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Multifunctionality in ferromagnetic shape memory alloy-based resistive switching memory for flexible ReRAM application
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/adma.200900375openalex-snapshot
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
inferredcites →https://doi.org/10.1002/adma.200904441openalex-snapshot
Stable Switching Characteristics of Organic Nonvolatile Memory on a Bent Flexible Substrate
inferredcites →https://doi.org/10.1002/adma.201605688openalex-snapshot
Unleashing the Full Potential of Magnetoelectric Coupling in Film Heterostructures
inferredcites →https://doi.org/10.1007/s10854-014-2487-9openalex-snapshot
Surface properties of AlN and Al x Ga1−x N epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy
inferredcites →https://doi.org/10.1016/j.jallcom.2010.11.133openalex-snapshot
Exchange bias behaviour in magnetron sputtered Ni49.8Mn36.1Sn13.9 ferromagnetic shape memory alloy thin film
inferredcites →https://doi.org/10.1016/j.jallcom.2021.163091openalex-snapshot
Magnetoelectric heterostructures for next-generation MEMS magnetic field sensing applications
inferredcites →https://doi.org/10.1016/j.matchemphys.2018.08.013openalex-snapshot
Growth assessment and scrutinize dielectric reliability of c-axis oriented insulating AlN thin films in MIM structures for microelectronics applications
inferredcites →https://doi.org/10.1016/s0304-8853(01)00244-xopenalex-snapshot
Magnetostriction in ferromagnetic shape memory alloys
inferredcites →https://doi.org/10.1021/acsaelm.9b00435openalex-snapshot
Magnetoelectric Coupling in Ni–Mn–In/PLZT Artificial Multiferroic Heterostructure and Its Application in Mid-IR Photothermal Modulation by External Magnetic Field
inferredcites →https://doi.org/10.1021/acsami.6b14566openalex-snapshot
Flexible Multistate Data Storage Devices Fabricated Using Natural Lignin at Room Temperature
inferredcites →https://doi.org/10.1021/acsami.6b15149openalex-snapshot
Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device
inferredcites →https://doi.org/10.1021/acsami.7b16214openalex-snapshot
Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO 2 /Al/Polyimide Structure
inferredcites →https://doi.org/10.1021/acsnano.6b01643openalex-snapshot
Flexible Hybrid Organic–Inorganic Perovskite Memory
inferredcites →https://doi.org/10.1021/nn4017422openalex-snapshot
Four-States Multiferroic Memory Embodied Using Mn-Doped BaTiO3 Nanorods
inferredcites →https://doi.org/10.1038/s41563-018-0275-2openalex-snapshot
Advances in magnetoelectric multiferroics
inferredcites →https://doi.org/10.1038/s41598-017-17607-4openalex-snapshot
Remote control of resistive switching in TiO2 based resistive random access memory device
inferredcites →https://doi.org/10.1038/s41598-018-35648-1openalex-snapshot
Exploring the Magnetoelectric Coupling at the Composite Interfaces of FE/FM/FE Heterostructures
inferredcites →https://doi.org/10.1038/srep17103openalex-snapshot
Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM
inferredcites →https://doi.org/10.1039/c8ce00966jopenalex-snapshot
Diverse resistive switching behaviors of AlN thin films with different orientations
inferredcites →https://doi.org/10.1063/1.3211315openalex-snapshot
Investigation of biferroic properties in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 epitaxial bilayered heterostructures
inferredcites →https://doi.org/10.1063/1.3483158openalex-snapshot
Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
inferredcites →https://doi.org/10.1063/1.4768951openalex-snapshot
Impact of the surface-near silicon substrate properties on the microstructure of sputter-deposited AlN thin films
inferredcites →https://doi.org/10.1063/1.4775677openalex-snapshot
12% magnetic field-induced strain in Ni-Mn-Ga-based non-modulated martensite
inferredcites →https://doi.org/10.1063/1.5022602openalex-snapshot
Double negative acoustic metastructure for attenuation of acoustic emissions
inferredcites →https://doi.org/10.1063/1.5039969openalex-snapshot
High magnetoelectric coupling in Si-integrated AlN/NiMnIn thin film double layers at room temperature
inferredcites →https://doi.org/10.1063/1.5142175openalex-snapshot
Effects of magnetic field on resistive switching in multiferroic based Ag/BiFeO3/FTO RRAM device
inferredcites →https://doi.org/10.1063/5.0020085openalex-snapshot
Optically triggered multilevel resistive switching characteristics of Cu/MoS2/AlN/ITO bilayer memory structure
inferredcites →https://doi.org/10.1063/5.0045378openalex-snapshot
Two-dimensional MoS2 reinforced with Cu3N nanoflakes prepared via binder less sputtering route for flexible supercapacitor electrodes
