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Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/adfm.201600590openalex-snapshot
Physical Mechanisms behind the Field‐Cycling Behavior of HfO 2 ‐Based Ferroelectric Capacitors
inferredcites →https://doi.org/10.1002/adma.201404531openalex-snapshot
Ferroelectricity and Antiferroelectricity of Doped Thin HfO 2 ‐Based Films
inferredcites →https://doi.org/10.1002/aelm.201600173openalex-snapshot
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO 2 Thin Films
inferredcites →https://doi.org/10.1002/aelm.201700131openalex-snapshot
Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System
inferredcites →https://doi.org/10.1002/pssa.201700056openalex-snapshot
Low temperature plasma‐enhanced ALD TiN ultrathin films for Hf0.5Zr0.5O2‐based ferroelectric MIM structures
inferredcites →https://doi.org/10.1016/0390-5519(75)90032-0openalex-snapshot
Phase relationships in the systems HfO2-La2O3 and HfO2-Nd2O3
inferredcites →https://doi.org/10.1016/j.apsusc.2017.05.010openalex-snapshot
Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
inferredcites →https://doi.org/10.1016/j.mee.2015.04.024openalex-snapshot
Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films
inferredcites →https://doi.org/10.1016/j.mee.2017.05.028openalex-snapshot
Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si
inferredcites →https://doi.org/10.1021/acs.jpcc.6b04461openalex-snapshot
Atomic Layer Deposition of Iridium Thin Films Using Sequential Oxygen and Hydrogen Pulses
inferredcites →https://doi.org/10.1021/acsami.5b05773openalex-snapshot
Complex Internal Bias Fields in Ferroelectric Hafnium Oxide
inferredcites →https://doi.org/10.1021/acsami.5b11653openalex-snapshot
Ultrathin Hf0.5Zr0.5O2 Ferroelectric Films on Si
inferredcites →https://doi.org/10.1021/nl302049kopenalex-snapshot
Ferroelectricity in Simple Binary ZrO 2 and HfO 2
inferredcites →https://doi.org/10.1039/c5tc01074hopenalex-snapshot
Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf 0.5 Zr 0.5 O 2 thin films
inferredcites →https://doi.org/10.1039/c6tc04807bopenalex-snapshot
An extensive study of the influence of dopants on the ferroelectric properties of HfO 2
inferredcites →https://doi.org/10.1039/c7nr06342copenalex-snapshot
Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films
inferredcites →https://doi.org/10.1039/c7tc01200dopenalex-snapshot
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants
inferredcites →https://doi.org/10.1063/1.112211openalex-snapshot
Electronic domain pinning in Pb(Zr,Ti)O3 thin films and its role in fatigue
inferredcites →https://doi.org/10.1063/1.3634052openalex-snapshot
Ferroelectricity in hafnium oxide thin films
inferredcites →https://doi.org/10.1063/1.4811483openalex-snapshot
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
inferredcites →https://doi.org/10.1063/1.4916707openalex-snapshot
The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
inferredcites →https://doi.org/10.1063/1.4953787openalex-snapshot
Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
inferredcites →https://doi.org/10.1063/1.4966219openalex-snapshot
Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties
inferredcites →https://doi.org/10.1063/1.4999291openalex-snapshot
Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition
inferredcites →https://doi.org/10.1103/physrevb.90.064111openalex-snapshot
Pathways towards ferroelectricity in hafnia
inferredcites →https://doi.org/10.1109/iedm.2013.6724605openalex-snapshot
Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
inferredcites →https://doi.org/10.1109/led.2012.2228162openalex-snapshot
Dielectric Stacking Effect of $\hbox{Al}_{2} \hbox{O}_{3}$ and $\hbox{HfO}_{2}$ in Metal–Insulator–Metal Capacitor
inferredcites →https://doi.org/10.1109/sispad.2009.5290225openalex-snapshot
Effects of Ionic Doping on the Behaviors of Oxygen Vacancies in HfO2 and ZrO2: A First Principles Study
