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Band parameters for III–V compound semiconductors and their alloys

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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/(sici)1521-3951(199801)205:1<r7::aid-pssb99997>3.0.co;2-7openalex-snapshot

The Dependence of the Band Gap on Alloy Composition in Strained AlGaN on GaN

inferredcites →https://doi.org/10.1002/(sici)1521-3951(199812)210:2<353::aid-pssb353>3.0.co;2-xopenalex-snapshot

Strain Effects on Bound Exciton Luminescence in Epitaxial GaAs Studied Using a Wafer Bending Technique

inferredcites →https://doi.org/10.1002/(sici)1521-3951(199812)210:2<845::aid-pssb845>3.0.co;2-9openalex-snapshot

Landau Level Quantization Measured by Scanning Tunneling Spectroscopy on n-InAs(110)

inferredcites →https://doi.org/10.1002/(sici)1521-3951(199902)211:2<869::aid-pssb869>3.0.co;2-nopenalex-snapshot

Energy Level Alignments in Strained-Layer GaInP/AlGaInP Laser Diodes: Model Solid Theory Analysis of Pressure-Photoluminescence Experiments

inferredcites →https://doi.org/10.1002/(sici)1521-3951(199911)216:1<135::aid-pssb135>3.0.co;2-#openalex-snapshot

Effect of Nitrogen‐Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys

inferredcites →https://doi.org/10.1002/(sici)1521-3951(199912)216:2<975::aid-pssb975>3.0.co;2-nopenalex-snapshot

Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors

inferredcites →https://doi.org/10.1002/1521-3951(199702)199:2<403::aid-pssb403>3.0.co;2-lopenalex-snapshot

Energy Gap versus Alloy Composition and Temperature in GaxIn1?xSb

inferredcites →https://doi.org/10.1002/1521-396x(199709)163:1<101::aid-pssa101>3.0.co;2-sopenalex-snapshot

Band Discontinuities of Perfectly Lattice-Matched GaSb(n)/GaAlAsSb(p)/GaSb(p) Double Heterojunction

inferredcites →https://doi.org/10.1002/crat.2170300505openalex-snapshot

High Quality InAs1–ySby/InAs Multilayers for mid‐IR Detectors

inferredcites →https://doi.org/10.1002/pssa.19700020332openalex-snapshot

Energy gap variation in GaAsxSb1-x alloys

inferredcites →https://doi.org/10.1002/pssa.2210040245openalex-snapshot

Reflection and absorption spectra of GaAsxSb1-x solid solutions

inferredcites →https://doi.org/10.1002/pssa.2210370260openalex-snapshot

Absorption edge of InPxAs1−x mixed crystals

inferredcites →https://doi.org/10.1002/pssa.2211240233openalex-snapshot

Conduction-Band Discontinuities of Strained- and Unstrained-Layer InxGa1−xAs/GaAs and InxGa1−xAs/InP Heterojunctions and Quantum Wells

inferredcites →https://doi.org/10.1002/pssa.2211280237openalex-snapshot

Band Gaps, Effective Masses, and Band Offsets in Lattice Matched Heterojunctions

inferredcites →https://doi.org/10.1002/pssb.19660160149openalex-snapshot

The Effect of Higher Bands on the Effective Masses in InSb and InAs

inferredcites →https://doi.org/10.1002/pssb.19670240162openalex-snapshot

Infra‐Red Faraday Effect in p‐Type InAs and Si

inferredcites →https://doi.org/10.1002/pssb.2220490115openalex-snapshot

Determination of optical interband transitions in crystalline quartz from X‐ray spectroscopical data

inferredcites →https://doi.org/10.1002/pssb.2220490263openalex-snapshot

Anisotropic effective masses of electrons in AlAs

inferredcites →https://doi.org/10.1002/pssb.2220550118openalex-snapshot

Band Structure and Pseudopotential Form Factors for AlAs

inferredcites →https://doi.org/10.1002/pssb.2220550256openalex-snapshot

Temperature Dependences of the Optical Effective Mass of Holes in p‐InSb and p‐GaAs

inferredcites →https://doi.org/10.1002/pssb.2220640116openalex-snapshot

Temperature Dependence of the Absorption Edge in Crystalline and Vitreous As2S3

inferredcites →https://doi.org/10.1002/pssb.2220640254openalex-snapshot

Plasma Faraday Rotation in n‐Type GaN

inferredcites →https://doi.org/10.1002/pssb.2220650119openalex-snapshot

Electroreflectance Spectra of AlxIn1−xSb Alloys

inferredcites →https://doi.org/10.1002/pssb.2220660117openalex-snapshot

Band Structure and Reflectivity of GaN

inferredcites →https://doi.org/10.1002/pssb.2220680106openalex-snapshot

Nuclear spin dynamics in the presence of electronic relaxation

inferredcites →https://doi.org/10.1002/pssb.2220680140openalex-snapshot

Tight‐binding calculations of the valence bands of diamond and zincblende crystals

inferredcites →https://doi.org/10.1002/pssb.2220680166openalex-snapshot

Light hole effective masses of Gax In1–xSb

inferredcites →https://doi.org/10.1002/pssb.2220730231openalex-snapshot

Electroreflectance and Wavelength Modulation Study of the Direct and Indirect Fundamental Transition Region of In 1−x Ga x P

