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Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations

https://doi.org/10.1021/acsami.7b17482
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adfm.201103119openalex-snapshot
Incipient Ferroelectricity in Al‐Doped HfO 2 Thin Films
inferredcites →https://doi.org/10.1002/adfm.201600590openalex-snapshot
Physical Mechanisms behind the Field‐Cycling Behavior of HfO 2 ‐Based Ferroelectric Capacitors
inferredcites →https://doi.org/10.1002/adma.201403115openalex-snapshot
Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric
inferredcites →https://doi.org/10.1002/adma.201404531openalex-snapshot
Ferroelectricity and Antiferroelectricity of Doped Thin HfO 2 ‐Based Films
inferredcites →https://doi.org/10.1002/aelm.201600173openalex-snapshot
Structural Changes Underlying Field‐Cycling Phenomena in Ferroelectric HfO 2 Thin Films
inferredcites →https://doi.org/10.1002/aelm.201600505openalex-snapshot
Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics
inferredcites →https://doi.org/10.1002/aelm.201700131openalex-snapshot
Si Doped Hafnium Oxide—A “Fragile” Ferroelectric System
inferredcites →https://doi.org/10.1007/978-1-4614-8054-9openalex-snapshot
Atomic Layer Deposition for Semiconductors
inferredcites →https://doi.org/10.1016/j.mee.2015.04.024openalex-snapshot
Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films
inferredcites →https://doi.org/10.1016/j.mee.2017.05.028openalex-snapshot
Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si
inferredcites →https://doi.org/10.1021/acsami.5b05773openalex-snapshot
Complex Internal Bias Fields in Ferroelectric Hafnium Oxide
inferredcites →https://doi.org/10.1021/acsnano.5b02227openalex-snapshot
Differentiating Ferroelectric and Nonferroelectric Electromechanical Effects with Scanning Probe Microscopy
inferredcites →https://doi.org/10.1021/am504837ropenalex-snapshot
Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide
inferredcites →https://doi.org/10.1038/srep41657openalex-snapshot
Electrostatic-free piezoresponse force microscopy
inferredcites →https://doi.org/10.1063/1.1623937openalex-snapshot
First-order reversal curves diagrams for the characterization of ferroelectric switching
inferredcites →https://doi.org/10.1063/1.1850652openalex-snapshot
Atomic force microscopy-based experimental setup for studying domain switching dynamics in ferroelectric capacitors
inferredcites →https://doi.org/10.1063/1.2905266openalex-snapshot
Imaging mechanism of piezoresponse force microscopy in capacitor structures
inferredcites →https://doi.org/10.1063/1.3634052openalex-snapshot
Ferroelectricity in hafnium oxide thin films
inferredcites →https://doi.org/10.1063/1.3636417openalex-snapshot
Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
inferredcites →https://doi.org/10.1063/1.370774openalex-snapshot
High resolution study of domain nucleation and growth during polarization switching in Pb(Zr,Ti)O3 ferroelectric thin film capacitors
inferredcites →https://doi.org/10.1063/1.4747209openalex-snapshot
Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties
inferredcites →https://doi.org/10.1063/1.4794865openalex-snapshot
Polarization relaxation kinetics in ultrathin ferroelectric capacitors
inferredcites →https://doi.org/10.1063/1.4829064openalex-snapshot
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
inferredcites →https://doi.org/10.1063/1.4867975openalex-snapshot
Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
inferredcites →https://doi.org/10.1063/1.4916707openalex-snapshot
The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model
inferredcites →https://doi.org/10.1063/1.4916715openalex-snapshot
TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
inferredcites →https://doi.org/10.1063/1.4919135openalex-snapshot
On the structural origins of ferroelectricity in HfO2 thin films
inferredcites →https://doi.org/10.1063/1.4953787openalex-snapshot
Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
inferredcites →https://doi.org/10.1063/1.4966219openalex-snapshot
Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties
inferredcites →https://doi.org/10.1063/1.4979015openalex-snapshot
Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale
inferredcites →https://doi.org/10.1063/1.4999291openalex-snapshot
Ferroelectric properties of lightly doped La:HfO2 thin films grown by plasma-assisted atomic layer deposition
