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https://doi.org/10.2139/ssrn.4679930

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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/aelm.201800832openalex-extracted
Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases
inferredcites →https://doi.org/10.1002/pssa.201900462openalex-extracted
Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors
inferredcites →https://doi.org/10.1007/s11664-010-1500-1openalex-extracted
Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3
inferredcites →https://doi.org/10.1016/j.carbon.2021.01.121openalex-extracted
Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate
inferredcites →https://doi.org/10.1016/j.carbon.2022.08.056openalex-extracted
Electrical properties of cerium hexaboride gate hydrogen-terminated diamond field effect transistor with normally-off characteristics
inferredcites →https://doi.org/10.1016/j.diamond.2016.04.014openalex-extracted
Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers
inferredcites →https://doi.org/10.1016/j.diamond.2021.108646openalex-extracted
Performance of hydrogen-terminated diamond MOSFET with LaB6/Al2O3 bilayer dielectric
inferredcites →https://doi.org/10.1016/j.diamond.2023.109774openalex-extracted
High-threshold-voltage and low-leakage-current of normally-off H-diamond FET with self-aligned Zr/ZrO2 gate
inferredcites →https://doi.org/10.1038/s41928-021-00689-4openalex-extracted
High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures
inferredcites →https://doi.org/10.1038/srep06395openalex-extracted
Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric
inferredcites →https://doi.org/10.1063/1.4770059openalex-extracted
Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices
inferredcites →https://doi.org/10.1063/1.4819108openalex-extracted
Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
inferredcites →https://doi.org/10.1063/1.4820143openalex-extracted
Normally-off HfO2-gated diamond field effect transistors
inferredcites →https://doi.org/10.1063/1.4985066openalex-extracted
Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters
inferredcites →https://doi.org/10.1063/5.0027882openalex-extracted
Electrical properties of yttrium gate hydrogen-terminated diamond field effect transistor with Al2O3 dielectric layer
inferredcites →https://doi.org/10.1063/5.0119899openalex-extracted
Electrical characteristics of normally off hydrogen-terminated diamond field effect transistors with lanthanum oxide gate dielectric
inferredcites →https://doi.org/10.1080/26941112.2022.2082853openalex-extracted
Hydrogen-terminated diamond MOSFETs on (0 0 1) single crystal diamond with state of the art high RF power density
inferredcites →https://doi.org/10.1088/1361-6463/ab4eabopenalex-extracted
Diamond power devices: state of the art, modelling, figures of merit and future perspective
inferredcites →https://doi.org/10.1109/led.2018.2886596openalex-extracted
3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
inferredcites →https://doi.org/10.1109/led.2022.3226426openalex-extracted
3659-V NO₂ p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates
inferredcites →https://doi.org/10.1109/ted.2020.3025515openalex-extracted
Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiO x Gate Materials
inferredcites →https://doi.org/10.1109/ted.2022.3147738openalex-extracted
High Mobility Normally-OFF Hydrogenated Diamond Field Effect Transistors With BaF₂ Gate Insulator Formed by Electron Beam Evaporator
inferredcites →https://doi.org/10.1109/ted.2022.3184280openalex-extracted
Small Subthreshold Swing Diamond Field Effect Transistors With SnO 2 Gate Dielectric
inferredcites →https://doi.org/10.1126/science.1074374openalex-extracted
High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
inferredcites →https://doi.org/10.1143/jjap.41.2611openalex-extracted
RF Performance of High Transconductance and High-Channel-Mobility Surface-Channel Polycrystalline Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
inferredcites →https://doi.org/10.1557/mrs.2014.95openalex-extracted
Diamond surface conductivity: Properties, devices, and sensors
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