inferredcites →https://doi.org/10.1002/pssb.2220730259openalex-snapshot

Indirect Absorption Edge of (GaP)x(InAs)l−x Mixed Crystals

inferredcites →https://doi.org/10.1002/pssb.2220920210openalex-snapshot

Effect of uniaxial stress on free and bismuth‐bound excitions in InP

inferredcites →https://doi.org/10.1002/pssb.2221050240openalex-snapshot

Non‐Γ Deep Levels and the Conduction Band Structure of Ga1−xAlxAs Alloys

inferredcites →https://doi.org/10.1002/pssb.2221160217openalex-snapshot

Far‐infrared photoconductivity spectroscopy of shallow acceptors in InSb

inferredcites →https://doi.org/10.1002/pssb.2221200231openalex-snapshot

Temperature‐Dependent Effective Masses in III‐V Compound Semiconductors

inferredcites →https://doi.org/10.1002/pssb.2221260102openalex-snapshot

Deformation Potentials of k = 0 States of Tetrahedral Semiconductors

inferredcites →https://doi.org/10.1002/pssb.2221300227openalex-snapshot

Energy Band Structure of In1‐xGaxAsyP1‐y Lattice Matched to InP by Means of the Line Profile Analysis of the Electroreflectance Spectra

inferredcites →https://doi.org/10.1002/pssb.2221350253openalex-snapshot

Pressure dependence of the electronic effective mass and effective g‐factor in the narrow gap semiconductor InSb

inferredcites →https://doi.org/10.1002/pssb.2221570132openalex-snapshot

Excited Acceptor States in II–VI and III–V Semiconductors

inferredcites →https://doi.org/10.1002/pssb.2221670136openalex-snapshot

Galvanomagnetic Luminescence Spectra of InSb

inferredcites →https://doi.org/10.1002/pssb.2221720141openalex-snapshot

Asymmetric Electron Spin Resonance Signals in Hydrogenated Amorphous Germanium Carbide Films

inferredcites →https://doi.org/10.1006/jcph.1994.1196openalex-snapshot

Finite Element Solutions to GaAs-AlAs Quantum Wells with Connection Matrices at Heterojunctions

inferredcites →https://doi.org/10.1006/spmi.1996.0310openalex-snapshot

Electro-absorption modulator using a type-II quantum well in the InxGa1−xAs/InAlAs/InP system

inferredcites →https://doi.org/10.1006/spmi.1999.0777openalex-snapshot

The effect of compositional disorder on electronic band structure in GaxIn1−xAsySb1−yalloys lattice matched to GaSb

inferredcites →https://doi.org/10.1007/978-1-4615-5673-2openalex-snapshot

Physics of Strained Quantum Well Lasers

inferredcites →https://doi.org/10.1007/978-3-642-58562-3openalex-snapshot

Nitride Semiconductors and Devices

inferredcites →https://doi.org/10.1007/978-3-642-60650-2openalex-snapshot

Superlattices and Other Heterostructures: Symmetry and Optical Phenomena

inferredcites →https://doi.org/10.1007/978-3-642-61338-8openalex-snapshot

Electronic Structure and Optical Properties of Semiconductors

inferredcites →https://doi.org/10.1007/978-3-642-97675-9openalex-snapshot

Semiconductors — Basic Data

inferredcites →https://doi.org/10.1007/978-3-662-03313-5openalex-snapshot

Fundamentals of Semiconductors

inferredcites →https://doi.org/10.1007/978-3-662-03462-0openalex-snapshot

The Blue Laser Diode: GaN based Light Emitters and Lasers

inferredcites →https://doi.org/10.1007/bf00540299openalex-snapshot

Growth and characterization of InGaAsP lattice-matched to InP

inferredcites →https://doi.org/10.1007/bf00624980openalex-snapshot

Ordered-disordered ternary alloys by atomic layer epitaxy

inferredcites →https://doi.org/10.1007/bf00729406openalex-snapshot

Luminescence and lattice parameter of cubic gallium nitride

inferredcites →https://doi.org/10.1007/bf01343953openalex-snapshot

Shubnikov-de Haas effect and effective mass inn-InP in dependence on carrier concentration

inferredcites →https://doi.org/10.1007/bf02457211openalex-snapshot

Optical study on ultrathin InAs/InP single quantum wells

inferredcites →https://doi.org/10.1007/bf02649949openalex-snapshot

Studies of the Ga1-xInxAs1-ySby quaternary alloy system I. liquid-phase epitaxial growth and assessment

inferredcites →https://doi.org/10.1007/bf02654308openalex-snapshot

Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range

inferredcites →https://doi.org/10.1007/bf02655258openalex-snapshot

Control of ordering in GaInP and effect on bandgap energy

inferredcites →https://doi.org/10.1007/bf02655291openalex-snapshot

Bandgap and lattice constant of GaInAsP as a function of alloy composition

inferredcites →https://doi.org/10.1007/bf02655439openalex-snapshot

Energy bandgap and lattice constant contours of iii-v quaternary alloys of the form Ax By Cz D or ABx Cy Dz

