonant Tunneling Diode Structures Grown on Si(111) 1°-off Substrate
inferredcites →https://doi.org/10.1143/jjap.44.l836openalex-snapshot
Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition
inferredcites →https://doi.org/10.1147/rd.433.0327openalex-snapshot
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
inferredcites →https://doi.org/10.1209/epl/i2002-00165-4openalex-snapshot
From classical to quantum spintronics: Theory of coherent spin injection and spin valve phenomena
inferredcites →https://doi.org/10.1557/jmr.1996.0350openalex-snapshot
Thermodynamic stability of binary oxides in contact with silicon
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4573816openalex-extracted
Highly Oriented Crystalline Si on Epitaxial Gd2o3/Si(111) Substrate Using Low-Cost Rf Sputtering for Silicon on Insulator Application
inferred← citeshttps://doi.org/10.1002/aelm.202300730openalex-snapshot
LaAlO 3 /SrTiO 3 Heterointerface: 20 Years and Beyond
inferred← citeshttps://doi.org/10.1002/lpor.71708openalex-snapshot
High-gain optical amplification and lasing from erbium-doped single-crystal films epitaxially grown on silicon
inferred← citeshttps://doi.org/10.1002/pssr.201600443openalex-snapshot
Dual‐functional crystalline BeO layer in enhancement‐mode ZnO/Si thin film transistors
inferred← citeshttps://doi.org/10.1007/978-1-4614-9320-4_2openalex-snapshot
Critical Issues in Oxide-Semiconductor Heteroepitaxy
inferred← citeshttps://doi.org/10.1007/978-3-642-10559-3_9openalex-snapshot
Nanotechnology for Computers, Memories, and Hard Disks
inferred← citeshttps://doi.org/10.1007/s10854-011-0368-zopenalex-snapshot
Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm2O3 gate on n-type silicon substrate
inferred← citeshttps://doi.org/10.1007/s11664-020-08392-4openalex-snapshot
Ion-Implanted Epitaxially Grown Gd2O3 on Silicon with Improved Electrical Properties
inferred← citeshttps://doi.org/10.1016/b978-0-08-099929-6.00007-5openalex-snapshot
Silicon–Insulator Interface Barriers
inferred← citeshttps://doi.org/10.1016/b978-0-12-387839-7.00018-xopenalex-snapshot
Epitaxial systems combining oxides and semiconductors
inferred← citeshttps://doi.org/10.1016/b978-0-12-812136-8.00018-9openalex-snapshot
Epitaxial Systems Combining Oxides and Semiconductors
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2008.10.104openalex-snapshot
Control of thick single crystal erbium oxide growth on (111) silicon
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2014.04.015openalex-snapshot
Deposition of GaN films on crystalline rare earth oxides by MOCVD
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2017.10.019openalex-snapshot
Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(1 1 1) substrates
inferred← citeshttps://doi.org/10.1016/j.mee.2009.03.107openalex-snapshot
Growth temperature dependence of epitaxial Gd2O3 films on Si(111)
inferred← citeshttps://doi.org/10.1016/j.mee.2011.03.045openalex-snapshot
Interfacial reactions of Gd- and Nb-oxide based high-k layers deposited by aqueous chemical solution deposition
inferred← citeshttps://doi.org/10.1016/j.mee.2013.03.094openalex-snapshot
Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
inferred← citeshttps://doi.org/10.1016/j.mee.2015.04.061openalex-snapshot
Single-crystal atomic layer deposited Y2O3 on GaAs(0 0 1) – growth, structural, and electrical characterization
inferred← citeshttps://doi.org/10.1016/j.mee.2017.04.048openalex-snapshot
Single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A and (001) using atomic layer deposition
inferred← citeshttps://doi.org/10.1016/j.mssp.2011.02.001openalex-snapshot
Sm2O3 gate dielectric on Si substrate
inferred← citeshttps://doi.org/10.1016/j.mssp.2026.110931openalex-snapshot
Epitaxial growth of Ge1−xSnx on Ge-buffered Gd2O3/Si(111), by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1016/j.physe.2016.02.002openalex-snapshot
