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Quantum-dot infrared photodetectors: Status and outlook

https://doi.org/10.1016/j.pquantelec.2008.07.001
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssc.200564162openalex-snapshot
Two‐color focal plane arrays based on self assembled quantum dots in a well heterostructure
inferredcites →https://doi.org/10.1007/1-84628-209-8openalex-snapshot
Mid-infrared Semiconductor Optoelectronics
inferredcites →https://doi.org/10.1007/3540101764_12openalex-snapshot
Photovoltaic and photoconductive infrared detectors
inferredcites →https://doi.org/10.1007/978-1-4613-1109-6openalex-snapshot
Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications
inferredcites →https://doi.org/10.1007/978-1-4613-1109-6_16openalex-snapshot
Non-equilibrium devices in HgCdTe
inferredcites →https://doi.org/10.1007/978-3-540-37378-0openalex-snapshot
Optical and Infrared Detectors
inferredcites →https://doi.org/10.1007/s11664-000-0229-7openalex-snapshot
Fundamental physics of infrared detector materials
inferredcites →https://doi.org/10.1007/s11664-002-0227-zopenalex-snapshot
Advances in large-area Hg1−xCdxTe photovoltaic detectors for remote-sensing applications
inferredcites →https://doi.org/10.1016/0020-0891(67)90024-3openalex-snapshot
Metallurgy and physical properties of mercury-doped germanium related to the performances of the infrared detector
inferredcites →https://doi.org/10.1016/0030-3992(78)90084-1openalex-snapshot
Optical and infra-red detectors
inferredcites →https://doi.org/10.1016/0079-6727(84)90001-6openalex-snapshot
Properties of doped silicon and Germanium infrared detectors
inferredcites →https://doi.org/10.1016/b978-1-85617-388-9.60001-2openalex-snapshot
Handbook of Infrared Detection Technologies
inferredcites →https://doi.org/10.1016/j.infrared.2004.03.016openalex-snapshot
Uncooled long wavelength infrared photon detectors
inferredcites →https://doi.org/10.1016/s0080-8784(08)62764-7openalex-snapshot
Chapter 4 Auger Recombination in Mercury Cadmium Telluride
inferredcites →https://doi.org/10.1016/s1350-4495(96)00030-8openalex-snapshot
Ultimate performance of infrared photodetectors and figure of merit of detector material
inferredcites →https://doi.org/10.1063/1.102093openalex-snapshot
Performance limitations of GaAs/AlGaAs infrared superlattices
inferredcites →https://doi.org/10.1063/1.108115openalex-snapshot
Noise gain and operating temperature of quantum well infrared photodetectors
inferredcites →https://doi.org/10.1063/1.108480openalex-snapshot
Minority carrier lifetimes in ideal InGaSb/InAs superlattices
inferredcites →https://doi.org/10.1063/1.110105openalex-snapshot
Photoconductive gain and generation-recombination noise in multiple-quantum-well infrared detectors
inferredcites →https://doi.org/10.1063/1.110199openalex-snapshot
Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
inferredcites →https://doi.org/10.1063/1.111325openalex-snapshot
Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices
inferredcites →https://doi.org/10.1063/1.112626openalex-snapshot
Theoretical performance of very long wavelength InAs/InxGa1−xSb superlattice based infrared detectors
inferredcites →https://doi.org/10.1063/1.121252openalex-snapshot
Far-infrared photoconductivity in self-organized InAs quantum dots
inferredcites →https://doi.org/10.1063/1.122094openalex-snapshot
Electronic structure of self-assembled InAs quantum dots in GaAs matrix
inferredcites →https://doi.org/10.1063/1.124715openalex-snapshot
Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
inferredcites →https://doi.org/10.1063/1.1347006openalex-snapshot
Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer
inferredcites →https://doi.org/10.1063/1.1359759openalex-snapshot
Physical model and analysis of quantum dot infrared photodetectors with blocking layer
inferredcites →https://doi.org/10.1063/1.1455130openalex-snapshot
Evaluation of the fundamental properties of quantum dot infrared detectors
inferredcites →https://doi.org/10.1063/1.1528293openalex-snapshot
Tunnel current in quantum dot infrared photodetectors