inferredcites →https://doi.org/10.1088/0022-3727/44/46/464006openalex-snapshot
Band excitation in scanning probe microscopy: sines of change
inferredcites →https://doi.org/10.1088/0957-4484/18/43/435503openalex-snapshot
The band excitation method in scanning probe microscopy for rapid mapping of energy dissipation on the nanoscale
inferredcites →https://doi.org/10.1103/physrevb.90.064111openalex-snapshot
Pathways towards ferroelectricity in hafnia
inferredcites →https://doi.org/10.1109/essderc.2016.7599662openalex-snapshot
Impact of field cycling on HfO2 based non-volatile memory devices
inferredcites →https://doi.org/10.1149/07532.0107ecstopenalex-snapshot
Ferroelectric Switching Pathways and Energetics in (Hf,Zr)O2
inferredcites →https://doi.org/10.1149/ma2016-02/16/1481openalex-snapshot
Ferroelectric Switching Pathways and Energetics in (Hf,Zr)O2
inferredcites →https://doi.org/10.7567/jjap.53.08le02openalex-snapshot
Impact of different dopants on the switching properties of ferroelectric hafniumoxide

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4692701openalex-extracted
Precise Control of Charge Injection, Fatigue, Wake-Up and Break-Down in Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Memories
inferred← citeshttps://doi.org/10.1002/adem.202000791openalex-snapshot
Defect Engineering to Achieve Wake‐up Free HfO 2 ‐Based Ferroelectrics
inferred← citeshttps://doi.org/10.1002/adfm.202403864openalex-snapshot
Revealing the Role of Spacer Layer in Domain Dynamics of Hf 0.5 Zr 0.5 O 2 Thin Films for Ferroelectrics
inferred← citeshttps://doi.org/10.1002/adma.202415131openalex-snapshot
Unconventional Ferroelectric‐Ferroelastic Switching Mediated by Non‐Polar Phase in Fluorite Oxides
inferred← citeshttps://doi.org/10.1002/adma.202510930openalex-snapshot
Field‐Induced Structural Dynamics of Polarization Switching in Hf x Zr 1‐x O 2 Thin Films
inferred← citeshttps://doi.org/10.1002/pssa.202000819openalex-snapshot
Ferroelectric and Dielectric Properties of Hf0.5Zr0.5O2 Thin Film Near Morphotropic Phase Boundary
inferred← citeshttps://doi.org/10.1002/pssr.202000524openalex-snapshot
Ferroelectric, Analog Resistive Switching in Back‐End‐of‐Line Compatible TiN/HfZrO4/TiOx Junctions
inferred← citeshttps://doi.org/10.1002/pssr.202100082openalex-snapshot
Ferroelectric Hf0.5Zr0.5O2 Thin Films Crystallized by Pulsed Laser Annealing
inferred← citeshttps://doi.org/10.1002/pssr.202100485openalex-snapshot
Local Ga Ion Implantation as a Source of Diverse Ferroelectric Properties of Hafnium Oxide
inferred← citeshttps://doi.org/10.1002/smll.202107575openalex-snapshot
Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
inferred← citeshttps://doi.org/10.1007/s11837-018-3140-5openalex-snapshot
Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
inferred← citeshttps://doi.org/10.1016/j.actamat.2020.116515openalex-snapshot
Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices
inferred← citeshttps://doi.org/10.1016/j.actamat.2023.118707openalex-snapshot
Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction
inferred← citeshttps://doi.org/10.1016/j.actamat.2024.120590openalex-snapshot
Structural changes during wake-up and polarization switching in a ferroelectric Hf0.5Zr0.5O2 film
inferred← citeshttps://doi.org/10.1016/j.ceramint.2018.10.214openalex-snapshot
Regulating crystal structure and ferroelectricity in Sr doped HfO2 thin films fabricated by metallo-organic decomposition
inferred← citeshttps://doi.org/10.1016/j.matchar.2021.111114openalex-snapshot
Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films
inferred← citeshttps://doi.org/10.1016/j.mee.2022.111770openalex-snapshot
Impact of Annealing on Electric and Elastic Properties of 10-Nm Hf0.5zr0.5o2 Films Prepared on Si by Sputtering
inferred← citeshttps://doi.org/10.1016/j.mtla.2020.100919openalex-snapshot
Temperature dependent polarization-switching behavior in Hf0.5Zr0.5O2 ferroelectric film
inferred← citeshttps://doi.org/10.1016/j.surfin.2025.108169openalex-snapshot
Study on the role of TiN oxidation states to the Hafnium Zirconium Oxide interface chemistry
inferred← citeshttps://doi.org/10.1016/j.tsf.2019.03.031openalex-snapshot
Effect of furnace annealing on the ferroelectricity of Hf0.5 Zr0.5O2 thin films
inferred← citeshttps://doi.org/10.1017/s1431927621000040openalex-snapshot
