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Effect of an in situ hydrogen plasma pre-treatment on the reduction of GaSb native oxides prior to atomic layer deposition
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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Study of Short- and Long-Term Effectiveness of Ammonium Sulfide as Surface Passivation for InAs/GaSb Superlattices Using X-Ray Photoelectron Spectroscopy
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Interaction of atomic hydrogen with GaAs (001) surface oxide: volatile Ga-oxide formation
inferredcites →https://doi.org/10.1016/j.apsusc.2004.09.006openalex-snapshot
In-situ monitoring and analysis of GaSb(100) substrate deoxidation
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In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution
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Antimonide-based compound semiconductors for electronic devices: A review
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HREELS and photoemission study of GaSb()-(1×3) surfaces prepared by optimal atomic hydrogen cleaning
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Atomic hydrogen cleaning of polar III–V semiconductor surfaces
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The energy balance at substrate surfaces during plasma processing
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Profile Evolution for Conformal Atomic Layer Deposition over Nanotopography
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Nanometre-scale electronics with III–V compound semiconductors
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Initial etching of GaAs (001) during H2 plasma cleaning
inferredcites →https://doi.org/10.1063/1.3492847openalex-snapshot
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
inferredcites →https://doi.org/10.1063/1.358792openalex-snapshot
Kinetic study of atomic hydrogen etching of GaAs (100)
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Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning
inferredcites →https://doi.org/10.1063/1.4768693openalex-snapshot
Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
inferredcites →https://doi.org/10.1088/0963-0252/14/4/013openalex-snapshot
Atomic and molecular hydrogen densities in a plasma expansion
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Benchmarking nanotechnology for high-performance and low power logic transistor applications
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Experimental Determination of Quantum and Centroid Capacitance in Arsenide–Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect
inferredcites →https://doi.org/10.1109/ted.2011.2162732openalex-snapshot
Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET
inferredcites →https://doi.org/10.1109/tnano.2004.842073openalex-snapshot
Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
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Chemical and structural characterization of GaSb(100) surfaces treated by HCl-based solutions and annealed in vacuum
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Hydrogen and thermal deoxidations of InSb and GaSb substrates for molecular beam epitaxial growth
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Effect of pulsed deposition of Al2O3 for native oxides reduction of GaAs by atomic layer deposition technique
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Role of surface intermediates in enhanced, uniform growth rates of TiO2 atomic layer deposition thin films using titanium tetraisopropoxide and ozone
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GaSb-oxide removal and surface passivation using an electron cyclotron resonance hydrogen source
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Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures
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Effects of Wet Chemical and Trimethyl Aluminum Treatments on the Interface Properties in Atomic Layer Deposition of Al2O3 on InAs
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GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric
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