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InP-based strain engineered InAs(Sb)/InAsPSb multiple quantum wells with tunable emission and high internal quantum efficiency enabled by Sb incorporation

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/adfm.202309897openalex-snapshot

Toward Ga‐Free Wavelength Extended 2.6 µm InAsP Photodetectors with High Performance

inferredcites →https://doi.org/10.1007/s13391-021-00329-1openalex-snapshot

Structural Analysis of InAs1−xSbx Epilayer Considering Occurrence of Crystallographic Tilt Exploiting High-Resolution X-Ray Diffraction

inferredcites →https://doi.org/10.1016/0920-2307(91)90006-9openalex-snapshot

Dislocations in strained-layer epitaxy: theory, experiment, and applications

inferredcites →https://doi.org/10.1016/j.heliyon.2024.e25269openalex-snapshot

Effect of multiple quantum well periods on structural properties and performance of extended short-wavelength infrared LEDs

inferredcites →https://doi.org/10.1016/j.jallcom.2019.03.180openalex-snapshot

Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics

inferredcites →https://doi.org/10.1016/j.jcrysgro.2013.10.043openalex-snapshot

Thin, high quality GaInP compositionally graded buffer layers grown at high growth rates for metamorphic III–V solar cell applications

inferredcites →https://doi.org/10.1016/j.jcrysgro.2015.04.043openalex-snapshot

GaSb-based >3µm laser diodes grown with up to 2.4% compressive strain in the quantum wells using strain compensation

inferredcites →https://doi.org/10.1016/j.jcrysgro.2021.126501openalex-snapshot

Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures

inferredcites →https://doi.org/10.1016/s0022-0248(03)01164-3openalex-snapshot

Antimony segregation in GaAs-based multiple quantum well structures

inferredcites →https://doi.org/10.1021/acsnano.2c01694openalex-snapshot

Mid-infrared HgTe Colloidal Quantum Dot LEDs

inferredcites →https://doi.org/10.1021/cg025502yopenalex-snapshot

Strain-Balanced Criteria for Multiple Quantum Well Structures and Its Signature in X-ray Rocking Curves

inferredcites →https://doi.org/10.1038/srep06131openalex-snapshot

Temperature-dependent photoluminescence in light-emitting diodes

inferredcites →https://doi.org/10.1063/1.103049openalex-snapshot

InGaAs/InAsPSb diode lasers with output wavelengths at 2.52 μm

inferredcites →https://doi.org/10.1063/1.108842openalex-snapshot

Dislocations and strain relief in compositionally graded layers

inferredcites →https://doi.org/10.1063/1.117048openalex-snapshot

Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition

inferredcites →https://doi.org/10.1063/1.124329openalex-snapshot

Investigation of periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices by the kinematical simulation of x-ray diffraction

inferredcites →https://doi.org/10.1063/1.126388openalex-snapshot

InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm

inferredcites →https://doi.org/10.1063/1.1368156openalex-snapshot

Band parameters for III–V compound semiconductors and their alloys

inferredcites →https://doi.org/10.1063/1.1517176openalex-snapshot

Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves

inferredcites →https://doi.org/10.1063/1.2974795openalex-snapshot

GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions

inferredcites →https://doi.org/10.1063/1.3098232openalex-snapshot

Strain relaxation properties of InAsyP1−y metamorphic materials grown on InP substrates

inferredcites →https://doi.org/10.1063/1.3679378openalex-snapshot

Type-II InP-based lasers emitting at 2.55 μm

inferredcites →https://doi.org/10.1063/1.369467openalex-snapshot

Threading dislocation reduction in strained layers

inferredcites →https://doi.org/10.1063/1.4773024openalex-snapshot

2.8 μm emission from type-I quantum wells grown on InAsxP1−x/InP metamorphic graded buffers

inferredcites →https://doi.org/10.1063/1.4968560openalex-snapshot

Room-temperature mid-infrared quantum well lasers on multi-functional metamorphic buffers

inferredcites →https://doi.org/10.1063/1.5060653openalex-snapshot

Improved performance of InP-based 2.1 μm InGaAsSb quantum well lasers using Sb as a surfactant

inferredcites →https://doi.org/10.1063/5.0209740openalex-snapshot

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

inferredcites →https://doi.org/10.1088/0022-3727/42/2/025108openalex-snapshot

Design and characterization of strained InGaAs/GaAsSb type-II ‘W’ quantum wells on InP substrates for mid-IR emission

inferredcites →https://doi.org/10.1088/0268-1242/27/10/105027openalex-snapshot

Time-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD—antimony surfactant effect

inferredcites →https://doi.org/10.1103/physrevb.59.10283openalex-snapshot

Dimensionality of excitons in laser-diode structures composed of InxGa1−xN multiple quantum wells

inferredcites →https://doi.org/10.1109/jstqe.2013.2247572openalex-snapshot

InP-Based Type-II Quantum-Well Lasers and LEDs

inferredcites →https://doi.org/10.1109/ted.2007.902871openalex-snapshot

nextnano: General Purpose 3-D Simulations

inferredcites →https://doi.org/10.1116/1.587796openalex-snapshot

Strained layer epitaxy: How do capping layers and oppositely strained intermediate layers enhance the critical thickness?

inferredcites →https://doi.org/10.1134/s1063782623070163openalex-snapshot

Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement

inferredcites →https://doi.org/10.1134/s1063783419100305openalex-snapshot

InAs(1 – y)Sby/InAsSbP Narrow-Gap Heterostructures (y = 0.09–0.16) Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4–6 μm

inferredcites →https://doi.org/10.2320/matertrans1989.35.596openalex-snapshot

Measurements of Heat of Formation of GaP, InP, GaAs, InAs, GaSb and InSb

inferredcites →https://doi.org/10.3390/ma12020317openalex-snapshot

PCSEL Performance of Type-I InGaAsSb Double-QWs Laser Structure Prepared by MBE

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.6301148openalex-extracted

Analysis of Composition Dependent Structural and Vibrational Behavior of MBE Grown InAs1-x-ySbxPy Epilayers

inferred← citeshttps://doi.org/10.1007/s10825-025-02339-wopenalex-snapshot

The role of cladding layer thickness in InAsPSb/InGaAs MQW IR LED performance

inferred← citeshttps://doi.org/10.1016/j.jlumin.2026.122095openalex-snapshot

Strain-compensated InGaAs/AlGaAsP multiple quantum wells for near-infrared light-emitting diodes

inferred← citeshttps://doi.org/10.1016/j.mseb.2026.119221openalex-snapshot

Structural morphology, dynamical and optical properties of InAs, InSb and InAs1-xSbx Epilayers

inferred← citeshttps://doi.org/10.1116/6.0005328openalex-snapshot

Vibrational studies of gas source molecular beam epitaxy grown InAs1−x−yPySbx epilayers by infrared reflectivity and Raman scattering

inferred← citeshttps://doi.org/10.1364/iprsn.2025.ith3b.3openalex-snapshot

Monolithic Integration of Tunable Short- to Mid-Wave Infrared Optoelectronic Devices on InP

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