inferredcites →https://doi.org/10.1007/bf02656016openalex-snapshot

Energy bandgap and lattice constant contours of iii–v quaternary alloys

inferredcites →https://doi.org/10.1007/bf02659168openalex-snapshot

Liquid phase epitaxial growth of GaxIn1−xP

inferredcites →https://doi.org/10.1007/bf02661008openalex-snapshot

Calculation of energy band gaps in quaternary iii/v alloys

inferredcites →https://doi.org/10.1007/bf02670862openalex-snapshot

Electron effective mass in InuGa1−uPvAs1−v for 0 ≤ v ≤ 1

inferredcites →https://doi.org/10.1007/bf02684206openalex-snapshot

Luminescence from AI0.28Ga0.72AS0.62P0.38 layers grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy

inferredcites →https://doi.org/10.1007/bf02739978openalex-snapshot

Inversion asymmetry and magneto-optics in zinc-blende semiconductors

inferredcites →https://doi.org/10.1007/bf03030218openalex-snapshot

Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells

inferredcites →https://doi.org/10.1007/bfb0107763openalex-snapshot

Wannier-mott polaritons in magnetic fields

inferredcites →https://doi.org/10.1007/s002570050090openalex-snapshot

Effective mass and energy-band parameters in InP by magnetophonon effect

inferredcites →https://doi.org/10.1007/s11664-997-0097-5openalex-snapshot

Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile: Application to an InP/Ga0.47In0.53As/InP single quantum well

inferredcites →https://doi.org/10.1007/s11664-997-0275-5openalex-snapshot

Type I and Type II Alignment of the Light Hole Band in In0.15Ga0.85As/GaAs and in ln0.15Ga0.85As/Al0.15Ga0.85As Strained Quantum Wells

inferredcites →https://doi.org/10.1007/s11664-997-0279-1openalex-snapshot

Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy

inferredcites →https://doi.org/10.1007/s11664-998-0181-5openalex-snapshot

Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance

inferredcites →https://doi.org/10.1016/0020-0891(83)90004-0openalex-snapshot

Fir photoconductivity in epitaxial InP

inferredcites →https://doi.org/10.1016/0020-0891(89)90006-7openalex-snapshot

Intrinsic carrier concentration and effective masses in InAs1−xSbx

inferredcites →https://doi.org/10.1016/0022-0248(76)90041-5openalex-snapshot

Defects in epitaxial multilayers

inferredcites →https://doi.org/10.1016/0022-0248(88)90507-6openalex-snapshot

OMVPE growth of the new semiconductor alloys GaP1−xSbx and InP1−xSbx

inferredcites →https://doi.org/10.1016/0022-0248(88)90560-xopenalex-snapshot

Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD

inferredcites →https://doi.org/10.1016/0022-0248(89)90419-3openalex-snapshot

Conduction-band edge discontinuity of InGaAs/GaAsSb heterostructures lattice-matched to InP grown by molecular beam epitaxy

inferredcites →https://doi.org/10.1016/0022-0248(92)90158-fopenalex-snapshot

Liquid phase epitaxy and characterization of InAs1- x - ySb x P y on (100) InAs

inferredcites →https://doi.org/10.1016/0022-0248(93)90101-2openalex-snapshot

The growth of InP1-xSbx by metalorganic chemical vapor deposition

inferredcites →https://doi.org/10.1016/0022-0248(94)00464-1openalex-snapshot

Growth of Al In1−N single crystal films by microwave-excited metalorganic vapor phase epitaxy

inferredcites →https://doi.org/10.1016/0022-0248(94)91033-2openalex-snapshot

Intermediate range between N-doped GaP and GaP1-xNx alloys: difference in optical properties

inferredcites →https://doi.org/10.1016/0022-0248(94)91137-1openalex-snapshot

Characterization of GaP / InGaP and GaP / GaAsP strained-layer quantum wells grown by metalorganic chemical vapor deposition

inferredcites →https://doi.org/10.1016/0022-0248(95)00748-2openalex-snapshot

Molecular beam epitaxy of quantum well structures

inferredcites →https://doi.org/10.1016/0022-0248(95)00950-7openalex-snapshot

Growth of AlPSb and GaPSb on InP by gas-source molecular beam epitaxy

inferredcites →https://doi.org/10.1016/0022-0248(95)80179-gopenalex-snapshot

Observation of spatially-indirect transition and accurate determination of band offset ratio by excitation spectroscopy on GaAs/AlGaAs quantum wells lightly doped with Be acceptors

inferredcites →https://doi.org/10.1016/0022-2313(72)90032-4openalex-snapshot

Variation of photoluminescence with carrier concentration in GaN

inferredcites →https://doi.org/10.1016/0022-3697(57)90013-6openalex-snapshot

Band structure of indium antimonide

inferredcites →https://doi.org/10.1016/0022-3697(58)90100-8openalex-snapshot

The influence of exchange on the effective mass formalism

inferredcites →https://doi.org/10.1016/0022-3697(74)90026-2openalex-snapshot

Piezoreflectance measurements on GaxIn1−x Sb alloys

inferredcites →https://doi.org/10.1016/0022-3697(83)90064-1openalex-snapshot

A Semi-empirical tight-binding theory of the electronic structure of semiconductors†