inferredcites →https://doi.org/10.1063/1.1558224openalex-snapshot
Quantum well photoconductors in infrared detector technology
inferredcites →https://doi.org/10.1063/1.1597987openalex-snapshot
Noise and photoconductive gain in InAs quantum-dot infrared photodetectors
inferredcites →https://doi.org/10.1063/1.1662426openalex-snapshot
Recombination mechanisms in 8–14-μ HgCdTe
inferredcites →https://doi.org/10.1063/1.1688982openalex-snapshot
High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.1719259openalex-snapshot
High detectivity InAs quantum dot infrared photodetectors
inferredcites →https://doi.org/10.1063/1.2188056openalex-snapshot
High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition
inferredcites →https://doi.org/10.1063/1.2719160openalex-snapshot
High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature
inferredcites →https://doi.org/10.1063/1.2766655openalex-snapshot
Temperature-dependent photoresponsivity and high-temperature (190K) operation of a quantum dot infrared photodetector
inferredcites →https://doi.org/10.1063/1.328426openalex-snapshot
Calculation of the Auger lifetime in p-type Hg1-xCdxTe
inferredcites →https://doi.org/10.1063/1.339468openalex-snapshot
Proposal for strained type II superlattice infrared detectors
inferredcites →https://doi.org/10.1063/1.343178openalex-snapshot
A diffusion model for the internal photoresponse of PtSi/p-Si Schottky barrier diodes
inferredcites →https://doi.org/10.1063/1.360422openalex-snapshot
Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes
inferredcites →https://doi.org/10.1063/1.92959openalex-snapshot
Multidimensional quantum well laser and temperature dependence of its threshold current
inferredcites →https://doi.org/10.1063/1.99918openalex-snapshot
High-detectivity D*=1.0×1010 cm √Hz/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector
inferredcites →https://doi.org/10.1088/0022-3727/38/13/009openalex-snapshot
High-performance mid-infrared quantum dot infrared photodetectors
inferredcites →https://doi.org/10.1088/0022-3727/38/13/010openalex-snapshot
Quantum dots-in-a-well infrared photodetectors
inferredcites →https://doi.org/10.1088/0034-4885/68/10/r01openalex-snapshot
HgCdTe infrared detector material: history, status and outlook
inferredcites →https://doi.org/10.1103/physrev.126.1453openalex-snapshot
Range of Excited Electrons in Metals
inferredcites →https://doi.org/10.1103/physrevb.50.14309openalex-snapshot
Carrier thermalization in sub-three-dimensional electronic systems: Fundamental limits on modulation bandwidth in semiconductor lasers
inferredcites →https://doi.org/10.1103/physrevlett.19.27openalex-snapshot
Measurement of Recombination Lifetimes in Superconductors
inferredcites →https://doi.org/10.1103/physrevlett.29.924openalex-snapshot
Photoexcitation of Quasiparticles in Nonequilibrium Superconductors
inferredcites →https://doi.org/10.1103/physrevlett.62.2164openalex-snapshot
Spectroscopy of electronic states in InSb quantum dots
inferredcites →https://doi.org/10.1103/physrevlett.64.788openalex-snapshot
Nonlocal dynamic response and level crossings in quantum-dot structures
inferredcites →https://doi.org/10.1109/2944.865096openalex-snapshot
Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors
inferredcites →https://doi.org/10.1109/3.687862openalex-snapshot
Self-assembled semiconductor structures: electronic and optoelectronic properties
inferredcites →https://doi.org/10.1109/3.766837openalex-snapshot
Self-assembled InAs-GaAs quantum-dot intersubband detectors
inferredcites →https://doi.org/10.1109/jproc.2007.900897openalex-snapshot
Quantum-Dot Optoelectronic Devices
inferredcites →https://doi.org/10.1109/jproc.2007.900967openalex-snapshot
Quantum-Dot Infrared Photodetectors
inferredcites →https://doi.org/10.1109/jproc.2007.900969openalex-snapshot
Quantum Dot Based Infrared Focal Plane Arrays
inferredcites →https://doi.org/10.1109/jqe.1986.1073149openalex-snapshot
Gain and the threshold of three-dimensional quantum-box lasers
inferredcites →https://doi.org/10.1109/jqe.2005.848901openalex-snapshot
A resonant tunneling quantum-dot infrared photodetector
