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Growth of Sigesn Compounds by Ion Implantation and Their Optical Properties
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Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1007/s11664-012-2011-zopenalex-extracted
Synthesis of Ge1−x Sn x Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM)
inferredcites →https://doi.org/10.1016/0026-0657(94)90443-xopenalex-extracted
Applied Physics Letters
inferredcites →https://doi.org/10.1016/j.apsadv.2021.100112openalex-extracted
Systematic and collaborative approach to problem solving using X-ray photoelectron spectroscopy
inferredcites →https://doi.org/10.1016/j.nimb.2024.165287openalex-extracted
Nuclear instruments and methods in physics research section B: Beam interactions with materials and atoms
inferredcites →https://doi.org/10.1016/j.optlastec.2020.106200openalex-extracted
Direct-indirect GeSn band structure formation by laser Radiation: The enhancement of Sn solubility in Ge
inferredcites →https://doi.org/10.1016/j.pcrysgrow.2015.11.001openalex-extracted
Si–Ge–Sn alloys: From growth to applications
inferredcites →https://doi.org/10.1021/acsphotonics.9b00845openalex-extracted
Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
inferredcites →https://doi.org/10.1063/1.367101openalex-extracted
Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation
inferredcites →https://doi.org/10.1063/1.4889926openalex-extracted
Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSny ternary alloys
inferredcites →https://doi.org/10.1063/1.5050273openalex-extracted
Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation
inferredcites →https://doi.org/10.1063/5.0030230openalex-extracted
Study of SiGeSn/GeSn single quantum well toward high-performance all-group-IV optoelectronics
inferredcites →https://doi.org/10.1063/5.0043511openalex-extracted
Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors
inferredcites →https://doi.org/10.1088/0268-1242/22/7/012openalex-extracted
Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials
inferredcites →https://doi.org/10.1109/jstqe.2019.2938057openalex-extracted
Extended Wavelength Responsivity of a Germanium Photodetector Integrated With a Silicon Waveguide Exploiting the Indirect Transition
inferredcites →https://doi.org/10.1109/rapid.2019.8864328openalex-extracted
Development of GeSn/SiGeSn Technique towards Integrated Mid-Infrared Photonics Applications
inferredcites →https://doi.org/10.1134/1.1755894openalex-extracted
Properties of self-organized SiGe nanostructures formed by ion implantation
inferredcites →https://doi.org/10.1149/2.0091412jssopenalex-extracted
Structural and Optical Properties of Amorphous and Crystalline GeSn Layers on Si
inferredcites →https://doi.org/10.3390/physics4020025openalex-extracted
Ion Beam Modification for Si Photonics
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