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Enhanced Synaptic Characteristics under Applied Magnetic Field in V2O5/NiMnIn-Based Switching Device for Neuromorphic Computing

https://doi.org/10.1021/acsaelm.3c00387
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adfm.201800854openalex-snapshot
Synapse‐Like Organic Thin Film Memristors
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Review of Semiconductor Flash Memory Devices for Material and Process Issues
inferredcites →https://doi.org/10.1002/admt.201800589openalex-snapshot
Emerging Memory Devices for Neuromorphic Computing
inferredcites →https://doi.org/10.1002/aisy.202000206openalex-snapshot
Memory Devices for Flexible and Neuromorphic Device Applications
inferredcites →https://doi.org/10.1002/sstr.202170010openalex-snapshot
A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications
inferredcites →https://doi.org/10.1007/s00339-018-1847-3openalex-snapshot
Diverse spike-timing-dependent plasticity based on multilevel HfO x memristor for neuromorphic computing
inferredcites →https://doi.org/10.1007/s00339-023-06554-9openalex-snapshot
Fabrication and electrical surface characterization of pellets of V2O5 nanostructures for robust and portable gas sensor applications
inferredcites →https://doi.org/10.1007/s12274-020-2616-0openalex-snapshot
Nanoscale resistive switching devices for memory and computing applications
inferredcites →https://doi.org/10.1007/s40820-021-00618-2openalex-snapshot
Memristive Artificial Synapses for Neuromorphic Computing
inferredcites →https://doi.org/10.1016/j.apsusc.2022.152925openalex-snapshot
Rationally synthesized Mo2N nanopyramids for high-performance flexible supercapacitive electrodes with deep insight into the Na-ion storage mechanism
inferredcites →https://doi.org/10.1016/j.ceramint.2017.04.037openalex-snapshot
Bipolar resistive switching characteristics of silicon carbide nitride (SiCN)-based devices for nonvolatile memory applications
inferredcites →https://doi.org/10.1016/j.ceramint.2022.01.296openalex-snapshot
Relevant photovoltaic effect in N-doped CQDs/MoS2 (0D/2D) quantum dimensional heterostructure
inferredcites →https://doi.org/10.1016/j.ceramint.2022.11.122openalex-snapshot
Remotely tuned multistate resistive switching in MoS2/NiMnIn thin film heterostructure for highly flexible ReRAM application
inferredcites →https://doi.org/10.1016/j.jallcom.2020.158373openalex-snapshot
Existence of bipolar and unipolar resistive switching in CaZrO3 thin film device
inferredcites →https://doi.org/10.1016/j.jallcom.2021.160303openalex-snapshot
Magnetron-sputtered amorphous V2O5 hole injection layer for high performance quantum dot light-emitting diode
inferredcites →https://doi.org/10.1016/j.jmst.2020.10.046openalex-snapshot
Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device
inferredcites →https://doi.org/10.1016/j.jmst.2021.04.025openalex-snapshot
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
inferredcites →https://doi.org/10.1016/j.physb.2017.05.040openalex-snapshot
Effects of Gibbs free energy of interfacial metal oxide on resistive switching characteristics of solution-processed HfO x films
inferredcites →https://doi.org/10.1016/j.ssi.2016.09.001openalex-snapshot
Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices
inferredcites →https://doi.org/10.1021/acsaelm.9b00086openalex-snapshot
Ultra-low Cost, Large Area Graphene/MoS2-Based Piezotronic Memristor on Paper: A Systematic Study for Both Direct Current and Alternating Current Inputs
inferredcites →https://doi.org/10.1021/acsami.1c06618openalex-snapshot
Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing
inferredcites →https://doi.org/10.1021/acsami.1c07665openalex-snapshot
Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications
inferredcites →https://doi.org/10.1021/acsami.2c21688openalex-snapshot
Realizing Electronic Synapses by Defect Engineering in Polycrystalline Two-Dimensional MoS2 for Neuromorphic Computing
inferredcites →https://doi.org/10.1021/acsami.7b16214openalex-snapshot
Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO 2 /Al/Polyimide Structure