inferredcites →https://doi.org/10.1109/jqe.2006.889645openalex-snapshot
640$\,\times\,$512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array
inferredcites →https://doi.org/10.1109/lpt.2004.823690openalex-snapshot
Contribution of Field-Assisted Tunneling Emission to Dark Current in InAs–GaAs Quantum Dot Infrared Photodetectors
inferredcites →https://doi.org/10.1109/lpt.2004.838295openalex-snapshot
Characteristics of a multicolor InGaAs-GaAs quantum-dot infrared photodetector
inferredcites →https://doi.org/10.1116/1.2190676openalex-snapshot
Influence of Si doping on the performance of quantum dots-in-well photodetectors
inferredcites →https://doi.org/10.1117/12.304467openalex-snapshot
Narrow-gap semiconductor photodiodes
inferredcites →https://doi.org/10.1117/12.565661openalex-snapshot
Recent developments in infrared and visible imaging for astronomy, defense, and homeland security
inferredcites →https://doi.org/10.1117/3.717228openalex-snapshot
High-Operating-Temperature Infrared Photodetectors
inferredcites →https://doi.org/10.1117/3.pm77openalex-snapshot
Narrow-Gap Semiconductor Photodiodes
inferredcites →https://doi.org/10.1147/rd.141.0061openalex-snapshot
Superlattice and Negative Differential Conductivity in Semiconductors
inferredcites →https://doi.org/10.2478/s11772-007-0024-6openalex-snapshot
Wavelength and polarization selective multi-band tunnelling quantum dot detectors
inferredcites →https://doi.org/10.5860/choice.43-0036openalex-snapshot
Encyclopedia of modern optics

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Enhanced Performance of In(Ga)As QD Based Optoelectronic Devices through Improved Interface Quality between QD and Matrix Material
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Reversible and Irreversible Degradation of CdS/ZnSe Nanocrystals Capped with Oleic Acid
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Quantum Dot Infrared Photodetectors
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Progress in Quantum Dot Infrared Photodetectors
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New Trends and Approaches in the Development of Photonic IR Detector Technology
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Quantum Wells, Superlattices, and Band-Gap Engineering
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Effects of Low Energy Light Ion (H−) Implantations on Quaternary-Alloy-Capped InAs/GaAs Quantum Dot Infrared Photodetectors
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Introduction
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Enhanced Absorptivity of Quantum Dot Infrared Photodetector by Introducing of Metal Nanostructure Layer
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Surface Plasmon-Enhanced Quantum Dot Infrared Photodetector for Detecting Human Body Emitting Infrared Rays by Using Metal Nanograting
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Photoelectric process in GaAs quantum dot
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A substrate removal processing method for III–V solar cells compatible with low-temperature characterization
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A review on the progress of ZnSe as inorganic scintillator
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Physical model for the dark current of quantum dot infrared photodetectors
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Characteristics analysis of dark current in quantum dot infrared photodetectors
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Ameliorating the optical and structural properties of InAs quantum dot heterostructures through digital alloy capping materials: Theory and experiment
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Second and third harmonic generation in “6–n” GaAs/AlGaAs quantum wells: Influence of asymmetry and external fields
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Effects of the hydrostatic pressure and temperature on optical properties of a hydrogenic impurity in the disc-shaped quantum dot
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Investigation on the polarized bound-to-continuum intersub-band transitions in the mid-infrared region for InAs quantum dots
