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A unified approach to modelling the charge state of monatomic hydrogen and other defects in crystalline silicon

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pip.779openalex-snapshot
Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline silicon
inferredcites →https://doi.org/10.1007/978-1-4899-2025-6openalex-snapshot
Hydrogen in Disordered and Amorphous Solids
inferredcites →https://doi.org/10.1007/978-1-4899-2025-6_8openalex-snapshot
Hydrogen Passivation of Polycrystalline Silicon
inferredcites →https://doi.org/10.1007/bf00615975openalex-snapshot
Hydrogen in crystalline semiconductors
inferredcites →https://doi.org/10.1007/bf00620536openalex-snapshot
Chromium and chromium-boron pairs in silicon
inferredcites →https://doi.org/10.1007/s003390050968openalex-snapshot
Iron and its complexes in silicon
inferredcites →https://doi.org/10.1016/0038-1098(77)91214-5openalex-snapshot
Recombination in semiconductors
inferredcites →https://doi.org/10.1016/0375-9601(83)90794-6openalex-snapshot
Atomic and molecular hydrogen in the Si lattice
inferredcites →https://doi.org/10.1016/0378-4363(83)90263-2openalex-snapshot
Electronically controlled reactions of interstitial iron in silicon
inferredcites →https://doi.org/10.1016/j.egypro.2011.06.100openalex-snapshot
Impact of Hydrogen Concentration on the Regeneration of Light Induced Degradation
inferredcites →https://doi.org/10.1016/j.egypro.2013.07.317openalex-snapshot
Hydrogen Passivation of B-O Defects in Czochralski Silicon
inferredcites →https://doi.org/10.1016/j.solmat.2014.06.027openalex-snapshot
Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes
inferredcites →https://doi.org/10.1063/1.116574openalex-snapshot
Identification of Cr in p-type silicon using the minority carrier lifetime measurement by the surface photovoltage method
inferredcites →https://doi.org/10.1063/1.1544431openalex-snapshot
Electronic properties of the metastable defect in boron-doped Czochralski silicon: Unambiguous determination by advanced lifetime spectroscopy
inferredcites →https://doi.org/10.1063/1.1812833openalex-snapshot
Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
inferredcites →https://doi.org/10.1063/1.1823587openalex-snapshot
Dynamics of light-induced FeB pair dissociation in crystalline silicon
inferredcites →https://doi.org/10.1063/1.2140584openalex-snapshot
Electronically activated boron-oxygen-related recombination centers in crystalline silicon
inferredcites →https://doi.org/10.1063/1.2822452openalex-snapshot
Recombination activity of interstitial chromium and chromium-boron pairs in silicon
inferredcites →https://doi.org/10.1063/1.2903895openalex-snapshot
Imaging interstitial iron concentrations in boron-doped crystalline silicon using photoluminescence
inferredcites →https://doi.org/10.1063/1.345414openalex-snapshot
Intrinsic concentration, effective densities of states, and effective mass in silicon
inferredcites →https://doi.org/10.1063/1.4768688openalex-snapshot
Permanent recovery of electron lifetime in pre-annealed silicon samples: A model based on Ostwald ripening
inferredcites →https://doi.org/10.1063/1.4816694openalex-snapshot
Empirical determination of the energy band gap narrowing in highly doped n+ silicon
inferredcites →https://doi.org/10.1063/1.4863674openalex-snapshot
Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon
inferredcites →https://doi.org/10.1063/1.4881497openalex-snapshot
Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon
inferredcites →https://doi.org/10.1088/0370-1298/65/8/303openalex-snapshot
A Note on the Theory of Semiconductors
inferredcites →https://doi.org/10.1088/0370-1298/66/7/118openalex-snapshot
Semiconductor Statistics
inferredcites →https://doi.org/10.1088/0370-1301/70/3/302openalex-snapshot
A Contribution to the Recombination Statistics of Excess Carriers in Semiconductors
inferredcites →https://doi.org/10.1103/physrev.107.392openalex-snapshot
Statistics of the Charge Distribution for a Localized Flaw in a Semiconductor
inferredcites →https://doi.org/10.1103/physrev.109.1103openalex-snapshot
Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge Conditions