inferredcites →https://doi.org/10.1134/s0021364015200047openalex-snapshot
Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2
inferredcites →https://doi.org/10.1557/jmr.2004.0089openalex-snapshot
Effect of La and Y on Crystallization Temperatures of Hafnia and Zirconia
inferredcites →https://doi.org/10.2478/s11534-011-0096-2openalex-snapshot
Gwyddion: an open-source software for SPM data analysis
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing
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Enhanced Ferroelectric Properties in Hf0.5Zr0.5O2 Films Using a HfO0.61N0.72 Interfacial Layer
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Performance Enhancement in Hafnium Oxide Through Homogeneous and Heterogeneous co‐Doping Strategies
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Deposition-Driven Phase Evolution in Hf1– x Zr x O2 Enabled by a Thermally Stabilized Cyclopentadienyl Precursor System
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Defects and Aliovalent Doping Engineering in Electroceramics
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Oxygen Vacancies as Traps Responsible for La-Doped Hf0.5Zr0.5O2 Charge Transport
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Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry
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Mechanical Polarization Switching in Hf0.5Zr0.5O2 Thin Film
inferred← citeshttps://doi.org/10.1021/acs.nanolett.4c00263openalex-snapshot
Domain Switching Characteristics in Ga-Doped HfO2 Ferroelectric Thin Films with Low Coercive Field
inferred← citeshttps://doi.org/10.1021/acs.nanolett.4c05671openalex-snapshot
Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance
inferred← citeshttps://doi.org/10.1021/acs.nanolett.5c04597openalex-snapshot
Defect Engineering of HfO 2 -Based Thin Films for Simultaneously Achieving High Polarization and Excellent Fatigue Resistance: Mediating Double-Edged Role of Oxygen Vacancies
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00560openalex-snapshot
Epitaxial Ferroelectric La-Doped Hf0.5Zr0.5O2 Thin Films
inferred← citeshttps://doi.org/10.1021/acsaelm.1c00110openalex-snapshot
Epitaxial Ferroelectric HfO 2 Films: Growth, Properties, and Devices
inferred← citeshttps://doi.org/10.1021/acsaelm.1c00330openalex-snapshot
Temperature-Dependent Subcycling Behavior of Si-Doped HfO2 Ferroelectric Thin Films
inferred← citeshttps://doi.org/10.1021/acsaelm.2c00063openalex-snapshot
High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition
inferred← citeshttps://doi.org/10.1021/acsaelm.2c01131openalex-snapshot
Poling Sequence-Dependent Tunneling Electroresistance in HfO2-Based Ferroelectric Tunnel Junctions
inferred← citeshttps://doi.org/10.1021/acsaelm.4c00630openalex-snapshot
Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer Deposition
inferred← citeshttps://doi.org/10.1021/acsaelm.4c01988openalex-snapshot
The Wake-Up Behavior in Bi1/2(Na0.8K0.2)1/2TiO3 Thin Films by Nb Doping
inferred← citeshttps://doi.org/10.1021/acsaelm.5c01813openalex-snapshot
Two-Inch Y-Doped Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Fabricated by Chemical Solution Deposition
inferred← citeshttps://doi.org/10.1021/acsaelm.6c00835openalex-snapshot
Ferroelectric and Electrical Properties of Hf0.5Zr0.5O2 Thin Films with Different Trivalent Dopants
inferred← citeshttps://doi.org/10.1021/acsaelm.9b00107openalex-snapshot
Thermally Stable and Radiation Hard Ferroelectric Hf0.5Zr0.5O2 Thin Films on Muscovite Mica for Flexible Nonvolatile Memory Applications
inferred← citeshttps://doi.org/10.1021/acsaelm.9b00367openalex-snapshot
Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films
inferred← citeshttps://doi.org/10.1021/acsami.0c10964openalex-snapshot
Enhanced Ferroelectric Properties and Insulator–Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VOx-Capped Hf0.5Zr0.5O2 Thin Films
inferred← citeshttps://doi.org/10.1021/acsami.0c11155openalex-snapshot
