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Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/adfm.201600590openalex-snapshot
Physical Mechanisms behind the Field‐Cycling Behavior of HfO 2 ‐Based Ferroelectric Capacitors
inferredcites →https://doi.org/10.1002/aelm.202000264openalex-snapshot
Involvement of Unsaturated Switching in the Endurance Cycling of Si‐doped HfO 2 Ferroelectric Thin Films
inferredcites →https://doi.org/10.1002/aelm.202100151openalex-snapshot
Time‐Dependent Imprint in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Films
inferredcites →https://doi.org/10.1002/pssa.202070030openalex-snapshot
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
inferredcites →https://doi.org/10.1016/j.mee.2019.111013openalex-snapshot
Ferroelectricity of HfxZr1−xO2 thin films fabricated by 300 °C low temperature process with plasma-enhanced atomic layer deposition
inferredcites →https://doi.org/10.1021/acsami.1c08718openalex-snapshot
Unveiling the Origin of Robust Ferroelectricity in Sub-2 nm Hafnium Zirconium Oxide Films
inferredcites →https://doi.org/10.1021/acsami.7b15110openalex-snapshot
Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films
inferredcites →https://doi.org/10.1021/nl302049kopenalex-snapshot
Ferroelectricity in Simple Binary ZrO 2 and HfO 2
inferredcites →https://doi.org/10.1039/d0nr00933dopenalex-snapshot
Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode
inferredcites →https://doi.org/10.1039/d0tc01695kopenalex-snapshot
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
inferredcites →https://doi.org/10.1063/1.1621731openalex-snapshot
Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films
inferredcites →https://doi.org/10.1063/1.3634052openalex-snapshot
Ferroelectricity in hafnium oxide thin films
inferredcites →https://doi.org/10.1063/1.3636417openalex-snapshot
Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
inferredcites →https://doi.org/10.1063/1.4811483openalex-snapshot
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
inferredcites →https://doi.org/10.1063/1.4916707openalex-snapshot
The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
inferredcites →https://doi.org/10.1063/1.4927805openalex-snapshot
Stabilizing the ferroelectric phase in doped hafnium oxide
inferredcites →https://doi.org/10.1063/1.4935588openalex-snapshot
Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling
inferredcites →https://doi.org/10.1063/1.4995619openalex-snapshot
Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
inferredcites →https://doi.org/10.1063/1.5017094openalex-snapshot
Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm
inferredcites →https://doi.org/10.1063/1.5052012openalex-snapshot
Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors
inferredcites →https://doi.org/10.1063/5.0035650openalex-snapshot
Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors
inferredcites →https://doi.org/10.1063/5.0051068openalex-snapshot
Antiferroelectric properties of ZrO2 ultra-thin films prepared by atomic layer deposition
inferredcites →https://doi.org/10.1063/5.0075466openalex-snapshot
Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing
inferredcites →https://doi.org/10.1063/5.0091661openalex-snapshot
Wake-up-free properties and high fatigue resistance of HfxZr1−xO2-based metal–ferroelectric–semiconductor using top ZrO2 nucleation layer at low thermal budget (300 °C)
inferredcites →https://doi.org/10.1103/physrevmaterials.5.114407openalex-snapshot
Thickness dependence of phase stability in epitaxial (HfxZr1−x)O2 films
inferredcites →https://doi.org/10.1109/16.285029openalex-snapshot
Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation
inferredcites →https://doi.org/10.1109/iedm19573.2019.8993464openalex-snapshot
Material perspectives of HfO2-based ferroelectric films for device applications
inferredcites →https://doi.org/10.1109/iedm19574.2021.9720545openalex-snapshot
Low Voltage and High Speed 1Xnm 1T1C FE-RAM with Ultra-Thin 5nm HZO