inferredcites →https://doi.org/10.1103/physrev.87.387openalex-snapshot
Electron-Hole Recombination in Germanium
inferredcites →https://doi.org/10.1103/physrev.87.835openalex-snapshot
Statistics of the Recombinations of Holes and Electrons
inferredcites →https://doi.org/10.1103/physrevb.1.800openalex-snapshot
Recombination-Generation and Optical Properties of Gold Acceptor in Silicon
inferredcites →https://doi.org/10.1103/physrevb.39.10791openalex-snapshot
Theory of hydrogen diffusion and reactions in crystalline silicon
inferredcites →https://doi.org/10.1103/physrevb.40.11644openalex-snapshot
Hydrogen bonding and diffusion in crystalline silicon
inferredcites →https://doi.org/10.1103/physrevb.40.5867openalex-snapshot
Modeling of hydrogen diffusion inn- andp-type silicon
inferredcites →https://doi.org/10.1103/physrevb.44.6141openalex-snapshot
Hydrogen diffusion and passivation processes inp- andn-type crystalline silicon
inferredcites →https://doi.org/10.1103/physrevb.64.125209openalex-snapshot
Energy levels of isolated interstitial hydrogen in silicon
inferredcites →https://doi.org/10.1103/physrevb.69.024107openalex-snapshot
Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon
inferredcites →https://doi.org/10.1103/physrevlett.60.2761openalex-snapshot
Theory of Hydrogen Diffusion and Reactions in Crystalline Silicon
inferredcites →https://doi.org/10.1103/physrevlett.93.055504openalex-snapshot
Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells
inferredcites →https://doi.org/10.1109/jphotov.2013.2281732openalex-snapshot
Advanced Bulk Defect Passivation for Silicon Solar Cells
inferredcites →https://doi.org/10.1109/jphotov.2014.2339494openalex-snapshot
Manipulation of Hydrogen Charge States for Passivation of P-Type Wafers in Photovoltaics
inferredcites →https://doi.org/10.1109/t-ed.1981.20333openalex-snapshot
Effect of zinc impurity on silicon solar-cell efficiency
inferredcites →https://doi.org/10.1109/wcpec.2006.279358openalex-snapshot
Activation Energy for the Hydrogenation of Iron in P-Type Crystalline Silicon Wafers
inferredcites →https://doi.org/10.1109/wcpec.2006.279611openalex-snapshot
A New Approach to Prevent the Negative Impact of the Metastable Defect in Boron Doped CZ Silicon Solar Cells
inferredcites →https://doi.org/10.1146/annurev.matsci.36.010705.155428openalex-snapshot
HYDROGEN IN SEMICONDUCTORS
inferredcites →https://doi.org/10.15488/7905openalex-snapshot
Boron-oxygen-related recombination centers in crystalline silicon and the effects of dopant-compensation
inferredcites →https://doi.org/10.4229/eupvsec20142014-2bp.1.2openalex-snapshot
High Speed Regeneration of BO-Defects: Improving Long-Term Solar Cell Performance within Seconds

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4653481openalex-extracted
inferred← citeshttps://doi.org/10.1002/9781119578826.ch10openalex-snapshot
Hydrogenation
inferred← citeshttps://doi.org/10.1002/pip.2832openalex-snapshot
Degradation and regeneration in mc‐Si after different gettering steps
inferred← citeshttps://doi.org/10.1002/pip.2954openalex-snapshot
Understanding the light‐induced degradation at elevated temperatures: Similarities between multicrystalline and floatzone p‐type silicon
inferred← citeshttps://doi.org/10.1002/pip.3230openalex-snapshot
Defect engineering of p‐type silicon heterojunction solar cells fabricated using commercial‐grade low‐lifetime silicon wafers
inferred← citeshttps://doi.org/10.1002/pip.3240openalex-snapshot
Development of advanced hydrogenation processes for silicon solar cells via an improved understanding of the behaviour of hydrogen in silicon
inferred← citeshttps://doi.org/10.1002/pip.70112openalex-snapshot
Understanding Light‐Soaking Effects in Silicon Solar Cells by Considering Charge Carrier‐Enhanced Atomic Hydrogen Release
inferred← citeshttps://doi.org/10.1002/pssa.201700305openalex-snapshot
The role of hydrogenation and gettering in enhancing the efficiency of next‐generation Si solar cells: An industrial perspective
inferred← citeshttps://doi.org/10.1002/pssa.201800611openalex-snapshot
Evidence for Molybdenum‐Hydrogen Bonding in p‐Type Silicon upon Annealing under Illumination
inferred← citeshttps://doi.org/10.1002/pssa.202200142openalex-snapshot
