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HfO[sub 2] Films Grown by ALD Using Cyclopentadienyl-Type Precursors and H[sub 2]O or O[sub 3] as Oxygen Source

https://doi.org/10.1149/1.2162447
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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/1521-3862(20020903)8:5<199::aid-cvde199>3.0.co;2-uopenalex-snapshot
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water
inferredcites →https://doi.org/10.1002/anie.200301652openalex-snapshot
Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges
inferredcites →https://doi.org/10.1002/cvde.200306263openalex-snapshot
Atomic Layer Deposition of Hafnium Dioxide Films Using Hafnium Bis(2‐butanolate)bis(1‐methoxy‐2‐methyl‐2‐propanolate) and Water
inferredcites →https://doi.org/10.1002/pssa.200406798openalex-snapshot
Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials
inferredcites →https://doi.org/10.1007/s00216-005-3365-3openalex-snapshot
Analysis of ALD-processed thin films by ion-beam techniques
inferredcites →https://doi.org/10.1016/0038-1101(80)90064-7openalex-snapshot
A single-frequency approximation for interface-state density determination
inferredcites →https://doi.org/10.1016/0040-6090(93)90762-eopenalex-snapshot
Optical determination of the film thicknesses in multilayer thin film structures
inferredcites →https://doi.org/10.1016/0040-6090(94)90168-6openalex-snapshot
Development of crystallinity and morphology in hafnium dioxide thin films grown by atomic layer epitaxy
inferredcites →https://doi.org/10.1016/0168-583x(95)01183-8openalex-snapshot
ERDA with very heavy ion beams
inferredcites →https://doi.org/10.1016/j.tsf.2005.05.050openalex-snapshot
Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water
inferredcites →https://doi.org/10.1016/s0040-6090(02)00612-0openalex-snapshot
Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors
inferredcites →https://doi.org/10.1016/s0040-6090(02)00765-4openalex-snapshot
Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films
inferredcites →https://doi.org/10.1016/s0167-9317(01)00667-0openalex-snapshot
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
inferredcites →https://doi.org/10.1016/s0167-9317(03)00291-0openalex-snapshot
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
inferredcites →https://doi.org/10.1016/s1359-0286(98)80080-6openalex-snapshot
Atomic layer epitaxy
inferredcites →https://doi.org/10.1021/cm020357xopenalex-snapshot
Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors
inferredcites →https://doi.org/10.1021/cm021328popenalex-snapshot
Atomic Layer Deposition of Hafnium Dioxide Films from 1-Methoxy-2-methyl-2-propanolate Complex of Hafnium
inferredcites →https://doi.org/10.1021/ja00800a018openalex-snapshot
.pi.-Cyclopentadienyl and .pi.-indenyl compounds of titanium, zirconium, and hafnium containing .sigma.-bonded organic substituents
inferredcites →https://doi.org/10.1023/a:1023948617372openalex-snapshot
Atomic layer deposition of HfO2 thin films and nanolayered HfO2–Al2O3–Nb2O5 dielectrics
inferredcites →https://doi.org/10.1039/b417866copenalex-snapshot
Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water
inferredcites →https://doi.org/10.1063/1.1553998openalex-snapshot
Physicochemical properties of HfO2 in response to rapid thermal anneal
inferredcites →https://doi.org/10.1063/1.1599980openalex-snapshot
Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant
inferredcites →https://doi.org/10.1063/1.1630696openalex-snapshot
Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor
inferredcites →https://doi.org/10.1063/1.1796513openalex-snapshot
Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films
inferredcites →https://doi.org/10.1063/1.1829773openalex-snapshot
Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor
inferredcites →https://doi.org/10.1063/1.1850596openalex-snapshot
Investigation of the initial stage of growth of HfO2 films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering
inferredcites →https://doi.org/10.1063/1.1885167openalex-snapshot
Influence of the oxygen concentration of atomic-layer-deposited HfO2 films on the dielectric property and interface trap density
inferredcites →https://doi.org/10.1116/1.1761186openalex-snapshot
Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone
inferredcites →https://doi.org/10.1143/jjap.42.1596openalex-snapshot
Electrical Characteristics of Ozone-Oxidized HfO2Gate Dielectrics
inferredcites →https://doi.org/10.1149/1.1859631openalex-snapshot
ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone
inferredcites →https://doi.org/10.1149/1.1884130openalex-snapshot
Comparison of Properties of an Al[sub 2]O[sub 3] Thin Layers Grown with Remote O[sub 2] Plasma, H[sub 2]O, or O[sub 3] as Oxidants in an ALD Process for HfO[sub 2] Gate Dielectrics
inferredcites →https://doi.org/10.1557/jmr.1996.0350openalex-snapshot
Thermodynamic stability of binary oxides in contact with silicon
inferredcites →https://doi.org/10.1887/0750309067openalex-snapshot
High-? Gate Dielectrics

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Amidoxime-Containing Zr and Hf Precursors for Thin Film Deposition
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Chemistry in the “Front End of the Line” (FEOL)
inferred← citeshttps://doi.org/10.1002/9783527639915.ch3openalex-snapshot
Precursors for ALD Processes
inferred← citeshttps://doi.org/10.1002/9783527646340.ch4openalex-snapshot
Atomic Layer Deposition Process of Hf‐Based High‐k Gate Dielectric Film on Si Substrate
inferred← citeshttps://doi.org/10.1002/admi.202300244openalex-snapshot
Interplay of Precursor and Plasma for The Deposition of HfO2 via PEALD: Film Growth and Dielectric Properties
