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On the “U-shaped” continuum of band edge states at the Si/SiO2 interface

https://doi.org/10.1063/1.3664772
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1063/1.2778354openalex-snapshot
Carrier capture at the SiO2–Si interface: A physical model
inferredcites →https://doi.org/10.1063/1.329023openalex-snapshot
Theory of continuously distributed trap states at Si-SiO2 interfaces
inferredcites →https://doi.org/10.1063/1.3597298openalex-snapshot
Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states
inferredcites →https://doi.org/10.1103/physrevb.21.5733openalex-snapshot
Theory of the electronic structure of the Si-Si O2 interface
inferredcites →https://doi.org/10.1109/16.119021openalex-snapshot
Spectroscopic charge pumping: A new procedure for measuring interface trap distributions on MOS transistors
inferredcites →https://doi.org/10.1109/t-ed.1969.16744openalex-snapshot
Charge pumping in MOS devices
inferredcites →https://doi.org/10.1109/t-ed.1984.21472openalex-snapshot
A reliable approach to charge-pumping measurements in MOS transistors
inferredcites →https://doi.org/10.1116/1.590301openalex-snapshot
What can electron paramagnetic resonance tell us about the Si/SiO2 system?
inferredcites →https://doi.org/10.1149/1.2096133openalex-snapshot
Elimination and Generation of Si ‐ SiO2 Interface Traps by Low Temperature Hydrogen Annealing

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4813220openalex-extracted
Temperature Dependence on Surface Properties for Te-Doped GASB Crystals with N2-H2 Remote Plasma Nitridation
inferred← citeshttps://doi.org/10.1016/j.sse.2015.05.043openalex-snapshot
Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors
inferred← citeshttps://doi.org/10.1016/j.sse.2022.108302openalex-snapshot
Interface traps density extraction through transient measurements in junctionless transistors
inferred← citeshttps://doi.org/10.1016/j.vacuum.2024.113580openalex-snapshot
Effect of N2-H2 remote plasma nitridation temperature on surface properties of Te-doped GaSb crystals
inferred← citeshttps://doi.org/10.1063/1.4790157openalex-snapshot
A possible origin of core-level shift in SiO2/Si stacks
inferred← citeshttps://doi.org/10.1063/1.5002173openalex-snapshot
Surface cleaning and pure nitridation of GaSb by in-situ plasma processing
inferred← citeshttps://doi.org/10.1063/5.0135226openalex-snapshot
Theory of slow traps and random telegraph signals in ultra-small planar MOSFETs
inferred← citeshttps://doi.org/10.1063/5.0184042openalex-snapshot
Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors
inferred← citeshttps://doi.org/10.1088/1361-6463/aaa58copenalex-snapshot
Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor
inferred← citeshttps://doi.org/10.1088/1361-6528/aa6a9dopenalex-snapshot
Reduction of interface traps between poly-Si and SiO 2 layers through the dielectric recovery effect during delayed pulse bias stress
inferred← citeshttps://doi.org/10.1109/icicdt.2018.8399782openalex-snapshot
Non-tunneling origin of the 1/f noise in SiC MOSFET
inferred← citeshttps://doi.org/10.1109/ispsd.2012.6229085openalex-snapshot
Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors
inferred← citeshttps://doi.org/10.1109/ted.2021.3097008openalex-snapshot
The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs
inferred← citeshttps://doi.org/10.1109/vlsi-tsa.2015.7117555openalex-snapshot
Capture cross section: A variable duty cycle charge pumping study
inferred← citeshttps://doi.org/10.20903/csnmbs.masa.2013.34.1-2.38openalex-snapshot
HYSTERESIS-LIKE FLATBAND VOLTAGE INSTABILITIES IN Al/Ta2O5-SiO2/Si STRUCTURES AND THEIR CONNECTION WITH J-V CHARACTERISTICS
inferred← citeshttps://doi.org/10.35848/1882-0786/abd13eopenalex-snapshot
Non-equilibrium engineering of chemically grown SiO2/Si by UV nanosecond pulsed laser annealing from the viewpoint of bias temperature instability sources
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