inferredcites →https://doi.org/10.1016/0022-3697(85)90101-5openalex-snapshot

A minimal basis semi-ab initio approach to the band structures of semiconductors

inferredcites →https://doi.org/10.1016/0022-3697(94)00206-1openalex-snapshot

High pressure determination of AlGaInP band structure

inferredcites →https://doi.org/10.1016/0022-3697(94)00216-9openalex-snapshot

Direct measurement of band offsets in GaInP/AlGaInP using high pressure

inferredcites →https://doi.org/10.1016/0022-3697(94)00217-7openalex-snapshot

Investigation of the conduction bandstructure in (001) oriented type II GaAs/AlAs short period superlattices using (100) uniaxial stress

inferredcites →https://doi.org/10.1016/0031-8914(67)90062-6openalex-snapshot

Temperature dependence of the energy gap in semiconductors

inferredcites →https://doi.org/10.1016/0031-9163(66)90330-1openalex-snapshot

Cyclotron resonance of holes in GaSb

inferredcites →https://doi.org/10.1016/0038-1098(67)90091-9openalex-snapshot

Electroreflectance study of interband magneto-optical transitions in InAs and InSb at 1.5° K

inferredcites →https://doi.org/10.1016/0038-1098(71)90127-xopenalex-snapshot

The cathodoluminescence of Ga∞In1-∞P alloys

inferredcites →https://doi.org/10.1016/0038-1098(72)90269-4openalex-snapshot

Cyclotron resonance of holes in GaP

inferredcites →https://doi.org/10.1016/0038-1098(72)90440-1openalex-snapshot

About the band structure of GaxIn1−xP alloys

inferredcites →https://doi.org/10.1016/0038-1098(73)90785-0openalex-snapshot

Submillimetre cyclotron resonance measurement of the effective masses of the holes in p-type GaP

inferredcites →https://doi.org/10.1016/0038-1098(74)90242-7openalex-snapshot

Hole mass measurement in p-type InP and GaP by submillimetre cyclotron resonance in pulsed magnetic fields

inferredcites →https://doi.org/10.1016/0038-1098(77)91369-2openalex-snapshot

Band structure enhancement of indirect transitions

inferredcites →https://doi.org/10.1016/0038-1098(78)91010-4openalex-snapshot

Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices

inferredcites →https://doi.org/10.1016/0038-1098(79)90111-xopenalex-snapshot

Indirect exciton dispersion in III–V semiconductors: “Camel's back” in GaP

inferredcites →https://doi.org/10.1016/0038-1098(80)90924-2openalex-snapshot

Electroreflectance investigation of In1−xGaxAsyP1−y lattice-matched to InP

inferredcites →https://doi.org/10.1016/0038-1098(81)90340-9openalex-snapshot

Derivative transmission measurements of the temperature dependance of the Γ-Γ transition in the Ga0.73In0.27As0.59P0.41 compound

inferredcites →https://doi.org/10.1016/0038-1098(82)90790-6openalex-snapshot

A semi-empirical tight-binding theory of the electronic structure of semiconductors

inferredcites →https://doi.org/10.1016/0038-1098(84)90216-3openalex-snapshot

Heterojunction band discontinuities of quaternary semiconductor alloys

inferredcites →https://doi.org/10.1016/0038-1098(84)90299-0openalex-snapshot

Nonparabolicity and warping in the conduction band of GaAs

inferredcites →https://doi.org/10.1016/0038-1098(84)90426-5openalex-snapshot

Transport parameters of n-type GaSb

inferredcites →https://doi.org/10.1016/0038-1098(84)90452-6openalex-snapshot

Photoluminescence of Mn- and Un-doped Ga0.47In0.53As on InP

inferredcites →https://doi.org/10.1016/0038-1098(84)90545-3openalex-snapshot

Theory of free-electron optical absorption in n-GaAs

inferredcites →https://doi.org/10.1016/0038-1098(85)90189-9openalex-snapshot

Polaron cyclotron resonance in n-CdTe and n-InP

inferredcites →https://doi.org/10.1016/0038-1098(85)90218-2openalex-snapshot

Five-level k · p model for conduction electrons in GaAs. Description of cyclotron resonance experiments

inferredcites →https://doi.org/10.1016/0038-1098(86)90727-1openalex-snapshot

Edge emission of AlxGa1−xN

inferredcites →https://doi.org/10.1016/0038-1098(87)90021-4openalex-snapshot

Optical properties of AlAs

inferredcites →https://doi.org/10.1016/0038-1098(87)90720-4openalex-snapshot

Band lineups at the GaSb-AlxGa1−xSb hetero-junction: Experimental evidence for a new common anion rule

inferredcites →https://doi.org/10.1016/0038-1098(89)90462-6openalex-snapshot

Electroreflectance study of AlxGa1−x−yInyP alloy

inferredcites →https://doi.org/10.1016/0038-1098(89)90911-3openalex-snapshot

Electrical characteristics and energy-band offsets in n-InAs0.89Sb0.11/n-GaSb heterojunctions grown by the liquid phase epitaxy technique

inferredcites →https://doi.org/10.1016/0038-1098(90)90005-vopenalex-snapshot

Temperature dependence of the Eo and Eo + △o gaps of InP up to 600°C

inferredcites →https://doi.org/10.1016/0038-1098(90)90970-mopenalex-snapshot

Piezo-photoreflectance of the direct gaps of GaAs and Ga0.78Al0.22As

inferredcites →https://doi.org/10.1016/0038-1098(91)90006-hopenalex-snapshot

High field cyclotron resonance and the electron effective masses in AlAs

inferredcites →https://doi.org/10.1016/0038-1098(91)90437-zopenalex-snapshot

Band offset determination from conduction band filling in InGaAs/GaAs quantum wells

