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Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films

https://doi.org/10.1021/acsami.2c11073
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Physical Mechanisms behind the Field‐Cycling Behavior of HfO 2 ‐Based Ferroelectric Capacitors
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The Inlaid Al2O3 Tunnel Switch for Ultrathin Ferroelectric Films
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Giant Negative Electrocaloric Effects of Hf0.5Zr0.5O2 Thin Films
inferredcites →https://doi.org/10.1002/admi.201701258openalex-snapshot
Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO 2
inferredcites →https://doi.org/10.1002/aelm.201600173openalex-snapshot
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO 2 Thin Films
inferredcites →https://doi.org/10.1002/aelm.201900303openalex-snapshot
On the Origin of the Large Remanent Polarization in La:HfO2
inferredcites →https://doi.org/10.1002/aenm.201400610openalex-snapshot
Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability
inferredcites →https://doi.org/10.1007/s10853-009-3664-8openalex-snapshot
Interface effects on highly epitaxial ferroelectric thin films
inferredcites →https://doi.org/10.1016/j.apsusc.2004.02.048openalex-snapshot
Effects of precursors on nucleation in atomic layer deposition of HfO2
inferredcites →https://doi.org/10.1016/j.jcrysgro.2020.125624openalex-snapshot
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
inferredcites →https://doi.org/10.1016/j.matdes.2018.10.044openalex-snapshot
Interface-based reduced coercivity and leakage currents of BiFeO3 thin films: A comparative study
inferredcites →https://doi.org/10.1016/j.vacuum.2017.06.022openalex-snapshot
Microstructural, surface and interface properties of zirconium doped HfO2 thin films grown by RF co-sputtering technique
inferredcites →https://doi.org/10.1021/acsaelm.0c00503openalex-snapshot
Enhanced Ferroelectric Polarization in TiN/HfO 2 /TiN Capacitors by Interface Design
inferredcites →https://doi.org/10.1021/acsaelm.9b00256openalex-snapshot
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
inferredcites →https://doi.org/10.1021/acsami.6b13866openalex-snapshot
Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
inferredcites →https://doi.org/10.1021/nl302049kopenalex-snapshot
Ferroelectricity in Simple Binary ZrO 2 and HfO 2
inferredcites →https://doi.org/10.1038/s41563-020-00897-xopenalex-snapshot
Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y
inferredcites →https://doi.org/10.1038/s41598-019-56816-xopenalex-snapshot
Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing
inferredcites →https://doi.org/10.1039/c6tc02003hopenalex-snapshot
Ferroelectricity in undoped-HfO 2 thin films induced by deposition temperature control during atomic layer deposition
inferredcites →https://doi.org/10.1039/c7tc01200dopenalex-snapshot
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants
inferredcites →https://doi.org/10.1039/d0nr07597copenalex-snapshot
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inferredcites →https://doi.org/10.1039/d0tc01695kopenalex-snapshot
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
inferredcites →https://doi.org/10.1039/d1qi00167aopenalex-snapshot
Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2 -based ferroelectrics
inferredcites →https://doi.org/10.1063/1.112211openalex-snapshot
Electronic domain pinning in Pb(Zr,Ti)O3 thin films and its role in fatigue
inferredcites →https://doi.org/10.1063/1.121386openalex-snapshot
Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O3 thin films capacitors with Pt electrodes
inferredcites →https://doi.org/10.1063/1.1535748openalex-snapshot
Reversible and irreversible polarization processes in ferroelectric ceramics and thin films
inferredcites →https://doi.org/10.1063/1.1644342openalex-snapshot
Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7−x capacitor
inferredcites →https://doi.org/10.1063/1.1722749openalex-snapshot
Activation Field and Coercivity of Ferroelectric Barium Titanate
inferredcites →https://doi.org/10.1063/1.2336999openalex-snapshot
Ferroelectric thin films: Review of materials, properties, and applications
inferredcites →https://doi.org/10.1063/1.3000459openalex-snapshot
The influence of 180° ferroelectric domain wall width on the threshold field for wall motion
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Identification of passive layer in ferroelectric thin films from their switching parameters
inferredcites →https://doi.org/10.1063/1.3634052openalex-snapshot
Ferroelectricity in hafnium oxide thin films
inferredcites →https://doi.org/10.1063/1.3646104openalex-snapshot
Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties
inferredcites →https://doi.org/10.1063/1.4907394openalex-snapshot
In situ measurement of increased ferroelectric/ferroelastic domain wall motion in declamped tetragonal lead zirconate titanate thin films
inferredcites →https://doi.org/10.1063/1.4916707openalex-snapshot
The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
inferredcites →https://doi.org/10.1063/1.4947490openalex-snapshot