Frequency Mixing with HfO2-Based Ferroelectric Transistors
inferred← citeshttps://doi.org/10.1021/acsami.0c18276openalex-snapshot
A Bright New World of Ferroelectrics: Magic of Spontaneous Polarization
inferred← citeshttps://doi.org/10.1021/acsami.2c15369openalex-snapshot
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory
inferred← citeshttps://doi.org/10.1021/acsami.3c02209openalex-snapshot
High-Performance Self-Driven Solar-Blind Ultraviolet Photodetectors Based on HfZrO 2 /β-Ga 2 O 3 Heterojunctions
inferred← citeshttps://doi.org/10.1021/acsami.3c15732openalex-snapshot
HfO2–ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed
inferred← citeshttps://doi.org/10.1021/acsami.3c16427openalex-snapshot
High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate Oxide
inferred← citeshttps://doi.org/10.1021/acsami.4c08641openalex-snapshot
Demonstration of 1 V Reliable FeRAM Operation: V c Engineering Using Quasi-Chirality of Hf 1– x Zr x O 2 in a Nanolaminate Structure
inferred← citeshttps://doi.org/10.1021/acsami.4c08988openalex-snapshot
Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility
inferred← citeshttps://doi.org/10.1021/acsami.5c16637openalex-snapshot
Enhancing Performance and Reliability of FeNAND Hybrid Memory via a 2D-WS 2 Layer for Charge Trapping and Ferroelectric Crystallization
inferred← citeshttps://doi.org/10.1021/acsami.8b13173openalex-snapshot
Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films
inferred← citeshttps://doi.org/10.1021/acsami.8b15576openalex-snapshot
Morphotropic Phase Boundary of Hf1–xZrxO2 Thin Films for Dynamic Random Access Memories
inferred← citeshttps://doi.org/10.1021/acsami.9b07973openalex-snapshot
Ferroelectric Control of Magnetism in Ultrathin HfO2\Co\Pt Layers
inferred← citeshttps://doi.org/10.1021/acsanm.9b01539openalex-snapshot
Synthesis of Large Area Two-Dimensional MoS 2 Films by Sulfurization of Atomic Layer Deposited MoO 3 Thin Film for Nanoelectronic Applications
inferred← citeshttps://doi.org/10.1021/acsmaterialslett.2c00911openalex-snapshot
Photoelectric Memristor-Based Machine Vision for Artificial Intelligence Applications
inferred← citeshttps://doi.org/10.1021/acsomega.3c01561openalex-snapshot
Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications
inferred← citeshttps://doi.org/10.1038/s41377-024-01555-6openalex-snapshot
Thin film ferroelectric photonic-electronic memory
inferred← citeshttps://doi.org/10.1038/s41467-023-37560-3openalex-snapshot
Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films
inferred← citeshttps://doi.org/10.1038/s41467-025-68221-2openalex-snapshot
Write cycling endurance exceeding 1010 in sub-50 nm ferroelectric AlScN
inferred← citeshttps://doi.org/10.1038/s41524-023-01075-8openalex-snapshot
Point-defect-driven flattened polar phonon bands in fluorite ferroelectrics
inferred← citeshttps://doi.org/10.1038/s41524-025-01515-7openalex-snapshot
Unraveling the origins of ferroelectricity in doped hafnia through carrier-mediated phase transitions
inferred← citeshttps://doi.org/10.1038/s41528-025-00379-7openalex-snapshot
The enhanced ferroelectric properties of flexible Hf0.85Ce0.15O2 thin films based on in situ stress regulation
inferred← citeshttps://doi.org/10.1038/s41565-023-01361-yopenalex-snapshot
Wurtzite and fluorite ferroelectric materials for electronic memory
inferred← citeshttps://doi.org/10.1039/d0nr02204gopenalex-snapshot
High polarization, endurance and retention in sub-5 nm Hf 0.5 Zr 0.5 O 2 films
inferred← citeshttps://doi.org/10.1039/d0tc01695kopenalex-snapshot
Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
inferred← citeshttps://doi.org/10.1039/d1qi00167aopenalex-snapshot
Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2 -based ferroelectrics
inferred← citeshttps://doi.org/10.1039/d4tc03024aopenalex-snapshot
Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO 2 thin films
inferred← citeshttps://doi.org/10.1039/d5mh00397kopenalex-snapshot
