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Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

https://doi.org/10.1016/j.apsusc.2023.157086

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adom.202101213openalex-snapshot

Enhanced GeSn Microdisk Lasers Directly Released on Si

inferredcites →https://doi.org/10.1002/adom.202201024openalex-snapshot

Room Temperature Lasing in GeSn Microdisks Enabled by Strain Engineering

inferredcites →https://doi.org/10.1002/smtd.202200029openalex-snapshot

3D Nanoscale Mapping of Short‐Range Order in GeSn Alloys

inferredcites →https://doi.org/10.1007/bf02868550openalex-snapshot

The Ge−Sn (Germanium−Tin) system

inferredcites →https://doi.org/10.1007/s10853-015-8990-4openalex-snapshot

Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method

inferredcites →https://doi.org/10.1016/0040-6090(76)90085-7openalex-snapshot

Use of misfit strain to remove dislocations from epitaxial thin films

inferredcites →https://doi.org/10.1016/j.jallcom.2022.164068openalex-snapshot

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

inferredcites →https://doi.org/10.1016/j.jallcom.2022.165453openalex-snapshot

Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing

inferredcites →https://doi.org/10.1016/j.jcrysgro.2017.01.041openalex-snapshot

Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas

inferredcites →https://doi.org/10.1016/j.jcrysgro.2017.10.030openalex-snapshot

GeSn growth kinetics in reduced pressure chemical vapor deposition from Ge2H6 and SnCl4

inferredcites →https://doi.org/10.1016/j.jcrysgro.2018.04.008openalex-snapshot

Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy

inferredcites →https://doi.org/10.1016/j.jcrysgro.2020.125996openalex-snapshot

Highly strained Ge1-xSnx alloy films with high Sn compositions grown by MBE

inferredcites →https://doi.org/10.1016/j.jcrysgro.2021.126399openalex-snapshot

Study of strain evolution mechanism in Ge1−xSnx materials grown by low temperature molecular beam epitaxy

inferredcites →https://doi.org/10.1016/j.jcrysgro.2022.126954openalex-snapshot

The Transition of Growth Behaviors of Moderate Sn Fraction Ge1-Xsnx (8%<X<15%) Epilayers with Low Temperature Molecular Beam Epitaxy

inferredcites →https://doi.org/10.1016/j.jcrysgro.2022.127045openalex-snapshot

Sn distribution in Ge/GeSn heterostructures formed by sputter epitaxy method

inferredcites →https://doi.org/10.1016/j.jlumin.2020.117539openalex-snapshot

Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs

inferredcites →https://doi.org/10.1016/j.pcrysgrow.2015.11.001openalex-snapshot

Si–Ge–Sn alloys: From growth to applications

inferredcites →https://doi.org/10.1016/j.tsf.2015.06.008openalex-snapshot

Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy

inferredcites →https://doi.org/10.1021/acs.chemmater.5b01327openalex-snapshot

Direct Bandgap Group IV Epitaxy on Si for Laser Applications

inferredcites →https://doi.org/10.1021/acsphotonics.9b00845openalex-snapshot

Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications

inferredcites →https://doi.org/10.1038/nphoton.2014.321openalex-snapshot

Lasing in direct-bandgap GeSn alloy grown on Si

inferredcites →https://doi.org/10.1038/s41598-018-24018-6openalex-snapshot

Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth

inferredcites →https://doi.org/10.1063/1.2945629openalex-snapshot

Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

inferredcites →https://doi.org/10.1063/1.342834openalex-snapshot

Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area

inferredcites →https://doi.org/10.1063/1.3645620openalex-snapshot

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

inferredcites →https://doi.org/10.1063/1.4792649openalex-snapshot

Achieving direct band gap in germanium through integration of Sn alloying and external strain

