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Perspective on the switching behavior of HfO2-based ferroelectrics

https://doi.org/10.1063/5.0035652
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Outgoing claims: the papers this work cites, builds on, or argues with.

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Physical Mechanisms behind the Field‐Cycling Behavior of HfO 2 ‐Based Ferroelectric Capacitors
inferredcites →https://doi.org/10.1002/adfm.201602869openalex-snapshot
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO 2
inferredcites →https://doi.org/10.1002/adfm.202005876openalex-snapshot
Giant Domain Wall Conductivity in Self‐Assembled BiFeO3 Nanocrystals
inferredcites →https://doi.org/10.1002/adma.201203101openalex-snapshot
Active Control of Ferroelectric Switching Using Defect‐Dipole Engineering
inferredcites →https://doi.org/10.1002/adma.201403115openalex-snapshot
Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric
inferredcites →https://doi.org/10.1002/adma.201404531openalex-snapshot
Ferroelectricity and Antiferroelectricity of Doped Thin HfO 2 ‐Based Films
inferredcites →https://doi.org/10.1002/aelm.201600173openalex-snapshot
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO 2 Thin Films
inferredcites →https://doi.org/10.1002/aenm.201803949openalex-snapshot
Fatigue‐Free and Bending‐Endurable Flexible Mn‐Doped Na0.5Bi0.5TiO3‐BaTiO3‐BiFeO3 Film Capacitor with an Ultrahigh Energy Storage Performance
inferredcites →https://doi.org/10.1007/978-3-540-34591-6_1openalex-snapshot
Modern Physics of Ferroelectrics: Essential Background
inferredcites →https://doi.org/10.1016/j.actamat.2015.07.035openalex-snapshot
Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films
inferredcites →https://doi.org/10.1016/j.actamat.2018.05.033openalex-snapshot
Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction
inferredcites →https://doi.org/10.1016/j.actamat.2018.07.018openalex-snapshot
Revealing the sequence of switching mechanisms in polycrystalline ferroelectric/ferroelastic materials
inferredcites →https://doi.org/10.1016/j.cap.2016.12.012openalex-snapshot
Non-piezoelectric effects in piezoresponse force microscopy
inferredcites →https://doi.org/10.1016/j.cap.2018.12.017openalex-snapshot
Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film
inferredcites →https://doi.org/10.1016/j.ceramint.2019.07.297openalex-snapshot
Film thickness-dependent ferroelectric polarization switching dynamics of undoped HfO2 thin films prepared by atomic layer deposition
inferredcites →https://doi.org/10.1016/j.jallcom.2019.153628openalex-snapshot
Possible electrochemical origin of ferroelectricity in HfO2 thin films
inferredcites →https://doi.org/10.1021/acs.nanolett.8b04326openalex-snapshot
First Observation of Ferroelectricity in ∼1 nm Ultrathin Semiconducting BaTiO3 Films
inferredcites →https://doi.org/10.1021/acsaelm.8b00046openalex-snapshot
Wake-Up in a Hf 0.5 Zr 0.5 O 2 Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching
inferredcites →https://doi.org/10.1021/acsaelm.9b00367openalex-snapshot
Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films
inferredcites →https://doi.org/10.1021/acsami.0c03570openalex-snapshot
Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films
inferredcites →https://doi.org/10.1021/acsami.5b05773openalex-snapshot
Complex Internal Bias Fields in Ferroelectric Hafnium Oxide
inferredcites →https://doi.org/10.1021/acsami.7b15110openalex-snapshot
Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films
inferredcites →https://doi.org/10.1021/acsami.7b17482openalex-snapshot
Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations
inferredcites →https://doi.org/10.1021/acsami.8b08967openalex-snapshot
Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
inferredcites →https://doi.org/10.1021/acsami.8b11681openalex-snapshot
Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2
inferredcites →https://doi.org/10.1021/acsami.8b13173openalex-snapshot
Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films
inferredcites →https://doi.org/10.1021/acsami.8b18762openalex-snapshot
Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance
inferredcites →https://doi.org/10.1021/acsami.8b19558openalex-snapshot
Origin of Ferroelectricity in Epitaxial Si-Doped HfO2 Films
inferredcites →https://doi.org/10.1021/acsami.9b01464openalex-snapshot
Flexible, Temperature-Resistant, and Fatigue-Free Ferroelectric Memory Based on Bi(Fe 0.93 Mn 0.05 Ti 0.02 )O 3 Thin Film
inferredcites →https://doi.org/10.1021/am504837ropenalex-snapshot
Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide
inferredcites →https://doi.org/10.1021/nl302049kopenalex-snapshot
Ferroelectricity in Simple Binary ZrO 2 and HfO 2
inferredcites →https://doi.org/10.1021/nl9038339openalex-snapshot
Non-Kolmogorov−Avrami−Ishibashi Switching Dynamics in Nanoscale Ferroelectric Capacitors
inferredcites →https://doi.org/10.1021/nn203831hopenalex-snapshot
