On the public citation graph

Growth and Optical Properties of Direct Band Gap Ge/Ge 0.87 Sn 0.13 Core/Shell Nanowire Arrays

https://doi.org/10.1021/acs.nanolett.6b04627
0 signed · 132 inferred · view as graph

Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.

Is this your work? Sign in with ORCID and put your name on the claims that are yours.
Claim with ORCID
Reference health. See whether every reference in this work resolves to a known work and none has been retracted — and get a dated CiteStamped badge you can embed.
See reference health

What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/978-3-030-51569-0openalex-snapshot
The Physics of Semiconductors
inferredcites →https://doi.org/10.1007/bf02868550openalex-snapshot
The Ge−Sn (Germanium−Tin) system
inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.02.037openalex-snapshot
Equilibrium strain-energy analysis of coherently strained core–shell nanowires
inferredcites →https://doi.org/10.1016/j.pcrysgrow.2015.11.001openalex-snapshot
Si–Ge–Sn alloys: From growth to applications
inferredcites →https://doi.org/10.1016/j.tsf.2008.08.068openalex-snapshot
Tensile strained Ge layers on strain-relaxed Ge1−Sn /virtual Ge substrates
inferredcites →https://doi.org/10.1016/j.ultramic.2013.02.009openalex-snapshot
Atomic insight into Ge1−xSnx using atom probe tomography
inferredcites →https://doi.org/10.1021/acs.chemmater.5b01327openalex-snapshot
Direct Bandgap Group IV Epitaxy on Si for Laser Applications
inferredcites →https://doi.org/10.1021/acs.nanolett.5b03484openalex-snapshot
Exploring Crystal Phase Switching in GaP Nanowires
inferredcites →https://doi.org/10.1021/acs.nanolett.6b03109openalex-snapshot
Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity
inferredcites →https://doi.org/10.1021/acs.nanolett.6b03316openalex-snapshot
Core-Shell Germanium/Germanium–Tin Nanowires Exhibiting Room-Temperature Direct- and Indirect-Gap Photoluminescence
inferredcites →https://doi.org/10.1021/acsphotonics.5b00372openalex-snapshot
Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys
inferredcites →https://doi.org/10.1021/cm403801bopenalex-snapshot
Development of Light Emitting Group IV Ternary Alloys on Si Platforms for Long Wavelength Optoelectronic Applications
inferredcites →https://doi.org/10.1021/nl3046816openalex-snapshot
Spontaneous Alloy Composition Ordering in GaAs-AlGaAs Core–Shell Nanowires
inferredcites →https://doi.org/10.1021/nl401680kopenalex-snapshot
Polarity-Driven 3-Fold Symmetry of GaAs/AlGaAs Core Multishell Nanowires
inferredcites →https://doi.org/10.1021/nl504813eopenalex-snapshot
Cracking the Si Shell Growth in Hexagonal GaP-Si Core–Shell Nanowires
inferredcites →https://doi.org/10.1021/nn103596nopenalex-snapshot
Strong Geometrical Dependence of the Absorption of Light in Arrays of Semiconductor Nanowires
inferredcites →https://doi.org/10.1038/ncomms11405openalex-snapshot
Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
inferredcites →https://doi.org/10.1038/ncomms1746openalex-snapshot
Bright single-photon sources in bottom-up tailored nanowires
inferredcites →https://doi.org/10.1038/nnano.2015.23openalex-snapshot
Plateau–Rayleigh crystal growth of periodic shells on one-dimensional substrates
inferredcites →https://doi.org/10.1038/nphoton.2010.189openalex-snapshot
Integrating silicon photonics
inferredcites →https://doi.org/10.1038/nphoton.2013.67openalex-snapshot
Analysis of enhanced light emission from highly strained germanium microbridges
inferredcites →https://doi.org/10.1038/nphoton.2014.321openalex-snapshot
Lasing in direct-bandgap GeSn alloy grown on Si
inferredcites →https://doi.org/10.1063/1.1753975openalex-snapshot
VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH
inferredcites →https://doi.org/10.1063/1.3207838openalex-snapshot
Strain in semiconductor core-shell nanowires
inferredcites →https://doi.org/10.1063/1.371242openalex-snapshot
Temperature quenching of photoluminescence intensities in undoped and doped GaN
inferredcites →https://doi.org/10.1063/1.4757414openalex-snapshot