inferredcites →https://doi.org/10.1109/imw.2015.7150275openalex-snapshot
A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1017-Cycle Endurance
inferredcites →https://doi.org/10.1109/jeds.2021.3129279openalex-snapshot
1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline
inferredcites →https://doi.org/10.1109/led.2002.803751openalex-snapshot
Area dependence of TDDB characteristics for HfO2 gate dielectrics
inferredcites →https://doi.org/10.1109/led.2019.2944960openalex-snapshot
Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
inferredcites →https://doi.org/10.1109/led.2020.3019265openalex-snapshot
Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing
inferredcites →https://doi.org/10.1109/led.2021.3097332openalex-snapshot
Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf0.5Zr0.5O2 Film
inferredcites →https://doi.org/10.1109/led.2021.3102604openalex-snapshot
Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality
inferredcites →https://doi.org/10.1109/snw50361.2020.9131648openalex-snapshot
Performance assessment of BEOL-integrated HfO2-based ferroelectric capacitors for FeRAM memory arrays
inferredcites →https://doi.org/10.1109/tdmr.2012.2216269openalex-snapshot
Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications
inferredcites →https://doi.org/10.1109/vlsitechnology18217.2020.9265061openalex-snapshot
Nanosecond Laser Anneal (NLA) for Si-Implanted HfO2 Ferroelectric Memories Integrated in Back-End of Line (BEOL)
inferredcites →https://doi.org/10.1134/1.1386472openalex-snapshot
General features of the intrinsic ferroelectric coercive field
inferredcites →https://doi.org/10.23919/vlsit.2019.8776548openalex-snapshot
Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density
inferredcites →https://doi.org/10.3390/nano11082141openalex-snapshot
Enhancement of Energy-Storage Density in PZT/PZO-Based Multilayer Ferroelectric Thin Films
inferredcites →https://doi.org/10.35848/1882-0786/ab9a92openalex-snapshot
Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application
inferredcites →https://doi.org/10.7567/jjap.57.04fb01openalex-snapshot
Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics
inferredcites →https://doi.org/10.7567/jjap.57.11ua01openalex-snapshot
Development of highly reliable ferroelectric random access memory and its Internet of Things applications
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Effect of Oxidizing Agents on the Properties and Structure of Hf0.5zr0.5o2 Thin Films
inferred← citeshttps://doi.org/10.1002/9783527844869.ch06openalex-snapshot
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Interface‐Modulated Antiferroelectric‐to‐Ferroelectric‐Like Transition in Ultrathin Hf 0.5 Zr 0.5 O 2 Films
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Scaling Effects on Ferroelectric Polarization Switching and Activation Electric Field in Epitaxial Hf 0.5 Zr 0.5 O 2 Nanodots
inferred← citeshttps://doi.org/10.1002/adfm.202529461openalex-snapshot
Local Interlaminar Diffusion Drives Excellent Ferroelectricity and Reliability in Zirconium‐Rich Hafnia‐Based Multilayer Films
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Ultrathin Ferroelectric Hf 0.5 Zr 0.5 O 2 Films With Exceptional Endurance Enabled by Oxygen‐Engineered Nanolaminates
inferred← citeshttps://doi.org/10.1002/adma.202509525openalex-snapshot
Advancing the Frontiers of HfO 2 ‐Based Ferroelectric Memories: Innovative Concepts from Materials to Applications
inferred← citeshttps://doi.org/10.1002/adma.202517269openalex-snapshot
Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era
inferred← citeshttps://doi.org/10.1002/admi.202400185openalex-snapshot
Low Voltage High Polarization by Optimizing Scavenged WNx Interfacial Capping Layer at the Ru/HfxZr1‐xO2 Interface and Evidence of Fatigue Mechanism
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Record High Polarization at 2 V and Imprint‐Free Operation in Superlattice HfO 2 ‐ZrO 2 by Proper Tuning of Ferro and Antiferroelectricity