First-Order Reversal Curve Probing of Spatially Resolved Polarization Switching Dynamics in Ferroelectric Nanocapacitors
inferredcites →https://doi.org/10.1038/ncomms13807openalex-snapshot
The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals
inferredcites →https://doi.org/10.1038/nmat5028openalex-snapshot
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories
inferredcites →https://doi.org/10.1038/s41467-018-06717-wopenalex-snapshot
Physical reality of the Preisach model for organic ferroelectrics
inferredcites →https://doi.org/10.1038/s41467-018-07363-yopenalex-snapshot
Frequency-dependent decoupling of domain-wall motion and lattice strain in bismuth ferrite
inferredcites →https://doi.org/10.1038/s41563-018-0196-0openalex-snapshot
A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
inferredcites →https://doi.org/10.1038/s41586-018-0854-zopenalex-snapshot
Unveiling the double-well energy landscape in a ferroelectric layer
inferredcites →https://doi.org/10.1038/s41928-019-0305-3openalex-snapshot
An ultrathin integrated nanoelectromechanical transducer based on hafnium zirconium oxide
inferredcites →https://doi.org/10.1038/srep32931openalex-snapshot
The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film
inferredcites →https://doi.org/10.1039/c5nr05339kopenalex-snapshot
A study on the wake-up effect of ferroelectric Hf 0.5 Zr 0.5 O 2 films by pulse-switching measurement
inferredcites →https://doi.org/10.1039/c6cp03835bopenalex-snapshot
True ferroelectric switching in thin films of trialkylbenzene-1,3,5-tricarboxamide (BTA)
inferredcites →https://doi.org/10.1039/c7tc01200dopenalex-snapshot
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants
inferredcites →https://doi.org/10.1039/c8nr07135gopenalex-snapshot
Mimicking biological neurons with a nanoscale ferroelectric transistor
inferredcites →https://doi.org/10.1039/c8tc02941eopenalex-snapshot
Epitaxial ferroelectric Hf 0.5 Zr 0.5 O 2 thin film on a buffered YSZ substrate through interface reaction
inferredcites →https://doi.org/10.1039/d0nr02204gopenalex-snapshot
High polarization, endurance and retention in sub-5 nm Hf 0.5 Zr 0.5 O 2 films
inferredcites →https://doi.org/10.1051/mmnp/2019051openalex-snapshot
Preisach based storage devices and global optimizers
inferredcites →https://doi.org/10.1063/1.1381542openalex-snapshot
Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features
inferredcites →https://doi.org/10.1063/1.1636528openalex-snapshot
Stretched exponential relaxation in perovskite ferroelectrics after cyclic loading
inferredcites →https://doi.org/10.1063/1.1644917openalex-snapshot
Ultrafast polarization switching in thin-film ferroelectrics
inferredcites →https://doi.org/10.1063/1.1750631openalex-snapshot
Kinetics of Phase Change. II Transformation-Time Relations for Random Distribution of Nuclei
inferredcites →https://doi.org/10.1063/1.1801679openalex-snapshot
Effect of thermal annealing on switching dynamics of fatigued bulk lead zirconate titanate
inferredcites →https://doi.org/10.1063/1.3056603openalex-snapshot
Polarization fatigue in ferroelectric thin films and related materials
inferredcites →https://doi.org/10.1063/1.3380844openalex-snapshot
Experimental and theoretical investigation on polarization reversal in unfatigued lead-zirconate-titanate ceramic
inferredcites →https://doi.org/10.1063/1.3452326openalex-snapshot
Effect of bipolar electric fatigue on polarization switching in lead-zirconate-titanate ceramics
inferredcites →https://doi.org/10.1063/1.3500428openalex-snapshot
Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics
inferredcites →https://doi.org/10.1063/1.3634052openalex-snapshot
Ferroelectricity in hafnium oxide thin films
inferredcites →https://doi.org/10.1063/1.368219openalex-snapshot
The simulation of switching in polycrystalline ferroelectric ceramics
inferredcites →https://doi.org/10.1063/1.4739721openalex-snapshot
De-aging of Fe-doped lead-zirconate-titanate ceramics by electric field cycling: 180°- vs. non-180° domain wall processes
inferredcites →https://doi.org/10.1063/1.4811483openalex-snapshot
Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
inferredcites →https://doi.org/10.1063/1.4829064openalex-snapshot
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
inferredcites →https://doi.org/10.1063/1.4867975openalex-snapshot
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
inferredcites →https://doi.org/10.1063/1.4916707openalex-snapshot
The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
inferredcites →https://doi.org/10.1063/1.4916715openalex-snapshot
TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
inferredcites →https://doi.org/10.1063/1.4922272openalex-snapshot
Ferroelectricity in undoped hafnium oxide
inferredcites →https://doi.org/10.1063/1.4927805openalex-snapshot
Stabilizing the ferroelectric phase in doped hafnium oxide
inferredcites →https://doi.org/10.1063/1.4940370openalex-snapshot
Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