Humidity-driven modulation of ferroelectricity in hafnia–zirconia membranes
inferred← citeshttps://doi.org/10.1039/d5mh01563dopenalex-snapshot
High-performance dynamic random access memory capacitor with an equivalent oxide thickness of 0.31 nm via stepwise cycling in Y-doped Hf 0.5 Zr 0.5 O 2 thin films
inferred← citeshttps://doi.org/10.1039/d5ta02301gopenalex-snapshot
Low coercive field in quasi-epitaxial Al-doped HfO 2 films for energy-efficient ferroelectric memories
inferred← citeshttps://doi.org/10.1039/d5tc03304gopenalex-snapshot
Enhancing remnant polarization in ferroelectric Hf 0.5 Zr 0.5 O 2 thin films by oxygen-diffusive interlayers
inferred← citeshttps://doi.org/10.1063/1.5027516openalex-snapshot
Tiered deposition of sub-5 nm ferroelectric Hf1-xZrxO2 films on metal and semiconductor substrates
inferred← citeshttps://doi.org/10.1063/1.5031491openalex-snapshot
Model of dielectric breakdown in hafnia-based ferroelectric capacitors
inferred← citeshttps://doi.org/10.1063/1.5041715openalex-snapshot
Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
inferred← citeshttps://doi.org/10.1063/1.5045288openalex-snapshot
La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors
inferred← citeshttps://doi.org/10.1063/1.5050700openalex-snapshot
Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping
inferred← citeshttps://doi.org/10.1063/1.5052012openalex-snapshot
Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors
inferred← citeshttps://doi.org/10.1063/1.5063757openalex-snapshot
Formation of polar phase in Fe-doped ZrO2 epitaxial thin films
inferred← citeshttps://doi.org/10.1063/1.5093793openalex-snapshot
Switching dynamics of ferroelectric HfO2-ZrO2 with various ZrO2 contents
inferred← citeshttps://doi.org/10.1063/1.5096002openalex-snapshot
Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates
inferred← citeshttps://doi.org/10.1063/1.5110668openalex-snapshot
Observing large ferroelectric polarization in top-electrode-free Al:HfO2 thin films with Al-rich strip structures
inferred← citeshttps://doi.org/10.1063/1.5118737openalex-snapshot
A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices
inferred← citeshttps://doi.org/10.1063/1.5128502openalex-snapshot
Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface
inferred← citeshttps://doi.org/10.1063/5.0011663openalex-snapshot
Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes
inferred← citeshttps://doi.org/10.1063/5.0012595openalex-snapshot
Interface chemistry of pristine TiN/La:Hf0.5Zr0.5O2 capacitors
inferred← citeshttps://doi.org/10.1063/5.0013511openalex-snapshot
Excellent ferroelectricity of 50 nm-thick doped HfO2 thin films induced by annealing with a rapid-heating-temperature process
inferred← citeshttps://doi.org/10.1063/5.0021007openalex-snapshot
Lanthanum doping induced structural changes and their implications on ferroelectric properties of Hf1−xZrxO2 thin film
inferred← citeshttps://doi.org/10.1063/5.0022118openalex-snapshot
Influence of ALD Ru bottom electrode on ferroelectric properties of Hf0.5Zr0.5O2-based capacitors
inferred← citeshttps://doi.org/10.1063/5.0026136openalex-snapshot
Comparison of the evolution of internal bias field of doped hafnia ferroelectric capacitors for the field-cycling reliability
inferred← citeshttps://doi.org/10.1063/5.0028200openalex-snapshot
Improvement of remanent polarization of CeO2–HfO2 solid solution thin films on Si substrates by chemical solution deposition
inferred← citeshttps://doi.org/10.1063/5.0028798openalex-snapshot
A perspective on electrode engineering in ultrathin ferroelectric heterostructures for enhanced tunneling electroresistance
inferred← citeshttps://doi.org/10.1063/5.0035515openalex-snapshot
Ferroelectric field effect transistors: Progress and perspective
inferred← citeshttps://doi.org/10.1063/5.0035542openalex-snapshot
A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective
inferred← citeshttps://doi.org/10.1063/5.0035650openalex-snapshot
Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors
inferred← citeshttps://doi.org/10.1063/5.0035652openalex-snapshot
Perspective on the switching behavior of HfO2-based ferroelectrics
inferred← citeshttps://doi.org/10.1063/5.0037617openalex-snapshot
Next generation ferroelectric materials for semiconductor process integration and their applications
inferred← citeshttps://doi.org/10.1063/5.0039446openalex-snapshot
Effect of annealing temperature on switching properties in Si-doped HfO2 films
inferred← citeshttps://doi.org/10.1063/5.0047104openalex-snapshot
Investigation of the wake-up process and time-dependent imprint of Hf0.5Zr0.5O2 film through the direct piezoelectric response
inferred← citeshttps://doi.org/10.1063/5.0050748openalex-snapshot
Bipolar conductivity in ferroelectric La:HfZrO films
inferred← citeshttps://doi.org/10.1063/5.0057188openalex-snapshot
Dynamic imprint recovery as an origin of the pulse width dependence of retention in Hf0.5Zr0.5O2-based capacitors
inferred← citeshttps://doi.org/10.1063/5.0066169openalex-snapshot
Systematic studies of the effects of group-III dopants (La, Y, Al, and Gd) in Hf0.5Zr0.5O2 ferroelectrics by ab initio simulations
inferred← citeshttps://doi.org/10.1063/5.0066607openalex-snapshot
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
inferred← citeshttps://doi.org/10.1063/5.0084660openalex-snapshot
Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2
inferred← citeshttps://doi.org/10.1063/5.0127136openalex-snapshot
Physical origin of the endurance improvement for HfO2-ZrO2 superlattice ferroelectric film
inferred← citeshttps://doi.org/10.1063/5.0131355openalex-snapshot
High endurance ( > 1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM
inferred← citeshttps://doi.org/10.1063/5.0143588openalex-snapshot
Electron beam-induced current imaging of ferroelectric domains and local polarization reversal in Hf0.5Zr0.5O2
inferred← citeshttps://doi.org/10.1063/5.0144958openalex-snapshot
Flexoelectricity-stabilized ferroelectric phase with enhanced reliability in ultrathin La:HfO2 films
inferred← citeshttps://doi.org/10.1063/5.0148068openalex-snapshot
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
inferred← citeshttps://doi.org/10.1063/5.0152821openalex-snapshot
Exceptional high temperature retention in Al0.93B0.07N films
inferred← citeshttps://doi.org/10.1063/5.0162799openalex-snapshot
Morphological and electrical studies of Hf0.5Zr0.5O2 electroceramics
inferred← citeshttps://doi.org/10.1063/5.0170657openalex-snapshot
Regulating ferroelectricity in Hf0.5Zr0.5O2 thin films: Exploring the combined impact of oxygen vacancy and electrode stresses
inferred← citeshttps://doi.org/10.1063/5.0175439openalex-snapshot
Fluorite-structured antiferroelectric hafnium-zirconium oxide for emerging nonvolatile memory and neuromorphic-computing applications
inferred← citeshttps://doi.org/10.1063/5.0175930openalex-snapshot
Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films
inferred← citeshttps://doi.org/10.1063/5.0194207openalex-snapshot
Improving the endurance for ferroelectric Hf0.5Zr0.5O2 thin films by interface and defect engineering
inferred← citeshttps://doi.org/10.1063/5.0194409openalex-snapshot
Polarization switching pathways of ferroelectric Zr-doped HfO2 based on the first-principles calculation
inferred← citeshttps://doi.org/10.1063/5.0200154openalex-snapshot
Low oxidation conditions in pulsed laser deposition enhance polarization without degradation of endurance and retention in Hf0.5Zr0.5O2 films
inferred← citeshttps://doi.org/10.1063/5.0207501openalex-snapshot
Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories
inferred← citeshttps://doi.org/10.1063/5.0214873openalex-snapshot
Crystalline phase control of ferroelectric HfO2 thin film via heterogeneous co-doping
inferred← citeshttps://doi.org/10.1063/5.0218240openalex-snapshot
Limits of high-frequency polarization switching in BaTiO3
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