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Strategies for Reducing Operating Voltage of Ferroelectric Hafnia by Decreasing Coercive Field and Film Thickness
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Ultrathin Hafnium‐Based Ferroelectric Devices for In‐Memory Computing Applications
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Impact of the Crystal Structure of Interlayer on the Properties of Zr‐Doped Hafnia‐Based Ferroelectric Capacitor
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Stabilization of Morphotropic Phase Boundary in Hafnia via Microwave Low‐Temperature Crystallization Process for Next‐Generation Dynamic Random Access Memory Technology
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Sub‐Nanometer Ferroelectric Tunnel Junctions With Record‐High on‐Current Density Through Synergistic Microwave Annealing and High‐Field Activation
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Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering
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Visualization of grain boundary-mediated domain nucleation and growth in polycrystalline Pb(Zr52Ti48)O3 ferroelectric capacitor
inferred← citeshttps://doi.org/10.1063/5.0296979openalex-snapshot
Ultralow fatigue in hafnia-based ferroelectric capacitors achieved by suppressing cycling-induced phase transitions through unconventional oxygen-vacancy redistribution
inferred← citeshttps://doi.org/10.1063/5.0311032openalex-snapshot
Improved Ec control in Hf1−xZrxO2 FeNAND applications using SiO2 nanolaminate structure
inferred← citeshttps://doi.org/10.1063/5.0316330openalex-snapshot
Performance variability in ferroelectric tunnel junctions: Impact of intrinsic fluctuations and spatial phase randomness
inferred← citeshttps://doi.org/10.1063/5.0325078openalex-snapshot
Electric-field dependence of cycle endurance in HfO2-based ferroelectric capacitors
inferred← citeshttps://doi.org/10.1063/5.0333738openalex-snapshot
Operational cycling voltage dependence of the oxygen vacancy distribution in 6 nm Hf0.5Zr0.5O2 ferroelectric capacitors
inferred← citeshttps://doi.org/10.1063/5.0336818openalex-snapshot
HZO thickness-dependent charge loss mechanisms in HfO2-based MIFIS FeFETs
inferred← citeshttps://doi.org/10.1063/5.0347631openalex-snapshot
Origin of peak splitting in polydomain Hf0.5Zr0.5O2 ferroelectric capacitors
inferred← citeshttps://doi.org/10.1080/19475411.2023.2195686openalex-snapshot
The frequency-dependent polarization switching in nanograined BaTiO3 films under high-strength electric field
inferred← citeshttps://doi.org/10.1088/1361-6463/acee09openalex-snapshot
Ferroelectric source follower for voltage-sensing nonvolatile memory and computing-in-memory
inferred← citeshttps://doi.org/10.1088/1361-6463/ad7036openalex-snapshot
Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions
inferred← citeshttps://doi.org/10.1088/1361-6528/ae93c4openalex-snapshot
Oxygen vacancy engineering for BEOL-compatible thickness-scaled Hafnia ferroelectrics
inferred← citeshttps://doi.org/10.1093/nsr/nwag049openalex-snapshot
Back-end-of-line-compatible low-voltage operation in Hf0.5 Zr0.5O2 ferroelectric film enabled by in-situ lanthanum doping
inferred← citeshttps://doi.org/10.1103/kkk8-s3lkopenalex-snapshot
Soft mode-driven reduction of switching energy barriers in fluorite ferroelectric
inferred← citeshttps://doi.org/10.1103/physrevmaterials.8.084402openalex-snapshot
Ferroelectric switching and field effect of Pb ( Z r 0.7 T i 0.3 ) O 3 on B a 1 − x L a x Sn O 3
inferred← citeshttps://doi.org/10.1109/asicon66040.2025.11326262openalex-snapshot
1.2 V Operation of Hf 0.5 Zr 0.5 O 2 Ferroelectric Thinfilm Capacitors for Low-Power ASICs after Interfacial-layer Engineering
inferred← citeshttps://doi.org/10.1109/edr.2026.3716908openalex-snapshot
Amorphous Oxide Semiconductor Transistors for Monolithic 3D Integrated Circuits