inferredcites →https://doi.org/10.1016/0038-1098(92)90877-copenalex-snapshot

Selfconsistent tight-binding calculations of band offsets in GaAs/AlxGa1−xAs-(110) and GaSb/AlxGa1−xSb-(110) heterojunctions theoretical evidence for a new common-anion rule

inferredcites →https://doi.org/10.1016/0038-1098(93)90236-gopenalex-snapshot

Evidences of non-commutativity and non-transitivity of band discontinuities in InP-Al(In)As-Ga(In)As heterostructures

inferredcites →https://doi.org/10.1016/0038-1098(95)00337-1openalex-snapshot

Shallow donors in GaN—The binding energy and the electron effective mass

inferredcites →https://doi.org/10.1016/0038-1101(87)90153-5openalex-snapshot

Effective masses and evidence for alloy disorder effects in GaxIn1−xAsyP1−y investigated by shallow donor photoconductivity

inferredcites →https://doi.org/10.1016/0038-1101(93)90044-qopenalex-snapshot

Mechanisms of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb

inferredcites →https://doi.org/10.1016/0038-1101(93)90279-yopenalex-snapshot

Band offsets in GaSb/AlGaAsSb: Correlation with the Schottky barrier height and the depth of native acceptors

inferredcites →https://doi.org/10.1016/0038-1101(94)00111-ropenalex-snapshot

Band offsets in heterojunctions of InGaAsSb/AlGaAsSb

inferredcites →https://doi.org/10.1016/0038-1101(94)90288-7openalex-snapshot

Interface composition control in InAs/GaSb superlattices

inferredcites →https://doi.org/10.1016/0039-6028(83)90561-7openalex-snapshot

Heterostructure devices: A device physicist looks at interfaces

inferredcites →https://doi.org/10.1016/0039-6028(86)90425-5openalex-snapshot

Band offsets at heterointerfaces: Theoretical basis, and review of recent experimental work

inferredcites →https://doi.org/10.1016/0040-6090(76)90423-5openalex-snapshot

Synthesis of III–V semiconductor nitrides by reactive cathodic sputtering

inferredcites →https://doi.org/10.1016/0040-6090(90)90068-oopenalex-snapshot

Near IR optical properties of sputtered InN films

inferredcites →https://doi.org/10.1016/0040-6090(90)90127-yopenalex-snapshot

Optical properties of GaSb/Ga0.69Al0.31Sb single quantum wells grown by molecular beam epitaxy

inferredcites →https://doi.org/10.1016/0042-207x(90)93870-oopenalex-snapshot

Epitaxial layers of indium nitride by microwave-excited metalorganic vapor phase epitaxy

inferredcites →https://doi.org/10.1016/0167-2584(83)90181-0openalex-snapshot

Heterostructure devices: a device physicist looks at interfaces

inferredcites →https://doi.org/10.1016/0169-4332(93)90084-oopenalex-snapshot

Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells

inferredcites →https://doi.org/10.1016/0304-8853(79)90248-8openalex-snapshot

Conduction and valence band effective mass parameters in InSb

inferredcites →https://doi.org/10.1016/0375-9601(88)90589-0openalex-snapshot

Hot photoluminescence and valence band warping in GaAs and InP crytals

inferredcites →https://doi.org/10.1016/0378-4363(77)90068-7openalex-snapshot

Free excitons in InP in high magnetic fields

inferredcites →https://doi.org/10.1016/0378-4363(86)90607-8openalex-snapshot

Pressure induced changes in the effective mass of electrons in GaAs, InP and (GaIn)(AsP)/InP

inferredcites →https://doi.org/10.1016/0749-6036(89)90392-3openalex-snapshot

Interband transitions from the photoreflectance of GaSb/AlSb multiple quantum wells

inferredcites →https://doi.org/10.1016/0749-6036(90)90111-jopenalex-snapshot

Coupled Γ-X electronic states in AlAsGaAs quantum well structures

inferredcites →https://doi.org/10.1016/0749-6036(90)90334-4openalex-snapshot

Staggered-lineup heterojunctions in the system of GaSbInAs

inferredcites →https://doi.org/10.1016/0749-6036(92)90329-4openalex-snapshot

Determination of the conduction-band offset of a single AlGaAs barrier layer using DLTS

inferredcites →https://doi.org/10.1016/0749-6036(92)90361-8openalex-snapshot

Effective mass in the barriers of GaAs/AlAs resonant tunneling double barrier diodes

inferredcites →https://doi.org/10.1016/0921-4526(92)90151-hopenalex-snapshot

Measurement of effective mass in AlAs by cyclotron resonance in high magnetic field

inferredcites →https://doi.org/10.1016/0921-4526(93)90330-9openalex-snapshot

A magneto-optical study of coupled quantum wells in strained GaInSb/GaSb

inferredcites →https://doi.org/10.1016/0921-4526(94)00921-hopenalex-snapshot

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Brillouin scattering study in the GaN epitaxial layer

inferredcites →https://doi.org/10.1016/0921-5107(95)01443-8openalex-snapshot

Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS

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Electronic structure of pseudobinary semiconductor alloys InxGa1−x and InAsxSb1−x