Stabilization of metastable phases in hafnia owing to surface energy effects
inferredcites →https://doi.org/10.1063/1.5052012openalex-snapshot
Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors
inferredcites →https://doi.org/10.1063/1.5084019openalex-snapshot
Dead layer thickness estimation at the ferroelectric film-metal interface in PZT
inferredcites →https://doi.org/10.1063/1.5097980openalex-snapshot
Formation of the orthorhombic phase in CeO2-HfO2 solid solution epitaxial thin films and their ferroelectric properties
inferredcites →https://doi.org/10.1063/1.5126144openalex-snapshot
Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors
inferredcites →https://doi.org/10.1063/1.5128502openalex-snapshot
Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface
inferredcites →https://doi.org/10.1063/5.0002835openalex-snapshot
Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1−x)O2 thin films
inferredcites →https://doi.org/10.1063/5.0029532openalex-snapshot
Unexpectedly large remanent polarization of Hf0.5Zr0.5O2 metal–ferroelectric–metal capacitor fabricated without breaking vacuum
inferredcites →https://doi.org/10.1063/5.0035100openalex-snapshot
Polarization switching in thin doped HfO2 ferroelectric layers
inferredcites →https://doi.org/10.1063/5.0035686openalex-snapshot
Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films
inferredcites →https://doi.org/10.1063/5.0044702openalex-snapshot
Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf1- x Zr x O2 thin films
inferredcites →https://doi.org/10.1063/5.0047977openalex-snapshot
Domains and domain dynamics in fluorite-structured ferroelectrics
inferredcites →https://doi.org/10.1088/1361-6463/aa54e6openalex-snapshot
Temperature effect on titanium nitride nanometer thin film in air
inferredcites →https://doi.org/10.1088/1361-6463/abbc98openalex-snapshot
Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
inferredcites →https://doi.org/10.1103/physrev.17.475openalex-snapshot
Piezo-Electric and Allied Phenomena in Rochelle Salt
inferredcites →https://doi.org/10.1103/physrevb.58.8050openalex-snapshot
First-principles study of the surfaces of zirconia
inferredcites →https://doi.org/10.1103/physrevb.66.214109openalex-snapshot
Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films
inferredcites →https://doi.org/10.1109/iedm.2013.6724605openalex-snapshot
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
inferredcites →https://doi.org/10.1109/imw.2018.8388832openalex-snapshot
Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications
inferredcites →https://doi.org/10.1109/led.2012.2204856openalex-snapshot
Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors
inferredcites →https://doi.org/10.1109/led.2018.2846570openalex-snapshot
Effects of Capping Electrode on Ferroelectric Properties of Hf 0.5 Zr 0.5 O 2 Thin Films
inferredcites →https://doi.org/10.1109/led.2021.3097332openalex-snapshot
Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film
inferredcites →https://doi.org/10.1109/ted.2020.3004033openalex-snapshot
Interplay Between Switching and Retention in HfO 2 -Based Ferroelectric FETs
inferredcites →https://doi.org/10.1109/vlsitechnology18217.2020.9265063openalex-snapshot
SoC Compatible 1T1C FeRAM Memory Array Based on Ferroelectric Hf0.5Zr0.5O2
inferredcites →https://doi.org/10.1111/jace.14159openalex-snapshot
Effect of Mechanical Constraint on Domain Reorientation in Predominantly {111}‐Textured Lead Zirconate Titanate Films
inferredcites →https://doi.org/10.1116/1.4768791openalex-snapshot
Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO2, ZrO2/SiO2/ZrO2, and ZrO2/Al2O3/ZrO2 as dielectric and TiN electrodes
inferredcites →https://doi.org/10.1116/1.4842675openalex-snapshot
Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
inferredcites →https://doi.org/10.1116/6.0001317openalex-snapshot
Many routes to ferroelectric HfO2: A review of current deposition methods
inferredcites →https://doi.org/10.1126/science.aba0067openalex-snapshot
Scale-free ferroelectricity induced by flat phonon bands in HfO 2
inferredcites →https://doi.org/10.1154/1.2790965openalex-snapshot
Thermal expansion of anatase and rutile between 300 and 575 K using synchrotron powder X-ray diffraction
inferredcites →https://doi.org/10.1557/proc-493-311openalex-snapshot
Frequency Spectra of Fatigue of PZT and other Ferroelectric Thin Films
inferredcites →https://doi.org/10.3390/ma13092008openalex-snapshot
Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4692701openalex-extracted
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inferred← citeshttps://doi.org/10.2139/ssrn.4902332openalex-extracted
Effect of Oxidizing Agents on the Properties and Structure of Hf0.5zr0.5o2 Thin Films
inferred← citeshttps://doi.org/10.1002/9783527844869.ch06openalex-snapshot
1T1C HfO 2 FeRAM Materials
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Non‐vacuum Solution‐Processable Zr‐ and Ti‐functionalized Colloidal Organic/Inorganic Nanohybrid Materials Inducing Different Dielectric Properties and Low‐Voltage Driving Printed Electronics Applications
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The Imprint Failure and Suppression of the Multi‐Level Memory in HfAlO x Ferroelectric Capacitor