Formation Dynamics of BH and GaH‐Pairs in Crystalline Silicon During Dark Annealing
inferred← citeshttps://doi.org/10.1002/pssb.202100670openalex-snapshot
Dynamics of Hydrogen in Silicon at Finite Temperatures from First Principles
inferred← citeshttps://doi.org/10.1002/pssc.201600033openalex-snapshot
Activation energies of the InSi‐Siidefect transitions obtained by carrier lifetime measurements
inferred← citeshttps://doi.org/10.1002/pssr.202000520openalex-snapshot
The Role of Charge and Recombination‐Enhanced Defect Reaction Effects in the Dissociation of FeB Pairs in p‐Type Silicon under Carrier Injection
inferred← citeshttps://doi.org/10.1002/pssr.202000584openalex-snapshot
Insights into the Hydrogen‐Related Mechanism behind Defect Formation during Light‐ and Elevated‐Temperature‐Induced Degradation
inferred← citeshttps://doi.org/10.1002/pssr.202100483openalex-snapshot
Modeling the Charge State of Monatomic Hydrogen and Other Defects with Arbitrary Concentrations in Crystalline Silicon
inferred← citeshttps://doi.org/10.1002/pssr.202200297openalex-snapshot
The Dissociation of Gallium–Hydrogen Pairs in Crystalline Silicon during Illuminated Annealing
inferred← citeshttps://doi.org/10.1002/smll.202509751openalex-snapshot
Increased Series Resistance in the Laser‐Enhanced Contacts of Polysilicon‐Based Solar Cells from an Additional Light Anneal
inferred← citeshttps://doi.org/10.1002/solr.201600028openalex-snapshot
Modulation of Carrier‐Induced Defect Kinetics in Multi‐Crystalline Silicon PERC Cells Through Dark Annealing
inferred← citeshttps://doi.org/10.1002/solr.201700129openalex-snapshot
Instability of Increased Contact Resistance in Silicon Solar Cells Following Post‐Firing Thermal Processes
inferred← citeshttps://doi.org/10.1002/solr.202201107openalex-snapshot
Hydrogen Reactions in c‐Si:B During Illumination at Room Temperature
inferred← citeshttps://doi.org/10.1002/solr.202400457openalex-snapshot
Deciphering the Role of Hydrogen in the Degradation of Silicon Solar Cells under Light and Elevated Temperature
inferred← citeshttps://doi.org/10.1007/s12633-022-01831-3openalex-snapshot
Potential Mechanism of LeTID Dynamic Behavior Dependent on Firing and Hydrogenation with Electron Injection
inferred← citeshttps://doi.org/10.1016/j.egypro.2015.07.090openalex-snapshot
Light-induced Degradation and Regeneration in n-type Silicon
inferred← citeshttps://doi.org/10.1016/j.egypro.2015.07.092openalex-snapshot
Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon
inferred← citeshttps://doi.org/10.1016/j.egypro.2015.07.113openalex-snapshot
Advanced Hydrogenation of Dislocation Clusters and Boron-oxygen Defects in Silicon Solar Cells
inferred← citeshttps://doi.org/10.1016/j.egypro.2016.07.008openalex-snapshot
Modelling Kinetics of the Boron-Oxygen Defect System
inferred← citeshttps://doi.org/10.1016/j.egypro.2016.07.071openalex-snapshot
Light-induced Recovery of Effective Carrier Lifetime in Boron-doped Czochralski Silicon at Room Temperature
inferred← citeshttps://doi.org/10.1016/j.jallcom.2016.12.286openalex-snapshot
Controlled cooling process for efficient hydrogenation
inferred← citeshttps://doi.org/10.1016/j.solener.2018.06.044openalex-snapshot
UV-induced degradation in multicrystalline PERC cell and module
inferred← citeshttps://doi.org/10.1016/j.solmat.2015.06.012openalex-snapshot
From simulation to experiment: Understanding BO-regeneration kinetics
inferred← citeshttps://doi.org/10.1016/j.solmat.2015.09.011openalex-snapshot
Direct comparison of the electrical properties of multicrystalline silicon materials for solar cells: conventional p-type, n-type and high performance p-type
inferred← citeshttps://doi.org/10.1016/j.solmat.2015.11.013openalex-snapshot
Investigations on accelerated processes for the boron–oxygen defect in p-type Czochralski silicon
inferred← citeshttps://doi.org/10.1016/j.solmat.2017.05.066openalex-snapshot
Kinetics of carrier-induced degradation at elevated temperature in multicrystalline silicon solar cells
inferred← citeshttps://doi.org/10.1016/j.solmat.2017.06.041openalex-snapshot
Multiple pathways for permanent deactivation of boron-oxygen defects in p-type silicon