inferredcites →https://doi.org/10.1021/acsanm.8b02233openalex-snapshot
V2O5 Nanosheets for Flexible Memristors and Broadband Photodetectors
inferredcites →https://doi.org/10.1021/nl904092hopenalex-snapshot
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
inferredcites →https://doi.org/10.1038/s41467-022-31804-4openalex-snapshot
Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing
inferredcites →https://doi.org/10.1038/s41563-017-0001-5openalex-snapshot
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
inferredcites →https://doi.org/10.1038/s41565-020-0694-5openalex-snapshot
Alloying conducting channels for reliable neuromorphic computing
inferredcites →https://doi.org/10.1038/s41598-017-17607-4openalex-snapshot
Remote control of resistive switching in TiO2 based resistive random access memory device
inferredcites →https://doi.org/10.1039/c5ta00502gopenalex-snapshot
Hydrated vanadium pentoxide with superior sodium storage capacity
inferredcites →https://doi.org/10.1039/c6nr00476hopenalex-snapshot
Engineering incremental resistive switching in TaO x based memristors for brain-inspired computing
inferredcites →https://doi.org/10.1039/c6ra26872bopenalex-snapshot
Reproducible and reliable resistive switching behaviors of AlO X /HfO X bilayer structures with Al electrode by atomic layer deposition
inferredcites →https://doi.org/10.1039/d1cp02930dopenalex-snapshot
Resistive switching on individual V 2 O 5 nanoparticles encapsulated in fluorinated graphene films
inferredcites →https://doi.org/10.1039/d1tc04201gopenalex-snapshot
Memristor modeling: challenges in theories, simulations, and device variability
inferredcites →https://doi.org/10.1039/d2nh00031hopenalex-snapshot
Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology
inferredcites →https://doi.org/10.1063/1.4864396openalex-snapshot
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
inferredcites →https://doi.org/10.1063/1.4884771openalex-snapshot
Magnetic field controllable nonvolatile resistive switching effect in silicon device
inferredcites →https://doi.org/10.1063/1.4995411openalex-snapshot
A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure
inferredcites →https://doi.org/10.1063/1.5037139openalex-snapshot
Bipolar resistive switching behavior in MoS2 nanosheets fabricated on ferromagnetic shape memory alloy
inferredcites →https://doi.org/10.1063/1.5045723openalex-snapshot
Origin of tri-state resistive switching characteristics in SiCN thin films for high-temperature ReRAM applications
inferredcites →https://doi.org/10.1063/1.5047800openalex-snapshot
Challenges in materials and devices for resistive-switching-based neuromorphic computing
inferredcites →https://doi.org/10.1063/1.5097232openalex-snapshot
White light-modulated bipolar resistive switching characteristics of Cu/MoS2 NRs/Pt MIM structure
inferredcites →https://doi.org/10.1063/5.0048272openalex-snapshot
Tuning growth of MoS2 nanowires over NiTiCu nanostructured array for flexible supercapacitive electrodes with enhanced Li-ion storage
inferredcites →https://doi.org/10.1063/5.0096679openalex-snapshot
Multifunctionality in ferromagnetic shape memory alloy-based resistive switching memory for flexible ReRAM application
inferredcites →https://doi.org/10.1063/5.0101417openalex-snapshot
Improved gradual resistive switching range and 1000× on/off ratio in HfOx RRAM achieved with a Ge2Sb2Te5 thermal barrier
inferredcites →https://doi.org/10.1088/1361-6463/aa9c15openalex-snapshot
Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al 2 O 3 /HfO 2 /Al 2 O 3 sandwich structure
inferredcites →https://doi.org/10.1088/1361-6463/aaf784openalex-snapshot
Device and materials requirements for neuromorphic computing
inferredcites →https://doi.org/10.1088/1361-6463/ac83d0openalex-snapshot
Unravelling the magnetodielectric characteristics of strain-coupled PMN-PT/FSMA multiferroic heterojunction toward flexible MEMS applications
inferredcites →https://doi.org/10.1088/1361-6528/ac056eopenalex-snapshot
Electroforming-free nonvolatile resistive switching of redox-exfoliated MoS 2 nanoflakes loaded polystyrene thin film with synaptic functionality
