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Origin of electron accumulation at wurtzite InN surfaces
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/1521-3951(200202)229:3<r1::aid-pssb99991>3.0.co;2-oopenalex-snapshot
Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
inferredcites →https://doi.org/10.1002/pssa.200306164openalex-snapshot
Energy gap and optical properties of InxGa1xN
inferredcites →https://doi.org/10.1002/pssb.200303349openalex-snapshot
Control of electron density in InN by Si doping and optical properties of Si‐doped InN
inferredcites →https://doi.org/10.1002/pssb.2221340245openalex-snapshot
A novel self‐consistent theory of the electronic structure of inversion layers in InSb MIS structures
inferredcites →https://doi.org/10.1002/pssc.200303419openalex-snapshot
Correlation between strain, optical and electrical properties of InN grown by MBE
inferredcites →https://doi.org/10.1016/0927-0256(96)00008-0openalex-snapshot
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
inferredcites →https://doi.org/10.1016/s0022-0248(02)01756-6openalex-snapshot
Do we know the fundamental energy gap of InN?
inferredcites →https://doi.org/10.1063/1.1318235openalex-snapshot
Improvement on epitaxial grown of InN by migration enhanced epitaxy
inferredcites →https://doi.org/10.1063/1.1562340openalex-snapshot
Surface charge accumulation of InN films grown by molecular-beam epitaxy
inferredcites →https://doi.org/10.1063/1.1605815openalex-snapshot
Temperature dependence of the fundamental band gap of InN
inferredcites →https://doi.org/10.1063/1.1633681openalex-snapshot
Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys
inferredcites →https://doi.org/10.1063/1.1634691openalex-snapshot
Photoluminescence, depth profile, and lattice instability of hexagonal InN films
inferredcites →https://doi.org/10.1103/physrevb.32.6968openalex-snapshot
Schottky barriers and semiconductor band structures
inferredcites →https://doi.org/10.1103/physrevb.32.8203openalex-snapshot
Electron-energy-loss spectroscopy of multilayered materials: Theoretical aspects and study of interface optical phonons in semiconductor superlattices
inferredcites →https://doi.org/10.1103/physrevb.52.16567openalex-snapshot
Self-interaction corrections in semiconductors
inferredcites →https://doi.org/10.1103/physrevb.54.11169openalex-snapshot
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
inferredcites →https://doi.org/10.1103/physrevb.64.085311openalex-snapshot
Profiling of electron accumulation layers in the near-surface region of InAs (110)
inferredcites →https://doi.org/10.1103/physrevb.65.115206openalex-snapshot
Effective electron mass and phonon modes inn-type hexagonal InN
inferredcites →https://doi.org/10.1103/physrevb.66.201403openalex-snapshot
Effects of the narrow band gap on the properties of InN
inferredcites →https://doi.org/10.1103/physrevlett.46.500openalex-snapshot
Conduction-Band Surface Plasmons in the Electron-Energy-Loss Spectrum of GaAs(110)
inferredcites →https://doi.org/10.1103/physrevlett.52.1242openalex-snapshot
Experimental Evidence for Surface Quenching of the Surface Plasmon on InSb(110)
inferredcites →https://doi.org/10.1103/physrevlett.66.2243openalex-snapshot
Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces
inferredcites →https://doi.org/10.1103/physrevlett.76.3626openalex-snapshot
Charge Accumulation at InAs Surfaces
inferredcites →https://doi.org/10.1103/physrevlett.92.036804openalex-snapshot
Intrinsic Electron Accumulation at Clean InN Surfaces
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Structural, Compositional, and Thermal Stability Studies on In0.96ga0.04n Epilayers Grown by High Pressure Chemical Vapor Deposition
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Anomalous Optical Properties of InN Nanobelts: Evidence of Surface Band Bending and Photoelastic Effects
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Origin of n-type conductivity in nominally undoped InN
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Temperature dependence of carrier lifetimes in InN
inferred← citeshttps://doi.org/10.1002/pssa.200563505openalex-snapshot
Surface band bending at nominally undoped and Mg‐doped InN by Auger Electron Spectroscopy
inferred← citeshttps://doi.org/10.1002/pssa.200563522openalex-snapshot
