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Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/0031-8914(67)90062-6openalex-snapshot
Temperature dependence of the energy gap in semiconductors
inferredcites →https://doi.org/10.1016/j.jcrysgro.2017.01.041openalex-snapshot
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
inferredcites →https://doi.org/10.1021/acsphotonics.7b00938openalex-snapshot
Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
inferredcites →https://doi.org/10.1038/nphoton.2010.171openalex-snapshot
Mid-infrared photonics in silicon and germanium
inferredcites →https://doi.org/10.1038/nphoton.2014.321openalex-snapshot
Lasing in direct-bandgap GeSn alloy grown on Si
inferredcites →https://doi.org/10.1038/s41598-018-24018-6openalex-snapshot
Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
inferredcites →https://doi.org/10.1049/el.2015.0331openalex-snapshot
Si‐based Ge 0.9 Sn 0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm
inferredcites →https://doi.org/10.1063/1.3238327openalex-snapshot
Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications
inferredcites →https://doi.org/10.1063/1.3555439openalex-snapshot
Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.4757124openalex-snapshot
GeSn p-i-n detectors integrated on Si with up to 4% Sn
inferredcites →https://doi.org/10.1063/1.4800448openalex-snapshot
Photoconductivity of germanium tin alloys grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.4801957openalex-snapshot
High-responsivity GeSn short-wave infrared p-i-n photodetectors
inferredcites →https://doi.org/10.1063/1.4840135openalex-snapshot
GeSn-based p-i-n photodiodes with strained active layer on a Si wafer
inferredcites →https://doi.org/10.1063/1.4903540openalex-snapshot
Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff
inferredcites →https://doi.org/10.1063/1.4903881openalex-snapshot
GeSn p-i-n waveguide photodetectors on silicon substrates
inferredcites →https://doi.org/10.1063/1.4940194openalex-snapshot
GeSn p-i-n photodetectors with GeSn layer grown by magnetron sputtering epitaxy
inferredcites →https://doi.org/10.1063/1.4945816openalex-snapshot
Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination
inferredcites →https://doi.org/10.1063/1.4966141openalex-snapshot
An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K
inferredcites →https://doi.org/10.1063/1.4977878openalex-snapshot
Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors
inferredcites →https://doi.org/10.1063/1.5000353openalex-snapshot
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μ m up to 180 K
inferredcites →https://doi.org/10.1063/1.5020510openalex-snapshot
High performance Ge0.89Sn0.11 photodiodes for low-cost shortwave infrared imaging
inferredcites →https://doi.org/10.1088/1361-6641/32/2/025003openalex-snapshot
Molecular epitaxy of pseudomorphic Ge 1− y Sn y ( y = 0.06–0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge 4 H 10 and SnD 4
inferredcites →https://doi.org/10.1109/jphot.2016.2607687openalex-snapshot
Silicon Based GeSn p-i-n Photodetector for SWIR Detection
inferredcites →https://doi.org/10.1109/jqe.2010.2077273openalex-snapshot
High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon
inferredcites →https://doi.org/10.1109/led.2013.2278371openalex-snapshot
Current–Voltage Characteristics of GeSn/Ge Heterojunction Diodes Grown by Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1364/ao.55.010170openalex-snapshot
Ge_0975Sn_0025 320 × 256 imager chip for 16–19 μm infrared vision
inferredcites →https://doi.org/10.1364/oe.19.006400openalex-snapshot
GeSn p-i-n photodetector for all telecommunication bands detection
inferredcites →https://doi.org/10.1364/oe.20.027297openalex-snapshot
GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
inferredcites →https://doi.org/10.1364/oe.22.000839openalex-snapshot
GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz
inferredcites →https://doi.org/10.1364/oe.22.011029openalex-snapshot
Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1364/oe.22.015639openalex-snapshot