inferredcites →https://doi.org/10.1063/1.4816660openalex-snapshot

Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy

inferredcites →https://doi.org/10.1063/1.4892302openalex-snapshot

Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

inferredcites →https://doi.org/10.1063/1.4908121openalex-snapshot

Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation

inferredcites →https://doi.org/10.1063/1.4922529openalex-snapshot

Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

inferredcites →https://doi.org/10.1063/1.5000353openalex-snapshot

Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μ m up to 180 K

inferredcites →https://doi.org/10.1063/1.5050273openalex-snapshot

Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation

inferredcites →https://doi.org/10.1088/1361-6463/abe1e8openalex-snapshot

Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn

inferredcites →https://doi.org/10.1088/1361-6463/ac17b4openalex-snapshot

Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure

inferredcites →https://doi.org/10.1088/1361-6641/aa8084openalex-snapshot

Growth and structural properties of step-graded, high Sn content GeSn layers on Ge

inferredcites →https://doi.org/10.1116/1.4975149openalex-snapshot

Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE

inferredcites →https://doi.org/10.1149/2.011304jssopenalex-snapshot

Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

inferredcites →https://doi.org/10.1149/2.013304jssopenalex-snapshot

Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study

inferredcites →https://doi.org/10.1346/ccmn.1997.0450315openalex-snapshot

XRD Measurement of Mean Crystallite Thickness of Illite and Illite/Smectite: Reappraisal of the Kubler Index and the Scherrer Equation

inferredcites →https://doi.org/10.1364/oe.20.027297openalex-snapshot

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

inferredcites →https://doi.org/10.1364/ol.432116openalex-snapshot

Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well photoconductors on silicon

inferredcites →https://doi.org/10.1364/ome.9.003277openalex-snapshot

UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices

inferredcites →https://doi.org/10.1364/optica.395687openalex-snapshot

Electrically injected GeSn lasers on Si operating up to 100 K

inferredcites →https://doi.org/10.1364/optica.4.000185openalex-snapshot

Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells

inferredcites →https://doi.org/10.1364/prj.443144openalex-snapshot

Electrically injected GeSn lasers with peak wavelength up to 2.7 μm

inferredcites →https://doi.org/10.3390/cryst12121810openalex-snapshot

Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering

inferredcites →https://doi.org/10.7567/apex.9.031201openalex-snapshot

Sn migration control at high temperature due to high deposition speed for forming high-quality GeSn layer

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4653522openalex-extracted

Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

inferred← citeshttps://doi.org/10.1002/adom.202301724openalex-snapshot

High‐Performance N‐MoSe2/P‐GeSn/N‐Ge van der Waals Heterojunction Phototransistor for Short‐Wave Infrared Photodetection

inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.159673openalex-snapshot

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.159707openalex-snapshot

Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing

inferred← citeshttps://doi.org/10.1016/j.mssp.2026.110842openalex-snapshot

Sputtering heteroepitaxy of Ge1−xSnx layer with Sn composition ranging 10–25% on Si(001) substrate

inferred← citeshttps://doi.org/10.1016/j.mtcomm.2024.111143openalex-snapshot

Impact of stoichiometry and crystallography growth strain on GeSn alloys from first principles calculations study

inferred← citeshttps://doi.org/10.1021/acsphotonics.5c00571openalex-snapshot

Hyper Self-Doping of GeIn for Cost-Effective Ge PIN Photodiodes with Record-Low Dark Current

inferred← citeshttps://doi.org/10.1063/5.0218623openalex-snapshot

Defects in Ge and GeSn and their impact on optoelectronic properties

inferred← citeshttps://doi.org/10.1109/led.2023.3340333openalex-snapshot

Low-Cost Self-Powered Shortwave Infrared Photodetectors With GeSn/Ge Multiple Quantum Wells Grown by Magnetron Sputtering

inferred← citeshttps://doi.org/10.1109/led.2024.3480361openalex-snapshot

Low-Cost High-Performance p-GaSe/i-GeSn/n-GOI Heterojunction Photodiode for Visible to Short-Wave Infrared Multispectral Detection

inferred← citeshttps://doi.org/10.1116/6.0003561openalex-snapshot

Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications

inferred← citeshttps://doi.org/10.1364/ol.529590openalex-snapshot

Low-cost and efficient all group-IV visible/shortwave infrared dual-band photodetector

inferred← citeshttps://doi.org/10.1364/ol.596692openalex-snapshot

GeSn QD decorated graphene/n-Ge mixed-dimensional heterostructure for extended shortwave infrared detection

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