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Simultaneous effects of hydrostatic pressure and temperature on the electronic spectrum in the presence of a single off-center donor atom in a hemi-quantum ring
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Modelling of high-temperature dark current in multi-quantum well structures from MWIR to VLWIR
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Progress in focal plane array technologies
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Binary and ternary capped In(Ga)As/GaAs self-assembled quantum dots: An annealing study
inferred← citeshttps://doi.org/10.1016/j.spmi.2019.106260openalex-snapshot
Enhancing the performance of heterogeneously coupled InAs Stranski-Krastanov on submonolayer quantum dot heterostructures
inferred← citeshttps://doi.org/10.1016/j.spmi.2021.106950openalex-snapshot
Impact of quantum dot parameters on the performance of p-type quantum dot infrared photodetectors
inferred← citeshttps://doi.org/10.1016/j.spmi.2022.107154openalex-snapshot
A qualitative analysis of the impact of P composition in GaAs1−P capped InAs/GaAs quantum dot hetero-structure
inferred← citeshttps://doi.org/10.1016/j.tsf.2014.07.010openalex-snapshot
One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers
inferred← citeshttps://doi.org/10.1021/acs.chemmater.9b02743openalex-snapshot
Aerosol-Phase Synthesis and Processing of Luminescent Silicon Nanocrystals
inferred← citeshttps://doi.org/10.1021/acs.nanolett.1c02972openalex-snapshot
Ultrafast Silicon Nanomembrane Microbolometer for Long-Wavelength Infrared Light Detection
inferred← citeshttps://doi.org/10.1021/acs.nanolett.9b04130openalex-snapshot
Mid- and Long-Wave Infrared Optoelectronics via Intraband Transitions in PbS Colloidal Quantum Dots
inferred← citeshttps://doi.org/10.1021/acsami.1c14749openalex-snapshot
Midwavelength Infrared p–n Heterojunction Diodes Based on Intraband Colloidal Quantum Dots
inferred← citeshttps://doi.org/10.1021/acsami.8b08387openalex-snapshot
Silicon/Perovskite Core–Shell Heterojunctions with Light-Trapping Effect for Sensitive Self-Driven Near-Infrared Photodetectors
inferred← citeshttps://doi.org/10.1021/acsnano.3c02617openalex-snapshot
Room Temperature Bias-Selectable, Dual-Band Infrared Detectors Based on Lead Sulfide Colloidal Quantum Dots and Black Phosphorus
inferred← citeshttps://doi.org/10.1021/acsnano.6b06172openalex-snapshot
Synergistic Effects of Plasmonics and Electron Trapping in Graphene Short-Wave Infrared Photodetectors with Ultrahigh Responsivity
inferred← citeshttps://doi.org/10.1021/acsnano.8b03425openalex-snapshot
Fast and Sensitive Colloidal Quantum Dot Mid-Wave Infrared Photodetectors
inferred← citeshttps://doi.org/10.1021/acsphotonics.1c01690openalex-snapshot
Visible to Mid-Infrared Photodetection Based on Flexible 3D Graphene/Organic Hybrid Photodetector with Ultrahigh Responsivity at Ambient Conditions
inferred← citeshttps://doi.org/10.1021/cm1018844openalex-snapshot
Extraction of Electrochemiluminescent Oxidized Carbon Quantum Dots from Activated Carbon
inferred← citeshttps://doi.org/10.1021/nl503437zopenalex-snapshot
Optically Triggered Infrared Photodetector
inferred← citeshttps://doi.org/10.1021/nn505092aopenalex-snapshot
Colloidal Quantum Dots Intraband Photodetectors
inferred← citeshttps://doi.org/10.1038/natrevmats.2016.100openalex-snapshot
Solution-processed semiconductors for next-generation photodetectors
inferred← citeshttps://doi.org/10.1038/s41563-019-0355-yopenalex-snapshot
Droplet epitaxy of semiconductor nanostructures for quantum photonic devices
inferred← citeshttps://doi.org/10.1039/c0ce00466aopenalex-snapshot
Large-scale synthesis of WOx–EDA nanobelts and their application as photoswitches
inferred← citeshttps://doi.org/10.1039/c3cs60348bopenalex-snapshot
Recent advances in solution-processed inorganic nanofilm photodetectors
inferred← citeshttps://doi.org/10.1039/c8nj04615hopenalex-snapshot
A convenient method for isolating carbon quantum dots in high yield as an alternative to the dialysis process and the fabrication of a full-band UV blocking polymer film
