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Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors

https://doi.org/10.1002/pssa.201900462

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/0471749095openalex-snapshot

Semiconductor Material and Device Characterization

inferredcites →https://doi.org/10.1002/adfm.201807672openalex-snapshot

Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering

inferredcites →https://doi.org/10.1002/adma.201706262openalex-snapshot

Photoelectric Detectors Based on Inorganic p‐Type Semiconductor Materials

inferredcites →https://doi.org/10.1002/pssa.201800555openalex-snapshot

The Role of Graphene‐Based Derivative as Interfacial Layer in Graphene/n‐Si Schottky Barrier Solar Cells

inferredcites →https://doi.org/10.1002/pssr.201700401openalex-snapshot

Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond

inferredcites →https://doi.org/10.1016/0038-1101(91)90186-3openalex-snapshot

MIS diodes on n-InP having an improved interface

inferredcites →https://doi.org/10.1016/j.diamond.2017.11.016openalex-snapshot

Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al

inferredcites →https://doi.org/10.1063/1.1564293openalex-snapshot

Fermi level on hydrogen terminated diamond surfaces

inferredcites →https://doi.org/10.1063/1.3086397openalex-snapshot

High hole mobility in boron doped diamond for power device applications

inferredcites →https://doi.org/10.1063/1.4819108openalex-snapshot

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

inferredcites →https://doi.org/10.1063/1.4820143openalex-snapshot

Normally-off HfO2-gated diamond field effect transistors

inferredcites →https://doi.org/10.1063/1.4894291openalex-snapshot

Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

inferredcites →https://doi.org/10.1063/1.4939650openalex-snapshot

Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond

inferredcites →https://doi.org/10.1063/1.4955469openalex-snapshot

Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

inferredcites →https://doi.org/10.1063/1.4962854openalex-snapshot

Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors

inferredcites →https://doi.org/10.1063/1.4983091openalex-snapshot

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

inferredcites →https://doi.org/10.1063/1.4985066openalex-snapshot

Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters

inferredcites →https://doi.org/10.1063/1.5021411openalex-snapshot

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

inferredcites →https://doi.org/10.1063/1.5022590openalex-snapshot

Annealing effects on hydrogenated diamond NOR logic circuits

inferredcites →https://doi.org/10.1063/1.5100328openalex-snapshot

Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

inferredcites →https://doi.org/10.1109/16.641382openalex-snapshot

Effect of gate-field dependent mobility degradation on distortion analysis in MOSFETs

inferredcites →https://doi.org/10.1109/jeds.2018.2880005openalex-snapshot

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

inferredcites →https://doi.org/10.1109/led.2006.876325openalex-snapshot

Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

inferredcites →https://doi.org/10.1109/led.2012.2210020openalex-snapshot

Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz

inferredcites →https://doi.org/10.1109/led.2017.2661340openalex-snapshot

Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

inferredcites →https://doi.org/10.1109/led.2017.2695495openalex-snapshot

Diamond Field Effect Transistors With MoO3Gate Dielectric

inferredcites →https://doi.org/10.1109/led.2017.2702744openalex-snapshot

Logic Circuits With Hydrogenated Diamond Field-Effect Transistors

inferredcites →https://doi.org/10.1109/led.2018.2886596openalex-snapshot

3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity

inferredcites →https://doi.org/10.1109/t-ed.1965.15489openalex-snapshot

Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces

inferredcites →https://doi.org/10.1109/t-ed.1987.22889openalex-snapshot

A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation

inferredcites →https://doi.org/10.1109/ted.2015.2433256openalex-snapshot

Conduction Mechanism in SrTiO3-Based Field-Effect Transistors

inferredcites →https://doi.org/10.1143/jjap.51.090114openalex-snapshot

Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface

inferredcites →https://doi.org/10.1155/2014/578168openalex-snapshot

A Review on Conduction Mechanisms in Dielectric Films

inferredcites →https://doi.org/10.7567/jjap.56.100301openalex-snapshot

Characterization and mobility analysis of MoO 3 -gated diamond MOSFET

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4679930openalex-extracted

inferred← citeshttps://doi.org/10.1002/pssr.202400242openalex-snapshot

Enhanced Threshold Voltage and Improved Subthreshold Swing Using NiOX/ITO Reverse Bias Gated Diamond pMOS

