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Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

https://doi.org/10.1021/nl101027x
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Complete composition tunability of InGaN nanowires using a combinatorial approach
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Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers
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GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy
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inferredcites →https://doi.org/10.1063/1.123370openalex-snapshot
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Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
inferredcites →https://doi.org/10.1063/1.2204836openalex-snapshot
Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.2722672openalex-snapshot
Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes
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Influence of the quantum-confined Stark effect in an InGaN∕GaN quantum well on its coupling with surface plasmon for light emission enhancement
inferredcites →https://doi.org/10.1063/1.357872openalex-snapshot
High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes
inferredcites →https://doi.org/10.1088/0957-4484/21/19/195202openalex-snapshot
Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy
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Ultrafast Photodetection in the Quantum Wells of Single AlGaAs/GaAs-Based Nanowires
inferred← citeshttps://doi.org/10.1021/acs.nanolett.5b02900openalex-snapshot
Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires
inferred← citeshttps://doi.org/10.1021/acs.nanolett.5b03748openalex-snapshot
Radial Stark Effect in (In,Ga)N Nanowires
inferred← citeshttps://doi.org/10.1021/acs.nanolett.5b04190openalex-snapshot
Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters
inferred← citeshttps://doi.org/10.1021/acs.nanolett.6b01453openalex-snapshot
Epitaxy of GaN Nanowires on Graphene
inferred← citeshttps://doi.org/10.1021/acs.nanolett.6b01945openalex-snapshot
Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics
inferred← citeshttps://doi.org/10.1021/acs.nanolett.6b04483openalex-snapshot
Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers
inferred← citeshttps://doi.org/10.1021/acs.nanolett.7b00970openalex-snapshot
Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy
inferred← citeshttps://doi.org/10.1021/acs.nanolett.7b01136openalex-snapshot
Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires
inferred← citeshttps://doi.org/10.1021/acs.nanolett.7b04891openalex-snapshot
Nanoscale Relative Emission Efficiency Mapping Using Cathodoluminescence g(2) Imaging
inferred← citeshttps://doi.org/10.1021/acs.nanolett.9b02847openalex-snapshot
Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures
inferred← citeshttps://doi.org/10.1021/acsaelm.1c00729openalex-snapshot
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
inferred← citeshttps://doi.org/10.1021/acsami.0c03259openalex-snapshot
Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization
inferred← citeshttps://doi.org/10.1021/acsami.2c13648openalex-snapshot
Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs
inferred← citeshttps://doi.org/10.1021/acsami.6b12301openalex-snapshot
Four-Dimensional Ultrafast Electron Microscopy: Insights into an Emerging Technique
inferred← citeshttps://doi.org/10.1021/acsanm.0c03227openalex-snapshot
InGaN/GaN Quantum Dot Light-Emitting Diodes on Silicon with Coalesced GaN Nanowire Buffer Layer
inferred← citeshttps://doi.org/10.1021/acsanm.1c04581openalex-snapshot
Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology
inferred← citeshttps://doi.org/10.1021/acsanm.2c04117openalex-snapshot
Low-Temperature Selective Area Epitaxy of GaN Nanowires: Toward a Top-Surface Morphology Controllable, Fully Epitaxial Nanophotonic Platform
inferred← citeshttps://doi.org/10.1021/acsanm.3c05304openalex-snapshot
Gallium Nitride Nanomaterials and Color Centers for Quantum Technologies
inferred← citeshttps://doi.org/10.1021/acsaom.3c00038openalex-snapshot
Anisotropic Two-Photon Excited Photoluminescence and Optical Constants of InGaN Nanowires
inferred← citeshttps://doi.org/10.1021/acsenergylett.7b01330openalex-snapshot
Imaging Localized Energy States in Silicon-Doped InGaN Nanowires Using 4D Electron Microscopy
inferred← citeshttps://doi.org/10.1021/acsnano.5b04158openalex-snapshot
Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect
inferred← citeshttps://doi.org/10.1021/acsnano.5b07232openalex-snapshot
Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism
inferred← citeshttps://doi.org/10.1021/acsnano.5c07003openalex-snapshot