inferred← citeshttps://doi.org/10.1039/c9nr01096copenalex-snapshot
Enhanced-performance of self-powered flexible quantum dot photodetectors by a double hole transport layer structure
inferred← citeshttps://doi.org/10.1039/c9nr01675aopenalex-snapshot
A synergistic approach to enhance the photoelectrochemical performance of carbon dots for molecular imprinting sensors
inferred← citeshttps://doi.org/10.1039/c9tc05738bopenalex-snapshot
Recent progress of III–V quantum dot infrared photodetectors on silicon
inferred← citeshttps://doi.org/10.1039/d1ma00760bopenalex-snapshot
CdSe:In Mid-infrared transparent conductive films prospering uncooled PbSe/CdSe heterojunction photovoltaic detectors
inferred← citeshttps://doi.org/10.1039/d2tc00219aopenalex-snapshot
Advances in colloidal quantum dot-based photodetectors
inferred← citeshttps://doi.org/10.1039/d3cc02203jopenalex-snapshot
Colloidal Ag 2 Se intraband quantum dots
inferred← citeshttps://doi.org/10.1039/d3cc02605aopenalex-snapshot
Colloidal semiconductor nanocrystals: from bottom-up nanoarchitectonics to energy harvesting applications
inferred← citeshttps://doi.org/10.1039/d3tc01698fopenalex-snapshot
Mid-infrared response of PbS colloidal quantum dot solids
inferred← citeshttps://doi.org/10.1039/d6tc00776gopenalex-snapshot
Broad-spectrum (UV-vis-Nir) high-performance photodetector based on perovskite/quantum dot tandem heterostructure
inferred← citeshttps://doi.org/10.1049/el.2014.3934openalex-snapshot
Increasing peak detectivity (D*) of In 0.5 Ga 0.5 As/GaAs quantum dot infrared photodetectors by up to two orders with high‐energy proton implantation
inferred← citeshttps://doi.org/10.1063/1.3556432openalex-snapshot
Multiple-photon peak generation near the ˜10 μm range in quantum dot infrared photodetectors
inferred← citeshttps://doi.org/10.1063/1.3562160openalex-snapshot
Miniband structure and photon absorption in regimented quantum dot systems
inferred← citeshttps://doi.org/10.1063/1.4759292openalex-snapshot
Time-dependent investigation of charge injection in a quantum dot containing one electron
inferred← citeshttps://doi.org/10.1063/1.4791675openalex-snapshot
More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H−)
inferred← citeshttps://doi.org/10.1063/1.4809574openalex-snapshot
Resonant cavity-enhanced quantum-dot infrared photodetectors with sub-wavelength grating mirror
inferred← citeshttps://doi.org/10.1063/1.4810859openalex-snapshot
Intraband carrier dynamics in InAs/GaAs quantum dots stimulated by bound-to-continuum excitation
inferred← citeshttps://doi.org/10.1063/1.4818610openalex-snapshot
Simulation of the electronic properties of InxGa1−xAs quantum dots and their wetting layer under the influence of indium segregation
inferred← citeshttps://doi.org/10.1063/1.4864762openalex-snapshot
Modeling of the quantum dot filling and the dark current of quantum dot infrared photodetectors
inferred← citeshttps://doi.org/10.1063/1.4893879openalex-snapshot
Spectrally resolved intraband transitions on two-step photon absorption in InGaAs/GaAs quantum dot solar cell
inferred← citeshttps://doi.org/10.1063/1.4916372openalex-snapshot
Effect of quantum dot size and size distribution on the intersublevel transitions and absorption coefficients of III-V semiconductor quantum dot
inferred← citeshttps://doi.org/10.1063/1.4949486openalex-snapshot
Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/1.4963287openalex-snapshot
Effect of self assembled quantum dots on carrier mobility, with application to modeling the dark current in quantum dot infrared photodetectors
inferred← citeshttps://doi.org/10.1063/1.4975478openalex-snapshot
High saturation intensity in InAs/GaAs quantum dot solar cells and impact on the realization of the intermediate band concept at room-temperature
inferred← citeshttps://doi.org/10.1063/1.4977427openalex-snapshot
Complementary split-ring resonator antenna coupled quantum dot infrared photodetector
inferred← citeshttps://doi.org/10.1063/1.5021646openalex-snapshot