The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications
inferredcites →https://doi.org/10.1063/1.4889926openalex-snapshot
Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloys
inferredcites →https://doi.org/10.1063/1.4926473openalex-snapshot
On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge(1−x)Sn(x) unraveled with atom probe tomography
inferredcites →https://doi.org/10.1063/1.4953784openalex-snapshot
Compositional dependence of the band-gap of Ge1−x−ySixSny alloys
inferredcites →https://doi.org/10.1063/1.4959147openalex-snapshot
Optical study of the band structure of wurtzite GaP nanowires
inferredcites →https://doi.org/10.1063/1.4962381openalex-snapshot
The two gap transitions in Ge1−xSnx: Effect of non-substitutional complex defects
inferredcites →https://doi.org/10.1088/0957-4484/22/19/195601openalex-snapshot
In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires
inferredcites →https://doi.org/10.1103/physrevapplied.1.044005openalex-snapshot
Ge Crystals on Si Show Their Light
inferredcites →https://doi.org/10.1103/physrevb.30.1979openalex-snapshot
Temperature dependence of the dielectric function of germanium
inferredcites →https://doi.org/10.1103/physrevb.30.813openalex-snapshot
Alloy broadening in photoluminescence spectra of AlxGa1−xAs
inferredcites →https://doi.org/10.1103/physrevb.40.5683openalex-snapshot
Near-band-gap photoluminescence of Si-Ge alloys
inferredcites →https://doi.org/10.1103/physrevlett.79.1937openalex-snapshot
Interband Transitions in Sn x Ge 1 − x Alloys
inferredcites →https://doi.org/10.1117/12.777776openalex-snapshot
Overview of SWIR detectors, cameras, and applications
inferredcites →https://doi.org/10.1146/annurev.matsci.37.052506.084200openalex-snapshot
Three-Dimensional Atom-Probe Tomography: Advances and Applications
inferredcites →https://doi.org/10.1149/2.011304jssopenalex-snapshot
Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn
inferredcites →https://doi.org/10.1186/s40580-015-0044-8openalex-snapshot
Revising morphology of 〈111〉-oriented silicon and germanium nanowires
inferredcites →https://doi.org/10.1364/opn.27.1.000032openalex-snapshot
Group IV Photonics: Driving Integrated Optoelectronics
inferredcites →https://doi.org/10.5772/3463openalex-snapshot
Optoelectronics - Advanced Materials and Devices

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4097333openalex-extracted
inferred← citeshttps://doi.org/10.1002/adom.201801522openalex-snapshot
Single‐Crystal ZnO/AlN Core/Shell Nanowires for Ultraviolet Emission and Dual‐Color Ultraviolet Photodetection
inferred← citeshttps://doi.org/10.1002/adom.202400096openalex-snapshot
Mid‐Infrared Top‐Gated Ge0.82Sn0.18 Nanowire Phototransistors
inferred← citeshttps://doi.org/10.1002/inf2.12054openalex-snapshot
3D electronic and photonic structures as active biological interfaces
inferred← citeshttps://doi.org/10.1002/pssa.201700743openalex-snapshot
Growth of Ge1−xSnx Nanowires by Chemical Vapor Deposition via Vapor–Liquid–Solid Mechanism Using GeH4 and SnCl4
inferred← citeshttps://doi.org/10.1002/pssb.202100590openalex-snapshot
Free‐Energy Parameterization and Thermodynamics in Si–Ge–Sn Alloys
inferred← citeshttps://doi.org/10.1002/pssr.202100554openalex-snapshot
Rational Control of GeSn Nanowires
inferred← citeshttps://doi.org/10.1007/978-981-15-9050-4_3openalex-snapshot
Impurity Doping in Semiconductor Nanowires
inferred← citeshttps://doi.org/10.1007/s00339-023-06483-7openalex-snapshot
Progress in group-IV semiconductor nanowires based photonic devices
inferred← citeshttps://doi.org/10.1016/bs.semsem.2018.02.003openalex-snapshot
Group IV Nanowires for Carbon-Free Energy Conversion
inferred← citeshttps://doi.org/10.1016/j.apsusc.2018.08.207openalex-snapshot
Analysis of Raman scattering from inclined GeSn/Ge dual-nanowire heterostructure on Ge(1 1 1) substrate
inferred← citeshttps://doi.org/10.1016/j.apsusc.2020.146056openalex-snapshot
Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study
inferred← citeshttps://doi.org/10.1016/j.apsusc.2021.152249openalex-snapshot