inferred← citeshttps://doi.org/10.1109/edtm55494.2023.10102996openalex-snapshot
Hafnia-based ferroelectric devices for lower power memory and AI applications
inferred← citeshttps://doi.org/10.1109/edtm58488.2024.10511710openalex-snapshot
Trade-off Between Thermal Budget and Thickness Scaling: A Bottleneck on Quest for BEOL Compatible Ultra-Thin Ferroelectric Films Sub-5nm
inferred← citeshttps://doi.org/10.1109/edtm61175.2025.11040208openalex-snapshot
Toward Low-Thermal-Budget Processing and Low-Voltage Operating in Ferroelectric Stack Films by Introducing ZrO2 Middle Layer
inferred← citeshttps://doi.org/10.1109/icsict62049.2024.10831934openalex-snapshot
Low Operating Voltage in HfO2/ZrO2 Superlattice Ferroelectric Capacitor Achieved by Thickness Scaling
inferred← citeshttps://doi.org/10.1109/iedm45741.2023.10413877openalex-snapshot
Wake-Up of Ultrathin Ferroelectric Hf0.5Zr0.5O2: The Origin and Physical Modeling
inferred← citeshttps://doi.org/10.1109/iedm50572.2025.11353770openalex-snapshot
Direct Observation of Nanoscale Polarization Switching in HZO Ferroelectrics Using STEM-EBIC
inferred← citeshttps://doi.org/10.1109/imw56887.2023.10145972openalex-snapshot
Memory Window in Si:HfO2 FeRAM arrays: Performance Improvement and Extrapolation at Advanced Nodes
inferred← citeshttps://doi.org/10.1109/irps48203.2023.10118099openalex-snapshot
Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)
inferred← citeshttps://doi.org/10.1109/irps48204.2025.10983902openalex-snapshot
Record-Low EOT(3.6Å) & J leak (7×10 -8 A/cm 2 @0.8V) HZO by Dielectric-Selective Microwave Annealing
inferred← citeshttps://doi.org/10.1109/irps48228.2024.10529344openalex-snapshot
Robustness to Device Degradation in Silicon FeFET-based Reservoir Computing (Invited)
inferred← citeshttps://doi.org/10.1109/irps48228.2024.10529427openalex-snapshot
Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays
inferred← citeshttps://doi.org/10.1109/irps61424.2026.11499194openalex-snapshot
Origin of Pinched Hysteresis Loop: Unified Model for Wake-Up and Imprint in Sub-5 nm Ferroelectric HZO
inferred← citeshttps://doi.org/10.1109/jeds.2024.3471819openalex-snapshot
Exploring BEOL-Compatible Ferroelectricity in Ultra-Thin Hafnium–Zirconium Oxide: Thermal Budget, FTJ Characteristics, and Device Reliability
inferred← citeshttps://doi.org/10.1109/led.2023.3263294openalex-snapshot
Significant Reliability Improvement by Inducing Dual Atomic-Thin Titanium Intercalation Layers in Hf0.5Zr0.5O2 Films
inferred← citeshttps://doi.org/10.1109/led.2024.3410378openalex-snapshot
Demonstration of Wake-Up Free 6 nm Ultrathin ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With High Endurance Against Fatigue
inferred← citeshttps://doi.org/10.1109/led.2024.3513397openalex-snapshot
Monolithic 3D Integration of 1T1C AFeRAM With InGaZnO/InO Dual-Channel FET and AFE ZrO 2 Capacitor for Low-Power and High-Density Embedded Nonvolatile Memory
inferred← citeshttps://doi.org/10.1109/led.2025.3603933openalex-snapshot
Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf 0.5 Zr 0.5 O 2 Capacitors
inferred← citeshttps://doi.org/10.1109/led.2026.3661469openalex-snapshot
Top-ZrO 2 Interface–Engineered ZrO 2 /HZO Ferroelectric Superlattices With Highly Stable Polarization Switching Over 10 11 Cycles
inferred← citeshttps://doi.org/10.1109/led.2026.3712510openalex-snapshot
Interlayer-Engineered Vertical InO x -Channel FeFETs With Two-Step Annealing for 2-bit/cell Operation
inferred← citeshttps://doi.org/10.1109/led.2026.3715436openalex-snapshot
Interfacial Field Compensation Using NbO x Insertion Layer for Switching Symmetry in Ga-Doped HfO 2 Ferroelectric Capacitors
inferred← citeshttps://doi.org/10.1109/nems67320.2025.11169898openalex-snapshot
Neuromorphic Computing Based on AlN/HZO Ferroelectric Tunnel Junction
inferred← citeshttps://doi.org/10.1109/ted.2023.3244900openalex-snapshot
Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors
inferred← citeshttps://doi.org/10.1109/ted.2023.3270397openalex-snapshot