Scanning tunnelling spectroscopy of quantized electron accumulation at InxGa1−xN surfaces
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Electron concentration and mobility profiles in InN layers grown by MBE
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Doping‐dependence of subband energies in quantized electron accumulation at InN surfaces
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Controlling the conductivity of InN
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Superconductivity of InN with a well defined Fermi surface
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Surface electronic properties of n‐ and p‐type InGaN alloys
inferred← citeshttps://doi.org/10.1002/pssb.200778548openalex-snapshot
Band structure and effective mass of InN under pressure
inferred← citeshttps://doi.org/10.1002/pssb.200778731openalex-snapshot
Mg‐doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements
inferred← citeshttps://doi.org/10.1002/pssb.200945074openalex-snapshot
Ab‐initio theory of semiconductor band structures: New developments and progress
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In rich In1−x Ga x N: Composition dependence of longitudinal optical phonon energy
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Determination of the carrier density dependent electron effective mass in InN using infrared and Raman spectra
inferred← citeshttps://doi.org/10.1002/pssb.201451628openalex-snapshot
Extending group‐III nitrides to the infrared: Recent advances in InN
inferred← citeshttps://doi.org/10.1002/pssb.201552674openalex-snapshot
Half‐Heusler compounds with a 1 eV (1.7 eV) direct band gap, lattice‐matched to GaAs (Si), for solar cell application: A first‐principles study
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Understanding Negative Photoconductivity Observed in c‐Orientated InN Epitaxial Layer
inferred← citeshttps://doi.org/10.1002/pssc.200564146openalex-snapshot
Monte Carlo study of steady‐state and transient transport in wurtzite InN
inferred← citeshttps://doi.org/10.1002/pssc.200565104openalex-snapshot
InN: Fermi level stabilization by low‐energy ion bombardment
inferred← citeshttps://doi.org/10.1002/pssc.200565473openalex-snapshot
The conductivity of Mg‐doped InN
inferred← citeshttps://doi.org/10.1002/pssc.200777455openalex-snapshot
Electron transport properties of indium oxide – indium nitride metal‐oxide‐semiconductor heterostructures
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Ultra‐thin InGaN photodetectors for standing wave interferometry
inferred← citeshttps://doi.org/10.1002/pssc.200778585openalex-snapshot
Photoluminescence and Raman spectroscopy of MBE‐grown InN nanocolumns
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Band bending of n‐InN epilayers and exact solution of the classical Thomas–Fermi equation
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Label-Free Biosensors Based on III-Nitride Semiconductors
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Electron Accumulation in InN Thin Films and Nanowires
inferred← citeshttps://doi.org/10.1007/s00339-018-1845-5openalex-snapshot
Surface-enhanced Raman spectroscopy using 2D plasmons of InN nanostructures
inferred← citeshttps://doi.org/10.1007/s10854-022-08630-xopenalex-snapshot
Structure and bandgap determination of InN grown by RP-MOCVD
inferred← citeshttps://doi.org/10.1007/s11182-017-1035-5openalex-snapshot
BN, AlN, GaN, InN: Charge Neutrality Level, Surface, Interfaces, Doping
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Growth Optimization of an Electron Confining InN/GaN Quantum Well Heterostructure
inferred← citeshttps://doi.org/10.1007/s11664-007-0345-8openalex-snapshot
Effect of MBE Growth Conditions on Multiple Electron Transport in InN
inferred← citeshttps://doi.org/10.1007/s11664-008-0385-8openalex-snapshot
Optical Hall Effect in Hexagonal InN
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Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport
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Chemical modification of InN surface with sulfide solution
inferred← citeshttps://doi.org/10.1016/j.cplett.2007.09.035openalex-snapshot
Improved theoretical calculations of InN in its X3Σ− ground state and in the first 3Π excited state
inferred← citeshttps://doi.org/10.1016/j.ijhydene.2019.06.008openalex-snapshot