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
inferredcites →https://doi.org/10.1364/oe.22.026854openalex-snapshot
Novel integration technique for silicon/III-V hybrid laser
inferredcites →https://doi.org/10.1364/oe.23.018611openalex-snapshot
Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique
inferredcites →https://doi.org/10.1364/oe.24.004519openalex-snapshot
Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
inferredcites →https://doi.org/10.1364/oe.25.015818openalex-snapshot
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth
inferredcites →https://doi.org/10.1364/oe.25.018502openalex-snapshot
Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range
inferredcites →https://doi.org/10.1364/ol.39.004711openalex-snapshot
GeSn/Ge multiquantum well photodetectors on Si substrates
inferredcites →https://doi.org/10.1364/ol.42.001652openalex-snapshot
Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer
inferredcites →https://doi.org/10.1364/ol.43.004558openalex-snapshot
Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 223%
inferredcites →https://doi.org/10.1364/opn.27.1.000032openalex-snapshot
Group IV Photonics: Driving Integrated Optoelectronics
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Growth of Sigesn Compounds by Ion Implantation and Their Optical Properties
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All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors
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Band Alignment of Grafted Si/Ge 0.89 Sn 0.11 Heterojunction Determined by X‐Ray Photoelectron Spectroscopy
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Single‐Crystalline Ge1−xSnx/Si p–n Heterojunction Photodiodes with Sn Compositions up to 10%
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Black GeSn on Silicon for Enhanced Short‐Wave Infrared Detection and Imaging
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Uncooled GeSn MWIR Photodetectors Using Fully Relaxed Thin Triple‐Step Buffer
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High‐Performance N‐MoSe2/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection
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Mid‐Infrared Top‐Gated Ge0.82Sn0.18 Nanowire Phototransistors
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High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy
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Si‐Based GeSn Lateral p–i–n Waveguide Photodetectors Covering Entire Short‐Wave Infrared Band
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Enhancing Device Performance with High Electron Mobility GeSn Materials
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High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers
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Atomic‐Scale Mechanisms of Anisotropic Thermal Decomposition in GeSn Alloys With Stepwise Pinning
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High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect
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Design Optimization of GeSn‐Based Structures for Efficient Mid‐Infrared Surface Plasmon Polariton Excitation and Propagation via Grating Coupling
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Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering
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Study of the effect of temperature on the detectivity and sensitivity of GeSn-based heterojunction phototransistor for mid-wave infrared applications
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Degenerate Bulk n-Ge1-xSnx as an Alternative to Noble Metals for Supporting Surface Plasmon Polariton
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Bandgap Engineering and Impedance Spectroscopy Analysis of Linearly Graded Group IV Material-based Alloys for Photovoltaic Applications
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Advances in chip-integrated silicon-germanium photodetectors
