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Normal-incidence InAs/In0.15Ga0.85As quantum dots-in-a-well detector operating in the long-wave infrared atmospheric window (8–12 μm)

https://doi.org/10.1063/1.1760832
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1016/s0040-6090(97)00237-xopenalex-snapshot
Peculiarities of the MBE growth physics and technology of narrow-gap II–VI compounds
inferredcites →https://doi.org/10.1063/1.111232openalex-snapshot
High performance InGaAs/GaAs quantum well infrared photodetectors
inferredcites →https://doi.org/10.1063/1.122349openalex-snapshot
Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
inferredcites →https://doi.org/10.1063/1.125400openalex-snapshot
Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
inferredcites →https://doi.org/10.1063/1.1326044openalex-snapshot
Midinfrared photoconductivity of Ge/Si self-assembled quantum dots
inferredcites →https://doi.org/10.1063/1.1337649openalex-snapshot
Quantum dot infrared photodetectors
inferredcites →https://doi.org/10.1063/1.1347006openalex-snapshot
Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer
inferredcites →https://doi.org/10.1063/1.1356430openalex-snapshot
Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region
inferredcites →https://doi.org/10.1063/1.1417513openalex-snapshot
Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1−xAs strain-relieving quantum wells
inferredcites →https://doi.org/10.1063/1.1455130openalex-snapshot
Evaluation of the fundamental properties of quantum dot infrared detectors
inferredcites →https://doi.org/10.1063/1.1498009openalex-snapshot
High-responsivity, normal-incidence long-wave infrared (λ∼7.2 μm) InAs/In0.15Ga0.85As dots-in-a-well detector
inferredcites →https://doi.org/10.1063/1.1540240openalex-snapshot
In 0.6 Ga 0.4 As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
inferredcites →https://doi.org/10.1063/1.1567806openalex-snapshot
Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K
inferredcites →https://doi.org/10.1063/1.1615838openalex-snapshot
Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector
inferredcites →https://doi.org/10.1103/physrevb.42.8947openalex-snapshot
Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases
inferredcites →https://doi.org/10.1103/physrevb.44.10945openalex-snapshot
Intrinsic mechanism for the poor luminescence properties of quantum-box systems
inferredcites →https://doi.org/10.1109/3.766837openalex-snapshot
Self-assembled InAs-GaAs quantum-dot intersubband detectors
inferredcites →https://doi.org/10.1116/1.1461370openalex-snapshot
Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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A cross-sectional scanning tunneling microscopy study of a quantum dot infrared photodetector structure
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Electronic structure of double stacked InAs∕GaAs quantum dots: Experiment and theory
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