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Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/adfm.200500050openalex-snapshot
Martensitic Phase Transformation of Isolated HfO 2 , ZrO 2 , and Hf x Zr 1 – x O 2 (0 < x < 1) Nanocrystals
inferredcites →https://doi.org/10.1002/adfm.201103119openalex-snapshot
Incipient Ferroelectricity in Al‐Doped HfO 2 Thin Films
inferredcites →https://doi.org/10.1007/1-4020-4367-8openalex-snapshot
Defects in High-k Gate Dielectric Stacks
inferredcites →https://doi.org/10.1016/0368-2048(95)02666-5openalex-snapshot
Surface characterization of plasma deposited organic thin films
inferredcites →https://doi.org/10.1016/0375-9601(85)90777-7openalex-snapshot
Oxygen K-edge absorption spectra of O2, CO and CO2
inferredcites →https://doi.org/10.1016/0921-4526(94)00826-hopenalex-snapshot
The UWXAFS analysis package: philosophy and details
inferredcites →https://doi.org/10.1021/cm071740aopenalex-snapshot
Insights into Crystalline Preorganization of Gas-Phase Precursors: Densification Mechanisms
inferredcites →https://doi.org/10.1021/cm100900kopenalex-snapshot
Improved Growth and Electrical Properties of Atomic-Layer-Deposited Metal-Oxide Film by Discrete Feeding Method of Metal Precursor
inferredcites →https://doi.org/10.1021/cm1010289openalex-snapshot
Permittivity Enhanced Atomic Layer Deposited HfO2 Thin Films Manipulated by a Rutile TiO2 Interlayer
inferredcites →https://doi.org/10.1021/ja801616uopenalex-snapshot
Atomic Layer Deposition of Hafnium Oxide from Hafnium Chloride and Water
inferredcites →https://doi.org/10.1038/nnano.2009.456openalex-snapshot
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
inferredcites →https://doi.org/10.1039/c1jm11763gopenalex-snapshot
Atomic layer deposited HfO2 and HfO2/TiO2 bi-layer films using a heteroleptic Hf-precursor for logic and memory applications
inferredcites →https://doi.org/10.1063/1.1361065openalex-snapshot
High-κ gate dielectrics: Current status and materials properties considerations
inferredcites →https://doi.org/10.1063/1.1458692openalex-snapshot
Thermodynamic stability of high- K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
inferredcites →https://doi.org/10.1063/1.1534381openalex-snapshot
Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition
inferredcites →https://doi.org/10.1063/1.1823584openalex-snapshot
Effective masses and complex dielectric function of cubic HfO2
inferredcites →https://doi.org/10.1063/1.1829773openalex-snapshot
Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor
inferredcites →https://doi.org/10.1063/1.1856140openalex-snapshot
Control of silicidation in HfO2∕Si(100) interfaces
inferredcites →https://doi.org/10.1063/1.1947389openalex-snapshot
Physical and electrical characteristics of atomic-layer-deposited hafnium dioxide formed using hafnium tetrachloride and tetrakis(ethylmethylaminohafnium)
inferredcites →https://doi.org/10.1063/1.2193163openalex-snapshot
Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors
inferredcites →https://doi.org/10.1063/1.2201050openalex-snapshot
Role of oxygen vacancy in HfO2∕SiO2∕Si(100) interfaces
inferredcites →https://doi.org/10.1063/1.2410214openalex-snapshot
Bond nature of oxygen-deficient HfO2∕Si(100) film
inferredcites →https://doi.org/10.1063/1.2716399openalex-snapshot
Hafnium zirconate gate dielectric for advanced gate stack applications
inferredcites →https://doi.org/10.1063/1.2735945openalex-snapshot
Effects of carbon residue in atomic layer deposited HfO2 films on their time-dependent dielectric breakdown reliability
inferredcites →https://doi.org/10.1063/1.3184577openalex-snapshot
Improved thermal stability, interface, and electrical properties of HfO2 films prepared by pulsed laser deposition using in situ ionized nitrogen
inferredcites →https://doi.org/10.1063/1.3275738openalex-snapshot
Spectroscopic evidence for limited carrier hopping interaction in amorphous ZnO thin film
inferredcites →https://doi.org/10.1063/1.3497077openalex-snapshot
Monocliniclike local atomic structure in amorphous ZrO2 thin film
inferredcites →https://doi.org/10.1063/1.3634052openalex-snapshot
Ferroelectricity in hafnium oxide thin films
inferredcites →https://doi.org/10.1063/1.3658396openalex-snapshot
Evidence of interface conversion and electrical characteristics improvement of ultra-thin HfTiO films upon rapid thermal annealing
inferredcites →https://doi.org/10.1103/physrevb.65.233106openalex-snapshot
First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide
inferredcites →https://doi.org/10.1103/physrevb.69.245102openalex-snapshot
Electronic structure of titania aerogels from soft x-ray absorption spectroscopy
inferredcites →https://doi.org/10.1103/physrevb.76.165411openalex-snapshot
Influence of oxygen vacancies on the electronic structure of HfO2 films
inferredcites →https://doi.org/10.1103/physrevb.78.012102openalex-snapshot
First-principles study on doping and phase stability of HfO2
inferredcites →https://doi.org/10.1103/physrevb.78.132102openalex-snapshot
Structural disorders in an amorphous HfO2 film probed by x-ray absorption fine structure analysis
inferredcites →https://doi.org/10.1103/physrevb.82.094104openalex-snapshot
Structural properties and electronic structure of HfO 2 -ZrO 2 composite films
inferredcites →https://doi.org/10.1103/physrevlett.92.057601openalex-snapshot
Bonding, Energies, and Band Offsets of Si−ZrO2 and HfO2 Gate Oxide Interfaces
inferredcites →https://doi.org/10.1109/tdmr.2005.845236openalex-snapshot
