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Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors

https://doi.org/10.1116/1.4894461
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/s00339-005-3222-4openalex-snapshot
Blueshifts of emission energy from InAs quantum dots in GaAs matrix due to narrowed interdot spacing: a token of the integrity of a nanostructure
inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.11.101openalex-snapshot
Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs
inferredcites →https://doi.org/10.1016/j.materresbull.2010.06.023openalex-snapshot
An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealing
inferredcites →https://doi.org/10.1016/j.materresbull.2011.09.013openalex-snapshot
Comparison of luminescence properties of bilayer and multilayer InAs/GaAs quantum dots
inferredcites →https://doi.org/10.1016/j.pquantelec.2008.07.001openalex-snapshot
Quantum-dot infrared photodetectors: Status and outlook
inferredcites →https://doi.org/10.1016/j.spmi.2013.10.036openalex-snapshot
Tuning in spectral response due to rapid thermal annealing on dot-in-a-well infrared photodetectors
inferredcites →https://doi.org/10.1016/s0022-0248(01)02391-0openalex-snapshot
InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effects
inferredcites →https://doi.org/10.1049/el:19960851openalex-snapshot
Prevention of gain saturation by multi-layer quantumdot lasers
inferredcites →https://doi.org/10.1063/1.1760832openalex-snapshot
Normal-incidence InAs/In0.15Ga0.85As quantum dots-in-a-well detector operating in the long-wave infrared atmospheric window (8–12 μm)
inferredcites →https://doi.org/10.1063/1.3657142openalex-snapshot
High-performance, long-wave (∼10.2 μm) InGaAs/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping
inferredcites →https://doi.org/10.1063/1.4711214openalex-snapshot
Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure
inferredcites →https://doi.org/10.1103/physrevb.54.8743openalex-snapshot
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
inferredcites →https://doi.org/10.1103/physrevb.58.9955openalex-snapshot
Electronic coupling in InAs/GaAs self-assembled stacked double-quantum-dot systems
inferredcites →https://doi.org/10.1103/physrevb.67.165303openalex-snapshot
Strain-engineered InAs/GaAs quantum dots for long-wavelength emission
inferredcites →https://doi.org/10.1103/physrevlett.60.535openalex-snapshot
Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure
inferredcites →https://doi.org/10.1103/physrevlett.76.952openalex-snapshot
Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs
inferredcites →https://doi.org/10.1109/3.958360openalex-snapshot
Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector
inferredcites →https://doi.org/10.1109/ted.2011.2140374openalex-snapshot
Comparison of Quantum Dots-in-a-Double-Well and Quantum Dots-in-a-Well Focal Plane Arrays in the Long-Wave Infrared
inferredcites →https://doi.org/10.1116/1.3319324openalex-snapshot
Investigation of multistack InAs/InGaAs/GaAs self-assembled quantum dots-in-double-well structures for infrared detectors
inferredcites →https://doi.org/10.1166/jnn.2011.3529openalex-snapshot
Thermal Stability of the Peak Emission Wavelength in Multilayer InAs/GaAs QDs Capped with a Combination Capping of InAlGaAs and GaAs

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4122875openalex-extracted
The Depth Investigation on the Formation of Strain Reduced In0.54al0.34ga0.12as Layer of Vertically Coupled Qds Arrays for O-Band Telecom Lasers
inferred← citeshttps://doi.org/10.1002/9783527699773.ch6openalex-snapshot
CAFM Studies on Individual GeSi Quantum Dots and Quantum Rings
inferred← citeshttps://doi.org/10.1002/pssa.202300659openalex-snapshot
Size Control and Photoluminescence Characteristics of InSb Quantum Dots on GaSb Substrates Grown by Molecular Beam Epitaxy
inferred← citeshttps://doi.org/10.1016/j.jallcom.2023.170617openalex-snapshot
Formation of strain reduced In0.54Al0.34Ga0.12As layer of vertically coupled QDs arrays for O-band telecom single photon sources
inferred← citeshttps://doi.org/10.1016/j.jlumin.2017.07.035openalex-snapshot
Evidence of quantum dot size uniformity in strain-coupled multilayered In(Ga)As/GaAs QDs grown with constant overgrowth percentage
inferred← citeshttps://doi.org/10.1016/j.spmi.2021.106977openalex-snapshot
Realization of high-quality RF sputtered ZnMgO (x=15%) thin films by post-growth annealing treatment
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00054openalex-snapshot
In-Situ Tailoring of Vertically Coupled InAs p-i-p Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing
inferred← citeshttps://doi.org/10.1021/acsanm.8b01170openalex-snapshot
Impact of an InxGa1–xAs Capping Layer in Impeding Indium Desorption from Vertically Coupled InAs/GaAs Quantum Dot Interfaces
inferred← citeshttps://doi.org/10.1117/12.2211649openalex-snapshot
Growth strategy to achieve mono-modal quantum dot size distribution in InAs/GaAs multi stack coupled heterostructures
inferred← citeshttps://doi.org/10.1117/12.2238605openalex-snapshot
Growth technique and effect of post growth annealing on the optical properties of In(Ga)As/GaAs quantum dot heterostructures
inferred← citeshttps://doi.org/10.1117/12.2305293openalex-snapshot
Modelling of dark current and noise dependence on capping thickness in quantum dots based infrared photodetectors
inferred← citeshttps://doi.org/10.1117/12.2528996openalex-snapshot
The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots
inferred← citeshttps://doi.org/10.1149/1945-7111/ad7983openalex-snapshot
Optimization of Post-Annealing Temperature of RF Magnetron-Sputtered ZnO Thin Films for Enhancing Performances of UV Photodetectors
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