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Optically triggered multilevel resistive switching characteristics of Cu/MoS2/AlN/ITO bilayer memory structure
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/adfm.201300509openalex-snapshot
A Versatile Light‐Switchable Nanorod Memory: Wurtzite ZnO on Perovskite SrTiO3
inferredcites →https://doi.org/10.1002/adfm.201401278openalex-snapshot
Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a‐SrTiO3) Memristors
inferredcites →https://doi.org/10.1002/adfm.201501019openalex-snapshot
Donor‐Induced Performance Tuning of Amorphous SrTiO3 Memristive Nanodevices: Multistate Resistive Switching and Mechanical Tunability
inferredcites →https://doi.org/10.1002/adma.200900375openalex-snapshot
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
inferredcites →https://doi.org/10.1002/adma.201201595openalex-snapshot
Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO
inferredcites →https://doi.org/10.1002/adma.201303017openalex-snapshot
A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non‐Volatile Memory Devices
inferredcites →https://doi.org/10.1016/j.apsusc.2017.07.257openalex-snapshot
Metal ion formed conductive filaments by redox process induced nonvolatile resistive switching memories in MoS 2 film
inferredcites →https://doi.org/10.1016/j.cap.2018.10.013openalex-snapshot
Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode
inferredcites →https://doi.org/10.1016/j.jallcom.2017.07.184openalex-snapshot
Effect of top electrode material on resistive switching properties of WN based thin films for non volatile memory application
inferredcites →https://doi.org/10.1016/j.matchemphys.2018.08.013openalex-snapshot
Growth assessment and scrutinize dielectric reliability of c-axis oriented insulating AlN thin films in MIM structures for microelectronics applications
inferredcites →https://doi.org/10.1016/j.snb.2018.08.046openalex-snapshot
Excellent room temperature ammonia gas sensing properties of n-MoS2/p-CuO heterojunction nanoworms
inferredcites →https://doi.org/10.1021/acsaelm.8b00070openalex-snapshot
Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS2/ZnO Heterojunction Devices
inferredcites →https://doi.org/10.1021/acsanm.8b02358openalex-snapshot
Monolayer MoS2 Enabled Single-Crystalline Growth of AlN on Si(100) Using Low-Temperature Helicon Sputtering
inferredcites →https://doi.org/10.1038/ncomms3382openalex-snapshot
In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
inferredcites →https://doi.org/10.1038/s41565-020-0647-zopenalex-snapshot
Neuromorphic nanoelectronic materials
inferredcites →https://doi.org/10.1038/s41586-019-0892-1openalex-snapshot
Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting
inferredcites →https://doi.org/10.1038/s41598-019-55776-6openalex-snapshot
Coupled Charge Transfer Dynamics and Photoluminescence Quenching in Monolayer MoS2 Decorated with WS2 Quantum Dots
inferredcites →https://doi.org/10.1038/s41928-019-0331-1openalex-snapshot
Two-terminal floating-gate transistors with a low-power memristive operation mode for analogue neuromorphic computing
inferredcites →https://doi.org/10.1038/srep04614openalex-snapshot
Transparent Multi-level Resistive Switching Phenomena Observed in ITO/RGO/ITO Memory Cells by the Sol-Gel Dip-Coating Method
inferredcites →https://doi.org/10.1039/c8cp03908aopenalex-snapshot
Improved visible-light absorbance of monolayer MoS 2 on AlN substrate and its angle-dependent electronic structures
inferredcites →https://doi.org/10.1039/c8cs00254aopenalex-snapshot
Preparation of 2D material dispersions and their applications
inferredcites →https://doi.org/10.1063/1.2956703openalex-snapshot
Surface and size effects on the electrical properties of Cu nanowires
inferredcites →https://doi.org/10.1063/1.3589814openalex-snapshot
Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films
inferredcites →https://doi.org/10.1063/1.4726084openalex-snapshot
Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO 3−x -based nanoionics devices
inferredcites →https://doi.org/10.1063/1.4862755openalex-snapshot
Resistive switching memories in MoS2 nanosphere assemblies
inferredcites →https://doi.org/10.1063/1.4915951openalex-snapshot
Electrical and photovoltaic characteristics of MoS2/Si p-n junctions
inferredcites →https://doi.org/10.1063/1.4975157openalex-snapshot
Origin of multistate resistive switching in Ti/manganite/SiOx/Si heterostructures
inferredcites →https://doi.org/10.1063/1.5037139openalex-snapshot
Bipolar resistive switching behavior in MoS2 nanosheets fabricated on ferromagnetic shape memory alloy
inferredcites →https://doi.org/10.1063/1.5039969openalex-snapshot
High magnetoelectric coupling in Si-integrated AlN/NiMnIn thin film double layers at room temperature
inferredcites →https://doi.org/10.1063/1.5097232openalex-snapshot
White light-modulated bipolar resistive switching characteristics of Cu/MoS2 NRs/Pt MIM structure
inferredcites →https://doi.org/10.1063/1.5120565openalex-snapshot
Ferroic tunnel junctions and their application in neuromorphic networks
inferredcites →https://doi.org/10.1063/1.5125844openalex-snapshot
Light-activated electroforming in ITO/ZnO/p-Si resistive switching devices