Molecular beam epitaxy deposition of Gd2O3 thin films on SrTiO3 (100) substrate
inferred← citeshttps://doi.org/10.1016/j.pmatsci.2011.01.012openalex-snapshot
Integrations and challenges of novel high-k gate stacks in advanced CMOS technology
inferred← citeshttps://doi.org/10.1016/j.scitotenv.2023.163259openalex-snapshot
Cytotoxicity and hemolysis of rare earth ions and nanoscale/bulk oxides (La, Gd, and Yb): Interaction with lipid membranes and protein corona formation
inferred← citeshttps://doi.org/10.1016/j.spmi.2017.02.050openalex-snapshot
In situ study on the thermal stability and interfaces properties of Er 2 O 3 /Al 2 O 3 /Si multi stacked films by X-ray photoelectron spectroscopy
inferred← citeshttps://doi.org/10.1016/j.surfcoat.2011.12.031openalex-snapshot
Process–structure–property relations of micron thick Gd2O3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD)
inferred← citeshttps://doi.org/10.1016/j.tsf.2021.138732openalex-snapshot
Epitaxial Ge-Gd 2 O 3 on Si(111) substrate by sputtering for germanium-on-insulator applications
inferred← citeshttps://doi.org/10.1016/j.tsf.2021.139047openalex-snapshot
Radio frequency power controlled Gd2O3 crystal phase transition from monoclinic to cubic
inferred← citeshttps://doi.org/10.1016/j.tsf.2022.139561openalex-snapshot
Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates
inferred← citeshttps://doi.org/10.1016/j.tsf.2023.139907openalex-snapshot
Phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application
inferred← citeshttps://doi.org/10.1016/j.tsf.2024.140272openalex-snapshot
Highly oriented crystalline si on epitaxial Gd2O3/Si(111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application
inferred← citeshttps://doi.org/10.1016/j.tsf.2024.140529openalex-snapshot
Engineering wafer scale single-crystalline Si growth on epitaxial Gd2O3/Si(111) substrate using radio frequency sputtering for silicon on insulator application
inferred← citeshttps://doi.org/10.1016/j.tsf.2024.140559openalex-snapshot
Structural and electrical characterization of phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application
inferred← citeshttps://doi.org/10.1021/acs.cgd.6c00557openalex-snapshot
Orientation-Dependent Domain Structure and Buffer Layer Functionality of Epitaxial Bixbyite Sc2O3 Thin Films
inferred← citeshttps://doi.org/10.1021/acs.jpca.5b07209openalex-snapshot
Photofragmentation of the Gas-Phase Lanthanum Isopropylcyclopentadienyl Complex: Computational Modeling vs Experiment
inferred← citeshttps://doi.org/10.1021/acs.jpcc.5c04779openalex-snapshot
Intralayer Exciton Formation in Dielectric-Defined Type-I Heterostructures of 2D MoSe 2 Monolayers
inferred← citeshttps://doi.org/10.1021/acsami.8b09264openalex-snapshot
Selective Growth of Interface Layers from Reactions of Sc(MeCp)2(Me2pz) with Oxide Substrates
inferred← citeshttps://doi.org/10.1021/acsanm.0c03459openalex-snapshot
Three-Dimensional Integration of Functional Oxides and Crystalline Silicon for Optical Neuromorphic Computing Using Nanometer-Scale Oxygen Scavenging Barriers
inferred← citeshttps://doi.org/10.1021/cm2020862openalex-snapshot
Atomic Layer Deposition of Gd2O3 and Dy2O3: A Study of the ALD Characteristics and Structural and Electrical Properties
inferred← citeshttps://doi.org/10.1021/cr9001275openalex-snapshot
High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors
inferred← citeshttps://doi.org/10.1039/c2dt31219kopenalex-snapshot
Sc2O3, Er2O3, and Y2O3 thin films by MOCVD from volatile guanidinate class of rare-earth precursors
inferred← citeshttps://doi.org/10.1039/c3tc30401aopenalex-snapshot
Atomic layer deposition of Er2O3 thin films from Er tris-guanidinate and water: process optimization, film analysis and electrical properties
inferred← citeshttps://doi.org/10.1039/d1ra00476jopenalex-snapshot
Formation of self-assembled Gd 2 O 3 nanowire-like structures during epitaxial growth on Si(001)