Controllable synthesis of Si-based GeSn quantum dots with room-temperature photoluminescence
inferred← citeshttps://doi.org/10.1016/j.apsusc.2022.153421openalex-snapshot
Tuning the structural and optical properties of GeSiSn/Si multiple quantum wells and GeSn nanostructures using annealing and a faceted surface as a substrate
inferred← citeshttps://doi.org/10.1016/j.apsusc.2022.154443openalex-snapshot
Sn-guided self-grown Ge stripes banded by GeSn Nanowires: Formation mechanism and electric-field-induced switching from p- to n-type conduction
inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.161153openalex-snapshot
Optimization of GeSn nanostructures via tuning of femtosecond laser parameters
inferred← citeshttps://doi.org/10.1016/j.commatsci.2025.114059openalex-snapshot
Band gap transition characteristics for emission on (GeSn)n/Si superlattice
inferred← citeshttps://doi.org/10.1016/j.cossms.2018.09.002openalex-snapshot
Atom probe tomography of nanoscale architectures in functional materials for electronic and photonic applications
inferred← citeshttps://doi.org/10.1016/j.jallcom.2020.157763openalex-snapshot
Evolution of phases and their thermal stability in Ge–Sn nanofilms: a comprehensive in situ TEM investigation
inferred← citeshttps://doi.org/10.1016/j.jallcom.2023.169287openalex-snapshot
Dramatic increase in SWIR detection for GeSn strip detector with graphene hybrid structure
inferred← citeshttps://doi.org/10.1016/j.jcat.2018.11.037openalex-snapshot
A facile synthesis of Ag@PdAg core-shell architecture for efficient purification of ethene feedstock
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2017.10.030openalex-snapshot
GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2019.04.021openalex-snapshot
Elastically stressed pseudomorphic SiSn island array formation with a pedestal on the Si(1 0 0) substrate using Sn as a growth catalyst
inferred← citeshttps://doi.org/10.1016/j.mattod.2020.05.019openalex-snapshot
Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission
inferred← citeshttps://doi.org/10.1016/j.mtnano.2019.01.001openalex-snapshot
Coupling of coherent misfit strain and composition distributions in core–shell Ge/Ge1-xSnx nanowire light emitters
inferred← citeshttps://doi.org/10.1016/j.mtnano.2019.100058openalex-snapshot
Semiconductor nanowires: to grow or not to grow?
inferred← citeshttps://doi.org/10.1016/j.physb.2019.411809openalex-snapshot
Optoelectronic properties of MoS2-ReS2 and ReS2-MoS2 heterostructures
inferred← citeshttps://doi.org/10.1017/s1431927619011462openalex-snapshot
Strain and Sn distribution in Ge/Ge1−xSnx Core-Shell Nanowires
inferred← citeshttps://doi.org/10.1017/s1431927622009321openalex-snapshot
Structural and Chemical Characterization of Ge/GeSn Core/Shell Nanowires
inferred← citeshttps://doi.org/10.1021/acs.chemmater.7b03969openalex-snapshot
Pushing the Composition Limit of Anisotropic Ge1–xSnx Nanostructures and Determination of Their Thermal Stability
inferred← citeshttps://doi.org/10.1021/acs.chemmater.8b04153openalex-snapshot
Facile Synthesis of Uniform Sn1–xGex Alloy Nanocrystals with Tunable Bandgap
inferred← citeshttps://doi.org/10.1021/acs.chemmater.9b04136openalex-snapshot
Progress on Germanium–Tin Nanoscale Alloys
inferred← citeshttps://doi.org/10.1021/acs.chemmater.9b04471openalex-snapshot
Metastable Group IV Allotropes and Solid Solutions: Nanoparticles and Nanowires
inferred← citeshttps://doi.org/10.1021/acs.chemrev.3c00656openalex-snapshot
Electronic Transport and Quantum Phenomena in Nanowires
inferred← citeshttps://doi.org/10.1021/acs.chemrev.8b00649openalex-snapshot
Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions
inferred← citeshttps://doi.org/10.1021/acs.jpcc.5c03887openalex-snapshot
As-Flux-Induced Diameter Control in GaAs Nanowires
inferred← citeshttps://doi.org/10.1021/acs.nanolett.0c01039openalex-snapshot
Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector
inferred← citeshttps://doi.org/10.1021/acs.nanolett.4c00759openalex-snapshot