Unassisted water splitting with 9.3% efficiency by a single quantum nanostructure photoelectrode
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2005.12.010openalex-snapshot
Nonparabolicity and excitons in optical absorption of InN
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2005.12.100openalex-snapshot
Inversion and accumulation layers at InN surfaces
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2007.04.014openalex-snapshot
Morphology and surface electronic structure of MBE grown InN
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2008.12.015openalex-snapshot
Characteristics of InN grown directly on Al2O3 (0001) substrates by pulsed laser deposition
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2011.05.019openalex-snapshot
Stable structure and effects of oxygen on InN (101¯0) and (112¯0) surfaces
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2018.03.027openalex-snapshot
Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique
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Structural, elastic and electronic properties of GaSe under biaxial and uniaxial compressive stress
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Sputtered growth of high mobility InN thin films on different substrates using Cu-ZnO buffer layer
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InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage
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Ab-initio study of electronic and optical properties of InN in wurtzite and cubic phases
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In-adlayers on non-polar and polar InN surfaces: Ion scattering and photoemission studies
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The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
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Investigation of graphene/InN nanowire based mixed dimensional barristors with widely tunable Schottky barrier for highly sensitive multimodal gas sensing applications
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Optical properties of InN—the bandgap question
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Two dimensional electron gas in InN-based heterostructures: Effects of spontaneous and piezoelectric polarization
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Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition
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The influence of conduction band plasmons on core-level photoemission spectra of InN
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Surface states and accumulation nanolayer induced by Ba and Cs adsorption on the n-GaN(0001) surface
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Potassium and ion beam induced electron accumulation in InN
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Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy
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Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys
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Nature of the Infrared Transition of Colloidal Indium Nitride Nanocrystals: Nonparabolicity Effects on the Plasmonic Behavior of Doped Semiconductor Nanomaterials
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Charge Storage and Quantum Confinement Resilience in Colloidal Indium Nitride Nanocrystals
inferred← citeshttps://doi.org/10.1021/acs.nanolett.5b04461openalex-snapshot
Surface Chemically Switchable Ultraviolet Luminescence from Interfacial Two-Dimensional Electron Gas
inferred← citeshttps://doi.org/10.1021/acsami.5c14997openalex-snapshot
Surface-Oxidized Heterojunction In 2 O 3 /InN Core–Shell Nanorods on V-Grooved Si(111) for Enhanced Self-Powered Near-Infrared Photodetection
inferred← citeshttps://doi.org/10.1021/acsanm.3c00732openalex-snapshot
Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics
inferred← citeshttps://doi.org/10.1021/acsnano.1c09636openalex-snapshot
Large Area Ultrathin InN and Tin Doped InN Nanosheets Featuring 2D Electron Gases
inferred← citeshttps://doi.org/10.1021/ja204639yopenalex-snapshot
Sources of Conductivity and Doping Limits in CdO from Hybrid Density Functional Theory
inferred← citeshttps://doi.org/10.1021/nl060547xopenalex-snapshot
Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires
inferred← citeshttps://doi.org/10.1021/nl062886wopenalex-snapshot