Room temperature operation of InxGa1−xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD
inferred← citeshttps://doi.org/10.1063/1.5091742openalex-snapshot
Nonequilibrium carrier dynamics in self-assembled quantum dots
inferred← citeshttps://doi.org/10.1063/1.5097277openalex-snapshot
Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution
inferred← citeshttps://doi.org/10.1063/1.5108599openalex-snapshot
Generation of Coulomb matrix elements for the 2D quantum harmonic oscillator
inferred← citeshttps://doi.org/10.1063/1.5113528openalex-snapshot
Theoretical correlation and effect of annealing on the photoresponse of vertically strain-coupled In0.5Ga0.5As/GaAs quantum dot heterostructures
inferred← citeshttps://doi.org/10.1063/1.5125238openalex-snapshot
High-detectivity infrared photodetector based on InAs submonolayer quantum dots grown on GaAs(001) with a 2 × 4 surface reconstruction
inferred← citeshttps://doi.org/10.1063/1.5136501openalex-snapshot
Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice
inferred← citeshttps://doi.org/10.1063/5.0077658openalex-snapshot
Simulation and design of dual-band quantum dot infrared photodetector based on metal grating structure
inferred← citeshttps://doi.org/10.1063/5.0235044openalex-snapshot
Manipulating formation of different InGaAs/GaAs nanostructures via tailoring As4 flux
inferred← citeshttps://doi.org/10.1063/5.0239360openalex-snapshot
Indium-flush technique for C-band InAs/InP quantum dots
inferred← citeshttps://doi.org/10.1063/5.0304398openalex-snapshot
Monolithically integrated pixel architecture with colloidal quantum dots and thin film transistors for SWIR imaging
inferred← citeshttps://doi.org/10.1070/rcr4917openalex-snapshot
Lead chalcogenide quantum dots for photoelectric devices
inferred← citeshttps://doi.org/10.1080/10426914.2011.566661openalex-snapshot
A New High-Efficiency and Low-Damage Polishing Process of HgCdTe Wafer
inferred← citeshttps://doi.org/10.1088/0022-3727/42/9/095101openalex-snapshot
Properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum-dots-in-a-well infrared photodetectors
inferred← citeshttps://doi.org/10.1088/0022-3727/45/22/225104openalex-snapshot
The influence of different indium-composition profiles on the electronic structure of lens-shaped In x Ga 1−x As quantum dots
inferred← citeshttps://doi.org/10.1088/0953-8984/23/32/325301openalex-snapshot
Effects of applied electric and magnetic fields on a donor impurity in laterally coupled quantum dots
inferred← citeshttps://doi.org/10.1088/1361-6463/ac0702openalex-snapshot
Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors
inferred← citeshttps://doi.org/10.1088/1361-6528/aaa92eopenalex-snapshot
GaAs quantum dots in a GaP nanowire photodetector
inferred← citeshttps://doi.org/10.1088/1361-6528/ab7aa6openalex-snapshot
Droplet epitaxy quantum dot based infrared photodetectors
inferred← citeshttps://doi.org/10.1088/1361-6528/ad53d3openalex-snapshot
Site-selective core/shell deposition of tin on multi-segment nanowires for magnetic assembly and soldered interconnection
inferred← citeshttps://doi.org/10.1088/1361-6641/ab3487openalex-snapshot
Strain relaxation in InAs quantum dots through capping layer variation and its impact on the ultrafast carrier dynamics
inferred← citeshttps://doi.org/10.1088/1674-1056/aca393openalex-snapshot
Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg3Si2Te6
inferred← citeshttps://doi.org/10.1088/1742-6596/146/1/012030openalex-snapshot
Insight on quantum dot infrared photodetectors
inferred← citeshttps://doi.org/10.1088/1742-6596/245/1/012090openalex-snapshot
Absorption Coefficient in Periodic InAs/GaAs Nanostructures
inferred← citeshttps://doi.org/10.1088/2631-7990/ae0100openalex-snapshot
Scalable fabrication of mid-wavelength and long-wavelength infrared photodetectors based on narrow bandgap semiconductors: challenges and opportunities
inferred← citeshttps://doi.org/10.1103/physrevapplied.17.054028openalex-snapshot
Interdash Coupling within Dense Ensembles of Quantum Dashes: Comparison of InAs /( In , Al , Ga ) As / InP and InAs /( In , Al ) As / InP Systems
inferred← citeshttps://doi.org/10.1103/physrevapplied.2.064009openalex-snapshot
