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Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

https://doi.org/10.1098/rsos.171757
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Complex flow phenomena in vertical MOCVD reactors: Effects on deposition uniformity and interface abruptness
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Thermophoresis of solid particles in horizontal chemical vapor deposition reactors
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Crystal growth of column III nitrides and their applications to short wavelength light emitters
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Different growth behaviors of GaN nanowires grown with Au catalyst and Au + Ga solid solution nano-droplets on Si(111) substrates by using MOCVD
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Gallium Nitride Schottky betavoltaic nuclear batteries
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CFD study on mean flow engine for wind power exploitation
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CFD simulation of air to air enthalpy heat exchanger
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Numerical analysis of In Ga1−N/SnS and Al Ga1−N/SnS heterojunction solar cells
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Influence of phase angle and dead volume on gamma-type Stirling engine power using CFD simulation
inferredcites →https://doi.org/10.1016/j.icheatmasstransfer.2009.03.019openalex-snapshot
Effect of embedding a porous medium on the deposition rate in a vertical rotating MOCVD reactor based on CFD modeling
inferredcites →https://doi.org/10.1016/j.jallcom.2016.07.115openalex-snapshot
Exceptionally long GaN sub-micrometer rods grown by HVPE on a MOCVD-GaN rod template
inferredcites →https://doi.org/10.1016/j.jallcom.2017.02.006openalex-snapshot
Quantum confinement effect in low temperature grown homo-epitaxial GaN nanowall network by laser assisted molecular beam epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2004.09.097openalex-snapshot
Delayed onset of return flow by substrate inclination in model horizontal longitudinal MOCVD processes
inferredcites →https://doi.org/10.1016/j.jcrysgro.2005.08.006openalex-snapshot
Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study
inferredcites →https://doi.org/10.1016/j.jcrysgro.2005.09.050openalex-snapshot
An overview of gallium nitride growth chemistry and its effect on reactor design: Application to a planetary radial-flow CVD system
inferredcites →https://doi.org/10.1016/j.jcrysgro.2005.10.131openalex-snapshot
On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters
inferredcites →https://doi.org/10.1016/j.jcrysgro.2006.04.117openalex-snapshot
Chemical vapor reactions of ZnO growth by metal-organic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2008.04.017openalex-snapshot
CFD optimisation of up-flow vertical HVPE reactor for GaN growth
inferredcites →https://doi.org/10.1016/j.jcrysgro.2011.08.041openalex-snapshot
Numerical investigation of pulsed chemical vapor deposition of aluminum nitride to reduce particle formation
inferredcites →https://doi.org/10.1016/j.jcrysgro.2014.04.015openalex-snapshot
Deposition of GaN films on crystalline rare earth oxides by MOCVD
inferredcites →https://doi.org/10.1016/j.jcrysgro.2014.08.018openalex-snapshot
Numerical simulation of the gallium nitride thin film layer grown on 6-inch wafer by commercial multi-wafer hydride vapor phase epitaxy
inferredcites →https://doi.org/10.1016/j.jcrysgro.2015.02.084openalex-snapshot
Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue ® MOCVD platform
inferredcites →https://doi.org/10.1016/j.jcrysgro.2015.09.003openalex-snapshot
Transport phenomena and the effects of reactor geometry for epitaxial GaN growth in a vertical MOCVD reactor
inferredcites →https://doi.org/10.1016/j.jcrysgro.2016.09.010openalex-snapshot
Species transport and chemical reaction in a MOCVD reactor and their influence on the GaN growth uniformity
inferredcites →https://doi.org/10.1016/j.jcrysgro.2016.10.065openalex-snapshot
The effects of flow multiplicity on GaN deposition in a rotating disk CVD reactor
inferredcites →https://doi.org/10.1016/j.jtice.2008.12.008openalex-snapshot
The effects of shower head orientation and substrate position on the uniformity of GaN growth in a HVPE reactor
inferredcites →https://doi.org/10.1016/j.jtice.2013.05.022openalex-snapshot
Mathematical modeling and optimal design of an MOCVD reactor for GaAs film growth
inferredcites →https://doi.org/10.1016/j.optcom.2016.10.070openalex-snapshot
Simultaneous light emission and detection of InGaN/GaN multiple quantum well diodes for in-plane visible light communication
inferredcites →https://doi.org/10.1016/j.surfcoat.2007.04.080openalex-snapshot
An experimental and computational analysis of a MOCVD process for the growth of Al films using DMEAA
inferredcites →https://doi.org/10.1016/s0022-0248(00)00402-4openalex-snapshot
Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/s0022-0248(00)00812-5openalex-snapshot
Detailed thermal boundary conditions in the 3D fluid-dynamic modelling of horizontal MOVPE reactors
inferredcites →https://doi.org/10.1016/s0022-0248(02)02208-xopenalex-snapshot
Epitaxy growth kinetics of GaN films
inferredcites →https://doi.org/10.1017/cbo9780511779633openalex-snapshot
The Cambridge Dictionary of Statistics
inferredcites →https://doi.org/10.1098/rsos.171757openalex-snapshot
Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model
inferredcites →https://doi.org/10.2307/2291490openalex-snapshot
The Cambridge Dictionary of Statistics in the Medical Sciences.
inferredcites →https://doi.org/10.5061/dryad.63821openalex-snapshot
Data from: Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Mist Chemical Vapor Deposition: A Novel Solution-Based Film Deposition Technique
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A Static, Multisubstrate, In Silico Reactor Design of the MOCVD Process for Uniform Growth of GaN Epitaxial Layers
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Numerical simulation and study of the metal-organic chemical vapor deposition growth of ZnO film
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Process Optimization and Modeling of the Silicon Growth in Trichlorosilane-Hydrogen Gas Mixture in a Planetary CVD Reactor
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