Effects of Quantum Confinement on the Doping Limit of Semiconductor Nanowires
inferred← citeshttps://doi.org/10.1021/nl070852yopenalex-snapshot
Electrically Excited Infrared Emission from InN Nanowire Transistors
inferred← citeshttps://doi.org/10.1021/nl300476dopenalex-snapshot
Tuning the Surface Charge Properties of Epitaxial InN Nanowires
inferred← citeshttps://doi.org/10.1021/nl8036799openalex-snapshot
Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface
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Metalorganic chemical vapor deposition of InN quantum dots and nanostructures
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Field-effect transistors based on cubic indium nitride
inferred← citeshttps://doi.org/10.1039/c3nr03991aopenalex-snapshot
Oxygen mediated synthesis of high quality InN nanowires above their decomposition temperature
inferred← citeshttps://doi.org/10.1039/c4cp02870hopenalex-snapshot
Native point defects in CuIn 1−x Ga x Se 2 : hybrid density functional calculations predict the origin of p- and n-type conductivity
inferred← citeshttps://doi.org/10.1039/c4ra02533dopenalex-snapshot
Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment
inferred← citeshttps://doi.org/10.1063/1.1767608openalex-snapshot
Surface chemical modification of InN for sensor applications
inferred← citeshttps://doi.org/10.1063/1.1977212openalex-snapshot
Resonant localized donor state above the conduction band minimum in InN
inferred← citeshttps://doi.org/10.1063/1.2158133openalex-snapshot
Temperature dependence of mobility and carrier density in InN films
inferred← citeshttps://doi.org/10.1063/1.2166195openalex-snapshot
Low-field electron mobility in wurtzite InN
inferred← citeshttps://doi.org/10.1063/1.2187513openalex-snapshot
Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition
inferred← citeshttps://doi.org/10.1063/1.2201752openalex-snapshot
Nonparabolicity effect on bulk transport properties in wurtzite InN
inferred← citeshttps://doi.org/10.1063/1.2213170openalex-snapshot
Band offsets of high K gate oxides on III-V semiconductors
inferred← citeshttps://doi.org/10.1063/1.2363234openalex-snapshot
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
inferred← citeshttps://doi.org/10.1063/1.2364456openalex-snapshot
Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/1.2364666openalex-snapshot
Model for the thickness dependence of electron concentration in InN films
inferred← citeshttps://doi.org/10.1063/1.2432477openalex-snapshot
Monte Carlo calculation of two-dimensional electron gas mobility in InN-based heterostructures
inferred← citeshttps://doi.org/10.1063/1.2721365openalex-snapshot
Reduced surface electron accumulation at InN films by ozone induced oxidation
inferred← citeshttps://doi.org/10.1063/1.2724900openalex-snapshot
Thermal stability of Ohmic contacts to InN
inferred← citeshttps://doi.org/10.1063/1.2747592openalex-snapshot
Effect of surface oxidation on electron transport in InN thin films
inferred← citeshttps://doi.org/10.1063/1.2775807openalex-snapshot
Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces
inferred← citeshttps://doi.org/10.1063/1.2814035openalex-snapshot
InN-based anion selective sensors in aqueous solutions
inferred← citeshttps://doi.org/10.1063/1.2840051openalex-snapshot
Effects of dislocations on electron transport in wurtzite InN
inferred← citeshttps://doi.org/10.1063/1.2903146openalex-snapshot
Electronic and photoconductive properties of ultrathin InGaN photodetectors
inferred← citeshttps://doi.org/10.1063/1.2936838openalex-snapshot
Anion detection using ultrathin InN ion selective field effect transistors
inferred← citeshttps://doi.org/10.1063/1.2953094openalex-snapshot
Electronic structure and effective masses of InN under pressure
inferred← citeshttps://doi.org/10.1063/1.3033373openalex-snapshot
Band bending at the surfaces of In-rich InGaN alloys
inferred← citeshttps://doi.org/10.1063/1.3059569openalex-snapshot
Branch-point energies and band discontinuities of III-nitrides and III-/II-oxides from quasiparticle band-structure calculations
inferred← citeshttps://doi.org/10.1063/1.3073930openalex-snapshot
Depletion of surface accumulation charge in InN by anodic oxidation
inferred← citeshttps://doi.org/10.1063/1.3074311openalex-snapshot
Ionization energy levels in Mn-doped InxGa1−xN alloys