Transparent Nanoprobes in Integrated Plasmonic Circuits Based on Plasmonic Cloaking
inferred← citeshttps://doi.org/10.1103/physrevb.92.075425openalex-snapshot
Precise shape engineering of epitaxial quantum dots by growth kinetics
inferred← citeshttps://doi.org/10.1109/ams.2014.26openalex-snapshot
Inhomogeneous Broadening in Photocurrent Spectra of DWELL-IP due to Stoichiometric and Geometric Irregularity of QD Assembly
inferred← citeshttps://doi.org/10.1109/devic.2019.8783699openalex-snapshot
Boundstates Computation for Double Quantum Well Structure with Pöschl-Teller Potential for MWIR Photodetector Design
inferred← citeshttps://doi.org/10.1109/eesco.2015.7253939openalex-snapshot
Dependency of wavelength of CdSe, ZnS and GaAs quantum dots on dot radius: Quantum confinement effect
inferred← citeshttps://doi.org/10.1109/icmap.2018.8354528openalex-snapshot
Effect of InGaAs as a strain reducing layer on molecular beam epitaxy grown InAs quantum dots
inferred← citeshttps://doi.org/10.1109/icsens.2009.5398479openalex-snapshot
Multi-color infrared sensing with superlattice quantum dot structures and absorption enhancements
inferred← citeshttps://doi.org/10.1109/ictp.2017.8285932openalex-snapshot
Analysis of dark current and detectivity of quantum dot infrared photodetectors under the effect of microscale and nanoscale transport mechanisms
inferred← citeshttps://doi.org/10.1109/imoc.2013.6646578openalex-snapshot
Computer program for analysis and design of nanostructured semiconductor devices
inferred← citeshttps://doi.org/10.1109/iwce.2010.5677976openalex-snapshot
Computational study of InAs/GaAs quantum dot arrays
inferred← citeshttps://doi.org/10.1109/jlt.2018.2811388openalex-snapshot
Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
inferred← citeshttps://doi.org/10.1109/jphot.2015.2432076openalex-snapshot
Photodetection of Infrared Photodetector Based on Surrounding Barriers Formed by Charged Quantum Dots
inferred← citeshttps://doi.org/10.1109/jsen.2016.2518626openalex-snapshot
Intraband Absorption Coefficient in Organic–Inorganic Hybrid Nanocomposite—A Pathway to Room-Temperature, Mid- and Long-Wavelength Infrared Detection
inferred← citeshttps://doi.org/10.1109/jstqe.2014.2321288openalex-snapshot
Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications
inferred← citeshttps://doi.org/10.1109/jstqe.2017.2690838openalex-snapshot
Recent Progresses in Mid Infrared Nanocrystal Optoelectronics
inferred← citeshttps://doi.org/10.1109/nano.2017.8117429openalex-snapshot
Recombination dynamics in quantum-dot infrared photodetectors with spherical and lens-shaped potential
inferred← citeshttps://doi.org/10.1109/nems.2012.6196829openalex-snapshot
A SWNTs thin film solar microcell prepared by simple solution-evaporation method
inferred← citeshttps://doi.org/10.1109/sbmicro50945.2021.9585765openalex-snapshot
Influence of the InAs coverage on the performance of submonolayer-quantum-dot infrared photodetectors grown with a (2×4) surface reconstruction
inferred← citeshttps://doi.org/10.1109/tnano.2015.2425433openalex-snapshot
Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal Annealing
inferred← citeshttps://doi.org/10.1109/tnano.2015.2513318openalex-snapshot
Optimization of the Number of Stacks in the Submonolayer Quantum Dot Heterostructure for Infrared Photodetectors
inferred← citeshttps://doi.org/10.1109/tnano.2019.2958930openalex-snapshot
Vertically Coupled Hybrid InAs Sub-Monolayer on InAs Stranski–Krastanov Quantum Dot Heterostructure: Toward Next Generation Broadband IR Detection
inferred← citeshttps://doi.org/10.1109/tnano.2020.2993690openalex-snapshot
Impact of Digital Alloy Capping Layers on Bilayer InAs Quantum Dot Heterostructures
inferred← citeshttps://doi.org/10.1109/tnano.2020.3009597openalex-snapshot
Study on Inter Band and Inter Sub-Band Optical Transitions With Varying InAs/InGaAs Sub-Monolayer Quantum Dot Heterostructure Stacks Grown by Molecular Beam Epitaxy
inferred← citeshttps://doi.org/10.1109/tnano.2022.3199417openalex-snapshot
Strain Minimization of InAs QDs Heterostructures Using Dual Quaternary-Ternary/Ternary-Quaternary Capping Materials via Digital Alloy Capping Layer Approach