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Waveguide platforms for mid-wave IR sensing
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Extension of spectral sensitivity of GeSn IR photodiode after laser annealing
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The formation and role of the SiO2 oxidation layer in the 4H-SiC/β-Ga2O3 interface
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Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering
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Investigation of Sn-containing precursors for in-plane GeSn nanowire growth
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Van der Waals interfaces in multilayer junctions for ultraviolet photodetection
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Photoconductive PbSe thin films for infrared imaging
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Chalcogenide-based, all-dielectric, ultrathin metamaterials with perfect, incidence-angle sensitive, mid-infrared absorption: inverse design, analysis, and applications
inferred← citeshttps://doi.org/10.1039/d1nr07293eopenalex-snapshot
Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing
inferred← citeshttps://doi.org/10.1039/d2nr07107jopenalex-snapshot
Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
inferred← citeshttps://doi.org/10.1039/d2ra04181bopenalex-snapshot
Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices
inferred← citeshttps://doi.org/10.1039/d2tc00830kopenalex-snapshot
High carrier lifetimes in epitaxial germanium–tin/Al(In)As heterostructures with variable tin compositions
inferred← citeshttps://doi.org/10.1039/d3nr05904aopenalex-snapshot
GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation
inferred← citeshttps://doi.org/10.1039/d3tc01018jopenalex-snapshot
Lattice matched GeSn/InAlAs heterostructure: role of Sn in energy band alignment, atomic layer diffusion and photoluminescence
inferred← citeshttps://doi.org/10.1039/d4mh01094aopenalex-snapshot
Origin and suppression of dark current for high-performance colloidal quantum dot short-wave infrared photodetectors
inferred← citeshttps://doi.org/10.1039/d4nr03472dopenalex-snapshot
Solid-state synthesis of Si 1− x Ge x nanoalloys with composition-tunable energy gaps and visible to near infrared optical properties
inferred← citeshttps://doi.org/10.1039/d5nr01090jopenalex-snapshot
Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys
inferred← citeshttps://doi.org/10.1063/5.0006711openalex-snapshot
Planar GeSn photodiode for high-detectivity photodetection at 1550 nm
inferred← citeshttps://doi.org/10.1063/5.0019861openalex-snapshot
Temperature dependent carrier lifetime, diffusion coefficient, and diffusion length in Ge0.95Sn0.05 epilayer
inferred← citeshttps://doi.org/10.1063/5.0043511openalex-snapshot
Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors
inferred← citeshttps://doi.org/10.1063/5.0044374openalex-snapshot
Non-equilibrium longitudinal optical phonons and their lifetimes
inferred← citeshttps://doi.org/10.1063/5.0074478openalex-snapshot
Room temperature optically pumped GeSn microdisk lasers
inferred← citeshttps://doi.org/10.1063/5.0084940openalex-snapshot
Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 μm for mid-infrared Si photonics
inferred← citeshttps://doi.org/10.1063/5.0087379openalex-snapshot
Ge–Ge0.92Sn0.08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
inferred← citeshttps://doi.org/10.1063/5.0124720openalex-snapshot
Dark current in monolithic extended-SWIR GeSn PIN photodetectors
inferred← citeshttps://doi.org/10.1063/5.0149483openalex-snapshot
Remote plasma-enhanced chemical vapor deposition of GeSn on Si: Material and defect characterization
inferred← citeshttps://doi.org/10.1063/5.0187087openalex-snapshot
Probing the infrared properties of a p-doped Ge0.938Sn0.062 thin film via polarization-dependent FTIR spectroscopy
inferred← citeshttps://doi.org/10.1063/5.0197018openalex-snapshot
Extended short-wave infrared high-speed all-GeSn PIN photodetectors on silicon