inferred← citeshttps://doi.org/10.1063/1.3116120openalex-snapshot
Superconductivity in heavily compensated Mg-doped InN
inferred← citeshttps://doi.org/10.1063/1.3155798openalex-snapshot
When group-III nitrides go infrared: New properties and perspectives
inferred← citeshttps://doi.org/10.1063/1.3167823openalex-snapshot
Abnormal magnetic-field dependence of Hall coefficient in InN epilayers
inferred← citeshttps://doi.org/10.1063/1.3216064openalex-snapshot
Investigation on −c-InN and a-InN:Mg field effect transistors under electrolyte gate bias
inferred← citeshttps://doi.org/10.1063/1.3216071openalex-snapshot
Coulomb blockade behavior in an indium nitride nanowire with disordered surface states
inferred← citeshttps://doi.org/10.1063/1.3273380openalex-snapshot
Charge transport and trapping in InN nanowires investigated by scanning probe microscopy
inferred← citeshttps://doi.org/10.1063/1.3284086openalex-snapshot
Epitaxial growth, electrical and optical properties of a-plane InN on r-plane sapphire
inferred← citeshttps://doi.org/10.1063/1.3318685openalex-snapshot
Effects of (NH4)2Sx treatment on indium nitride surfaces
inferred← citeshttps://doi.org/10.1063/1.3599892openalex-snapshot
Confocal Raman depth-scanning spectroscopic study of phonon−plasmon modes in GaN epilayers
inferred← citeshttps://doi.org/10.1063/1.3663527openalex-snapshot
Pulsed terahertz emission from GaN/InN heterostructure
inferred← citeshttps://doi.org/10.1063/1.3691830openalex-snapshot
Magnetic-field and temperature dependence of the energy gap in InN nanobelt
inferred← citeshttps://doi.org/10.1063/1.4758701openalex-snapshot
Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots
inferred← citeshttps://doi.org/10.1063/1.4774295openalex-snapshot
Ab-initio study of Mg-doped InN(0001) surface
inferred← citeshttps://doi.org/10.1063/1.4792259openalex-snapshot
Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 × 2 transfer-matrix algebra
inferred← citeshttps://doi.org/10.1063/1.4795718openalex-snapshot
P-type InGaN across the entire alloy composition range
inferred← citeshttps://doi.org/10.1063/1.4796093openalex-snapshot
Tight-binding branch-point energies and band offsets for cubic InN, GaN, AlN, and AlGaN alloys
inferred← citeshttps://doi.org/10.1063/1.4820483openalex-snapshot
Sulfur passivation of surface electrons in highly Mg-doped InN
inferred← citeshttps://doi.org/10.1063/1.4824823openalex-snapshot
Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/1.4896912openalex-snapshot
Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces
inferred← citeshttps://doi.org/10.1063/1.4927267openalex-snapshot
Bias-free lateral terahertz emitters—A simulation study
inferred← citeshttps://doi.org/10.1063/1.4941733openalex-snapshot
Electronic transport through Al/InN nanowire/Al junctions
inferred← citeshttps://doi.org/10.1063/1.4984840openalex-snapshot
Anomalous surface potential behavior observed in InN by photoassisted Kelvin probe force microscopy
inferred← citeshttps://doi.org/10.1063/1.5086454openalex-snapshot
Ultrafast growth rate and high mobility In2O3 films grown on c-sapphire via low pressure chemical vapor deposition
inferred← citeshttps://doi.org/10.1063/5.0035203openalex-snapshot
Growth of InN ultrathin films on AlN for the application to field-effect transistors
inferred← citeshttps://doi.org/10.1063/5.0179410openalex-snapshot
Enhancing indium bilayer nitridation through novel hydrogen insertion process in InN epitaxy: A kinetic mechanism
inferred← citeshttps://doi.org/10.1080/10408430903352082openalex-snapshot
One-Dimensional Group III-Nitrides: Growth, Properties, and Applications in Nanosensing and Nano-Optoelectronics
inferred← citeshttps://doi.org/10.1080/17458080.2010.493183openalex-snapshot
Synthesis of GaN nanowires by CVD method: effect of reaction temperature
inferred← citeshttps://doi.org/10.1088/0022-3727/42/18/185009openalex-snapshot
Magnetoresistance fluctuations in a weak disorder indium nitride nanowire
inferred← citeshttps://doi.org/10.1088/0022-3727/45/21/215102openalex-snapshot
Near-infrared electroluminescence emission from an n-InN nanodots/p-Si heterojunction structure
inferred← citeshttps://doi.org/10.1088/0953-8984/21/17/174201openalex-snapshot
Unintentional conductivity of indium nitride: transport modelling and microscopic origins
inferred← citeshttps://doi.org/10.1088/0957-4484/19/41/415202openalex-snapshot