inferredcites →https://doi.org/10.1063/1.4960691openalex-snapshot
Fatigue effect on polarization switching dynamics in polycrystalline bulk ferroelectrics
inferredcites →https://doi.org/10.1063/1.4981893openalex-snapshot
Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO2
inferredcites →https://doi.org/10.1063/1.5010207openalex-snapshot
Nucleation limited switching (NLS) model for HfO2-based metal-ferroelectric-metal (MFM) capacitors: Switching kinetics and retention characteristics
inferredcites →https://doi.org/10.1063/1.5030072openalex-snapshot
Ferroelectric negative capacitance domain dynamics
inferredcites →https://doi.org/10.1063/1.5030562openalex-snapshot
Nanoscopic studies of domain structure dynamics in ferroelectric La:HfO2 capacitors
inferredcites →https://doi.org/10.1063/1.5041715openalex-snapshot
Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
inferredcites →https://doi.org/10.1063/1.5054747openalex-snapshot
Real-time switching dynamics of ferroelectric tunnel junctions under single-shot voltage pulses
inferredcites →https://doi.org/10.1063/1.5092707openalex-snapshot
Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO
inferredcites →https://doi.org/10.1063/1.5093793openalex-snapshot
Switching dynamics of ferroelectric HfO2-ZrO2 with various ZrO2 contents
inferredcites →https://doi.org/10.1063/1.5097880openalex-snapshot
Ferroelectricity in YO1.5-HfO2 films around 1 μm in thickness
inferredcites →https://doi.org/10.1063/5.0002235openalex-snapshot
Poling-induced inverse time-dependent microstrain mechanisms and post-poling relaxation in bismuth ferrite
inferredcites →https://doi.org/10.1080/00150198908217582openalex-snapshot
Phenomenological theory of domain walls
inferredcites →https://doi.org/10.1088/0022-3727/45/16/165301openalex-snapshot
Polarization switching dynamics by inhomogeneous field mechanism in ferroelectric polymers
inferredcites →https://doi.org/10.1088/0034-4885/73/5/056502openalex-snapshot
Local polarization dynamics in ferroelectric materials
inferredcites →https://doi.org/10.1088/1674-4926/37/8/084006openalex-snapshot
Ferroelectricity-modulated resistive switching in Pt/Si:HfO2/HfO2−x/Pt memory
inferredcites →https://doi.org/10.1103/physrev.116.61openalex-snapshot
Switching Mechanism in Triglycine Sulfate and Other Ferroelectrics
inferredcites →https://doi.org/10.1103/physrevb.66.214109openalex-snapshot
Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films
inferredcites →https://doi.org/10.1103/physrevlett.125.067601openalex-snapshot
Toward Intrinsic Ferroelectric Switching in Multiferroic BiFeO3
inferredcites →https://doi.org/10.1103/physrevlett.97.177601openalex-snapshot
Local Phase Decomposition as a Cause of Polarization Fatigue in Ferroelectric Thin Films
inferredcites →https://doi.org/10.1103/physrevlett.99.267602openalex-snapshot
Domain Switching Kinetics in Disordered Ferroelectric Thin Films
inferredcites →https://doi.org/10.1109/iedm.2017.8268424openalex-snapshot
Engineering of ferroelectric switching speed in Si doped HfO2 for high-speed 1T-FERAM application
inferredcites →https://doi.org/10.1109/iedm.2018.8614540openalex-snapshot
Role of Oxygen Vacancies in Electric Field Cycling Behaviors of Ferroelectric Hafnium Oxide
inferredcites →https://doi.org/10.1109/led.2012.2204856openalex-snapshot
Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors
inferredcites →https://doi.org/10.1109/led.2018.2872124openalex-snapshot
Switching Dynamics of Ferroelectric Zr-Doped HfO2
inferredcites →https://doi.org/10.1109/led.2018.2889412openalex-snapshot
Recovery of Cycling Endurance Failure in Ferroelectric FETs by Self-Heating
inferredcites →https://doi.org/10.1109/snw50361.2020.9131420openalex-snapshot
Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays
inferredcites →https://doi.org/10.1109/ted.2019.2922268openalex-snapshot
Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors
inferredcites →https://doi.org/10.1109/vlsit.2018.8510652openalex-snapshot
First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs
inferredcites →https://doi.org/10.1116/1.5110621openalex-snapshot
Polarization switching kinetics of the ferroelectric Al-doped HfO2 thin films prepared by atomic layer deposition with different ozone doses
inferredcites →https://doi.org/10.1126/science.aba0067openalex-snapshot
Scale-free ferroelectricity induced by flat phonon bands in HfO 2
inferredcites →https://doi.org/10.1126/science.abd1212openalex-snapshot
A key piece of the ferroelectric hafnia puzzle
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Calculation of polarization and bound charge density inside a dielectric material in triboelectric nanogenerators: Analytical and numerical study
inferredcites →https://doi.org/10.1142/s2010135x16300036openalex-snapshot
Ferroelectric HfO2-based materials for next-generation ferroelectric memories
inferredcites →https://doi.org/10.1143/jjap.39.l1259openalex-snapshot
Defect Control for Large Remanent Polarization in Bismuth Titanate Ferroelectrics –Doping Effect of Higher-Valent Cations–