inferred← citeshttps://doi.org/10.1016/j.solmat.2018.04.036openalex-snapshot
Hydrogen induced contact resistance in PERC solar cells
inferred← citeshttps://doi.org/10.1016/j.solmat.2018.07.029openalex-snapshot
Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review
inferred← citeshttps://doi.org/10.1016/j.solmat.2019.02.036openalex-snapshot
Role of post-metallization anneal sequence and forming gas anneal to mitigate light and elevated temperature induced degradation of multicrystalline silicon solar cells
inferred← citeshttps://doi.org/10.1016/j.solmat.2019.110258openalex-snapshot
24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design
inferred← citeshttps://doi.org/10.1016/j.solmat.2019.110353openalex-snapshot
Hydrogen-induced degradation: Explaining the mechanism behind light- and elevated temperature-induced degradation in n- and p-type silicon
inferred← citeshttps://doi.org/10.1016/j.solmat.2022.111888openalex-snapshot
An industrial scale solution to achieving light-induced degradation (LID) free silicon solar systems: >5% performance gain at system level with advanced hydrogenation technology
inferred← citeshttps://doi.org/10.1016/j.solmat.2023.112245openalex-snapshot
Assessing the stability of p+ and n+ polysilicon passivating contacts with various capping layers on p-type wafers
inferred← citeshttps://doi.org/10.1016/j.solmat.2023.112462openalex-snapshot
Understanding the impact of the cooling ramp of the fast-firing process on light- and elevated-temperature-induced degradation
inferred← citeshttps://doi.org/10.1016/j.solmat.2024.112789openalex-snapshot
Light-activated surface passivation for more efficient silicon heterojunction solar cells: Origin, physics and stability
inferred← citeshttps://doi.org/10.1016/j.solmat.2025.113432openalex-snapshot
Review on hydrogen in silicon solar cells: From its origin to its detrimental effects
inferred← citeshttps://doi.org/10.1016/j.solmat.2026.114446openalex-snapshot
Impact of illumination on the effective diffusivity of hydrogen in n- and p-type crystalline silicon
inferred← citeshttps://doi.org/10.1021/acsami.0c17549openalex-snapshot
On the Correlation between Light-Induced Degradation and Minority Carrier Traps in Boron-Doped Czochralski Silicon
inferred← citeshttps://doi.org/10.1021/acsomega.3c07568openalex-snapshot
Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions
inferred← citeshttps://doi.org/10.1021/jacs.5c13336openalex-snapshot
Generalized A(n)BC Recombination Model in Semiconductors with Multilevel Defects
inferred← citeshttps://doi.org/10.1063/1.4901831openalex-snapshot
Hydrogen passivation of interstitial iron in boron-doped multicrystalline silicon during annealing
inferred← citeshttps://doi.org/10.1063/1.4929757openalex-snapshot
Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon
inferred← citeshttps://doi.org/10.1063/1.4941387openalex-snapshot
Influence of the formation- and passivation rate of boron-oxygen defects for mitigating carrier-induced degradation in silicon within a hydrogen-based model
inferred← citeshttps://doi.org/10.1063/1.4944788openalex-snapshot
Upgraded metallurgical-grade silicon solar cells with efficiency above 20%
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Synchrotron-based investigation of transition-metal getterability in n-type multicrystalline silicon
inferred← citeshttps://doi.org/10.1063/1.4983024openalex-snapshot
Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
inferred← citeshttps://doi.org/10.1063/1.5016854openalex-snapshot
Modelling of hydrogen transport in silicon solar cell structures under equilibrium conditions
inferred← citeshttps://doi.org/10.1063/1.5049289openalex-snapshot
Effect of carrier-induced hydrogenation on the passivation of the poly-Si/SiOx/c-Si interface
inferred← citeshttps://doi.org/10.1063/1.5049325openalex-snapshot
A generalized model for boron-oxygen related light-induced degradation in crystalline silicon
inferred← citeshttps://doi.org/10.1063/1.5049328openalex-snapshot
Investigation on the influence of illumination on the diffusion of hydrogen into crystalline silicon
inferred← citeshttps://doi.org/10.1063/5.0039214openalex-snapshot