inferred← citeshttps://doi.org/10.1039/d5tc01580dopenalex-snapshot
Engineering charge transfer doping of MoSe 2 monolayers via epitaxial orientation-dependent surface electron accumulation in high- κ dielectric Gd 2 O 3 thin films
inferred← citeshttps://doi.org/10.1063/1.3009206openalex-snapshot
Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin films
inferred← citeshttps://doi.org/10.1063/1.3264674openalex-snapshot
The thermal stability of Pt/epitaxial Gd2O3/Si stacks and its dependence on heat-treatment ambient
inferred← citeshttps://doi.org/10.1063/1.3318260openalex-snapshot
Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates
inferred← citeshttps://doi.org/10.1063/1.3573036openalex-snapshot
Trap-assisted conduction in Pt-gated Gd2O3/Si capacitors
inferred← citeshttps://doi.org/10.1063/1.3646104openalex-snapshot
Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties
inferred← citeshttps://doi.org/10.1063/1.3685508openalex-snapshot
Using Zintl-Klemm intermetallics in oxide-semiconductor heteroepitaxy
inferred← citeshttps://doi.org/10.1063/1.4727893openalex-snapshot
Strain-induced effects on the dielectric constant for thin, crystalline rare earth oxides on silicon
inferred← citeshttps://doi.org/10.1063/1.4768295openalex-snapshot
Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)
inferred← citeshttps://doi.org/10.1063/1.4775688openalex-snapshot
Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping
inferred← citeshttps://doi.org/10.1063/1.4804245openalex-snapshot
Investigation of band offsets and direct current leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si
inferred← citeshttps://doi.org/10.1063/1.4807588openalex-snapshot
Effective control on flat band voltage of epitaxial lanthanide oxide based metal oxide semiconductor capacitors by interfacial carbon
inferred← citeshttps://doi.org/10.1063/1.4824422openalex-snapshot
Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application
inferred← citeshttps://doi.org/10.1063/1.4861470openalex-snapshot
Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)
inferred← citeshttps://doi.org/10.1063/1.4870585openalex-snapshot
Ultrathin, epitaxial cerium dioxide on silicon
inferred← citeshttps://doi.org/10.1063/1.4905356openalex-snapshot
The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric
inferred← citeshttps://doi.org/10.1063/1.4958301openalex-snapshot
Strain-induced phase variation and dielectric constant enhancement of epitaxial Gd2O3
inferred← citeshttps://doi.org/10.1063/1.4964431openalex-snapshot
Formation and properties of high-dose nitrogen implanted epitaxially grown Gd2O3 on silicon
inferred← citeshttps://doi.org/10.1063/1.5020026openalex-snapshot
Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111)/Si (111) heterostructures
inferred← citeshttps://doi.org/10.1063/1.5054810openalex-snapshot
Epitaxial integration of high-mobility La-doped BaSnO3 thin films with silicon
inferred← citeshttps://doi.org/10.1063/5.0007793openalex-snapshot
Tuning of structural and dielectric properties of Gd2O3 grown on Si(001)
inferred← citeshttps://doi.org/10.1063/5.0010833openalex-snapshot
Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies
inferred← citeshttps://doi.org/10.1080/10420150.2022.2077204openalex-snapshot
Optical-electrical characteristics of Al/Gd2O3/(CZ-pSi)/Al diodes under gamma ray irradiation
inferred← citeshttps://doi.org/10.1088/0022-3727/43/27/275501openalex-snapshot
Natural radioactivity consideration for high-κ dielectrics and metal gates choice in nanoelectronic devices
inferred← citeshttps://doi.org/10.1088/0268-1242/24/4/045021openalex-snapshot
Crystal structure and strain state of molecular beam epitaxial grown Gd 2 O 3 on Si(1 1 1) substrates: a diffraction study
inferred← citeshttps://doi.org/10.1088/0268-1242/25/10/105001openalex-snapshot
Downscaling of defect-passivated Gd2O3thin films on p-Si(0 0 1) wafers grown by H2O-assisted atomic layer deposition