Band Excitation Piezoresponse Force Microscopy Adapted for Weak Ferroelectrics: On-the-Fly Tuning of the Central Band Frequency
inferred← citeshttps://doi.org/10.1021/acsaelm.0c00671openalex-snapshot
Large Remnant Polarization in a Wake-Up Free Hf 0.5 Zr 0.5 O 2 Ferroelectric Film through Bulk and Interface Engineering
inferred← citeshttps://doi.org/10.1021/acsaelm.8b00046openalex-snapshot
Wake-Up in a Hf 0.5 Zr 0.5 O 2 Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching
inferred← citeshttps://doi.org/10.1021/acsaelm.9b00585openalex-snapshot
Direct Epitaxial Growth of Polar (1 – x )HfO2–( x )ZrO2 Ultrathin Films on Silicon
inferred← citeshttps://doi.org/10.1021/acsami.0c07809openalex-snapshot
Revealing Antiferroelectric Switching and Ferroelectric Wakeup in Hafnia by Advanced Piezoresponse Force Microscopy
inferred← citeshttps://doi.org/10.1021/acsami.0c16741openalex-snapshot
Nanoscale Tailoring of Ferroelectricity in a Thin Dielectric Film
inferred← citeshttps://doi.org/10.1021/acsami.2c22263openalex-snapshot
Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films
inferred← citeshttps://doi.org/10.1021/acsami.3c11141openalex-snapshot
Giant Electromechanical Effect in Piezoelectric Nanomembranes Based on Hf0.5Zr0.5O2
inferred← citeshttps://doi.org/10.1021/acsami.4c05798openalex-snapshot
Ferroelectric Al 0.85 Sc 0.15 N and Hf 0.5 Zr 0.5 O 2 Domain Switching Dynamics
inferred← citeshttps://doi.org/10.1021/acsami.4c10002openalex-snapshot
Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealing
inferred← citeshttps://doi.org/10.1021/acsami.8b07988openalex-snapshot
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1–x)O2 Ultrathin Capacitors
inferred← citeshttps://doi.org/10.1021/acsami.8b11681openalex-snapshot
Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2
inferred← citeshttps://doi.org/10.1021/acsami.8b13173openalex-snapshot
Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films
inferred← citeshttps://doi.org/10.1021/acsami.9b08189openalex-snapshot
Ferroelectric Second-Order Memristor
inferred← citeshttps://doi.org/10.1038/s41524-024-01487-0openalex-snapshot
Hybrid improper ferroelectricity in a Si-compatible CeO2/HfO2 artificial superlattice
inferred← citeshttps://doi.org/10.1039/c9tc06400aopenalex-snapshot
Obvious ferroelectricity in undoped HfO 2 films by chemical solution deposition
inferred← citeshttps://doi.org/10.1039/d1nr01260fopenalex-snapshot
Defects in ferroelectric HfO 2
inferred← citeshttps://doi.org/10.1039/d2nr02678copenalex-snapshot
A phase field model combined with a genetic algorithm for polycrystalline hafnium zirconium oxide ferroelectrics
inferred← citeshttps://doi.org/10.1039/d3na01115aopenalex-snapshot
Ultrafast and accurate prediction of polycrystalline hafnium oxide phase-field ferroelectric hysteresis using graph neural networks
inferred← citeshttps://doi.org/10.1039/d3nh00524kopenalex-snapshot
Physical reservoirs based on MoS 2 –HZO integrated ferroelectric field-effect transistors for reservoir computing systems
inferred← citeshttps://doi.org/10.1039/d3tc01145copenalex-snapshot
Vector piezoelectric response and ferroelectric domain formation in Hf 0.5 Zr 0.5 O 2 films
inferred← citeshttps://doi.org/10.1039/d4nr01124dopenalex-snapshot
Unravelling the nanoscale mechanism of polarization reversal in a Hf 0.5 Zr 0.5 O 2 -based ferroelectric capacitor by vector piezoresponse force microscopy
inferred← citeshttps://doi.org/10.1063/1.5041715openalex-snapshot
Robust ferroelectricity in epitaxial Hf1/2Zr1/2O2 thin films
inferred← citeshttps://doi.org/10.1063/1.5050700openalex-snapshot
Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping
inferred← citeshttps://doi.org/10.1063/1.5060676openalex-snapshot
Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique
inferred← citeshttps://doi.org/10.1063/1.5063757openalex-snapshot
Formation of polar phase in Fe-doped ZrO2 epitaxial thin films
inferred← citeshttps://doi.org/10.1063/1.5128502openalex-snapshot
Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface
inferred← citeshttps://doi.org/10.1063/5.0013487openalex-snapshot
Comparative studies on ferroelectric switching kinetics of sputtered Hf0.5Zr0.5O2 thin films with variations in film thickness and crystallinity
inferred← citeshttps://doi.org/10.1063/5.0035652openalex-snapshot
Perspective on the switching behavior of HfO2-based ferroelectrics