A Quasi Solid-State Hydrogel/InGaN Nanorod Heterostructure-Enabled Amphibious Sensor for Stable and Cross-Medium Optical Sensing and Monitoring
inferred← citeshttps://doi.org/10.1021/acsnano.6c08302openalex-snapshot
Advances in GaN Nanowire-Based Optoelectronic Devices
inferred← citeshttps://doi.org/10.1021/acsomega.3c06302openalex-snapshot
Simultaneous Growth Strategy of High-Optical-Efficiency GaN NWs on a Wide Range of Substrates by Pulsed Laser Deposition
inferred← citeshttps://doi.org/10.1021/acsomega.7b00843openalex-snapshot
Fabrication of Phosphor-Free III-Nitride Nanowire Light-Emitting Diodes on Metal Substrates for Flexible Photonics
inferred← citeshttps://doi.org/10.1021/acsphotonics.5b00696openalex-snapshot
Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors
inferred← citeshttps://doi.org/10.1021/acsphotonics.6b00457openalex-snapshot
True Yellow Light-Emitting Diodes as Phosphor for Tunable Color-Rendering Index Laser-Based White Light
inferred← citeshttps://doi.org/10.1021/acsphotonics.7b01047openalex-snapshot
Ultraviolet-C Photodetector Fabricated Using Si-Doped n-AlGaN Nanorods Grown by MOCVD
inferred← citeshttps://doi.org/10.1021/am303056vopenalex-snapshot
High-Quality Uniaxial InxGa1–xN/GaN Multiple Quantum Well (MQW) Nanowires (NWs) on Si(111) Grown by Metal-Organic Chemical Vapor Deposition (MOCVD) and Light-Emitting Diode (LED) Fabrication
inferred← citeshttps://doi.org/10.1021/am401234aopenalex-snapshot
Zn2GeO4 Nanowires As Efficient Electron Injection Material for Electroluminescent Devices
inferred← citeshttps://doi.org/10.1021/cg300764fopenalex-snapshot
Growth Mechanism of Catalyst-Free and Mask-Free Heteroepitaxial GaN Submicrometer- and Micrometer-Sized Rods under Biaxial Strain: Variation of Surface Energy and Adatom Kinetics
inferred← citeshttps://doi.org/10.1021/cg301181bopenalex-snapshot
Indium Incorporation in InxGa1–xN/GaN Nanowire Heterostructures Investigated by Line-of-Sight Quadrupole Mass Spectrometry
inferred← citeshttps://doi.org/10.1021/cg4000928openalex-snapshot
The Origin of Shape, Orientation, and Structure of Spontaneously Formed Wurtzite GaN Nanorods on Cubic Si(001) Surface
inferred← citeshttps://doi.org/10.1021/jp311685xopenalex-snapshot
Effect of Thermal Annealing in Ammonia on the Properties of InGaN Nanowires with Different Indium Concentrations
inferred← citeshttps://doi.org/10.1021/jp405963aopenalex-snapshot
Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution
inferred← citeshttps://doi.org/10.1021/nl103649dopenalex-snapshot
Auger Recombination in III-Nitride Nanowires and Its Effect on Nanowire Light-Emitting Diode Characteristics
inferred← citeshttps://doi.org/10.1021/nl104536xopenalex-snapshot
p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)
inferred← citeshttps://doi.org/10.1021/nl202626yopenalex-snapshot
Exciton Scattering Mechanism in a Single Semiconducting MgZnO Nanorod
inferred← citeshttps://doi.org/10.1021/nl202686nopenalex-snapshot
M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices
inferred← citeshttps://doi.org/10.1021/nl203091fopenalex-snapshot
Spin Relaxation in InGaN Quantum Disks in GaN Nanowires
inferred← citeshttps://doi.org/10.1021/nl203529hopenalex-snapshot
On-Nanowire Spatial Band Gap Design for White Light Emission
inferred← citeshttps://doi.org/10.1021/nl203860bopenalex-snapshot
Controlling Electron Overflow in Phosphor-Free InGaN/GaN Nanowire White Light-Emitting Diodes
inferred← citeshttps://doi.org/10.1021/nl203982popenalex-snapshot
Polarization-Induced pn Diodes in Wide-Band-Gap Nanowires with Ultraviolet Electroluminescence
inferred← citeshttps://doi.org/10.1021/nl303178uopenalex-snapshot
Probing Quantum Confinement within Single Core–Multishell Nanowires
inferred← citeshttps://doi.org/10.1021/nl303510hopenalex-snapshot
On-Chip Optical Interconnects Made with Gallium Nitride Nanowires
inferred← citeshttps://doi.org/10.1021/nl400060jopenalex-snapshot
Room-Temperature Polariton Lasing from GaN Nanowire Array Clad by Dielectric Microcavity
inferred← citeshttps://doi.org/10.1021/nl400906ropenalex-snapshot
Coaxial InxGa1–xN/GaN Multiple Quantum Well Nanowire Arrays on Si(111) Substrate for High-Performance Light-Emitting Diodes
inferred← citeshttps://doi.org/10.1021/nl401277yopenalex-snapshot
Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering
inferred← citeshttps://doi.org/10.1021/nl4015183openalex-snapshot
Luminous Efficiency of Axial InxGa1–xN/GaN Nanowire Heterostructures: Interplay of Polarization and Surface Potentials
inferred← citeshttps://doi.org/10.1021/nl402145ropenalex-snapshot
Polytypic InP Nanolaser Monolithically Integrated on (001) Silicon
