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Evaluation of the fundamental properties of quantum dot infrared detectors
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates
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Summary of HgCdTe 2D array technology in the U.K.
inferredcites →https://doi.org/10.1007/s11664-000-0229-7openalex-snapshot
Fundamental physics of infrared detector materials
inferredcites →https://doi.org/10.1016/s0169-4332(97)00490-xopenalex-snapshot
Recent advances in Ga1−xInxSb/InAs superlattice IR detector materials
inferredcites →https://doi.org/10.1016/s1079-4050(06)80005-0openalex-snapshot
Recent Developments in Quantum-Well Infrared Photodetectors
inferredcites →https://doi.org/10.1049/el:19980589openalex-snapshot
Strong normal-incidence infrared absorption andphoto-current spectrafrom highly uniform (In,Ga)As/GaAs quantum dot structures
inferredcites →https://doi.org/10.1063/1.110199openalex-snapshot
Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces
inferredcites →https://doi.org/10.1063/1.116808openalex-snapshot
Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser
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inferredcites →https://doi.org/10.1063/1.122053openalex-snapshot
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inferredcites →https://doi.org/10.1063/1.122094openalex-snapshot
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inferredcites →https://doi.org/10.1063/1.122870openalex-snapshot
Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice
inferredcites →https://doi.org/10.1063/1.124715openalex-snapshot
Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures
inferredcites →https://doi.org/10.1063/1.1337649openalex-snapshot
Quantum dot infrared photodetectors
inferredcites →https://doi.org/10.1063/1.1362179openalex-snapshot
High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range
inferredcites →https://doi.org/10.1063/1.99850openalex-snapshot
Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
inferredcites →https://doi.org/10.1063/1.99918openalex-snapshot
High-detectivity D*=1.0×1010 cm √Hz/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector
inferredcites →https://doi.org/10.1088/0268-1242/11/5/018openalex-snapshot
The theory of quantum-dot infrared phototransistors
inferredcites →https://doi.org/10.1103/physrevb.50.14309openalex-snapshot
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inferredcites →https://doi.org/10.1103/physrevb.55.15434openalex-snapshot
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InAs/Ga 1-x In x Sb infrared superlattice photodiodes for infrared detection
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State-of-the-art HgCdTe infrared devices
inferredcites →https://doi.org/10.1117/12.391745openalex-snapshot
Review of HgCdTe photodiodes for IR detection
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Performance Analysis of Quantum Dot Infrared Photodetectors
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Nanostructured Materials and Architectures for Advanced Infrared Photodetection
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Review of current progress in quantum dot infrared photodetectors
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Three‐dimensional ordering in self‐organized (In,Ga)As quantum dot multilayer structures
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Atomic-step-guided growth of high-uniformity InAs/GaAs quantum dot infrared photodetectors on 4° off-axis silicon via all-MOCVD
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Normal-incidence far-infrared detectivity of InAs/GaAs QDIPs doped in dots and barriers
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The structure transition from vertical alignment to anti-alignment of InAs/InP quantum dot multilayers
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Noise and photoconductive gain in InAs quantum-dot infrared photodetectors
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Effects of a thin AlAs layer on InAs quantum dot electronic structure
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High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition
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Background limited mid-infrared photodetection with photovoltaic HgTe colloidal quantum dots
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Optical anisotropy in type-II ZnTe/ZnSe submonolayer quantum dots
inferred← citeshttps://doi.org/10.1063/1.4977427openalex-snapshot
Complementary split-ring resonator antenna coupled quantum dot infrared photodetector
inferred← citeshttps://doi.org/10.1063/1.4986986openalex-snapshot
Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si
inferred← citeshttps://doi.org/10.1063/1.5088578openalex-snapshot
Two-dimensional infrared and terahertz detectors: Outlook and status
inferred← citeshttps://doi.org/10.1063/1.5115501openalex-snapshot
Colloidal quantum dots for infrared detection beyond silicon
inferred← citeshttps://doi.org/10.1088/0022-3727/38/13/010openalex-snapshot
Quantum dots-in-a-well infrared photodetectors
