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Atomic Layer Deposition of Hafnium Dioxide Films from 1-Methoxy-2-methyl-2-propanolate Complex of Hafnium

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide
inferredcites →https://doi.org/10.1002/1521-3862(200011)6:6<297::aid-cvde297>3.0.co;2-8openalex-snapshot
Low-Temperature Deposition of Zirconium Oxide-Based Nanocrystalline Films by Alternate Supply of Zr[OC(CH3)3]4 and H2O
inferredcites →https://doi.org/10.1002/1521-3862(20020704)8:4<163::aid-cvde163>3.0.co;2-vopenalex-snapshot
Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films
inferredcites →https://doi.org/10.1002/1521-3862(20020903)8:5<199::aid-cvde199>3.0.co;2-uopenalex-snapshot
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water
inferredcites →https://doi.org/10.1002/anie.199521871openalex-snapshot
Volatile Metal Alkoxides according to the Concept of Donor Functionalization
inferredcites →https://doi.org/10.1007/bf00541601openalex-snapshot
Hafnia and hafnia-toughened ceramics
inferredcites →https://doi.org/10.1016/0022-0248(72)90260-6openalex-snapshot
Thin films of metal oxides on silicon by chemical vapor deposition with organometallic compounds. I
inferredcites →https://doi.org/10.1016/0040-6090(92)90874-bopenalex-snapshot
Atomic Layer Epitaxy
inferredcites →https://doi.org/10.1016/0040-6090(93)90762-eopenalex-snapshot
Optical determination of the film thicknesses in multilayer thin film structures
inferredcites →https://doi.org/10.1016/0040-6090(94)90168-6openalex-snapshot
Development of crystallinity and morphology in hafnium dioxide thin films grown by atomic layer epitaxy
inferredcites →https://doi.org/10.1016/s0040-6090(00)00890-7openalex-snapshot
Effect of water dose on the atomic layer deposition rate of oxide thin films
inferredcites →https://doi.org/10.1016/s0040-6090(01)01678-9openalex-snapshot
Thin film atomic layer deposition equipment for semiconductor processing
inferredcites →https://doi.org/10.1016/s0040-6090(02)00612-0openalex-snapshot
Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors
inferredcites →https://doi.org/10.1016/s0040-6090(96)08927-4openalex-snapshot
Analysis of AlN thin films by combining TOF-ERDA and NRB techniques
inferredcites →https://doi.org/10.1016/s0040-6090(98)01356-xopenalex-snapshot
Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films
inferredcites →https://doi.org/10.1016/s0167-9317(01)00667-0openalex-snapshot
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
inferredcites →https://doi.org/10.1021/cm010145kopenalex-snapshot
Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics
inferredcites →https://doi.org/10.1021/cr00096a004openalex-snapshot
Metal alkoxides as precursors for electronic and ceramic materials
inferredcites →https://doi.org/10.1039/b105272copenalex-snapshot
inferredcites →https://doi.org/10.1039/b109994aopenalex-snapshot
Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2
inferredcites →https://doi.org/10.1039/b202675aopenalex-snapshot
Molecular design of improved precursors for the MOCVD of electroceramic oxides
inferredcites →https://doi.org/10.1049/el:20020801openalex-snapshot
HfO 2 and ZrO 2 alternative gate dielectrics for silicon devices by liquid injection chemical vapour deposition
inferredcites →https://doi.org/10.1063/1.1417991openalex-snapshot
Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
inferredcites →https://doi.org/10.1063/1.1458692openalex-snapshot
Thermodynamic stability of high- K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
inferredcites →https://doi.org/10.1063/1.1487923openalex-snapshot
Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition
inferredcites →https://doi.org/10.1063/1.1492320openalex-snapshot
Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate
inferredcites →https://doi.org/10.1149/1.1450617openalex-snapshot
Effect of Annealing Conditions on a Hafnium Oxide Reinforced SiO[sub 2] Gate Dielectric Deposited by Plasma-Enhanced Metallorganic CVD
inferredcites →https://doi.org/10.1149/1.1462875openalex-snapshot
Atomic Layer Deposition of Hafnium Oxide Using Anhydrous Hafnium Nitrate
inferredcites →https://doi.org/10.1149/1.1504720openalex-snapshot
Deposition of HfO[sub 2] Thin Films in HfI[sub 4]-Based Processes

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Amidoxime-Containing Zr and Hf Precursors for Thin Film Deposition
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Oxide films
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Vapor Phase Growth of Metal‐Oxide Thin Films and Nanostructures
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C60 Nanostructures for Applications in Information Technology
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Atomic Layer Deposition of High‐k Oxides of the Group 4 Metals for Memory Applications
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Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization
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Non‐Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition
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Non‐Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition
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Overcoming Size Effects in Ferroelectric Thin Films
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Atomic Layer Deposition of Hafnium Dioxide Films Using Hafnium Bis(2‐butanolate)bis(1‐methoxy‐2‐methyl‐2‐propanolate) and Water
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Growth of Hafnium Dioxide Thin Films by Liquid‐Injection MOCVD Using Alkylamide and Hydroxylamide Precursors
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Atomic Layer Deposition of ZrO2 Thin Films Using Dichlorobis[bis‐(trimethylsilyl)amido]zirconium and Water
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Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Hydroxylamide and Water
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Growth of Hafnium Aluminate Thin Films by Liquid Injection MOCVD Using Alkoxide Precursors
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Deposition of HfO2, Gd2O3 and PrOx by Liquid Injection ALD Techniques
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MOCVD and ALD of High‐k Dielectric Oxides Using Alkoxide Precursors
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ALD of Hafnium Dioxide Thin Films Using the New Alkoxide Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4
inferred← citeshttps://doi.org/10.1002/cvde.200706589openalex-snapshot
Growth of HfO2 by Liquid Injection MOCVD and ALD Using New Hafnium‐Cyclopentadienyl Precursors
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The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source
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Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors
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[(Me3Si)2N]3Lu: Molecular Structure and Use as Lu and Si Source for Atomic Layer Deposition of Lu Silicate Films
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DISORDERED STRUCTURE AND DENSITY OF GAP STATES IN HIGH-PERMITTIVITY THIN SOLID FILMS
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High-κ dielectrics and advanced channel concepts for Si MOSFET
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Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor
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Precursors as enablers of ALD technology: Contributions from University of Helsinki
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Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures
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Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water
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Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films
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Amidoxime-Containing Zr and Hf Atomic Layer Deposition Precursors for Metal Oxide Thin Films
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The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
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Atomic Layer Deposition of HfO2 Films Using Tetrakis(1-(N,N-dimethylamino)-2-propoxy)hafnium [Hf(dmap)4] for Advanced Gate Dielectrics Applications
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Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films
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Atomic Layer Deposition of Al2O3 Thin Films from a 1-Methoxy-2-methyl-2-propoxide Complex of Aluminum and Water
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Atomic Layer Deposition of HfO2 Using Alkoxides as Precursors
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Atomic layer deposition
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Some recent developments in the MOCVD and ALD of high-κ dielectric oxides
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Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water
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Non-aqueous sol–gel routes applied to atomic layer deposition of oxides
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Deposition of ZrO2 and HfO2 thin films by liquid injection MOCVD and ALD using ansa-metallocene zirconium and hafnium precursors
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Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition
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Physical and electrical characteristics of atomic-layer-deposited hafnium dioxide formed using hafnium tetrachloride and tetrakis(ethylmethylaminohafnium)
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