inferred← citeshttps://doi.org/10.1063/5.0197236openalex-snapshot
Advancements in miniaturized infrared spectroscopic-based volatile organic compound sensors: A systematic review
inferred← citeshttps://doi.org/10.1063/5.0198126openalex-snapshot
Auger-limited minority carrier lifetime in GeSn/SiGeSn quantum well
inferred← citeshttps://doi.org/10.1063/5.0218623openalex-snapshot
Defects in Ge and GeSn and their impact on optoelectronic properties
inferred← citeshttps://doi.org/10.1063/5.0222890openalex-snapshot
Mid-infrared silicon photonics: From benchtop to real-world applications
inferred← citeshttps://doi.org/10.1063/5.0225536openalex-snapshot
All-thin film nano-optoelectronic p-GeSn/i-GeSn/n-GeBi heterojunction for near-infrared photodetection and terahertz modulation
inferred← citeshttps://doi.org/10.1063/5.0263644openalex-snapshot
Perspectives of active Si photonics devices for data communication and optical sensing
inferred← citeshttps://doi.org/10.1063/5.0270281openalex-snapshot
Kinetics of short-range order formation in GeSn alloy: MBE vs CVD
inferred← citeshttps://doi.org/10.1063/5.0280475openalex-snapshot
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
inferred← citeshttps://doi.org/10.1063/5.0286160openalex-snapshot
Ge0.95Sn0.05 on Si avalanche photodiode with spectral response cutoff at 2.14 μm
inferred← citeshttps://doi.org/10.1063/5.0287945openalex-snapshot
High-quality GeSn grown in foundry mode via chemical vapor deposition enabling lasing up to 235 K
inferred← citeshttps://doi.org/10.1063/5.0291304openalex-snapshot
X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
inferred← citeshttps://doi.org/10.1063/5.0304780openalex-snapshot
Hyperdoping SiGe with S using ion implantation and pulsed laser melting for infrared absorption and detection
inferred← citeshttps://doi.org/10.1063/5.0308927openalex-snapshot
Determination of composition, strain, and layer thickness of germanium-tin superlattices using x-ray diffraction
inferred← citeshttps://doi.org/10.1063/5.0332368openalex-snapshot
Observation of bandgap narrowing in p -type doped GeSn alloys
inferred← citeshttps://doi.org/10.1063/5.0339743openalex-snapshot
Dilute Pb in Ge materials fabricated by ion implantation and pulsed laser melting
inferred← citeshttps://doi.org/10.1080/15599612.2024.2342279openalex-snapshot
Review of sensing and actuation technologies – from optical MEMS and nanophotonics to photonic nanosystems
inferred← citeshttps://doi.org/10.1088/1361-6463/ad365bopenalex-snapshot
Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate
inferred← citeshttps://doi.org/10.1088/1361-6463/ada2a3openalex-snapshot
High performance n-MoSe2/p-Ge-GeSn MQW/n-Ge heterojunction phototransistor for extended short-wave infrared photodetection
inferred← citeshttps://doi.org/10.1088/1361-648x/ae1c0bopenalex-snapshot
Shedding light on epitaxial SiGeSn alloys with Raman spectroscopy: local order and thermomechanical properties
inferred← citeshttps://doi.org/10.1088/1361-6528/ad3250openalex-snapshot
Research progress of out-of-plane GeSn nanowires
inferred← citeshttps://doi.org/10.1088/1361-6528/ada9a6openalex-snapshot
Infrared photoresponse of GeSiSn p–i–n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers
inferred← citeshttps://doi.org/10.1088/1361-6641/ab9846openalex-snapshot
Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors
inferred← citeshttps://doi.org/10.1088/1361-6641/ae6df4openalex-snapshot
Explicit lattice parameter determination and Raman study of GeSn-epilayers on Ge/Gd 2 O 3 /Si(111) substrates
inferred← citeshttps://doi.org/10.1088/1402-4896/ad5e04openalex-snapshot
Recent advancements and progress in development in chalcogenide (S, Se)-based thin films for high-performance photodetectors: a review
inferred← citeshttps://doi.org/10.1088/2515-7647/ac3839openalex-snapshot
Ge-on-Si single-photon avalanche diode detectors for short-wave infrared wavelengths
inferred← citeshttps://doi.org/10.1103/hg6x-dbtjopenalex-snapshot
Strain-driven evolution of structural and carrier recombination dynamics in germanium