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Novel approach to the calculation of instability regions in GaInAsSb alloys

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OMVPE growth of metastable GaAsSb and GaInAsSb alloys using TBAs and TBDMSb

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Photocurrent and photoluminescence spectroscopy of InAsxP1−x/InP strained quantum wells grown by chemical beam epitaxy

inferredcites →https://doi.org/10.1016/s0022-0248(98)00236-xopenalex-snapshot

Exciton binding energies and band gaps in GaN bulk crystals

inferredcites →https://doi.org/10.1016/s0022-0248(98)00629-0openalex-snapshot

Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy

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Piezoelectric coefficient of GaN measured by laser interferometry

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Microwave cyclotron resonance of hot electrons in p-type GaSb

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inferredcites →https://doi.org/10.1016/s0039-6028(97)00401-9openalex-snapshot

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inferredcites →https://doi.org/10.1063/1.102677openalex-snapshot

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Excitons in Metal‐Halide Perovskites

inferred← citeshttps://doi.org/10.1002/aenm.202505461openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/andp.70258openalex-snapshot

Geometrical Optical Activity Induced by a Continuous Distribution of Screw Dislocations

inferred← citeshttps://doi.org/10.1002/apxr.202400126openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/chem.201700929openalex-snapshot

Inorganic SnIP‐Type Double Helices in Main‐Group Chemistry

inferred← citeshttps://doi.org/10.1002/chem.202101802openalex-snapshot

Chemistry Platform for the Ultrafast Continuous Synthesis of High‐Quality III–V Quantum Dots

inferred← citeshttps://doi.org/10.1002/cphc.201101042openalex-snapshot

Synthesis of Antimony‐Based Nanowires Using the Simple Vapor Deposition Method

inferred← citeshttps://doi.org/10.1002/cphc.201200390openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/cphc.202300417openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/crat.200900454openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/crat.200900534openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/crat.201000268openalex-snapshot

Debye temperature and melting point of II‐VI and III‐V semiconductors

inferred← citeshttps://doi.org/10.1002/crat.201700018openalex-snapshot

Lattice Vibration and Polaron Properties of InSb Under Pressure

inferred← citeshttps://doi.org/10.1002/crat.202200124openalex-snapshot

First‐Principles Study of the Properties of Pmn21‐B1−xAlxAs

inferred← citeshttps://doi.org/10.1002/crat.202300346openalex-snapshot

Opto‐Electronic Properties of Gap1‐xSbx Alloys for IR Applications

inferred← citeshttps://doi.org/10.1002/ctpp.70134openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/eej.23443openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/ente.202401322openalex-snapshot

Simple Smoothing of the Bottom Silicon Surface Using Wet Chemical Etching Methods for Epitaxial III‐V/Silicon Tandem Manufacturing

inferred← citeshttps://doi.org/10.1002/er.7114openalex-snapshot

Modeling and simulation of GaAsPN / GaP quantum dot structure for solar cell in intermediate band solar cell applications

inferred← citeshttps://doi.org/10.1002/er.7232openalex-snapshot

Probable thermoelectric materials for promising candidate of optoelectronics for Ba‐based complex perovskite compounds

inferred← citeshttps://doi.org/10.1002/er.7313openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/ese3.155openalex-snapshot

Design of photovoltaics for modules with 50% efficiency

inferred← citeshttps://doi.org/10.1002/ifm2.70001openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/inf2.12141openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/jnm.2763openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/jnm.70213openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/lpor.201200051openalex-snapshot

Diode laser based light sources for biomedical applications

inferred← citeshttps://doi.org/10.1002/lpor.201200118openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/lpor.202300836openalex-snapshot

Energy and Power Requirements for Alteration of the Refractive Index

inferred← citeshttps://doi.org/10.1002/lpor.202400529openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/lpor.202401751openalex-snapshot

High‐Speed Blue Laser Diodes with InGaN Quantum Barrier for Beyond 36 Gbps Visible Light Communications

inferred← citeshttps://doi.org/10.1002/lpor.202502759openalex-snapshot

Random Telegraph Signal Noise in High‐Gain SWIR Heterojunction Phototransistors

inferred← citeshttps://doi.org/10.1002/lpor.71238openalex-snapshot

Tunable Near‐Infrared IIa Narrowband Organic Photodetectors Enabled by Microcavity–Charge Transfer State Coupling

inferred← citeshttps://doi.org/10.1002/mop.23976openalex-snapshot

Finite element analysis of quantum states in layered quantum semiconductor structures with band nonparabolicity effect

inferred← citeshttps://doi.org/10.1002/nano.202000142openalex-snapshot

Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene

inferred← citeshttps://doi.org/10.1002/nme.7508openalex-snapshot

An energy‐based finite‐strain model for 3D heterostructured materials and its validation by curvature analysis

inferred← citeshttps://doi.org/10.1002/pip.1208openalex-snapshot

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inferred← citeshttps://doi.org/10.1002/pip.2210openalex-snapshot