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Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors
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High‐Performance and Scalable Ferroelectric Diodes Enabled via 2D‐MoS 2 Buffer Layer Under Low Thermal Budget
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Rapid cooling process-driven enhancement of an orthorhombic phase in ferroelectric HfZrOx of sub-3 nm ultrathin films by atomic layer deposition
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A sacrificial HfN interlayer enables oxygen-buffered Mo electrodes for sub‑0.4nm equivalent oxide thickness of HfO2/ZrO2 nanolaminates for DRAM capacitors
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Texture in atomic layer deposited Hf0.5Zr0.5O2 ferroelectric thin films
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Intense photoluminescence across wavelengths from ultraviolet to NIR-II in Yb3+/Er3+ co-doped cubic HfO2 single crystals with ultra-high melting point excited at 980 nm
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Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications
inferred← citeshttps://doi.org/10.1016/j.fmre.2026.08.015openalex-snapshot
Effects of oxygen vacancies in HfO2-based ferroelectric memories: progress and challenges
inferred← citeshttps://doi.org/10.1016/j.jallcom.2026.190612openalex-snapshot
In-situ oxygen plasma-assisted ALD of Hf0.5Zr0.5O2 ferroelectric thin films with high endurance and imprint resistance
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Intact-film orthogonal 2D X-ray diffraction mapping for crystallographic homogeneity evaluation in perovskite solar modules
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Recombination mechanism in the thermal degradation of cyclopentadienyl tris(dimethylamino) zirconium
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Enhanced memory properties of MFIS devices through matching of capping electrode and ferroelectric HfO2 film
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Enhancement of both dielectric and ferroelectric performances in TiN/Al2O3/Hf1-xZrxO2/TiO2/TiN -based 3D capacitors
inferred← citeshttps://doi.org/10.1021/acsaelm.3c00117openalex-snapshot
Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films
inferred← citeshttps://doi.org/10.1021/acsaelm.3c00733openalex-snapshot
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inferred← citeshttps://doi.org/10.1021/acsaelm.4c00073openalex-snapshot
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inferred← citeshttps://doi.org/10.1021/acsami.4c10338openalex-snapshot
Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses
inferred← citeshttps://doi.org/10.1021/acsami.4c14281openalex-snapshot
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inferred← citeshttps://doi.org/10.1021/acsami.4c17978openalex-snapshot
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inferred← citeshttps://doi.org/10.1021/acsami.5c11569openalex-snapshot
Peak Splitting and Bias Fields in Ferroelectric Hafnia Mediated by Interface Charge Effects
inferred← citeshttps://doi.org/10.1021/acsami.5c15572openalex-snapshot
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High-precision hyperdimensional computing enabled by in-memory computing using high-polarization ferroelectric Hf0.5Zr0.5O2 capacitors
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Hidden structural phase transition assisted ferroelectric domain orientation engineering in Hf0.5Zr0.5O2 films
inferred← citeshttps://doi.org/10.1063/5.0126695openalex-snapshot
Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant
inferred← citeshttps://doi.org/10.1063/5.0129546openalex-snapshot
A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance
inferred← citeshttps://doi.org/10.1063/5.0148068openalex-snapshot
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inferred← citeshttps://doi.org/10.1063/5.0253330openalex-snapshot
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inferred← citeshttps://doi.org/10.1088/1361-6528/ae643bopenalex-snapshot
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inferred← citeshttps://doi.org/10.1109/edtm61175.2025.11040660openalex-snapshot
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inferred← citeshttps://doi.org/10.1116/6.0004562openalex-snapshot
Selective wet etching of atomic layer deposited ferroelectric hafnium zirconium oxide and hafnium oxide thin films
inferred← citeshttps://doi.org/10.1142/s2010135x25200012openalex-snapshot
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Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
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Application of Defect Engineering via ALD in Supercapacitors
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Optimal Process Design for Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitors: Toward Low-Power Devices with Enhanced Ferroelectric Performance
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Direct observation of charge density and electronic polarization in fluorite ferroelectrics by 4D-STEM
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