inferred← citeshttps://doi.org/10.1088/0268-1242/26/12/125005openalex-snapshot
Designer hydride routes to ‘Si–Ge’/(Gd,Er)2O3/Si(1 1 1) semiconductor-on-insulator heterostructures
inferred← citeshttps://doi.org/10.1088/1361-6463/aad176openalex-snapshot
Wafer-scale all-epitaxial GeSn-on-insulator on Si(1 1 1) by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1088/1361-6463/ac3f0dopenalex-snapshot
Improvement of crystal quality and surface morphology of Ge/Gd2O3/Si(111) epitaxial layers by cyclic annealing and regrowth
inferred← citeshttps://doi.org/10.1088/1361-6641/ac2962openalex-snapshot
Interfacial layer formation during the growth of Gd 2 O 3 on Si(001) and its thermal stability
inferred← citeshttps://doi.org/10.1103/physrevb.88.045314openalex-snapshot
Epitaxial Zintl aluminide SrAl 4 grown on a LaAlO 3 substrate
inferred← citeshttps://doi.org/10.1107/s2052520618017869openalex-snapshot
Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001)
inferred← citeshttps://doi.org/10.1109/icscs.2009.5414203openalex-snapshot
Effect of domain boundaries on dielectric properties of lanthanide oxide based gate dielectrics
inferred← citeshttps://doi.org/10.1109/radecs.2011.6131397openalex-snapshot
Alpha-Soft Error Rate due to new generations of high-κ gate oxides and metal gate electrodes in a 32 nm node
inferred← citeshttps://doi.org/10.1116/1.4793264openalex-snapshot
Effects of substrate doping on Gd2O3(100)/Si(100) heterostructure
inferred← citeshttps://doi.org/10.1116/1.4876122openalex-snapshot
Epitaxial, well-ordered ceria/lanthana high-k gate dielectrics on silicon
inferred← citeshttps://doi.org/10.1116/1.4882173openalex-snapshot
Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology
inferred← citeshttps://doi.org/10.1116/11.20080703openalex-snapshot
Gd2O3 Nanostructured Thin Films Analyzed by XPS
inferred← citeshttps://doi.org/10.1134/s1063782610050027openalex-snapshot
Optical and dielectric characteristics of the rare-earth metal oxide Lu2O3
inferred← citeshttps://doi.org/10.1364/oe.389765openalex-snapshot
Epitaxial single-crystal rare-earth oxide in horizontal slot waveguide for silicon-based integrated active photonic devices
inferred← citeshttps://doi.org/10.1364/oe.437868openalex-snapshot
Low-loss erbium-incorporated rare-earth oxide waveguides on Si with bound states in the continuum and the large optical signal enhancement in them
inferred← citeshttps://doi.org/10.15541/jim20140110openalex-snapshot
Applications of Scanning Transmission Electron Microscopy (STEM) in the New Generation of High-K Gate Dielectrics
inferred← citeshttps://doi.org/10.1557/jmr.2017.22openalex-snapshot
Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation
inferred← citeshttps://doi.org/10.2139/ssrn.4841438openalex-snapshot
Engineering Wafer Scale Single-Crystalline Si Growth on Epitaxial Gd2o3/Si(111) Substrate Using Rf Sputtering for Soi Application
inferred← citeshttps://doi.org/10.2320/matertrans.m2009147openalex-snapshot
Crystalline Nanoscale M2O3 (M=Gd, Nd) Thin Films Grown by Molecular Beam Epitaxy on Si(111)
inferred← citeshttps://doi.org/10.32657/10356/68931openalex-snapshot
Novel high-k dielectrics for nanoelectronics
inferred← citeshttps://doi.org/10.70675/7292ff65z2a17z4309zbcf7zbfecd5246cbfopenalex-snapshot
Epitaxy of crystalline oxides for functional materials integration on silicon
inferred← citeshttps://doi.org/10.7567/apex.9.081501openalex-snapshot
Low interfacial trap density and high-temperature thermal stability in atomic layer deposited single crystal Y2O3/n-GaAs(001)
Editorial review for independent work. ICSAC — the Institute for Complexity
Science and Advanced Computing — runs a structured editorial panel for researchers
publishing outside journals, and publishes on CiteStamp rails. Submission is free
and goes through ORCID: icsacinstitute.org/submit.