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Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/1521-396x(200105)185:1<79::aid-pssa79>3.0.co;2-8openalex-snapshot
Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompatible Ion Sensors
inferredcites →https://doi.org/10.1002/adfm.200900590openalex-snapshot
Diamond Transistor Array for Extracellular Recording From Electrogenic Cells
inferredcites →https://doi.org/10.1002/adma.200904415openalex-snapshot
High‐Performance Top‐Gated Graphene‐Nanoribbon Transistors Using Zirconium Oxide Nanowires as High‐Dielectric‐Constant Gate Dielectrics
inferredcites →https://doi.org/10.1002/pssb.200404945openalex-snapshot
Valence and conduction band offsets of a ZrO2/SiOxNy/n‐Si CMOS gate stack: A combined photoemission and inverse photoemission study
inferredcites →https://doi.org/10.1002/pssr.201105024openalex-snapshot
Demonstration of diamond field effect transistors by AlN/diamond heterostructure
inferredcites →https://doi.org/10.1002/sia.1924openalex-snapshot
Determination of ZnO(0001) surface termination by x‐ray photoelectron spectroscopy at photoemission angles of 0° and 70°
inferredcites →https://doi.org/10.1007/s11664-010-1500-1openalex-snapshot
Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3
inferredcites →https://doi.org/10.1016/j.diamond.2007.11.007openalex-snapshot
Surface-channel MESFET with boron-doped contact layer
inferredcites →https://doi.org/10.1016/j.diamond.2007.12.030openalex-snapshot
Characteristics of boron δ-doped diamond for electronic applications
inferredcites →https://doi.org/10.1016/j.diamond.2008.02.015openalex-snapshot
Diamond MISFET based on boron delta-doped channel
inferredcites →https://doi.org/10.1016/j.tsf.2008.10.010openalex-snapshot
Hysteresis in metal insulator semiconductor structures with high temperature annealed ZrO2/SiOx layers
inferredcites →https://doi.org/10.1016/j.vacuum.2008.03.039openalex-snapshot
rf-Magnetron sputter deposited ZrO2 dielectrics for metal–insulator–semiconductor capacitors
inferredcites →https://doi.org/10.1016/s0039-6028(00)00375-7openalex-snapshot
Structure, microstructure and electronic characterisation of the Al2O3/SiO2 interface by electron spectroscopies
inferredcites →https://doi.org/10.1063/1.1391418openalex-snapshot
High temperature stability in lanthanum and zirconia-based gate dielectrics
inferredcites →https://doi.org/10.1063/1.1454231openalex-snapshot
Study on Zr-silicate interfacial layer of ZrO2 metal-insulator-semiconductor structure
inferredcites →https://doi.org/10.1063/1.1861122openalex-snapshot
GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
inferredcites →https://doi.org/10.1063/1.2168497openalex-snapshot
High carrier mobility on hydrogen terminated ⟨100⟩ diamond surfaces
inferredcites →https://doi.org/10.1063/1.2354327openalex-snapshot
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inferredcites →https://doi.org/10.1063/1.2764206openalex-snapshot
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inferredcites →https://doi.org/10.1063/1.2903103openalex-snapshot
High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator
inferredcites →https://doi.org/10.1063/1.3682760openalex-snapshot
Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces
inferredcites →https://doi.org/10.1063/1.369664openalex-snapshot
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
inferredcites →https://doi.org/10.1063/1.4770059openalex-snapshot
Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices
inferredcites →https://doi.org/10.1063/1.4772985openalex-snapshot
Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond
inferredcites →https://doi.org/10.1063/1.4798289openalex-snapshot
Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric
inferredcites →https://doi.org/10.1063/1.4819108openalex-snapshot
Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
inferredcites →https://doi.org/10.1063/1.4820143openalex-snapshot
Normally-off HfO2-gated diamond field effect transistors
inferredcites →https://doi.org/10.1088/0022-3727/47/24/245102openalex-snapshot