inferredcites →https://doi.org/10.1088/0957-4484/23/38/385707openalex-snapshot
Photo-stimulated resistive switching of ZnO nanorods
inferredcites →https://doi.org/10.1088/1361-6528/aa6d98openalex-snapshot
Electrical transport and persistent photoconductivity in monolayer MoS 2 phototransistors
inferredcites →https://doi.org/10.1109/led.2011.2158056openalex-snapshot
Transparent Resistive Switching Memory Using ITO/AlN/ITO Capacitors
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.1002/aelm.202400482openalex-snapshot
Emerging Optoelectronic Devices for Brain‐Inspired Computing
inferred← citeshttps://doi.org/10.1007/s00339-024-07668-4openalex-snapshot
The light control resistance switch characteristics and conduction mechanism of BaTiO3/MoS2 structure
inferred← citeshttps://doi.org/10.1007/s10854-021-05405-8openalex-snapshot
Overview of residual stress in MEMS structures: Its origin, measurement, and control
inferred← citeshttps://doi.org/10.1016/j.cej.2025.161672openalex-snapshot
A facile morphologic modification strategy enabling robust resistive switching and electrochemical behavior of MnO2
inferred← citeshttps://doi.org/10.1016/j.ceramint.2022.04.332openalex-snapshot
Electrochemical kinetics of 2D-MoS2 sputtered over stainless-steel mesh: Insights into the Na+ ions storage for flexible supercapacitors
inferred← citeshttps://doi.org/10.1016/j.ceramint.2022.11.122openalex-snapshot
Remotely tuned multistate resistive switching in MoS2/NiMnIn thin film heterostructure for highly flexible ReRAM application
inferred← citeshttps://doi.org/10.1016/j.jallcom.2023.172499openalex-snapshot
Resistive switching characteristics of MnO2-based thin film for transparent non-volatile ReRAM
inferred← citeshttps://doi.org/10.1016/j.solmat.2022.111942openalex-snapshot
Ultrafast photoresponse in n-MoS2/AlN/p-Si (SIS) heterojunction based visible to NIR photodetectors
inferred← citeshttps://doi.org/10.1016/j.solmat.2023.112285openalex-snapshot
Effective ways to enhance the performance of n-MoS2/p-CuO heterojunction based self-powered photodetectors
inferred← citeshttps://doi.org/10.1016/j.vacuum.2024.112989openalex-snapshot
Memory Device Based on a Nano-Granulars and Nano-Worms Structured Mos2 Active Layer: The Origin of Resistive Switching Characteristics
inferred← citeshttps://doi.org/10.1021/acsaelm.3c01410openalex-snapshot
Synergistic Effects of UV Irradiation on a Flexible Ag/NCQDs-MoS2/Ag/Kapton Resistive-Switching Memory Device
inferred← citeshttps://doi.org/10.1021/acsaelm.4c00257openalex-snapshot
Electro-Optically Tunable Passivated Double-Cation Perovskite-Based ReRAM for Low-Power Memory Applications
inferred← citeshttps://doi.org/10.1021/acsanm.3c03382openalex-snapshot
Multilayered Nanometer Thick Films of n-MoS2 QD/n-MoS2/p-CuO as p–n Heterojunctions for Self-Powered Flexible Photodetectors
inferred← citeshttps://doi.org/10.1021/acsphotonics.5c02164openalex-snapshot
Optically Controlled MoS 2 Phase Conversion Memory-Based In-Sensor Computing Enables Higher Information Security
inferred← citeshttps://doi.org/10.1063/5.0045378openalex-snapshot
Two-dimensional MoS2 reinforced with Cu3N nanoflakes prepared via binder less sputtering route for flexible supercapacitor electrodes
inferred← citeshttps://doi.org/10.1063/5.0085045openalex-snapshot
A 10-nm-thick silicon oxide based high switching speed conductive bridging random access memory with ultra-low operation voltage and ultra-low LRS resistance
inferred← citeshttps://doi.org/10.1063/5.0093681openalex-snapshot
Estimating Li-ion storage in semiconducting nanocomposite of 2D-MoS2 decorated aluminum nitride nanoflowers for flexible electrodes of supercapacitors
inferred← citeshttps://doi.org/10.1063/5.0096679openalex-snapshot
Multifunctionality in ferromagnetic shape memory alloy-based resistive switching memory for flexible ReRAM application
inferred← citeshttps://doi.org/10.1063/5.0262592openalex-snapshot
Enhancement of resistive switching properties in RRAM with AlN-Al2O3 bilayer structure
inferred← citeshttps://doi.org/10.1088/1361-6528/ac17c4openalex-snapshot
Functional bipolar resistive switching in AlN/Ni–Mn–In based magnetoelectric heterostructure
inferred← citeshttps://doi.org/10.1088/1361-6633/adb6bcopenalex-snapshot
Two-dimensional material/group-III nitride hetero-structures and devices
inferred← citeshttps://doi.org/10.1109/icee56203.2022.10118088openalex-snapshot
A Broad Range (UV-Visible-NIR) Photodetector Based on N-Doped CQD/MoS2 (0D/2D) Quantum Dimensional Heterostructure
inferred← citeshttps://doi.org/10.1109/ted.2026.3697713openalex-snapshot
The Coexistence Behavior of Bipolar and Unipolar Switching in AlN-Based Memristors
inferred← citeshttps://doi.org/10.1142/s0217984924503317openalex-snapshot
Low voltage resistance switching characteristics of Cu/MoS2/Cu/ITO devices
inferred← citeshttps://doi.org/10.3389/fphy.2022.839243openalex-snapshot
Overview of Memristor-Based Neural Network Design and Applications
inferred← citeshttps://doi.org/10.54254/2755-2721/66/20240913openalex-snapshot
Switching mechanisms of two-dimensional transition metal dichalcogenides(2D TMDCs)-based memristive devices for neuromorphic computing
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