Efficiency enhancement of p-type multi-crystalline solar cells in different efficiency grades by hydrogenation with electron injection
inferred← citeshttps://doi.org/10.1063/5.0215089openalex-snapshot
Doping dependence of boron–hydrogen dynamics in crystalline silicon
inferred← citeshttps://doi.org/10.1063/5.0300191openalex-snapshot
Effective hydrogen diffusivity in n- and p-type crystalline silicon from 300 to 450 °C
inferred← citeshttps://doi.org/10.1071/ch18271openalex-snapshot
Overcoming the Challenges of Hydrogenation in Silicon Solar Cells*
inferred← citeshttps://doi.org/10.1088/1361-6463/abf807openalex-snapshot
Passivation of thermally-induced defects with hydrogen in float-zone silicon
inferred← citeshttps://doi.org/10.1103/physrevmaterials.9.024601openalex-snapshot
Electronic structure and energy landscape of B Si Si i related defects
inferred← citeshttps://doi.org/10.1109/jphotov.2015.2494691openalex-snapshot
Implications of Accelerated Recombination-Active Defect Complex Formation for Mitigating Carrier-Induced Degradation in Silicon
inferred← citeshttps://doi.org/10.1109/jphotov.2016.2556981openalex-snapshot
Engineering Solutions and Root-Cause Analysis for Light-Induced Degradation in p-Type Multicrystalline Silicon PERC Modules
inferred← citeshttps://doi.org/10.1109/jphotov.2017.2695496openalex-snapshot
Evolution of LeTID Defects in p-Type Multicrystalline Silicon During Degradation and Regeneration
inferred← citeshttps://doi.org/10.1109/jphotov.2020.3025240openalex-snapshot
Temporary Recovery of the Defect Responsible for Light- and Elevated Temperature-Induced Degradation: Insights Into the Physical Mechanisms Behind LeTID
inferred← citeshttps://doi.org/10.1109/jphotov.2023.3267173openalex-snapshot
On the Conversion Between Recombination Rates and Electronic Defect Parameters in Semiconductors
inferred← citeshttps://doi.org/10.1109/pvsc.2015.7355689openalex-snapshot
Implications of accelerated B-O complex formation for mitigating LID in Czochralski silicon
inferred← citeshttps://doi.org/10.1109/pvsc.2016.7749679openalex-snapshot
Time constants of degradation, regeneration, and destabilization of the B-O related defect
inferred← citeshttps://doi.org/10.1109/pvsc.2017.8366081openalex-snapshot
Experimental and theoretical study of the infrared emissivity of crystalline silicon solar cells
inferred← citeshttps://doi.org/10.1109/pvsc.2017.8366783openalex-snapshot
Laser Hydrogenation on Heavily Dislocated Cast-Mono Silicon Cells
inferred← citeshttps://doi.org/10.1109/pvsc.2018.8547585openalex-snapshot
Accurate defect recombination parameters: what are the limitations of current analyses?
inferred← citeshttps://doi.org/10.1109/pvsc.2018.8547977openalex-snapshot
Investigating the different degradation behavior of multicrystalline silicon PERC and Al-BSF solar cells
inferred← citeshttps://doi.org/10.1109/pvsc.2018.8548195openalex-snapshot
Impact of the impurity concentration on modulating charge state occupation in silicon
inferred← citeshttps://doi.org/10.1149/2162-8777/ad9be8openalex-snapshot
Light- and Elevated Temperature-Induced Degradation and Recovery from Silicon Wafers by the Impact of Hydrogen Treatment
inferred← citeshttps://doi.org/10.1155/2018/2439425openalex-snapshot
LEDs for the Implementation of Advanced Hydrogenation Using Hydrogen Charge-State Control
inferred← citeshttps://doi.org/10.3390/app8010010openalex-snapshot
Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells
inferred← citeshttps://doi.org/10.4028/www.scientific.net/ssp.242.102openalex-snapshot
Experimental Proof of the Slow Light-Induced Degradation Component in Compensated n-Type Silicon
inferred← citeshttps://doi.org/10.4028/www.scientific.net/ssp.242.230openalex-snapshot
Determination of Activation Energy of the Iron Acceptor Pair Association and Dissociation Reaction
inferred← citeshttps://doi.org/10.4028/www.scientific.net/ssp.242.80openalex-snapshot
BO-Related Defects: Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration
inferred← citeshttps://doi.org/10.4229/eupvsec20152015-2bo.3.6openalex-snapshot
Comparison of Recombination Activity of Grain Boundaries in Various Multicrystalline Silicon Materials
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