Diamond field effect transistors with a high-dielectric constant Ta 2 O 5 as gate material
inferredcites →https://doi.org/10.1088/0034-4885/42/10/001openalex-snapshot
Optical absorption and luminescence in diamond
inferredcites →https://doi.org/10.1088/0268-1242/18/2/305openalex-snapshot
Electrical properties of deposited ZrO2films on ZnO/n-Si substrates
inferredcites →https://doi.org/10.1109/55.43098openalex-snapshot
Power semiconductor device figure of merit for high-frequency applications
inferredcites →https://doi.org/10.1116/1.1418405openalex-snapshot
Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics
inferredcites →https://doi.org/10.1116/1.1806439openalex-snapshot
Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics
inferredcites →https://doi.org/10.1143/jjap.34.l551openalex-snapshot
Fermi Level Pinning in Metal-Insulator-Diamond Structures
inferredcites →https://doi.org/10.1143/jjap.51.090112openalex-snapshot
Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al 2 O 3 Passivation Layer
inferredcites →https://doi.org/10.1143/jjap.51.090114openalex-snapshot
Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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inferred← citeshttps://doi.org/10.1039/d4ta06757fopenalex-snapshot
Highly dispersed copper-based nanocomposite synthesis via spray pyrolysis: towards waste-to-hydrogen production through the water-gas shift reaction
inferred← citeshttps://doi.org/10.1039/d5cc04746copenalex-snapshot
Ti 3 C 2 T X -based Zr@MXene for CO 2 capture and conversion
inferred← citeshttps://doi.org/10.1039/d6ra04410gopenalex-snapshot
Biogenic E. coli EPS-capped Ag/ZrO 2 nanocomposites (Ag/ZrO 2 NCs): synthesis, characterization, and multitarget biomedical activity
inferred← citeshttps://doi.org/10.1063/1.4913597openalex-snapshot
Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures
inferred← citeshttps://doi.org/10.1063/1.4915297openalex-snapshot
Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling
inferred← citeshttps://doi.org/10.1063/1.4930294openalex-snapshot
Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors
inferred← citeshttps://doi.org/10.1063/1.4931123openalex-snapshot
Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor
inferred← citeshttps://doi.org/10.1063/1.4939650openalex-snapshot
Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond
inferred← citeshttps://doi.org/10.1063/1.4962851openalex-snapshot
High- k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors
inferred← citeshttps://doi.org/10.1063/1.4962854openalex-snapshot
Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors
inferred← citeshttps://doi.org/10.1063/1.4977007openalex-snapshot
Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications
inferred← citeshttps://doi.org/10.1063/1.4983091openalex-snapshot
Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator
inferred← citeshttps://doi.org/10.1063/1.4985066openalex-snapshot
Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters
inferred← citeshttps://doi.org/10.1063/1.5001070openalex-snapshot
Interfacial energy barrier height of Al2O3/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy
inferred← citeshttps://doi.org/10.1063/1.5002176openalex-snapshot
A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface
inferred← citeshttps://doi.org/10.1063/1.5003622openalex-snapshot
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
inferred← citeshttps://doi.org/10.1063/1.5037925openalex-snapshot
Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures
inferred← citeshttps://doi.org/10.1063/1.5055812openalex-snapshot
High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric
inferred← citeshttps://doi.org/10.1063/1.5066052openalex-snapshot
Radiofrequency performance of hydrogenated diamond MOSFETs with alumina
inferred← citeshttps://doi.org/10.1063/1.5126359openalex-snapshot
High temperature (300 °C) ALD grown Al2O3 on hydrogen terminated diamond: Band offset and electrical properties of the MOSFETs
inferred← citeshttps://doi.org/10.1063/5.0002120openalex-snapshot
Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3