inferredcites →https://doi.org/10.48550/arxiv.1904.05648openalex-snapshot
Atomically Engineered Hf0.5Zr0.5O2 Integrated Nano-Electromechanical Transducers
inferredcites →https://doi.org/10.7567/jjap.53.08le02openalex-snapshot
Impact of different dopants on the switching properties of ferroelectric hafniumoxide

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Precise Control of Charge Injection, Fatigue, Wake-Up and Break-Down in Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Memories
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Wake‐Up and Fatigue under Electrical Cycling in HfO 2 ‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices
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Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
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Leakage mechanism in ferroelectric Hf0.5Zr0.5O2 epitaxial thin films
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Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric Transistors
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Deep learning for exploring ultra-thin ferroelectrics with highly improved sensitivity of piezoresponse force microscopy
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Vibrational fingerprints of ferroelectric HfO2
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Oxygen-controlled IGZO channel deposition for enhanced memory window in ferroelectric FETs
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Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2 -based ferroelectrics
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Differentiating the origins of local charge transfer in oxides and hybrid halides by accumulating charge
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Room temperature ferroelectricity and an electrically tunable Berry curvature dipole in III–V monolayers
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Ferroelectric memristors optimized in thickness for short-term memory-driven reservoir computing
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Domains and domain walls in ferroic materials
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Dynamic scaling properties of multistep polarization response in ferroelectrics
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Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories
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Insights into oxygen vacancy dynamics in HfO2–ZrO2 superlattice ferroelectric films: Implications for device reliability
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Harnessing room-temperature ferroelectricity in metal oxide monolayers for advanced logic devices
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Inhomogeneity-facilitated application of ferroelectric barium titanate thin films in artificial neuromorphic system
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Nucleation mechanism of multiple-order parameter ferroelectric domain wall motion in hafnia
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A grease for domain walls motion in HfO 2 -based ferroelectrics
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Evolution of coercive voltage in a ferroelectric memory cell based on Hf 0.5 Zr 0.5 O 2 during its lifetime
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Multistep stochastic mechanism of polarization reversal in orthorhombic ferroelectrics
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Statistical correlations of random polarization and electric depolarization fields in ferroelectrics
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Domain Wall Reactions in Multiple-Order Parameter Ferroelectrics
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Understanding of polarization switching of ferroelectric HfO 2 in the multidomain structure
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Novel Asymmetric Operation Scheme for HfO2-Based FeRAM Based on Reconstruction of Ferroelectric Dynamics Impacts
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The Rise of Ferroelectricity at Nanoscale: Nanoelectronics is rediscovering the ferroelectricity
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Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment
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Effect of a ZrO2 Seed Layer on an Hf0.5Zr0.5O2 Ferroelectric Device Fabricated via Plasma Enhanced Atomic Layer Deposition
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Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO2 Ferroelectric Capacitor
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Linear electro-optic effect in ferroelectric HfO 2 -based epitaxial thin films
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Influence of orientation on the electro-optic effect in epitaxial Y-doped HfO 2 ferroelectric thin films
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