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness
inferred← citeshttps://doi.org/10.1109/ted.2024.3374245openalex-snapshot
Polarization and Reliability Enhancement for Ferroelectric Capacitors by Interface Engineering Through Crystalline TaN
inferred← citeshttps://doi.org/10.1109/ted.2024.3379473openalex-snapshot
Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O₂: Interfacial Layer Soft Breakdown and Physical Modeling
inferred← citeshttps://doi.org/10.1109/ted.2024.3386508openalex-snapshot
Understanding HZO Thickness Scaling in Si FeFETs: Low Operating Voltage, Fast Wake-Up, and Suppressed Charge Trapping
inferred← citeshttps://doi.org/10.1109/ted.2024.3418372openalex-snapshot
Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C)
inferred← citeshttps://doi.org/10.1109/ted.2024.3429289openalex-snapshot
Anti-Ferroelectric ZrO2 Capacitors With Ultralow Operating Voltage (<1.2 V) and Improved Endurance Toward Logic Compatible eDRAM
inferred← citeshttps://doi.org/10.1109/ted.2024.3493065openalex-snapshot
Recovery Strategy of Fatigue-Limited Endurance in Si FeFETs With Thin HfZrO₂ Films
inferred← citeshttps://doi.org/10.1109/ted.2024.3502032openalex-snapshot
C -Axis Oriented HZO on Flat Amorphous TiN Achieving High Uniformity, Breakdown Field, Final 2P r , and Endurance
inferred← citeshttps://doi.org/10.1109/ted.2025.3560272openalex-snapshot
High-Storage, Low-Variability, and Low-Power Read-After-Write Superlattice HfO2/ZrO2 FeFET Memory Device by Using a Multifunctional MoOx/TiON Layer
inferred← citeshttps://doi.org/10.1109/ted.2025.3566357openalex-snapshot
A Comprehensive Study on the Polarization, Reliability, and Switching Dynamics of Helium Ion-Bombardment HfZrO Ferroelectric Films
inferred← citeshttps://doi.org/10.1109/ted.2025.3566689openalex-snapshot
Impact of Hf Doping on Half-Loop Operations of ZrO2-Based Antiferroelectric Thin Films
inferred← citeshttps://doi.org/10.1109/ted.2025.3585905openalex-snapshot
Robust Ferroelectricity and Suppressed Leakage Current in Ultrathin (≤4 nm) HfO2/ZrO2 Nanolaminates With Ru-TiN Asymmetric Electrodes
inferred← citeshttps://doi.org/10.1109/ted.2025.3628364openalex-snapshot
Wake-Up Mechanism With De-Pinning Dynamics in Ultrathin Hf 0.5 Zr 0.5 O 2 : Understanding Frequency and Temperature Dependences
inferred← citeshttps://doi.org/10.1109/ted.2026.3660246openalex-snapshot
Exceptional Thickness Scalability of MFM Stack: Outstanding Performance in 3-nm TiN/3-nm HZO/3-nm TiN Capacitors
inferred← citeshttps://doi.org/10.1109/ted.2026.3661380openalex-snapshot
Overcoming Size Effect With Low-Thermal-Budget Supercritical Fluid Oxygen Treatment for HZO-Based Ferroelectric Capacitors
inferred← citeshttps://doi.org/10.1109/ted.2026.3664281openalex-snapshot
Nonvolatile Half-Loop Operation of ZrO 2 Antiferroelectric Capacitors Enabled by a TiO 2 -Rich Interfacial Layer
inferred← citeshttps://doi.org/10.1109/tmat.2024.3423665openalex-snapshot
On the Thickness Scaling of Ferroelectric Hafnia
inferred← citeshttps://doi.org/10.1109/tmat.2024.3497835openalex-snapshot
Future Materials for Beyond Si Integrated Circuits: A Perspective
inferred← citeshttps://doi.org/10.1109/tmat.2025.3586809openalex-snapshot
BEOL-Compatible 5.6 nm Ultrathin HZO With Molybdenum Nitride Electrode and IN 2 O 3 Channel Devices for Enhanced Ferroelectricity and Reliability
inferred← citeshttps://doi.org/10.1109/tnano.2024.3407817openalex-snapshot
BEOL-Compatible Ferroelectric Capacitor of 5 nm Ultrathin HZO With High Remanent Polarization and Excellent Endurance
inferred← citeshttps://doi.org/10.1116/6.0005311openalex-snapshot
In vacuo investigation of atomic layer deposition of HfO2 thin films on TiN: A low energy ion scattering and x-ray photoelectron spectroscopy study of interface evolution
inferred← citeshttps://doi.org/10.1116/6.0005641openalex-snapshot
Titanium nitride and hafnium-zirconium oxide thin film plasma etching for ferroelectric nonvolatile memory applications. I. Etching mechanisms and processes development