inferred← citeshttps://doi.org/10.1063/5.0035753openalex-snapshot
Nonlinear domain wall velocity in ferroelectric Si-doped HfO2 thin film capacitors
inferred← citeshttps://doi.org/10.1063/5.0066607openalex-snapshot
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
inferred← citeshttps://doi.org/10.1063/5.0102290openalex-snapshot
Flexible HfO2-based ferroelectric memristor
inferred← citeshttps://doi.org/10.1063/5.0143588openalex-snapshot
Electron beam-induced current imaging of ferroelectric domains and local polarization reversal in Hf0.5Zr0.5O2
inferred← citeshttps://doi.org/10.1063/5.0207501openalex-snapshot
Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories
inferred← citeshttps://doi.org/10.1063/5.0252663openalex-snapshot
Oxygen vacancy-induced monoclinic dead layers in ferroelectric HfO2 with metal electrodes
inferred← citeshttps://doi.org/10.1073/pnas.2419685122openalex-snapshot
Mapping of the full polarization switching pathways for HfO 2 and its implications
inferred← citeshttps://doi.org/10.1088/1361-6528/ab9cf7openalex-snapshot
Data retention and low voltage operation of Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 based ferroelectric tunnel junctions
inferred← citeshttps://doi.org/10.1088/1674-1056/ad498bopenalex-snapshot
Optimal parameter space for stabilizing the ferroelectric phase of Hf0.5Zr0.5O2 thin films under strain and electric fields
inferred← citeshttps://doi.org/10.1109/cstic61820.2024.10532032openalex-snapshot
Experimental Investigation of Polarization Switching Speed in Ferroelectric HfO2 for High-Speed and Low-Power Applications
inferred← citeshttps://doi.org/10.1109/esscirc53450.2021.9567870openalex-snapshot
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor
inferred← citeshttps://doi.org/10.1109/essderc53440.2021.9631767openalex-snapshot
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor
inferred← citeshttps://doi.org/10.1109/isaf51494.2022.9870121openalex-snapshot
Optimizing nucleation layers for the integration of ferroelectric HZO on CVD-grown graphene
inferred← citeshttps://doi.org/10.1109/ted.2022.3186869openalex-snapshot
Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal–Ferroelectric–Metal Capacitors
inferred← citeshttps://doi.org/10.1109/ted.2023.3324623openalex-snapshot
Multifrequency Retention Model of HfO 2 -Based FRAM
inferred← citeshttps://doi.org/10.1109/ted.2025.3576205openalex-snapshot
La-Doped HfZrOx Antiferroelectric Films Achieving 4.1-Å EOT and k = 67 With Enhanced Dielectric Stability for High-k Gate Dielectrics
inferred← citeshttps://doi.org/10.1126/sciadv.aea0750openalex-snapshot
Electrostriction-driven phase instability enables giant pseudo-piezoelectricity in Hf 0.5 Zr 0.5 O 2
inferred← citeshttps://doi.org/10.1126/science.adf6137openalex-snapshot
A stable rhombohedral phase in ferroelectric Hf(Zr) 1+ x O 2 capacitor with ultralow coercive field
inferred← citeshttps://doi.org/10.1134/s1027451025700582openalex-snapshot
Structural Evolution of Nanoscale Ferroelectric Hf0.5Zr0.5O2 Layers as a Result of Their Cyclic Electrical Stimulation
inferred← citeshttps://doi.org/10.1134/s1063739725600311openalex-snapshot
Ferroelectric Transistors: Operating Principles, Materials, and Applications
inferred← citeshttps://doi.org/10.1149/2162-8777/ab6b13openalex-snapshot
Effect of Forming Gas Furnace Annealing on the Ferroelectricity and Wake-Up Effect of Hf 0.5 Zr 0.5 O 2 Thin Films
inferred← citeshttps://doi.org/10.20517/microstructures.2021.11openalex-snapshot
Microstructural evolution and ferroelectricity in HfO2 films
inferred← citeshttps://doi.org/10.3390/nano10081576openalex-snapshot
Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges
inferred← citeshttps://doi.org/10.3390/nano12091483openalex-snapshot
Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2
inferred← citeshttps://doi.org/10.34133/research.0093openalex-snapshot
Domain Wall Evolution in Hf 0.5 Zr 0.5 O 2 Ferroelectrics under Field-Cycling Behavior
inferred← citeshttps://doi.org/10.48550/arxiv.2101.04886openalex-snapshot
Large remnant polarization in a wake-up free Hf0.5Zr0.5O2 ferroelectric film
inferred← citeshttps://doi.org/10.70675/c5d48499z0b69z4d4az99b9z45ed154aefdfopenalex-snapshot
Mémoires ferroélectriques non-volatiles à base de (Hf,Zr)O2 pour la nanoélectronique basse consommation
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