Basic aspects of the temperature coefficients of concentrator solar cell performance parameters

inferred← citeshttps://doi.org/10.1002/pip.2405openalex-snapshot

Electronic structure of Ge1 − x − y Si x Sn y ternary alloys for multijunction solar cells

inferred← citeshttps://doi.org/10.1002/pip.2495openalex-snapshot

High temperature current-voltage characteristics of InP-based tunnel junctions

inferred← citeshttps://doi.org/10.1002/pip.2537openalex-snapshot

Light absorption and many‐particle electron–phonon interactions in intermediate band quantum well solar cells

inferred← citeshttps://doi.org/10.1002/pip.2585openalex-snapshot

Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over‐50%‐efficient lattice‐matched quad‐junction solar cells

inferred← citeshttps://doi.org/10.1002/pip.2697openalex-snapshot

Concept and demonstration of an intermediate band tandem device for solar energy conversion

inferred← citeshttps://doi.org/10.1002/pip.2895openalex-snapshot

InAlAs photovoltaic cell design for high device efficiency

inferred← citeshttps://doi.org/10.1002/pip.3081openalex-snapshot

The potential and design principle for next‐generation spectrum‐splitting photovoltaics: Targeting 50% efficiency through built‐in filters and generalization of concept

inferred← citeshttps://doi.org/10.1002/pip.3096openalex-snapshot

Bandgap engineered smart three‐terminal solar cell: New perspectives towards very high efficiencies in the silicon world

inferred← citeshttps://doi.org/10.1002/pip.3454openalex-snapshot

InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy

inferred← citeshttps://doi.org/10.1002/pip.3672openalex-snapshot

Enhancing intermediate band solar cell performances through quantum engineering of dot states by droplet epitaxy

inferred← citeshttps://doi.org/10.1002/pip.395openalex-snapshot

Photovoltaics literature survey (No. 10)

inferred← citeshttps://doi.org/10.1002/pip.70010openalex-snapshot

One‐Sun AM0 36% Solar Cell Enhanced by Engineered 2.15 eV Homojunction Top Subcell

inferred← citeshttps://doi.org/10.1002/pip.937openalex-snapshot

Identification of candidate material systems for quantum dot solar cells including the effect of strain

inferred← citeshttps://doi.org/10.1002/pssa.200460902openalex-snapshot

Characterisation of a 760 nm vertical‐cavity surface‐emitting laser structure by reflectance and photomodulated reflectance

inferred← citeshttps://doi.org/10.1002/pssa.200460908openalex-snapshot

A new Fourier transform photo‐modulation spectroscopic technique for narrow band‐gap materials in the mid‐ to far‐infra‐red

inferred← citeshttps://doi.org/10.1002/pssa.200563522openalex-snapshot

Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces

inferred← citeshttps://doi.org/10.1002/pssa.200566036openalex-snapshot

Full‐potential electronic structure calculations of InN(AlN) layer embedded in GaN bulk

inferred← citeshttps://doi.org/10.1002/pssa.200622385openalex-snapshot

Infrared imaging with InAs/GaSb type‐II superlattices

inferred← citeshttps://doi.org/10.1002/pssa.200673325openalex-snapshot

Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures

inferred← citeshttps://doi.org/10.1002/pssa.200673501openalex-snapshot

Hybrid ZnO/III‐nitride light‐emitting diodes: modelling analysis of operation

inferred← citeshttps://doi.org/10.1002/pssa.200673955openalex-snapshot

Contactless electroreflectance and photoluminescence study of highly strained InGaAs(Sb) double quantum wells

inferred← citeshttps://doi.org/10.1002/pssa.200777904openalex-snapshot

The optical Hall effect

inferred← citeshttps://doi.org/10.1002/pssa.200824460openalex-snapshot

Investigation of a contacting scheme for self‐assembled cleaved edge overgrown InAs nanowires and quantum dot arrays

inferred← citeshttps://doi.org/10.1002/pssa.200881402openalex-snapshot

Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP

inferred← citeshttps://doi.org/10.1002/pssa.200881407openalex-snapshot

Room temperature characterisation of InGaAlAs quantum well laser structures using electro‐modulated reflectance and surface photovoltage spectroscopy

inferred← citeshttps://doi.org/10.1002/pssa.200881409openalex-snapshot

Piezoreflectance and photoreflectance study of annealing effects on GaAs0.916Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas‐source molecular beam epitaxy

inferred← citeshttps://doi.org/10.1002/pssa.200881413openalex-snapshot

Fourier transform infrared surface photovoltage spectroscopy for the investigation of mid‐infrared semiconductor lasers

inferred← citeshttps://doi.org/10.1002/pssa.200981414openalex-snapshot

Optical properties and energy transfer in InGaAsN quantum well – InAs quantum dots tunnel injection structures for 1.3 μm emission

inferred← citeshttps://doi.org/10.1002/pssa.201026369openalex-snapshot

Correlation of barrier material and quantum‐well number for InGaN/(In)GaN blue light‐emitting diodes

inferred← citeshttps://doi.org/10.1002/pssa.201100147openalex-snapshot

Simple models for InGaN alloys

inferred← citeshttps://doi.org/10.1002/pssa.201228274openalex-snapshot

Advantages of near‐ultraviolet light‐emitting diodes with polarization‐matched InGaN/AlGaInN multi‐quantum wells

inferred← citeshttps://doi.org/10.1002/pssa.201300721openalex-snapshot

InSb:Mn – A high temperature ferromagnetic semiconductor

inferred← citeshttps://doi.org/10.1002/pssa.201330030openalex-snapshot

Theoretical study on the effect of graded InyGa1−yN layer on p-GaN/InyGa1−yN/n-GaN p-i-n solar cell

inferred← citeshttps://doi.org/10.1002/pssa.201431348openalex-snapshot

A detailed study of self-assembled (Al,Ga)InP quantum dots grown by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1002/pssa.201532556openalex-snapshot