inferred← citeshttps://doi.org/10.1016/j.carbon.2020.07.078openalex-snapshot

Surface-acoustics phonon scattering in 2D-hole gas of diamond based FET devices

inferred← citeshttps://doi.org/10.1016/j.carbon.2021.01.121openalex-snapshot

Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate

inferred← citeshttps://doi.org/10.1016/j.carbon.2022.08.056openalex-snapshot

Electrical properties of cerium hexaboride gate hydrogen-terminated diamond field effect transistor with normally-off characteristics

inferred← citeshttps://doi.org/10.1016/j.diamond.2021.108646openalex-snapshot

Performance of hydrogen-terminated diamond MOSFET with LaB6/Al2O3 bilayer dielectric

inferred← citeshttps://doi.org/10.1016/j.diamond.2024.110905openalex-snapshot

Improved performance of H-diamond MOSFETs with ZrO2/Al2O3 gate dielectric stacks deposited by electron beam method

inferred← citeshttps://doi.org/10.1016/j.diamond.2026.113623openalex-snapshot

The DC and RF performance evaluation of normally-off diamond field-effect transistors with SiO2/Al2O3 dielectric layers

inferred← citeshttps://doi.org/10.1016/j.micrna.2026.208785openalex-snapshot

Towards practical applications: A review of hydrogen, oxygen-, and flourine-terminated and boron- and nitrogen-doped dimaond-based electronics devices

inferred← citeshttps://doi.org/10.1038/s41928-021-00689-4openalex-snapshot

High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

inferred← citeshttps://doi.org/10.1063/5.0027882openalex-snapshot

Electrical properties of yttrium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

inferred← citeshttps://doi.org/10.1063/5.0119899openalex-snapshot

Electrical characteristics of normally off hydrogen-terminated diamond field effect transistors with lanthanum oxide gate dielectric

inferred← citeshttps://doi.org/10.1063/5.0171832openalex-snapshot

Mobility-enhanced normally off hydrogen-terminated diamond FET with low interface state density using Al2O3/Nd gate stack

inferred← citeshttps://doi.org/10.1063/5.0185805openalex-snapshot

Performance of normally off hydrogen-terminated diamond field-effect transistor with Al2O3/CeB6 gate materials

inferred← citeshttps://doi.org/10.1063/5.0250891openalex-snapshot

An enhancement-mode C-H diamond FET with low work function gate material gadolinia

inferred← citeshttps://doi.org/10.1063/5.0253436openalex-snapshot

Low leakage fully-vertical GaN-on-Si power MOSFETs

inferred← citeshttps://doi.org/10.1080/26941112.2022.2159775openalex-snapshot

Germanium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer

inferred← citeshttps://doi.org/10.1109/led.2022.3180845openalex-snapshot

A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor

inferred← citeshttps://doi.org/10.1109/led.2023.3327134openalex-snapshot

Heterointegrated Ga 2 O 3 -on-SiC RF MOSFETs With f T / f max of 47/51 GHz by Ion-Cutting Process

inferred← citeshttps://doi.org/10.1109/led.2024.3485683openalex-snapshot

P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond

inferred← citeshttps://doi.org/10.1109/ted.2020.3025515openalex-snapshot

Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiO x Gate Materials

inferred← citeshttps://doi.org/10.1109/ted.2022.3174047openalex-snapshot

Large V TH of Normally-OFF Field Effect Transistor With Yttrium Gate Material Directly Deposited on Hydrogen-Terminated Diamond

inferred← citeshttps://doi.org/10.1109/ted.2024.3496447openalex-snapshot

Normally-Off High-Performance Diamond FET With Large VTH and Low Leakage Current

inferred← citeshttps://doi.org/10.3390/ma15020446openalex-snapshot

HfAlOx/Al2O3 Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond

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