inferred← citeshttps://doi.org/10.1103/physrevapplied.14.064051openalex-snapshot
Gold-Hyperdoped Germanium with Room-Temperature Sub-Band-Gap Optoelectronic Response
inferred← citeshttps://doi.org/10.1103/physrevapplied.14.064068openalex-snapshot
Continuous-Wave Magneto-Optical Determination of the Carrier Lifetime in Coherent Ge1−xSnx/Ge Heterostructures
inferred← citeshttps://doi.org/10.1103/physrevapplied.15.014034openalex-snapshot
Extended Short-Wave Infrared Absorption in Group-IV Nanowire Arrays
inferred← citeshttps://doi.org/10.1103/physrevapplied.20.064001openalex-snapshot
Radiative carrier lifetime in Ge1−xSnx midinfrared emitters
inferred← citeshttps://doi.org/10.1103/physrevapplied.23.014074openalex-snapshot
First-principles calculation of alloy scattering and n -type mobility in strained Ge − Sn
inferred← citeshttps://doi.org/10.1103/physrevmaterials.7.074605openalex-snapshot
Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1109/elnano50318.2020.9088818openalex-snapshot
Optimization of 4T Pixel Structure BiCMOS Detectors using y-parameter Representation
inferred← citeshttps://doi.org/10.1109/honet59747.2023.10374782openalex-snapshot
Increasing Internet Bandwidth for IoT with Silicon Photonics Enabled by GeSn Alloys
inferred← citeshttps://doi.org/10.1109/ipc47351.2020.9252483openalex-snapshot
Vertical GeSn electro-absorption modulators grown on Silicon for the mid-infrared
inferred← citeshttps://doi.org/10.1109/ipc60965.2024.10799550openalex-snapshot
Si-Based GeSn 320×256 Focal Plane Array for Shrot-Wave Infrared Imaging
inferred← citeshttps://doi.org/10.1109/jphot.2021.3065223openalex-snapshot
High-Performance GeSn Photodetector Covering All Telecommunication Bands
inferred← citeshttps://doi.org/10.1109/jphot.2022.3164943openalex-snapshot
Metal-Semiconductor-Metal Photodetectors on a GeSn-on-Insulator Platform for 2 µm Applications
inferred← citeshttps://doi.org/10.1109/jphotov.2023.3282707openalex-snapshot
Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon
inferred← citeshttps://doi.org/10.1109/jsen.2022.3159833openalex-snapshot
Design of Mid-Infrared Ge 1–x Sn x Homojunction p-i-n Photodiodes on Si Substrate
inferred← citeshttps://doi.org/10.1109/jsen.2023.3319501openalex-snapshot
Mid-Infrared Photodetectors Based on Lattice Matched SiGeSn/GeSn Heterojunction Bipolar Transistor With an i -GeSn Absorber Layer
inferred← citeshttps://doi.org/10.1109/jstqe.2021.3065204openalex-snapshot
Achievable Performance of Uncooled Homojunction GeSn Mid-Infrared Photodetectors
inferred← citeshttps://doi.org/10.1109/jstqe.2021.3078894openalex-snapshot
High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3390157openalex-snapshot
Temperature-Dependent Characteristics of GeSn Waveguide p-i-n Photodetectors: Step Towards Cryogenic Silicon Photonics
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3419839openalex-snapshot
Impact of Carrier Momentum (k)-Space Separation on GeSn Infrared Photodetectors
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3430060openalex-snapshot
Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3450302openalex-snapshot
Transfer-Printed Multiple GeSn Membrane Mid-Infrared Photodetectors
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3453252openalex-snapshot
Theoretical Analysis of Threshold Characteristics in Electrically-Driven GeSn Lasers
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3457154openalex-snapshot
Ion Implantation Damage Recovery in GeSn Thin Films
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3476178openalex-snapshot
Research Progress of GeSn Photodetectors for Infrared Application
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3482257openalex-snapshot
Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3499859openalex-snapshot
Ambipolar Transport in Polycrystalline GeSn Transistors for Complementary Metal-Oxide-Semiconductor Applications
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3520704openalex-snapshot
Direct Bandgap Ge 0.846 Sn 0.154 Photodiodes for Gas Sensing in the Mid-Wave Infrared