inferred← citeshttps://doi.org/10.1063/5.0002768openalex-snapshot
2D hole gas mobility at diamond/insulator interface
inferred← citeshttps://doi.org/10.1063/5.0021785openalex-snapshot
Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method
inferred← citeshttps://doi.org/10.1063/5.0061948openalex-snapshot
Thermal performance of diamond field-effect transistors
inferred← citeshttps://doi.org/10.1063/5.0165596openalex-snapshot
High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method
inferred← citeshttps://doi.org/10.1063/5.0185805openalex-snapshot
Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials
inferred← citeshttps://doi.org/10.1063/5.0188372openalex-snapshot
Impact of water vapor annealing treatments on Al2O3/diamond interface
inferred← citeshttps://doi.org/10.1063/5.0244108openalex-snapshot
Hydrogen-terminated single crystal diamond MOSFET with the dielectric of Ga2O3
inferred← citeshttps://doi.org/10.1080/09243046.2024.2326718openalex-snapshot
Elucidating the green energy production potential of biomimetically fashioned [OFR-MnO/ZrO 2 ]-MMO electrocatalyst
inferred← citeshttps://doi.org/10.1080/26941112.2024.2357654openalex-snapshot
Recent advances in diamond MOSFETs with normally off characteristics
inferred← citeshttps://doi.org/10.1080/26941112.2025.2551496openalex-snapshot
Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors
inferred← citeshttps://doi.org/10.1080/26941112.2025.2554126openalex-snapshot
Diamond and III-nitride wide-bandgap semiconductors: a research journey
inferred← citeshttps://doi.org/10.1088/1361-6463/ab1e31openalex-snapshot
Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °C
inferred← citeshttps://doi.org/10.1088/1361-6463/aca61copenalex-snapshot
Diamond p-FETs using two-dimensional hole gas for high frequency and high voltage complementary circuits
inferred← citeshttps://doi.org/10.1088/1361-648x/ac5706openalex-snapshot
The effect of metal–insulator interface interactions on electrical transport in granular metals
inferred← citeshttps://doi.org/10.1088/1361-6528/ac0e67openalex-snapshot
Oxygen vacancy engineering of TaO x -based resistive memories by Zr doping for improved variability and synaptic behavior
inferred← citeshttps://doi.org/10.1088/1361-6641/ab4781openalex-snapshot
Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high- k ALD ZrO 2 dielectric
inferred← citeshttps://doi.org/10.1088/1361-6641/acb2eaopenalex-snapshot
High-performance HZO/InAlN/GaN MISHEMTs for Ka-band application
inferred← citeshttps://doi.org/10.1088/1674-4926/37/3/034006openalex-snapshot
Current mechanism and band alignment of Al (Pt)/HfGdO/Ge capacitors
inferred← citeshttps://doi.org/10.1088/1674-4926/39/7/074003openalex-snapshot
Research on the hydrogen terminated single crystal diamond MOSFET with MoO3 dielectric and gold gate metal
inferred← citeshttps://doi.org/10.1088/2053-1591/acf8afopenalex-snapshot
Understanding continuous wave laser-induced chemical reactions at micro- and nano-diamond-glass interface under infrared excitation
inferred← citeshttps://doi.org/10.1109/access.2020.2979985openalex-snapshot
Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al 2 O 3 Gate Dielectric
inferred← citeshttps://doi.org/10.1109/iceict57916.2023.10245613openalex-snapshot
Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on a Large-Area Wafer
inferred← citeshttps://doi.org/10.1109/iciea65512.2025.11148766openalex-snapshot
Gate Oxide Insulators on Surface-Channeled Diamond for Metal-Oxide-Semiconductor Electronic Devices
inferred← citeshttps://doi.org/10.1109/icmts.2019.8730974openalex-snapshot
High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited]
inferred← citeshttps://doi.org/10.1109/isaf53668.2023.10265422openalex-snapshot
Diamond FET and MEMS Dvivices
inferred← citeshttps://doi.org/10.1109/ises47678.2019.00092openalex-snapshot
Novel Threshold Voltage Model Incorporating Band-to-Band Tunneling in Heterostructure p-MOSFET
inferred← citeshttps://doi.org/10.1109/jeds.2019.2915250openalex-snapshot
High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