Mid-infrared Imaging Using Strain-Relaxed Ge 1– x Sn x Alloys Grown on 20 nm Ge Nanowires
inferred← citeshttps://doi.org/10.1021/acs.nanolett.7b02832openalex-snapshot
Tailoring Strain and Morphology of Core–Shell SiGe Nanowires by Low-Temperature Ge Condensation
inferred← citeshttps://doi.org/10.1021/acs.nanolett.9b02395openalex-snapshot
Au–Sn Catalyzed Growth of Ge 1– x Sn x Nanowires: Growth Direction, Crystallinity, and Sn Incorporation
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00036openalex-snapshot
Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge1-xSnx (x = 0.03–0.09) Nanowire Devices
inferred← citeshttps://doi.org/10.1021/acsami.0c18483openalex-snapshot
Short-Range Order in GeSn Alloy
inferred← citeshttps://doi.org/10.1021/acsanm.0c02569openalex-snapshot
Stretching the Equilibrium Limit of Sn in Ge1–xSnx Nanowires: Implications for Field Effect Transistors
inferred← citeshttps://doi.org/10.1021/acsnano.9b02843openalex-snapshot
Epitaxial Ge 0.81 Sn 0.19 Nanowires for Nanoscale Mid-Infrared Emitters
inferred← citeshttps://doi.org/10.1021/acsnano.9b09929openalex-snapshot
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires
inferred← citeshttps://doi.org/10.1021/acsphotonics.1c01728openalex-snapshot
Extended-SWIR Photodetection in All-Group IV Core/Shell Nanowires
inferred← citeshttps://doi.org/10.1021/acsphotonics.6c00376openalex-snapshot
Tunable SWIR Absorption Peaks in GeSn Nanowire Array Photodetectors
inferred← citeshttps://doi.org/10.1038/s41467-023-40140-0openalex-snapshot
Short-wave infrared cavity resonances in a single GeSn nanowire
inferred← citeshttps://doi.org/10.1038/s41586-020-2150-yopenalex-snapshot
Direct-bandgap emission from hexagonal Ge and SiGe alloys
inferred← citeshttps://doi.org/10.1039/c7nr09568fopenalex-snapshot
Critical strain for Sn incorporation into spontaneously graded Ge/GeSn core/shell nanowires
inferred← citeshttps://doi.org/10.1039/c8nr05296dopenalex-snapshot
Electrical characterization and examination of temperature-induced degradation of metastable Ge 0.81 Sn 0.19 nanowires
inferred← citeshttps://doi.org/10.1039/c8tc02423eopenalex-snapshot
Influence of growth kinetics on Sn incorporation in direct band gap Ge 1−x Sn x nanowires
inferred← citeshttps://doi.org/10.1039/c9nr02740hopenalex-snapshot
Investigating the mechanical properties of GeSn nanowires
inferred← citeshttps://doi.org/10.1039/c9nr07587aopenalex-snapshot
Phase-field investigation of the stages in radial growth of core–shell Ge/Ge 1−x Sn x nanowires
inferred← citeshttps://doi.org/10.1039/c9tc00134dopenalex-snapshot
Vertically aligned ZnO/Ga 2 O 3 core/shell nanowire arrays as self-driven superior sensitivity solar-blind photodetectors
inferred← citeshttps://doi.org/10.1039/d4nh00385copenalex-snapshot
Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices
inferred← citeshttps://doi.org/10.1063/1.5021393openalex-snapshot
Extreme IR absorption in group IV-SiGeSn core-shell nanowires
inferred← citeshttps://doi.org/10.1063/1.5034573openalex-snapshot
Electrical properties of extended defects in strain relaxed GeSn
inferred← citeshttps://doi.org/10.1063/1.5038644openalex-snapshot
Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission
inferred← citeshttps://doi.org/10.1063/1.5050273openalex-snapshot
Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation
inferred← citeshttps://doi.org/10.1063/1.5111872openalex-snapshot
Strain engineering in Ge/GeSn core/shell nanowires
inferred← citeshttps://doi.org/10.1063/1.5134379openalex-snapshot
First principles study of stability and electronic properties of Sn/Ge core-shell nanowire
inferred← citeshttps://doi.org/10.1063/5.0043511openalex-snapshot
Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors
inferred← citeshttps://doi.org/10.1063/5.0087379openalex-snapshot
Ge–Ge0.92Sn0.08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
inferred← citeshttps://doi.org/10.1063/5.0218623openalex-snapshot
Defects in Ge and GeSn and their impact on optoelectronic properties