inferred← citeshttps://doi.org/10.1126/sciadv.ads4925openalex-snapshot
Giant switchable ferroelectric photovoltage in double-perovskite epitaxial films through chemical negative strain
inferred← citeshttps://doi.org/10.1186/s40580-025-00477-2openalex-snapshot
Effect of La and Si additives in Zr-doped HfO2 capacitors for pseudo-linear high-κ dielectric applications
inferred← citeshttps://doi.org/10.1186/s40580-025-00520-2openalex-snapshot
Recent advances in ferroelectric materials, devices, and in-memory computing applications
inferred← citeshttps://doi.org/10.21203/rs.3.rs-7699479/v1openalex-snapshot
Fabrication of vacancy-independent and intrinsically stable ferroelectric HfO2 through valence-complementary codoping
inferred← citeshttps://doi.org/10.21203/rs.3.rs-7699479/v2openalex-snapshot
Fabrication of vacancy-independent and intrinsically stable ferroelectric HfO2 through valence-complementary codoping
inferred← citeshttps://doi.org/10.21203/rs.3.rs-7699479/v3openalex-snapshot
Fabrication of vacancy-independent and intrinsically stable ferroelectric HfO2 through valence-complementary codoping
inferred← citeshttps://doi.org/10.23919/vlsitechnologyandcir57934.2023.10185295openalex-snapshot
HZO Scaling and Fatigue Recovery in FeFET with Low Voltage Operation: Evidence of Transition from Interface Degradation to Ferroelectric Fatigue
inferred← citeshttps://doi.org/10.26599/jac.2024.9220852openalex-snapshot
Depolarization mitigated in ferroelectric Hf 0.5Zr 0.5O 2 ultrathin films (< 5 nm) on Si substrate by interface engineering
inferred← citeshttps://doi.org/10.3389/felec.2022.1091343openalex-snapshot
Breakdown-limited endurance in HZO FeFETs: Mechanism and improvement under bipolar stress
inferred← citeshttps://doi.org/10.3390/electronics14091794openalex-snapshot
Nonvolatile Applications and Reliability Investigation of La-Doped ZrO2 Antiferroelectric Capacitors
inferred← citeshttps://doi.org/10.3390/nano15151166openalex-snapshot
Binary-Weighted Neural Networks Using FeRAM Array for Low-Power AI Computing
inferred← citeshttps://doi.org/10.35848/1347-4065/ad20b2openalex-snapshot
Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer
inferred← citeshttps://doi.org/10.35848/1347-4065/adb163openalex-snapshot
Unipolar polarization switching and high-endurance memory operation of HZO/Si anti-ferroelectric FETs
inferred← citeshttps://doi.org/10.35848/1347-4065/adbbf8openalex-snapshot
50-fold endurance improvement in HfO 2 -based ferroelectric capacitor through hybrid recovery schemes
inferred← citeshttps://doi.org/10.35848/1347-4065/adf85copenalex-snapshot
Evaluation of analog memory characteristics of HfO 2 -based ferroelectric thin films
inferred← citeshttps://doi.org/10.35848/1347-4065/adfae1openalex-snapshot
Physical reservoir computing using ferroelectric Hf1−x Zr x O2 devices for efficient temporal data processing: recent progress of materials, devices, and operating modes
inferred← citeshttps://doi.org/10.35848/1347-4065/ae4a2dopenalex-snapshot
Thickness dependence below 10 nm on the ferroelectric HfN 1.15 thin film formation by ECR-plasma sputtering
inferred← citeshttps://doi.org/10.35848/1347-4065/ae5662openalex-snapshot
Interface engineering of HfO 2 -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO 2 nucleation layers
inferred← citeshttps://doi.org/10.35848/1347-4065/ae6765openalex-snapshot
Dynamic dielectric-constant enhancement in Hf 1− x Zr x O 2 high- k dielectrics revealed by fast C – V measurement
inferred← citeshttps://doi.org/10.35848/1882-0786/adf372openalex-snapshot
Data processing capability of polarization dynamics in ferroelectric-gate transistor-based physical reservoir computing
inferred← citeshttps://doi.org/10.70675/10b59c79z4a7ez4899z9766z5553ce8ac810openalex-snapshot
Electrical Characterization of Ferroelectric Tunnel Junctions based on Hafnium Oxide for Neuromorphic Applications
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