inferred← citeshttps://doi.org/10.1021/nl4030165openalex-snapshot
Breaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes
inferred← citeshttps://doi.org/10.1021/nl403341xopenalex-snapshot
Enhanced Luminescence Properties of InAs–InAsP Core–Shell Nanowires
inferred← citeshttps://doi.org/10.1021/nl403687hopenalex-snapshot
Ultralong and Defect-Free GaN Nanowires Grown by the HVPE Process
inferred← citeshttps://doi.org/10.1021/nl404376mopenalex-snapshot
Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography
inferred← citeshttps://doi.org/10.1021/nl404414ropenalex-snapshot
Visible-Wavelength Polarized-Light Emission with Small-Diameter InN Nanowires
inferred← citeshttps://doi.org/10.1021/nl404794vopenalex-snapshot
Single Nanowire Light-Emitting Diodes Using Uniaxial and Coaxial InGaN/GaN Multiple Quantum Wells Synthesized by Metalorganic Chemical Vapor Deposition
inferred← citeshttps://doi.org/10.1021/nl501022vopenalex-snapshot
Axial Diffusion Barriers in Near-Infrared Nanopillar LEDs
inferred← citeshttps://doi.org/10.1021/nl5015603openalex-snapshot
Monolithic Electrically Injected Nanowire Array Edge-Emitting Laser on (001) Silicon
inferred← citeshttps://doi.org/10.1021/nl503616wopenalex-snapshot
Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires
inferred← citeshttps://doi.org/10.1021/nl503826kopenalex-snapshot
Structural and Optical Properties of Disc-in-Wire InGaN/GaN LEDs
inferred← citeshttps://doi.org/10.1021/nl5041989openalex-snapshot
Formation and Nature of InGaN Quantum Dots in GaN Nanowires
inferred← citeshttps://doi.org/10.1021/nl504447jopenalex-snapshot
High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)
inferred← citeshttps://doi.org/10.1021/nl504778sopenalex-snapshot
Monitoring the Formation of Nanowires by Line-of-Sight Quadrupole Mass Spectrometry: A Comprehensive Description of the Temporal Evolution of GaN Nanowire Ensembles
inferred← citeshttps://doi.org/10.1021/nn200521ropenalex-snapshot
Epitaxial Growth of InGaN Nanowire Arrays for Light Emitting Diodes
inferred← citeshttps://doi.org/10.1021/ph500415copenalex-snapshot
Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures
inferred← citeshttps://doi.org/10.1038/ncomms2691openalex-snapshot
Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire
inferred← citeshttps://doi.org/10.1038/nnano.2012.190openalex-snapshot
Spatially resolved Hall effect measurement in a single semiconductor nanowire
inferred← citeshttps://doi.org/10.1038/nphoton.2011.253openalex-snapshot
Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates
inferred← citeshttps://doi.org/10.1038/s41467-018-06035-1openalex-snapshot
Room-temperature polarized spin-photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects
inferred← citeshttps://doi.org/10.1038/s41598-017-15447-wopenalex-snapshot
A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations
inferred← citeshttps://doi.org/10.1038/s41598-018-25473-xopenalex-snapshot
Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
inferred← citeshttps://doi.org/10.1038/s41598-020-59442-0openalex-snapshot
Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum
inferred← citeshttps://doi.org/10.1038/s43246-020-00054-6openalex-snapshot
Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
inferred← citeshttps://doi.org/10.1038/srep07744openalex-snapshot
Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers
inferred← citeshttps://doi.org/10.1038/srep18020openalex-snapshot
Emission color-tuned light-emitting diode microarrays of nonpolar InxGa1–xN/GaN multishell nanotube heterostructures
inferred← citeshttps://doi.org/10.1038/srep40893openalex-snapshot
Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications
inferred← citeshttps://doi.org/10.1039/c2ce06485eopenalex-snapshot
The evolution of Ge nanostructures growth on silicon substrate by reduction of GeO2
inferred← citeshttps://doi.org/10.1039/c3cc47239fopenalex-snapshot
Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties
inferred← citeshttps://doi.org/10.1039/c3nr00387fopenalex-snapshot
Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy
inferred← citeshttps://doi.org/10.1039/c3nr06692dopenalex-snapshot
Metal-seeded growth of III–V semiconductor nanowires: towards gold-free synthesis
inferred← citeshttps://doi.org/10.1039/c3tc31045kopenalex-snapshot
Fe doped silicon oxynitride microwires: surface plasmon polariton enhanced fluorescence and tunable long-wavelength red-emission
inferred← citeshttps://doi.org/10.1039/c3tc32212bopenalex-snapshot
Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m- and r-planes of a single n-GaN nanowire using metalorganic chemical vapor deposition
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