inferred← citeshttps://doi.org/10.1088/0022-3727/43/15/155101openalex-snapshot
A voltage tunable quantum dot photodetector for terahertz detection
inferred← citeshttps://doi.org/10.1088/0022-3727/48/36/363001openalex-snapshot
Quantum dot optoelectronic devices: lasers, photodetectors and solar cells
inferred← citeshttps://doi.org/10.1088/0022-3727/49/36/365101openalex-snapshot
Dual-band absorber for multispectral plasmon-enhanced infrared photodetection
inferred← citeshttps://doi.org/10.1088/0268-1242/26/12/125002openalex-snapshot
Infrared absorption and admittance spectroscopy of Ge quantum dots on a strained SiGe layer
inferred← citeshttps://doi.org/10.1088/0268-1242/30/11/115005openalex-snapshot
Investigation of the shape of submonolayer quantum dots using a polarization-dependent photocurrent
inferred← citeshttps://doi.org/10.1088/0957-4484/16/12/007openalex-snapshot
Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures
inferred← citeshttps://doi.org/10.1088/0957-4484/17/23/009openalex-snapshot
Self-organized hexagonal ordering of quantum dot arrays
inferred← citeshttps://doi.org/10.1088/0957-4484/19/50/505605openalex-snapshot
Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition
inferred← citeshttps://doi.org/10.1088/1361-6528/ab7aa6openalex-snapshot
Droplet epitaxy quantum dot based infrared photodetectors
inferred← citeshttps://doi.org/10.1088/1674-1056/25/10/107804openalex-snapshot
Polaron effect on the optical rectification in spherical quantum dots with electric field
inferred← citeshttps://doi.org/10.1088/1742-6596/146/1/012030openalex-snapshot
Insight on quantum dot infrared photodetectors
inferred← citeshttps://doi.org/10.1088/2053-1591/3/10/105032openalex-snapshot
Photoconductive gain and quantum efficiency of remotely doped Ge/Si quantum dot photodetectors
inferred← citeshttps://doi.org/10.1103/physrevb.72.085332openalex-snapshot
Quantum dot infrared photodetectors: Comparison of experiment and theory
inferred← citeshttps://doi.org/10.1103/physrevb.76.075335openalex-snapshot
Optical determination of the effective wetting layer thickness and composition in InAs∕Ga(In)As quantum dots
inferred← citeshttps://doi.org/10.1103/physrevb.76.125417openalex-snapshot
Charge-carrier states and light absorption in ordered quantum dot superlattices
inferred← citeshttps://doi.org/10.1103/physrevb.88.085308openalex-snapshot
Effect of Sb incorporation on the electronic structure of InAs quantum dots
inferred← citeshttps://doi.org/10.1103/physrevlett.100.046101openalex-snapshot
Self-Organization of InAs/InP Quantum Dot Multilayers: Pseudophase Diagram Describing the Transition from Aligned to Antialigned Structures
inferred← citeshttps://doi.org/10.1109/ams.2014.26openalex-snapshot
Inhomogeneous Broadening in Photocurrent Spectra of DWELL-IP due to Stoichiometric and Geometric Irregularity of QD Assembly
inferred← citeshttps://doi.org/10.1109/caol.2003.1250502openalex-snapshot
New laser and detector structures for mid-infrared
inferred← citeshttps://doi.org/10.1109/icimw.2002.1076094openalex-snapshot
Optimization of InGaAs quantum dots for optoelectronic applications
inferred← citeshttps://doi.org/10.1109/iconn.2006.340642openalex-snapshot
Quantum dots-in-a-well infrared photodetectors grown by MOCVD
inferred← citeshttps://doi.org/10.1109/ictp.2017.8285932openalex-snapshot
Analysis of dark current and detectivity of quantum dot infrared photodetectors under the effect of microscale and nanoscale transport mechanisms
inferred← citeshttps://doi.org/10.1109/jproc.2007.900967openalex-snapshot
Quantum-Dot Infrared Photodetectors
inferred← citeshttps://doi.org/10.1109/jproc.2007.900969openalex-snapshot
Quantum Dot Based Infrared Focal Plane Arrays
inferred← citeshttps://doi.org/10.1109/jqe.2002.808169openalex-snapshot
Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors
inferred← citeshttps://doi.org/10.1109/jqe.2010.2040245openalex-snapshot
Photocurrent Modeling and Detectivity Optimization in a Resonant-Tunneling Quantum-Dot Infrared Photodetector
inferred← citeshttps://doi.org/10.1109/jqe.2010.2043789openalex-snapshot
Resonant Tunneling Barriers in Quantum Dots-in-a-Well Infrared Photodetectors
inferred← citeshttps://doi.org/10.1109/jqe.2016.2585338openalex-snapshot
Resonant Cavity-Enhanced Multicolor Polarization Sensitive Quantum Dot Infrared Photodetector
inferred← citeshttps://doi.org/10.1109/jstqe.2006.882663openalex-snapshot
Quantum Dots and Nanowires Grown by Metal–Organic Chemical Vapor Deposition for Optoelectronic Device Applications
inferred← citeshttps://doi.org/10.1109/jstqe.2008.918246openalex-snapshot
Quantum Dots-in-a-Well Focal Plane Arrays
inferred← citeshttps://doi.org/10.1109/led.2005.853635openalex-snapshot
In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition
inferred← citeshttps://doi.org/10.1109/leos.2005.1547963openalex-snapshot
InGaAs quantum dots-in-a-well photodetectors grown by metal organic chemical vapor deposition
inferred← citeshttps://doi.org/10.1109/leos.2008.4688770openalex-snapshot
Electrically confined quantum dot intersubband optoelectronic devices