inferred← citeshttps://doi.org/10.1109/led.2017.2695495openalex-snapshot
Diamond Field Effect Transistors With MoO3Gate Dielectric
inferred← citeshttps://doi.org/10.1109/led.2017.2702744openalex-snapshot
Logic Circuits With Hydrogenated Diamond Field-Effect Transistors
inferred← citeshttps://doi.org/10.1109/led.2019.2903578openalex-snapshot
Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3as Gate Insulator
inferred← citeshttps://doi.org/10.1109/led.2020.2990118openalex-snapshot
LiF/Al₂O₃ as Dielectrics for MOSFET on Single Crystal Hydrogen-Terminated Diamond
inferred← citeshttps://doi.org/10.1109/ted.2021.3086458openalex-snapshot
A Study of Linearity of C-H Diamond FETs forS-Band Power Application
inferred← citeshttps://doi.org/10.1109/ted.2021.3117237openalex-snapshot
Normally-OFF Diamond Reverse Blocking MESFET
inferred← citeshttps://doi.org/10.1109/ted.2022.3140699openalex-snapshot
Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs
inferred← citeshttps://doi.org/10.1109/ted.2024.3496447openalex-snapshot
Normally-Off High-Performance Diamond FET With Large VTH and Low Leakage Current
inferred← citeshttps://doi.org/10.1109/ted.2025.3549382openalex-snapshot
High-Performance ZrO₂/β-Ga₂O₃ (001) Metal–Insulator–Semiconductor Capacitors
inferred← citeshttps://doi.org/10.1155/2015/124640openalex-snapshot
Diamond Based Field‐Effect Transistors of Zr Gate with SiNx Dielectric Layers
inferred← citeshttps://doi.org/10.1186/s11671-017-2004-1openalex-snapshot
The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD
inferred← citeshttps://doi.org/10.1557/s43578-021-00317-zopenalex-snapshot
Inversion-type p-channel diamond MOSFET issues
inferred← citeshttps://doi.org/10.3390/cryst13050783openalex-snapshot
Hydrogen-Terminated Single Crystal Diamond MOSFET with a Bilayer Dielectric of Gd2O3/Al2O3
inferred← citeshttps://doi.org/10.3390/cryst7040114openalex-snapshot
Fabrication of Low Dislocation Density, Single-Crystalline Diamond via Two-Step Epitaxial Lateral Overgrowth
inferred← citeshttps://doi.org/10.3390/ma13122746openalex-snapshot
Investigation of Electrocatalysts Produced by a Novel Thermal Spray Deposition Method
inferred← citeshttps://doi.org/10.3390/ma15020446openalex-snapshot
HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond
inferred← citeshttps://doi.org/10.3390/ma18081741openalex-snapshot
Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors
inferred← citeshttps://doi.org/10.3390/ma18122786openalex-snapshot
Surface Modification of TiO2 and ZrO2 Nanoparticles with Organic Acids and Ultrasound to Enhance Antibacterial Activity
inferred← citeshttps://doi.org/10.3390/ma19163529openalex-snapshot
Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors
inferred← citeshttps://doi.org/10.3390/nano13071256openalex-snapshot
Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates
inferred← citeshttps://doi.org/10.3390/pr14193056openalex-snapshot
Valorization of Dental Ceramic Waste with High Silicate Content for the Support of CuO Nanoparticles: Application to the Reduction of Organic Pollutants
inferred← citeshttps://doi.org/10.3390/s18061813openalex-snapshot
An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors
inferred← citeshttps://doi.org/10.3390/w15203702openalex-snapshot
Visible Light-Driven Photocatalytic Degradation of Tetracycline Using p-n Heterostructured Cr2O3/ZrO2 Nanocomposite
inferred← citeshttps://doi.org/10.7567/1347-4065/ab0542openalex-snapshot
Reaction mechanism of ZrO x metal resists with extreme ultraviolet irradiation
inferred← citeshttps://doi.org/10.7567/jjap.56.04cg06openalex-snapshot
A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered Zr x Si 1− x O 2 Gate dielectric and improved electrical and hysteresis performance
inferred← citeshttps://doi.org/10.7567/jjap.56.100301openalex-snapshot
Characterization and mobility analysis of MoO 3 -gated diamond MOSFET
inferred← citeshttps://doi.org/10.7733/jnfcwt.2024.022openalex-snapshot
Fabrication and Characterization of Zr and Hf Containing Vitrified Forms of Radioactive Waste
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