Review on high-k dielectrics reliability issues
inferredcites →https://doi.org/10.1109/ted.2007.892024openalex-snapshot
Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited Layers
inferredcites →https://doi.org/10.1149/1.1554729openalex-snapshot
HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium
inferredcites →https://doi.org/10.1149/1.3098978openalex-snapshot
Reduced Electrical Defects and Improved Reliability of Atomic-Layer-Deposited HfO[sub 2] Dielectric Films by In Situ NH[sub 3] Injection
inferredcites →https://doi.org/10.1149/1.3430657openalex-snapshot
Reduced Metal Contamination in Atomic-Layer-Deposited HfO[sub 2] Films Grown on Si Using O[sub 3] Oxidant Generated Without N[sub 2] Assistance
inferredcites →https://doi.org/10.1149/1.3551460openalex-snapshot
The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics
inferredcites →https://doi.org/10.1149/2.014204jesopenalex-snapshot
Properties of Atomic Layer Deposited HfO2Films on Ge Substrates Depending on Process Temperatures
inferredcites →https://doi.org/10.1149/2.020202jssopenalex-snapshot
The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2Films on Ge Substrate
inferredcites →https://doi.org/10.1557/jmr.2004.0072openalex-snapshot
Effect of deposition temperature on the characteristics of hafnium oxide films deposited by metalorganic chemical vapor deposition using amide precursor
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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ChemInform Abstract: Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition.
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Nature of chemical states of sulfur embedded in atomic-layer-deposited HfO2film on Ge substrate for interface passivation
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Fluorite-structure antiferroelectrics
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Phase coexistence in Y - and La -doped Hf 0.5 Zr 0.5 O 2 thin films and its effect on the electrical properties in functional capacitors
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Stabilization of Competing Ferroelectric Phases of HfO2 under Epitaxial Strain
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Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack
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Ferroelectricity of Hf0.5Zr0.5O2 Thin Film Induced at 350°C by Thermally Accelerated Nucleation During Atomic Layer Deposition
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Phase control of HfO2-based dielectric films for higher-k materials
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Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
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Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
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Annealing modulated microstructural and electrical properties of plasma-enhanced atomic layer deposition-derived HfO2/SiO2 nanolaminates on AlGaN/GaN
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Role of a cyclopentadienyl ligand in Hf precursors using H2O or O3 as oxidant in atomic layer deposition
inferred← citeshttps://doi.org/10.1149/2.020405jssopenalex-snapshot
Cyclic Plasma Treatment during ALD Hf1-xZrxO2Deposition
inferred← citeshttps://doi.org/10.1149/2162-8777/ac6f1copenalex-snapshot
Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes
inferred← citeshttps://doi.org/10.1186/s11671-020-03301-4openalex-snapshot
A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
inferred← citeshttps://doi.org/10.1557/jmr.2019.335openalex-snapshot
Recent advances in the understanding of high-kdielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications
inferred← citeshttps://doi.org/10.20517/microstructures.2025.169openalex-snapshot
Stoichiometry- and lattice-tunable MoNx as a novel electrode platform for ferroelectric Hf0.5Zr0.5O2 capacitors
inferred← citeshttps://doi.org/10.3390/ma13092008openalex-snapshot
Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition
inferred← citeshttps://doi.org/10.3390/ma18153547openalex-snapshot
Fabrication and Characterization of Ferroelectric Capacitors with a Symmetric Hybrid TiN/W/HZO/W/TiN Electrode Structure
inferred← citeshttps://doi.org/10.35848/1347-4065/ab86deopenalex-snapshot
Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application
inferred← citeshttps://doi.org/10.35848/1347-4065/ac468bopenalex-snapshot
Cerium oxide capping on Y-doped HfO 2 films for ferroelectric phase stabilization with endurance improvement
inferred← citeshttps://doi.org/10.35848/1882-0786/abebf4openalex-snapshot
Thermal stability of ferroelectricity in hafnium–zirconium dioxide films deposited by sputtering and chemical solution deposition for oxide-channel ferroelectric-gate transistor applications
inferred← citeshttps://doi.org/10.48550/arxiv.2101.04886openalex-snapshot
Large remnant polarization in a wake-up free Hf0.5Zr0.5O2 ferroelectric film
inferred← citeshttps://doi.org/10.6084/m9.figshare.12096999openalex-snapshot
Additional file 1 of A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
inferred← citeshttps://doi.org/10.7567/1347-4065/ab38d8openalex-snapshot
Mist chemical vapor deposition study of 20 and 100 nm thick undoped ferroelectric hafnium oxide films on n + -Si(100) substrates
inferred← citeshttps://doi.org/10.7567/1347-4065/ab45e3openalex-snapshot
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
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