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

inferred← citeshttps://doi.org/10.1002/pssa.201700455openalex-snapshot

Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers

inferred← citeshttps://doi.org/10.1002/pssa.201700461openalex-snapshot

Improving Performance of Algan‐Based Deep‐Ultraviolet Light‐Emitting Diodes by Inserting a Higher Al‐Content Algan Layer Within the Multiple Quantum Wells

inferred← citeshttps://doi.org/10.1002/pssa.201800018openalex-snapshot

Transparency Engineering in Quantum Dot‐Based Memories

inferred← citeshttps://doi.org/10.1002/pssa.201800498openalex-snapshot

Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

inferred← citeshttps://doi.org/10.1002/pssa.201800618openalex-snapshot

Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms‐Range Flash Lamp Annealing

inferred← citeshttps://doi.org/10.1002/pssa.201800913openalex-snapshot

Enhanced Performance of InGaN‐Based Blue LEDs Using an AlGaN/InGaN Super‐Lattice Last Quantum Barrier

inferred← citeshttps://doi.org/10.1002/pssa.201900522openalex-snapshot

A Thermoelectrically Cooled nBn Type‐II Superlattices InAs/InAsSb/B‐AlAsSb Mid‐Wave Infrared Detector

inferred← citeshttps://doi.org/10.1002/pssa.202000164openalex-snapshot

Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates

inferred← citeshttps://doi.org/10.1002/pssa.202100351openalex-snapshot

Improvement of Radiative Recombination Rate and Efficiency Droop of InGaN Light Emitting Diodes with In‐Component‐Graded InGaN Barrier

inferred← citeshttps://doi.org/10.1002/pssa.202200316openalex-snapshot

Improved Performance of InGaN/AlGaN Multiple‐Quantum‐Well Near‐UV Light‐Emitting Diodes with Convex Barriers and Staggered Wells

inferred← citeshttps://doi.org/10.1002/pssa.202200490openalex-snapshot

Suppression of Impact Ionization by Carbon Doping in the GaN Buffer Layer in InAlN/GaN‐Based High Electron Mobility Transistors

inferred← citeshttps://doi.org/10.1002/pssa.202300276openalex-snapshot

Performance of Improvement of AlGaN‐Based Deep UV Light‐Emitting Diode with Two Parts Linearly Graded Barriers

inferred← citeshttps://doi.org/10.1002/pssa.202300561openalex-snapshot

Systematic Study and Review of InP‐based Tera‐Hertz‐ICs Fabrication Process Technology for Beyond 5G/6G Wireless Communication Networks

inferred← citeshttps://doi.org/10.1002/pssa.202400017openalex-snapshot

Determination of the Complex Refractive Index of GaSb1−xBix by Variable‐Angle Spectroscopic Ellipsometry

inferred← citeshttps://doi.org/10.1002/pssa.202400045openalex-snapshot

Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping

inferred← citeshttps://doi.org/10.1002/pssa.202400063openalex-snapshot

Comparative Study on Temperature‐Dependent Internal Quantum Efficiency and Light–Extraction Efficiency in III‐Nitride–, III‐Phosphide–, and III‐Arsenide–based Light‐Emitting Diodes

inferred← citeshttps://doi.org/10.1002/pssa.202500047openalex-snapshot

Advancements and challenges in III‐Nitride Semiconductor‐Based Power Rectifiers

inferred← citeshttps://doi.org/10.1002/pssa.202500981openalex-snapshot

Investigation of Real‐Space Transfer Noise in InGaAs/InAlAs Quantum Wells for Indium Phosphide High Electron‐Mobility Transistors

inferred← citeshttps://doi.org/10.1002/pssb.200301506openalex-snapshot

Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN

inferred← citeshttps://doi.org/10.1002/pssb.200301880openalex-snapshot

Prospects for carrier‐mediated ferromagnetism in GaN

inferred← citeshttps://doi.org/10.1002/pssb.200302030openalex-snapshot

Stability and band gaps of As‐rich and N‐rich GaAsN alloys: Density‐functional supercell calculations

inferred← citeshttps://doi.org/10.1002/pssb.200303184openalex-snapshot

Exciton fine structure in interfacial quantum dots

inferred← citeshttps://doi.org/10.1002/pssb.200303475openalex-snapshot

Narrow bandgap group III‐nitride alloys

inferred← citeshttps://doi.org/10.1002/pssb.200303861openalex-snapshot

Spin/carrier dynamics at semiconductor interfaces using intense, tunable, ultra‐fast lasers

inferred← citeshttps://doi.org/10.1002/pssb.200402037openalex-snapshot

Band structure, metallization and superconductivity of GaP and GaN under high pressure

inferred← citeshttps://doi.org/10.1002/pssb.200402078openalex-snapshot

Hole spin surfaces in A3B5 semiconductors

inferred← citeshttps://doi.org/10.1002/pssb.200405208openalex-snapshot

Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure

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