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Effect of Oxidizing Agents on the Properties and Structure of Hf0.5zr0.5o2 Thin Films

https://doi.org/10.2139/ssrn.4902332
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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adem.202000791openalex-extracted
Defect Engineering to Achieve Wake‐up Free HfO 2 ‐Based Ferroelectrics
inferredcites →https://doi.org/10.1002/adfm.201900657openalex-extracted
A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics
inferredcites →https://doi.org/10.1016/j.ceramint.2021.10.102openalex-extracted
Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin films
inferredcites →https://doi.org/10.1021/acsami.2c11073openalex-extracted
Role of Oxygen Source on Buried Interfaces in Atomic-Layer-Deposited Ferroelectric Hafnia–Zirconia Thin Films
inferredcites →https://doi.org/10.1021/acsami.2c15369openalex-extracted
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory
inferredcites →https://doi.org/10.1039/d0nr00933dopenalex-extracted
Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode
inferredcites →https://doi.org/10.1063/1.2735945openalex-extracted
Effects of carbon residue in atomic layer deposited HfO2 films on their time-dependent dielectric breakdown reliability
inferredcites →https://doi.org/10.1063/1.3634052openalex-extracted
Ferroelectricity in hafnium oxide thin films
inferredcites →https://doi.org/10.1063/1.4916707openalex-extracted
The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
inferredcites →https://doi.org/10.1109/ted.2019.2961208openalex-extracted
Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors
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