inferred← citeshttps://doi.org/10.1109/tnano.2023.3276210openalex-snapshot
Theoretical Study on Vertically Coupled Stranski-Krastanov (SK) on Sub Monolayer (SML) InAs Quantum Dot Heterostructures Employing Ternary and Quaternary Barrier Materials
inferred← citeshttps://doi.org/10.1109/vlsid.2018.62openalex-snapshot
Low Power Configurable Readout Integrated Circuit for Infrared Detector
inferred← citeshttps://doi.org/10.1109/vlsid.2019.00072openalex-snapshot
Large Dynamic Range Readout Integrated Circuit for Infrared Detectors
inferred← citeshttps://doi.org/10.1116/1.4801791openalex-snapshot
Evidence of long-wave-infrared excited state transition at high temperature (200 K) in 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector
inferred← citeshttps://doi.org/10.1116/1.4894461openalex-snapshot
Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors
inferred← citeshttps://doi.org/10.1117/1.jnp.9.093078openalex-snapshot
Estimate of the plasmonic enhancement for the erbium arsenide (metallic nanoparticle): indium arsenide (quantum dot) system
inferred← citeshttps://doi.org/10.1117/12.2063202openalex-snapshot
Near-field vector analysis of plasmonic structures enhancement on infrared photodetectors
inferred← citeshttps://doi.org/10.1117/12.2180908openalex-snapshot
A detail investigation on quaternary and ternary capped strain coupled quantum dots based infrared photodetectors and effect of rapid thermal annealing temperature
inferred← citeshttps://doi.org/10.1117/12.2181564openalex-snapshot
Effect of high energy proton implantation on the device characteristics of InAlGaAs-capped InGaAs/GaAs quantum dot based infrared photodetectors
inferred← citeshttps://doi.org/10.1117/12.2237551openalex-snapshot
Enhancement in device performance of hepta-layer coupled InGaAs quantum dot infrared detector by AuGe surface plasmons
inferred← citeshttps://doi.org/10.1117/12.2262362openalex-snapshot
Effects of doping on photoelectron kinetics and characteristics of quantum dot infrared photodetector
inferred← citeshttps://doi.org/10.1117/12.2305069openalex-snapshot
Improvement in NEDT characteristics of InAs/GaAs quantum dot based 320x256 focal plane array implanted with hydrogen ions
inferred← citeshttps://doi.org/10.1117/12.2305293openalex-snapshot
Modelling of dark current and noise dependence on capping thickness in quantum dots based infrared photodetectors
inferred← citeshttps://doi.org/10.1117/12.2508482openalex-snapshot
Effect of vertical coupling on the performance of mid-infrared InAs-QDIP
inferred← citeshttps://doi.org/10.1117/12.2508488openalex-snapshot
Investigation of carrier-confinement and dark current minimization in In0.5Ga0.5As QDIP with the incorporation of In0.21Al0.21Ga0.58As/GaAs capping
inferred← citeshttps://doi.org/10.1117/12.2528886openalex-snapshot
Improved carrier confinement and strain profile in heterogeneously coupled SK-SML quantum dot heterostructure
inferred← citeshttps://doi.org/10.1117/12.2528996openalex-snapshot
The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots
inferred← citeshttps://doi.org/10.1117/12.2529006openalex-snapshot
The effect of growth rate variation on structural and optical properties of self assembled InAs quantum dots
inferred← citeshttps://doi.org/10.1117/12.2529887openalex-snapshot
Influence of quaternary (In0.21Al0.21Ga0.58As) capping on the performance of InAs quantum dot infrared photodetector
inferred← citeshttps://doi.org/10.1117/12.2610567openalex-snapshot
High energy proton implantation effect on the emission wavelength and strain phenomenon of strain coupled InAs/In(Ga)As submonolayer (SML) QDs and Stranski-Krastanov (SK) QDs
inferred← citeshttps://doi.org/10.1117/12.2633278openalex-snapshot
Oxygen mediated optical and electrical property modification of RF sputtered Ga2O3 thin films for photodetector application
inferred← citeshttps://doi.org/10.1117/12.2648919openalex-snapshot
Impact of linear alloy on strain coupled bilayer InAs/GaAs1-ySby quantum dot heterostructures
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