On the public citation graph
Electrical properties of yttrium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer
0 signed · 46 inferred · view as graph
Inferred edges come from two machine sources: sweeps of open repository metadata (mostly SSRN and Zenodo), and a bulk OpenAlex citation snapshot. Every row below is labelled with the one it came from. Neither is a complete citation index — absence here is not evidence of absence.
Is this your work? Sign in with ORCID and put your name on the
claims that are yours.
Reference health. See whether every reference in this work resolves to a
known work and none has been retracted — and get a dated CiteStamped
badge you can embed.
What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/aelm.201800832openalex-snapshot
Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases
inferredcites →https://doi.org/10.1002/lpor.201800050openalex-snapshot
Efficient and Tunable Photoinduced Honeycomb Lattice in an Atomic Ensemble
inferredcites →https://doi.org/10.1002/pssa.201900462openalex-snapshot
Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors
inferredcites →https://doi.org/10.1016/j.diamond.2016.04.014openalex-snapshot
Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers
inferredcites →https://doi.org/10.1016/j.diamond.2019.107530openalex-snapshot
Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiO4/Al2O3
inferredcites →https://doi.org/10.1016/j.diamond.2019.107532openalex-snapshot
Performance of hydrogen-terminated diamond MOSFET with bilayer dielectrics of YSZ/Al2O3
inferredcites →https://doi.org/10.1016/s0167-5729(97)80002-7openalex-snapshot
Hydrogen-terminated diamond surfaces and interfaces
inferredcites →https://doi.org/10.1038/srep31585openalex-snapshot
Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics
inferredcites →https://doi.org/10.1063/1.1429756openalex-snapshot
Hydrogen-induced transport properties of holes in diamond surface layers
inferredcites →https://doi.org/10.1063/1.4820143openalex-snapshot
Normally-off HfO2-gated diamond field effect transistors
inferredcites →https://doi.org/10.1063/1.4962851openalex-snapshot
High- k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors
inferredcites →https://doi.org/10.1063/1.4983091openalex-snapshot
Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator
inferredcites →https://doi.org/10.1063/5.0023662openalex-snapshot
A hybrid self-aligned MIS-MESFET architecture for improved diamond-based transistors
inferredcites →https://doi.org/10.1103/physrevb.46.7157openalex-snapshot
Surface energy and work function of elemental metals
inferredcites →https://doi.org/10.1109/led.2017.2695495openalex-snapshot
Diamond Field Effect Transistors With MoO3Gate Dielectric
inferredcites →https://doi.org/10.1109/led.2017.2702744openalex-snapshot
Logic Circuits With Hydrogenated Diamond Field-Effect Transistors
inferredcites →https://doi.org/10.1109/led.2018.2862158openalex-snapshot
A High Frequency Hydrogen-Terminated Diamond MISFET With ${f}_{{\text{T}}}/{f}_{\max}$ of 70/80 GHz
inferredcites →https://doi.org/10.1109/led.2018.2886596openalex-snapshot
3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
inferredcites →https://doi.org/10.1109/led.2020.2972330openalex-snapshot
An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor With Lanthanum Hexaboride Gate Material
inferredcites →https://doi.org/10.1109/ted.2020.3025515openalex-snapshot
Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiO x Gate Materials
inferredcites →https://doi.org/10.1126/science.1074374openalex-snapshot
High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
inferredcites →https://doi.org/10.1155/2015/124640openalex-snapshot
Diamond Based Field‐Effect Transistors of Zr Gate with SiNx Dielectric Layers
inferredcites →https://doi.org/10.3390/coatings9090539openalex-snapshot
Ohmic Contact of Pt/Au on Hydrogen-Terminated Single Crystal Diamond
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.1002/pssa.70471openalex-snapshot
Electrical Properties of H‐Diamond Field Effect Transistor With ZrO 2 /HfO 2 Stacked‐Gate Deposited by Electron Beam
inferred← citeshttps://doi.org/10.1016/j.apsusc.2022.156245openalex-snapshot
Twist angle modulated electronic properties and band alignments of hydrogen-terminated diamond (1 1 1)/hexagonal boron nitride heterostructures
inferred← citeshttps://doi.org/10.1016/j.diamond.2021.108646openalex-snapshot
Performance of hydrogen-terminated diamond MOSFET with LaB6/Al2O3 bilayer dielectric
inferred← citeshttps://doi.org/10.1016/j.diamond.2023.109774openalex-snapshot
High-threshold-voltage and low-leakage-current of normally-off H-diamond FET with self-aligned Zr/ZrO2 gate
inferred← citeshttps://doi.org/10.1016/j.diamond.2024.110905openalex-snapshot
Improved performance of H-diamond MOSFETs with ZrO2/Al2O3 gate dielectric stacks deposited by electron beam method
inferred← citeshttps://doi.org/10.1016/s0080-8784(21)x0003-8openalex-snapshot
Ultrawide Bandgap Semiconductors
inferred← citeshttps://doi.org/10.1021/acs.analchem.5c04340openalex-snapshot
Trace Detection of Staphylococcal Enterotoxin B Based on Hydrogen-Terminated Diamond Solution-Gate Field-Effect Transistor
inferred← citeshttps://doi.org/10.1039/d4ce01138dopenalex-snapshot
Facile controlled growth of multilayer h-BN thin films using spaced-confined APCVD and its gate dielectric application
inferred← citeshttps://doi.org/10.1063/5.0185805openalex-snapshot
Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials
inferred← citeshttps://doi.org/10.1063/5.0321652openalex-snapshot
THz emission in nano-graphene field-effect transistors with non-ideal boundary condition
inferred← citeshttps://doi.org/10.1080/26941112.2022.2159775openalex-snapshot
Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer
inferred← citeshttps://doi.org/10.1080/26941112.2024.2357654openalex-snapshot
Recent advances in diamond MOSFETs with normally off characteristics
inferred← citeshttps://doi.org/10.1088/1674-4926/43/2/021801openalex-snapshot
Diamond semiconductor and elastic strain engineering
inferred← citeshttps://doi.org/10.1109/ted.2022.3174047openalex-snapshot
Large V TH of Normally-OFF Field Effect Transistor With Yttrium Gate Material Directly Deposited on Hydrogen-Terminated Diamond
inferred← citeshttps://doi.org/10.1109/ted.2022.3184280openalex-snapshot
Small Subthreshold Swing Diamond Field Effect Transistors With SnO 2 Gate Dielectric
inferred← citeshttps://doi.org/10.1109/ted.2024.3358257openalex-snapshot
Electrical Characteristics of H-Diamond Transistors With ZrO2/Zr Stacked Dielectrics Deposited by Electron Beam Evaporation
inferred← citeshttps://doi.org/10.2478/amns.2023.1.00064openalex-snapshot
Electronic properties of diamond semiconductor materials: based on response surface model
inferred← citeshttps://doi.org/10.3390/cryst13050783openalex-snapshot
Hydrogen-Terminated Single Crystal Diamond MOSFET with a Bilayer Dielectric of Gd2O3/Al2O3
inferred← citeshttps://doi.org/10.3390/ma15020446openalex-snapshot
HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond
Editorial review for independent work. ICSAC — the Institute for Complexity
Science and Advanced Computing — runs a structured editorial panel for researchers
publishing outside journals, and publishes on CiteStamp rails. Submission is free
and goes through ORCID: icsacinstitute.org/submit.