Electronic transport mechanism and photocurrent generations of single-crystalline InN nanowires
inferred← citeshttps://doi.org/10.1088/0957-4484/22/29/295701openalex-snapshot
Growth direction modulation and diameter-dependent mobility in InN nanowires
inferred← citeshttps://doi.org/10.1088/0957-4484/23/8/085205openalex-snapshot
Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1−xN core/shell nanowire heterostructures on Si(111) substrates
inferred← citeshttps://doi.org/10.1088/1361-648x/29/5/053001openalex-snapshot
A unified perspective of complex band structure: interpretations, formulations, and applications
inferred← citeshttps://doi.org/10.1088/1361-6528/aafe49openalex-snapshot
Calculations of defect states in various sizes of InN nanowires
inferred← citeshttps://doi.org/10.1088/1361-6528/ac171aopenalex-snapshot
Electrically or chemically tunable photodetector with ultra high responsivity using graphene/InN nanowire based mixed dimensional barristors
inferred← citeshttps://doi.org/10.1088/1361-6641/aa9b57openalex-snapshot
Electrical characterization of Si/InN nanowire heterojunctions
inferred← citeshttps://doi.org/10.1103/physrevb.70.115333openalex-snapshot
Temperature invariance of InN electron accumulation
inferred← citeshttps://doi.org/10.1103/physrevb.72.205106openalex-snapshot
Band structures and optical spectra of InN polymorphs: Influence of quasiparticle and excitonic effects
inferred← citeshttps://doi.org/10.1103/physrevb.72.245319openalex-snapshot
Valence-band structure of InN from x-ray photoemission spectroscopy
inferred← citeshttps://doi.org/10.1103/physrevb.75.115312openalex-snapshot
Variation of band bending at the surface of Mg-doped InGaN: Evidence of p -type conductivity across the composition range
inferred← citeshttps://doi.org/10.1103/physrevb.75.205204openalex-snapshot
Dielectric function and Van Hove singularities for In-rich InxGa1−xN alloys: Comparison of N- and metal-face materials
inferred← citeshttps://doi.org/10.1103/physrevb.76.035309openalex-snapshot
Influence of defects on the absorption edge of InN thin films: The band gap value
inferred← citeshttps://doi.org/10.1103/physrevb.76.041303openalex-snapshot
Effects of surface states on electrical characteristics of InN and In1−xGaxN
inferred← citeshttps://doi.org/10.1103/physrevb.76.075313openalex-snapshot
In adlayers on c -plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy
inferred← citeshttps://doi.org/10.1103/physrevb.76.235325openalex-snapshot
Classical and quantum solutions of the planar accumulation layer problem within the parabolic effective-mass approximation
inferred← citeshttps://doi.org/10.1103/physrevb.77.125305openalex-snapshot
Nonparabolic coupled Poisson-Schrödinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces
inferred← citeshttps://doi.org/10.1103/physrevb.78.165127openalex-snapshot
Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy
inferred← citeshttps://doi.org/10.1103/physrevb.79.115305openalex-snapshot
Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation
inferred← citeshttps://doi.org/10.1103/physrevb.79.155210openalex-snapshot
Raman scattering study of the long-wavelength longitudinal-optical-phonon–plasmon coupled modes in high-mobility InN layers
inferred← citeshttps://doi.org/10.1103/physrevb.84.205304openalex-snapshot
Electronic properties of polar and nonpolar InN surfaces: A quasiparticle picture
inferred← citeshttps://doi.org/10.1103/physrevb.85.245313openalex-snapshot
Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires
inferred← citeshttps://doi.org/10.1103/physrevb.86.195308openalex-snapshot
Determination of valence-band offset at cubic CdSe/ZnTe type-II heterojunctions: A combined experimental and theoretical approach
inferred← citeshttps://doi.org/10.1103/physrevlett.101.106803openalex-snapshot
Absence of Fermi-Level Pinning at Cleaved Nonpolar InN Surfaces
inferred← citeshttps://doi.org/10.1103/physrevlett.117.027601openalex-snapshot
Manipulation of Nanoscale Domain Switching Using an Electron Beam with Omnidirectional Electric Field Distribution
inferred← citeshttps://doi.org/10.1103/physrevlett.97.237601openalex-snapshot
Quantized Electron Accumulation States in Indium Nitride Studied by Angle-Resolved Photoemission Spectroscopy
inferred← citeshttps://doi.org/10.1109/commad.2008.4802099openalex-snapshot