inferred← citeshttps://doi.org/10.1109/saupec57889.2023.10057814openalex-snapshot
Performance Analysis of Cascode Configuration 3T Pixel Structure Detectors Using y-parameter Representation
inferred← citeshttps://doi.org/10.1109/saupec60914.2024.10445028openalex-snapshot
Gain Improvement in 4T Structure Detectors using Cascode Configured Pixels
inferred← citeshttps://doi.org/10.1109/siphotonics55903.2023.10141903openalex-snapshot
Direct Band Gap Ge0.85Sn0.15 Photodiodes for Room Temperature Gas Sensing
inferred← citeshttps://doi.org/10.1109/sum48717.2021.9505964openalex-snapshot
Magneto-optical investigation of the dynamics of spin-polarized carriers in GeSn heterostructures
inferred← citeshttps://doi.org/10.1109/ted.2024.3384347openalex-snapshot
High-Performance Flexible Near-Infrared-II Phototransistor Realized by Combining the Optimized Charge-Transfer-Complex/Organic Heterojunction Active Layer and Gold Nanoparticle Modification
inferred← citeshttps://doi.org/10.1109/tnb.2021.3136571openalex-snapshot
GeSn-Based Multiple-Quantum-Well Photodetectors for Mid-Infrared Sensing Applications
inferred← citeshttps://doi.org/10.1116/6.0002525openalex-snapshot
High-quality GeSn thin-film resonant cavities for short-wave infrared applications
inferred← citeshttps://doi.org/10.1116/6.0003237openalex-snapshot
Mid-infrared emission of germanium-tin films produced by sputtering
inferred← citeshttps://doi.org/10.1116/6.0003556openalex-snapshot
Group-IV based pin photodetectors for C-band application
inferred← citeshttps://doi.org/10.1116/6.0003563openalex-snapshot
Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling
inferred← citeshttps://doi.org/10.1116/6.0003565openalex-snapshot
Effects of ion implantation with arsenic and boron in germanium-tin layers
inferred← citeshttps://doi.org/10.1116/6.0003668openalex-snapshot
Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods
inferred← citeshttps://doi.org/10.1116/6.0003689openalex-snapshot
Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates
inferred← citeshttps://doi.org/10.1116/6.0003734openalex-snapshot
Development of aspect ratio trapping growth of GeSn on Si for midwave infrared applications
inferred← citeshttps://doi.org/10.1116/6.0003798openalex-snapshot
Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor
inferred← citeshttps://doi.org/10.1116/6.0003933openalex-snapshot
Epitaxial SiGeSn grown on Si by ion implantation
inferred← citeshttps://doi.org/10.1134/s1063783424601887openalex-snapshot
Temperature-Dependent Raman Spectroscopy Analysis of Epitaxially Grown Ge0.91Sn0.09 on GaAs (001) Substrate
inferred← citeshttps://doi.org/10.1364/cleo_at.2020.jm2e.1openalex-snapshot
Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon
inferred← citeshttps://doi.org/10.1364/cleo_at.2020.jtu2b.6openalex-snapshot
High-Efficiency Mid-Wave Infrared (MWIR) Sensors with Embedded Two Grating Layers for Gas Monitoring Applications
inferred← citeshttps://doi.org/10.1364/cleo_at.2026.aw2e.4openalex-snapshot
Epitaxially Grown GeSn on Ge with Infrared-Transparent Conductive Oxide for Mid-Wave Infrared Photodetectors
inferred← citeshttps://doi.org/10.1364/cleo_si.2026.sth3b.7openalex-snapshot
Bias-Polarity-Controlled VIS–SWIR Dual-Mode Photodetection in a Grafted GaAs/MQW-GeSn/Ge Heterostructure
inferred← citeshttps://doi.org/10.1364/oe.389378openalex-snapshot
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm
inferred← citeshttps://doi.org/10.1364/oe.409944openalex-snapshot
Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate
inferred← citeshttps://doi.org/10.1364/oe.420543openalex-snapshot
Surface plasmon enhanced GeSn photodetectors operating at 2 µm
inferred← citeshttps://doi.org/10.1364/oe.473564openalex-snapshot
Longwave IR lattice matched L-valley Ge/GeSiSn waveguide quantum cascade detector
inferred← citeshttps://doi.org/10.1364/oe.541176openalex-snapshot
Wavelength-agnostic metasurface design for next-generation 2D photodetectors
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