inferredcites →https://doi.org/10.1063/5.0048272openalex-snapshot
Tuning growth of MoS2 nanowires over NiTiCu nanostructured array for flexible supercapacitive electrodes with enhanced Li-ion storage
inferredcites →https://doi.org/10.1088/0022-3727/31/20/001openalex-snapshot
Growth and applications of Group III-nitrides
inferredcites →https://doi.org/10.1088/0022-3727/45/1/015301openalex-snapshot
Thermal conductivity of aluminium nitride thin films prepared by reactive magnetron sputtering
inferredcites →https://doi.org/10.1088/0268-1242/31/6/063002openalex-snapshot
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
inferredcites →https://doi.org/10.1088/0953-8984/27/50/504002openalex-snapshot
Multifunctional magnetoelectric materials for device applications
inferredcites →https://doi.org/10.1088/1361-6528/ab2084openalex-snapshot
Nanoscale resistive switching memory devices: a review
inferredcites →https://doi.org/10.1088/1361-6528/ac17c4openalex-snapshot
Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure
inferredcites →https://doi.org/10.3390/ma10050459openalex-snapshot
Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory
inferredcites →https://doi.org/10.4103/0973-1075.132627openalex-snapshot
Quality of life in cancer patients undergoing chemotherapy in a tertiary care center in Malwa region of Punjab
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.1002/aidi.202500039openalex-snapshot
Flexible Memory: Progress, Challenges, and Opportunities
inferred← citeshttps://doi.org/10.1002/smll.202307723openalex-snapshot
Pseudocapacitive Storage in Molybdenum Oxynitride Nanostructures Reactively Sputtered on Stainless‐Steel Mesh Towards an All‐Solid‐State Flexible Supercapacitor
inferred← citeshttps://doi.org/10.1016/j.ceramint.2022.11.122openalex-snapshot
Remotely tuned multistate resistive switching in MoS2/NiMnIn thin film heterostructure for highly flexible ReRAM application
inferred← citeshttps://doi.org/10.1016/j.est.2024.110866openalex-snapshot
Pseudocapacitive performance of reactively co-sputtered titanium chromium nitride nanopyramids towards flexible supercapacitor with Li-ion storage
inferred← citeshttps://doi.org/10.1016/j.est.2025.116580openalex-snapshot
Recent advancements in zero, one, two, and three-dimensional transition metal nitride-based supercapacitor electrodes
inferred← citeshttps://doi.org/10.1016/j.vacuum.2024.112989openalex-snapshot
Memory Device Based on a Nano-Granulars and Nano-Worms Structured Mos2 Active Layer: The Origin of Resistive Switching Characteristics
inferred← citeshttps://doi.org/10.1021/acsaelm.3c00387openalex-snapshot
Enhanced Synaptic Characteristics under Applied Magnetic Field in V2O5/NiMnIn-Based Switching Device for Neuromorphic Computing
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01055openalex-snapshot
Magnetoelectric Functionality of Ni–Mn–In-Encapsulated AlN/Ni–Mn–In/Ni-Graded Heterostructure for Flexible Magnetic Field Sensor
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01410openalex-snapshot
Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS2/Ag/Kapton Resistive-Switching Memory Device
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01855openalex-snapshot
Multifunctionality in Electrically Poled PMN–PT/Ni–Mn–In Multiferroic Heterostructure for Flexible Magnetic Field Sensing and Nonvolatile Memory Applications
inferred← citeshttps://doi.org/10.1021/acsami.3c12393openalex-snapshot
Directly Sputtered Molybdenum Disulfide Nanoworms Decorated with Binder-less VN and W2N Nanoarrays for Bendable Large-Scale Asymmetric Supercapacitor
inferred← citeshttps://doi.org/10.1039/d5ma00337gopenalex-snapshot
Advances in resistive switching memory: comprehensive insights into ECM mechanisms through TEM observations and analysis
inferred← citeshttps://doi.org/10.1063/5.0146126openalex-snapshot
Multilevel resistive switching in solution-processed CuFe2O4/TiO2 heterostructure
inferred← citeshttps://doi.org/10.1063/5.0146498openalex-snapshot
Flexible magnetoelectric sensor and nonvolatile memory based on magnetization-graded Ni/FSMA/PMN-PT multiferroic heterostructure
inferred← citeshttps://doi.org/10.1063/5.0170215openalex-snapshot
Functionality in frequency tuning of magnetoelectric heterostructure integrated highly flexible bulk acoustic wave resonator
inferred← citeshttps://doi.org/10.1109/jsen.2023.3314151openalex-snapshot
Fabrication of Flexible Substrate With Partially Embedded Back Contacts for Piezoelectric ZnO-Based Arms Movement Sensors
inferred← citeshttps://doi.org/10.1109/jsen.2023.3345031openalex-snapshot
Ferromagnetic Shape Memory Alloy Integrated Highly Flexible SAW Delay Line Magnetic Sensor
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