inferredcites →https://doi.org/10.1088/1361-6528/ac17c4openalex-snapshot
Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure
inferredcites →https://doi.org/10.1088/1674-1056/22/3/037201openalex-snapshot
Analysis of the resistive switching behaviors of vanadium oxide thin film
inferredcites →https://doi.org/10.1109/jeds.2019.2915975openalex-snapshot
Impact of the Stacking Order of HfO x and AlO x Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics
inferredcites →https://doi.org/10.1109/led.2013.2277916openalex-snapshot
Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect
inferredcites →https://doi.org/10.1109/led.2016.2582859openalex-snapshot
Improved Synaptic Behavior Under Identical Pulses Using AlO x /HfO 2 Bilayer RRAM Array for Neuromorphic Systems
inferredcites →https://doi.org/10.1109/led.2022.3140216openalex-snapshot
Magnetic Field Tunable Ferromagnetic Shape Memory Alloy-Based SAW Resonator
inferredcites →https://doi.org/10.1134/s1063785015070287openalex-snapshot
Electroforming and bipolar resistive switching in Si-SiO2-V2O5-Au binary oxide structure
inferredcites →https://doi.org/10.18494/sam.2018.1796openalex-snapshot
Bipolar Switching Properties of Bilayer V2O5/Sm2O3 Thin-film Resistive Random Access Memory Device Prepared by Sputtering Technology
inferredcites →https://doi.org/10.3390/ma11112102openalex-snapshot
Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing
inferredcites →https://doi.org/10.3390/mi13111870openalex-snapshot
Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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inferred← citeshttps://doi.org/10.1002/adma.202417793openalex-snapshot
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Recent advancements in zero, one, two, and three-dimensional transition metal nitride-based supercapacitor electrodes
inferred← citeshttps://doi.org/10.1016/j.jpowsour.2025.238775openalex-snapshot
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V2O5 based artificial optical synaptic devices for neuromorphic computing
inferred← citeshttps://doi.org/10.1016/j.sna.2025.117359openalex-snapshot
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inferred← citeshttps://doi.org/10.1016/j.solmat.2024.112736openalex-snapshot
A review on recent advancements in the growth of MoS2 based flexible photodetectors
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Process-induced chemical reactions on interfaces of thin film ionic materials
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Memory Device Based on a Nano-Granulars and Nano-Worms Structured Mos2 Active Layer: The Origin of Resistive Switching Characteristics
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01055openalex-snapshot
Magnetoelectric Functionality of Ni–Mn–In-Encapsulated AlN/Ni–Mn–In/Ni-Graded Heterostructure for Flexible Magnetic Field Sensor
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01179openalex-snapshot
Resistive Memristor Coupled with Multilevel Perpendicular Magnetic States
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01410openalex-snapshot
Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS2/Ag/Kapton Resistive-Switching Memory Device
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Multifunctionality in Electrically Poled PMN–PT/Ni–Mn–In Multiferroic Heterostructure for Flexible Magnetic Field Sensing and Nonvolatile Memory Applications
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Applicability of the MoS2–aSiC Heterostructure for Durable Supercapacitance and NO2 Gas Sensing in a Harsh Environment
inferred← citeshttps://doi.org/10.1021/acsaelm.4c00584openalex-snapshot
Multifunctional Resistive Switching in a Magnetization-Graded Ni/NiMnIn/V 2 O 5 Flexible Heterostructure toward Brain-Inspired Neuromorphic Computing
inferred← citeshttps://doi.org/10.1021/acsaelm.4c02044openalex-snapshot
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inferred← citeshttps://doi.org/10.1021/acsaem.4c00563openalex-snapshot
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