inferred← citeshttps://doi.org/10.1109/lpt.2004.823690openalex-snapshot
Contribution of Field-Assisted Tunneling Emission to Dark Current in InAs–GaAs Quantum Dot Infrared Photodetectors
inferred← citeshttps://doi.org/10.1109/lpt.2008.2009130openalex-snapshot
Long-Wavelength Quantum-Dot Infrared Photodetectors With Operating Temperature Over 200 K
inferred← citeshttps://doi.org/10.1109/lpt.2009.2017276openalex-snapshot
In(Ga)As Quantum Ring Terahertz Photodetector With Cutoff Wavelength at 175 $\mu$m
inferred← citeshttps://doi.org/10.1109/lpt.2010.2043090openalex-snapshot
Two-Color Qauntum-Dot Infrared Photodetectors With Periodic Cross Metal Hole Array Contact
inferred← citeshttps://doi.org/10.1109/nano.2005.1500683openalex-snapshot
Mid infrared quantum dots in a well infrared photodetectors
inferred← citeshttps://doi.org/10.1109/nano.2008.41openalex-snapshot
High Operating Temperature InAs Quantum Dot Infrared Photodetector via Selective Capping Techniques
inferred← citeshttps://doi.org/10.1109/tnano.2010.2096231openalex-snapshot
High Operating Temperature Quantum-Dot Infrared Photodetector Using Advanced Capping Techniques
inferred← citeshttps://doi.org/10.1109/tnano.2019.2937093openalex-snapshot
Spatial Optimization of Modulation Doping in P-I-P QDIPs: Towards Achieving Higher Operating Temperature
inferred← citeshttps://doi.org/10.1109/tnano.2023.3276210openalex-snapshot
Theoretical Study on Vertically Coupled Stranski-Krastanov (SK) on Sub Monolayer (SML) InAs Quantum Dot Heterostructures Employing Ternary and Quaternary Barrier Materials
inferred← citeshttps://doi.org/10.1116/1.1705578openalex-snapshot
Study of structural and optical properties of quantum dots-in-a-well heterostructures
inferred← citeshttps://doi.org/10.1116/1.2190676openalex-snapshot
Influence of Si doping on the performance of quantum dots-in-well photodetectors
inferred← citeshttps://doi.org/10.1116/1.3562186openalex-snapshot
Enhanced normal incidence photocurrent in quantum dot infrared photodetectors
inferred← citeshttps://doi.org/10.1117/1.3125802openalex-snapshot
Quantum-dot infrared photodetectors: a review
inferred← citeshttps://doi.org/10.1117/1.jnp.12.026006openalex-snapshot
Modeling of pyramidal shape quantum dot infrared photodetector: the effects of temperature and quantum dot size
inferred← citeshttps://doi.org/10.1117/1.jrs.8.084998openalex-snapshot
Development of quantum well, quantum dot, and type II superlattice infrared photodetectors
inferred← citeshttps://doi.org/10.1117/1.oe.62.8.083101openalex-snapshot
Physics driven deep Retinex fusion for adaptive infrared and visible image fusion
inferred← citeshttps://doi.org/10.1117/12.2085609openalex-snapshot
Study of emissivity dependence upon concentration in CdTe quantum dots
inferred← citeshttps://doi.org/10.1117/12.2234734openalex-snapshot
Colloidal quantum dots for low-cost MWIR imaging
inferred← citeshttps://doi.org/10.1117/12.2305289openalex-snapshot
Short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) for high temperature operation
inferred← citeshttps://doi.org/10.1117/12.3021486openalex-snapshot
Study on the preparation of Ag2Se colloidal quantum dots and its infrared properties
inferred← citeshttps://doi.org/10.1117/12.470505openalex-snapshot
Quantum dot infrared photodetectors
inferred← citeshttps://doi.org/10.1117/12.597139openalex-snapshot
High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD
inferred← citeshttps://doi.org/10.1117/12.625464openalex-snapshot
Current and future trends in infrared focal plane array technology
inferred← citeshttps://doi.org/10.1117/12.785200openalex-snapshot
Comparison of performance of quantum dot and other types of infrared photodetectors
inferred← citeshttps://doi.org/10.1117/12.793325openalex-snapshot
High performance of IR detectors due to controllable kinetics in quantum-dot structures
inferred← citeshttps://doi.org/10.1117/12.794233openalex-snapshot
Computational design of the intermediate-band solar cells based on the quantum dot superlattices
inferred← citeshttps://doi.org/10.1117/12.841150openalex-snapshot
Modeling of an electrically tunable quantum dot photodetector for terahertz detection
inferred← citeshttps://doi.org/10.1117/12.842239openalex-snapshot
Quantum dot photodetectors based on structures with collective potential barriers
inferred← citeshttps://doi.org/10.1117/12.861478openalex-snapshot
A tunable terahertz photodetector based on electrical confinement
inferred← citeshttps://doi.org/10.1117/12.898602openalex-snapshot
Performance analysis of quantum dots infrared photodetector
inferred← citeshttps://doi.org/10.1134/1.1626222openalex-snapshot
Ge/Si photodiodes with embedded arrays of Ge quantum dots forthe near infrared (1.3–1.5 µm) region
inferred← citeshttps://doi.org/10.1134/1.1852652openalex-snapshot
InGaAs/GaAs quantum dot heterostructures for 3–5 μm IR detectors
inferred← citeshttps://doi.org/10.1134/s0020168515020144openalex-snapshot
Carrier transport in multilayer InAs/GaAs quantum dot heterostructures grown by ion beam crystallization
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