inferred← citeshttps://doi.org/10.1002/cvde.200806716openalex-snapshot
The Atomic Layer Deposition of HfO2 and ZrO2 using Advanced Metallocene Precursors and H2O as the Oxygen Source
inferred← citeshttps://doi.org/10.1002/cvde.201400055openalex-snapshot
Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors
inferred← citeshttps://doi.org/10.1002/pssa.202100006openalex-snapshot
Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐Doped HfO2 Gate Insulator Deposited with H2O Oxygen Precursor during Atomic Layer Deposition Process
inferred← citeshttps://doi.org/10.1007/978-1-4614-8054-9_2openalex-snapshot
ALD Precursors and Reaction Mechanisms
inferred← citeshttps://doi.org/10.1007/978-1-4614-8054-9_7openalex-snapshot
Front End of the Line Process
inferred← citeshttps://doi.org/10.1007/s43207-021-00171-zopenalex-snapshot
Crystallographic structure and ferroelectricity of epitaxial hafnium oxide thin films
inferred← citeshttps://doi.org/10.1016/b978-0-08-096532-1.00401-5openalex-snapshot
Atomic Layer Deposition
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Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(100) using (CpMe)3Er precursor and ozone
inferred← citeshttps://doi.org/10.1016/j.apsusc.2023.156834openalex-snapshot
Preparation of wafer-scale highly conformalamorphous hafnium dioxide thin films by atomic layer deposition using a thermally stable boratabenzene ligand-containing hafnium precursor
inferred← citeshttps://doi.org/10.1016/j.apsusc.2025.165129openalex-snapshot
Area selective deposition of tungsten and ruthenium using a tungsten precursor inhibitor
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Mechanisms of surface reactions in thin solid film chemical deposition processes
inferred← citeshttps://doi.org/10.1016/j.ccr.2013.06.015openalex-snapshot
Energy-enhanced atomic layer deposition for more process and precursor versatility
inferred← citeshttps://doi.org/10.1016/j.ceramint.2021.10.102openalex-snapshot
Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin films
inferred← citeshttps://doi.org/10.1016/j.ceramint.2026.05.430openalex-snapshot
Impact of Co-reactants on the material and electrical properties of ALD-grown Al2O3
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2009.10.028openalex-snapshot
Growth and phase stabilization of HfO2 thin films by ALD using novel precursors
inferred← citeshttps://doi.org/10.1016/j.mee.2007.04.035openalex-snapshot
Atomic layer deposition of ZrO2 and HfO2 on deep trenched and planar silicon
inferred← citeshttps://doi.org/10.1016/j.tsf.2012.09.046openalex-snapshot
Initial growth mechanism of atomic layer deposited titanium dioxide using cyclopentadienyl-type precursor: A density functional theory study
inferred← citeshttps://doi.org/10.1016/j.tsf.2015.05.063openalex-snapshot
Ionic properties of ultrathin yttria-stabilized zirconia thin films fabricated by atomic layer deposition with water, oxygen, and ozone
inferred← citeshttps://doi.org/10.1021/acs.chemmater.7b04790openalex-snapshot
Selective Atomic Layer Deposition Mechanism for Titanium Dioxide Films with (EtCp)Ti(NMe2)3: Ozone versus Water
inferred← citeshttps://doi.org/10.1021/acs.inorgchem.1c02339openalex-snapshot
Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films
inferred← citeshttps://doi.org/10.1021/acs.jpcc.5b05286openalex-snapshot
Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
inferred← citeshttps://doi.org/10.1021/cm0626583openalex-snapshot
Atomic Layer Deposition of HfO2 Thin Films Exploiting Novel Cyclopentadienyl Precursors at High Temperatures
inferred← citeshttps://doi.org/10.1039/c3tc32561jopenalex-snapshot
Effects of O 3 and H 2 O as oxygen sources on the atomic layer deposition of HfO 2 gate dielectrics at different deposition temperatures
inferred← citeshttps://doi.org/10.1039/c8tc01476kopenalex-snapshot
Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO 2 films obtained from metal halide and amide precursors
inferred← citeshttps://doi.org/10.1039/c9ta08638bopenalex-snapshot
Degradation and regeneration mechanisms of NiO protective layers deposited by ALD on photoanodes
inferred← citeshttps://doi.org/10.1063/1.4757907openalex-snapshot
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
inferred← citeshttps://doi.org/10.1088/2631-7990/acd88eopenalex-snapshot
Atomic layer deposition of thin films: from a chemistry perspective
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Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions
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Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process
inferred← citeshttps://doi.org/10.1143/jjap.48.125503openalex-snapshot
Hafnium Oxide Film Etching Using Hydrogen Chloride Gas
inferred← citeshttps://doi.org/10.1149/1.2781532openalex-snapshot
Impact of Deposition Processes on Properties of Atomic-Layer-Deposited Hafnium Zirconate High-k Dielectrics
inferred← citeshttps://doi.org/10.1149/1.2965456openalex-snapshot
Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors
inferred← citeshttps://doi.org/10.1149/1.3552699openalex-snapshot
Effects of La2O3 Capping Layers Prepared by Different ALD Lanthanum Precursors on Flatband Voltage Tuning and EOT Scaling in TiN/HfO2/SiO2/Si MOS Structures
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Atomic layer deposition of HfO2, Al2O3, and HfAlOx using O3 and metal(diethylamino) precursors
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Advance of Atomic Layer Deposition in Semiconductor Materials Manufacturing Process: Cleaning Technology for Thin Film Formation Reactor
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