inferred← citeshttps://doi.org/10.1063/5.0229832openalex-snapshot
Electronic and structural properties of group IV materials and their polytypes
inferred← citeshttps://doi.org/10.1088/1361-6528/ab99f6openalex-snapshot
Impact of droplet composition on the nucleation rate and morphology of vapor-liquid-solid GeSn nanowires
inferred← citeshttps://doi.org/10.1088/1361-6528/ac5c12openalex-snapshot
Enhancing the incorporation of Sn in vapor–liquid–solid GeSn nanowires by modulation of the droplet composition
inferred← citeshttps://doi.org/10.1088/1361-6528/ad3250openalex-snapshot
Research progress of out-of-plane GeSn nanowires
inferred← citeshttps://doi.org/10.1088/1361-6641/aa8084openalex-snapshot
Growth and structural properties of step-graded, high Sn content GeSn layers on Ge
inferred← citeshttps://doi.org/10.1088/1361-6641/aaed82openalex-snapshot
Dislocation-related photoluminescence of GeSn films grown on Ge (001) substrates by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1088/2053-1591/ab4228openalex-snapshot
Influence of CTAB surfactant on the phase, morphology, light absorption and photocatalytic performance of BiOF nanomaterials
inferred← citeshttps://doi.org/10.1103/dyr8-q1g1openalex-snapshot
Composition dependence of atomic order in strain-relaxed, metastable GeSn alloys
inferred← citeshttps://doi.org/10.1103/physrevapplied.15.024031openalex-snapshot
Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge 1 − x Sn x Semiconductors
inferred← citeshttps://doi.org/10.1103/physrevmaterials.4.024601openalex-snapshot
Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells
inferred← citeshttps://doi.org/10.1103/physrevmaterials.5.104606openalex-snapshot
Short-range order in SiSn alloy enriched by second-nearest-neighbor repulsion
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3439526openalex-snapshot
Structural, Optical and Electrophysical Properties of MBE-Based Multistacked GeSiSn Quantum Dots
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3450302openalex-snapshot
Transfer-Printed Multiple GeSn Membrane Mid-Infrared Photodetectors
inferred← citeshttps://doi.org/10.1109/phosst.2017.8012655openalex-snapshot
GeSn/Ge dual-nanowire heterostructure
inferred← citeshttps://doi.org/10.1126/sciadv.adt6723openalex-snapshot
Mid-infrared group IV nanowire laser
inferred← citeshttps://doi.org/10.1186/s11671-018-2587-1openalex-snapshot
Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
inferred← citeshttps://doi.org/10.1515/nanoph-2022-0489openalex-snapshot
Scalable fabrication of self‐assembled GeSn vertical nanowires for nanophotonic applications
inferred← citeshttps://doi.org/10.3103/s8756699020050039openalex-snapshot
Molecular Beam Epitaxy of Strained Nanoheterostructures Based on Si, Ge, and Sn
inferred← citeshttps://doi.org/10.32657/10356/171485openalex-snapshot
Investigation of micro- and nano-scale germanium-tin light sources towards realizing photonic-integrated circuits
inferred← citeshttps://doi.org/10.3390/coatings13020453openalex-snapshot
Effect of Laser Pulse Width and Intensity Distribution on the Crystallographic Characteristics of GeSn Film
inferred← citeshttps://doi.org/10.3390/nano13111732openalex-snapshot
Shape and Composition Evolution in an Alloy Core–Shell Nanowire Heterostructure Induced by Adatom Diffusion
inferred← citeshttps://doi.org/10.3788/aos252136openalex-snapshot
纳米线基异维复合结构光电子器件研究进展(特邀)
inferred← citeshttps://doi.org/10.70675/5279cf5ez8747z4b81zaf9bz8998266feb62openalex-snapshot
Growth and characterization of in-plane solid-liquid-solid GeSn and SiSn nanowires
inferred← citeshttps://doi.org/10.70675/760488f8z3f3ez4d0fza2a4z436b5d45b0bfopenalex-snapshot
Elaboration et intégration de nanofils GeSn pour la réalisation de dispositifs nanoélectroniques basse consommation
Editorial review for independent work. ICSAC — the Institute for Complexity Science and Advanced Computing — runs a structured editorial panel for researchers publishing outside journals, and publishes on CiteStamp rails. Submission is free and goes through ORCID: icsacinstitute.org/submit.