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Precise Control of Charge Injection, Fatigue, Wake-Up and Break-Down in Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Memories

https://doi.org/10.2139/ssrn.4692701
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inferredcites →https://doi.org/10.1002/adem.202000791openalex-extracted
Defect Engineering to Achieve Wake‐up Free HfO 2 ‐Based Ferroelectrics
inferredcites →https://doi.org/10.1002/adfm.201102685openalex-extracted
Nanoscale Observation of Time‐Dependent Domain Wall Pinning as the Origin of Polarization Fatigue
inferredcites →https://doi.org/10.1002/adfm.201600590openalex-extracted
Physical Mechanisms behind the Field‐Cycling Behavior of HfO 2 ‐Based Ferroelectric Capacitors
inferredcites →https://doi.org/10.1002/aelm.201600173openalex-extracted
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO 2 Thin Films
inferredcites →https://doi.org/10.1002/aelm.201700547openalex-extracted
Analysis of Performance Instabilities of Hafnia‐Based Ferroelectrics Using Modulus Spectroscopy and Thermally Stimulated Depolarization Currents
inferredcites →https://doi.org/10.1002/aelm.201900852openalex-extracted
Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf 0.5 Zr 0.5 O 2 Tunnel Junctions
inferredcites →https://doi.org/10.1002/aelm.202000728openalex-extracted
Wake‐Up Effect in HfO2‐Based Ferroelectric Films
inferredcites →https://doi.org/10.1002/pssr.202100033openalex-extracted
Ferroelectric La‐Doped ZrO2/HfxZr1−xO2 Bilayer Stacks with Enhanced Endurance
inferredcites →https://doi.org/10.1016/j.actamat.2018.05.033openalex-extracted
Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction
inferredcites →https://doi.org/10.1016/j.actamat.2018.12.008openalex-extracted
Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films
inferredcites →https://doi.org/10.1016/j.apsusc.2020.148737openalex-extracted
Significant improvement of ferroelectricity and reliability in Hf0.5Zr0.5O2 films by inserting an ultrathin Al2O3 buffer layer
inferredcites →https://doi.org/10.1016/j.apsusc.2022.153110openalex-extracted
Atomic tailoring of low-thermal-budget and nearly wake-up-free ferroelectric Hf0.5Zr0.5O2 nanoscale thin films by atomic layer annealing
inferredcites →https://doi.org/10.1016/j.jallcom.2023.172083openalex-extracted
Strong piezoelectricity of the nm-thick flexible Hf0.5Zr0.5O2 ferroelectric film
inferredcites →https://doi.org/10.1016/j.jmst.2021.07.016openalex-extracted
Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode
inferredcites →https://doi.org/10.1016/j.mseb.2014.10.003openalex-extracted
Mechanisms of aging and fatigue in ferroelectrics
inferredcites →https://doi.org/10.1021/acsaelm.0c00671openalex-extracted
Large Remnant Polarization in a Wake-Up Free Hf 0.5 Zr 0.5 O 2 Ferroelectric Film through Bulk and Interface Engineering
inferredcites →https://doi.org/10.1021/acsaelm.2c00526openalex-extracted
Effect of Charge Injection on the Switching Speed of Ferroelectric Memory Based on HfO2
inferredcites →https://doi.org/10.1021/acsaelm.8b00046openalex-extracted
Wake-Up in a Hf 0.5 Zr 0.5 O 2 Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching
inferredcites →https://doi.org/10.1021/acsaelm.9b00367openalex-extracted
Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films
inferredcites →https://doi.org/10.1021/acsami.1c22426openalex-extracted
Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1–xZrxO2
inferredcites →https://doi.org/10.1021/acsami.2c11073openalex-extracted
Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films
inferredcites →https://doi.org/10.1021/acsami.7b15110openalex-extracted
Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films
inferredcites →https://doi.org/10.1021/acsami.7b17482openalex-extracted
Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations
inferredcites →https://doi.org/10.1021/am504837ropenalex-extracted
Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide
inferredcites →https://doi.org/10.1038/ncomms5693openalex-extracted
Interface-induced nonswitchable domains in ferroelectric thin films
inferredcites →https://doi.org/10.1038/s41563-018-0196-0openalex-extracted
A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
inferredcites →https://doi.org/10.1038/s41928-020-00492-7openalex-extracted
The future of ferroelectric field-effect transistor technology
inferredcites →https://doi.org/10.1039/c6cp07501kopenalex-extracted
Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition
inferredcites →https://doi.org/10.1039/d0nr07597copenalex-extracted
Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric–dielectric bilayer
inferredcites →https://doi.org/10.1039/d2nr05935eopenalex-extracted
Ferroelectric Hf 0.5 Zr 0.5 O 2 films with improved endurance obtained through low temperature epitaxial growth on seed layers
inferredcites →https://doi.org/10.1063/1.1734685openalex-extracted
Temperature-dependent fatigue behaviors of ferroelectric ABO3-type and layered perovskite oxide thin films
inferredcites →https://doi.org/10.1063/1.4829064openalex-extracted
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
inferredcites →https://doi.org/10.1063/1.4983031openalex-extracted
Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films
inferredcites →https://doi.org/10.1063/1.5092707openalex-extracted
Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO
inferredcites →https://doi.org/10.1063/5.0035652openalex-extracted
Perspective on the switching behavior of HfO2-based ferroelectrics
inferredcites →https://doi.org/10.1063/5.0064700openalex-extracted
Excellent ferroelectric Hf0.5Zr0.5O2 thin films with ultra-thin Al2O3 serving as capping layer
inferredcites →https://doi.org/10.1063/5.0066607openalex-extracted
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
inferredcites →https://doi.org/10.1063/5.0072692openalex-extracted
Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier
inferredcites →https://doi.org/10.1103/revmodphys.77.1083openalex-extracted
Physics of thin-film ferroelectric oxides
inferredcites →https://doi.org/10.1109/led.2019.2944960openalex-extracted
Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
inferredcites →https://doi.org/10.1109/led.2021.3102226openalex-extracted
HfZrOₓ-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering
inferredcites →https://doi.org/10.1109/led.2021.3134178openalex-extracted
High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr1-x O2
inferredcites →https://doi.org/10.1109/led.2021.3135961openalex-extracted
HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability
inferredcites →https://doi.org/10.1109/led.2023.3263294openalex-extracted
Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf0.5Zr0.5O2 Films
inferredcites →https://doi.org/10.1109/led.2023.3311316openalex-extracted
Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films
inferredcites →https://doi.org/10.1109/ted.2020.3034564openalex-extracted
Quantitative Characterization of Interface Traps in Ferroelectric/Dielectric Stack Using Conductance Method
inferredcites →https://doi.org/10.1109/ted.2022.3172244openalex-extracted
Temperature-Dependent Field Cycling Behavior of Ferroelectric Hafnium Zirconium Oxide (HZO) MFM Capacitors
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