Unravelling the free electron behavior in InN
inferred← citeshttps://doi.org/10.1109/icsens.2013.6688187openalex-snapshot
InN nanowires based multi-modal environmental sensors
inferred← citeshttps://doi.org/10.1109/inss.2009.5409932openalex-snapshot
InN-based anion selective sensing devices
inferred← citeshttps://doi.org/10.1109/jsen.2010.2080317openalex-snapshot
Highly Sensitive pH Sensing Using an Indium Nitride Ion-Sensitive Field-Effect Transistor
inferred← citeshttps://doi.org/10.1109/nano.2014.6968185openalex-snapshot
Suspended InN nanobeam resonators: Synthesis, characterization and finite element analysis
inferred← citeshttps://doi.org/10.1109/secon.2013.6567379openalex-snapshot
Tunneling and sensing effects of high quality InN nanowires
inferred← citeshttps://doi.org/10.1109/smicnd.2008.4703325openalex-snapshot
InN: The low bandgap III-nitride semiconductor
inferred← citeshttps://doi.org/10.1116/1.1927108openalex-snapshot
Clean wurtzite InN surfaces prepared with atomic hydrogen
inferred← citeshttps://doi.org/10.1116/1.2712185openalex-snapshot
Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition
inferred← citeshttps://doi.org/10.1116/1.4818426openalex-snapshot
Band offsets, Schottky barrier heights, and their effects on electronic devices
inferred← citeshttps://doi.org/10.1116/1.4936928openalex-snapshot
Electrical characterization of atomic layer deposited Al2O3/InN interfaces
inferred← citeshttps://doi.org/10.1134/s0021364010120118openalex-snapshot
Electronic structure of a Ba/n-AlGaN(0001) interface and the formation of a degenerate 2D electron gas
inferred← citeshttps://doi.org/10.1134/s0021364022100332openalex-snapshot
Inhomogeneity of the Current Flow in High-Quality InN Nanowires
inferred← citeshttps://doi.org/10.1134/s106377612201006xopenalex-snapshot
Investigation of Peculiarities of Coherent Magnetotransport of InN Nanowires Using Scanning Gate Microscopy
inferred← citeshttps://doi.org/10.1134/s1063782607090023openalex-snapshot
The model of self-compensation and pinning of the Fermi level in irradiated semiconductors
inferred← citeshttps://doi.org/10.1134/s1063782609060141openalex-snapshot
The quantum solution of the accumulation layer problem of n-InN
inferred← citeshttps://doi.org/10.1134/s1063782610090095openalex-snapshot
Charge neutrality level and electronic properties of GaSe under pressure
inferred← citeshttps://doi.org/10.1134/s1063783409020310openalex-snapshot
Charge accumulation nanolayer: A 2D electronic channel in Cs/n-InGaN ultrathin interfaces
inferred← citeshttps://doi.org/10.1142/s0217979205031298openalex-snapshot
AB INITIO STUDY OF MAGNETISM IN PALLADIUM CLUSTERS SUPPORTED ON (110) SURFACE OF TiO 2 RUTILE
inferred← citeshttps://doi.org/10.1143/apex.5.031003openalex-snapshot
Experimental Determination of Electron Affinities for InN and GaN Polar Surfaces
inferred← citeshttps://doi.org/10.1143/apex.5.101201openalex-snapshot
Epitaxial Growth of ZnO/InN Core/Shell Nanostructures for Solar Cell Applications
inferred← citeshttps://doi.org/10.1149/2.0212001jssopenalex-snapshot
Correlation of Threading Dislocations with the Electron Concentration and Mobility in InN Heteroepitaxial Layers Grown by MBE
inferred← citeshttps://doi.org/10.1149/2.0301807jssopenalex-snapshot
Pentacene Coated Atop of Ultrathin InN Gas Sensor Device for the Selective Sensing of Ammonia Gas for Liver Malfunction Application
inferred← citeshttps://doi.org/10.1149/2.0311807jssopenalex-snapshot
Platinum Coating on an Ultrathin InN Epilayer as a Dual Gas Sensor for Selective Sensing of Ammonia and Acetone by Temperature Modulation for Liver Malfunction and Diabetes Applications
inferred← citeshttps://doi.org/10.1186/1556-276x-7-574openalex-snapshot
Acceptor formation in Mg-doped, indium-rich Ga x In1−xN: evidence for p-type conductivity
inferred← citeshttps://doi.org/10.1201/9781420078107-c10openalex-snapshot
Electronic Properties of InN and InGaN
inferred← citeshttps://doi.org/10.1201/9781420078107-c12openalex-snapshot
Surface Electronic Properties of InN and Related Alloys
inferred← citeshttps://doi.org/10.1201/9781420078107-c6openalex-snapshot
Electronic States in InN and Lattice Dynamics of InN and InGaN
inferred← citeshttps://doi.org/10.1201/9781420078107-c8openalex-snapshot
Theory of InN Bulk Band Structure
inferred← citeshttps://doi.org/10.1209/0295-5075/83/47003openalex-snapshot
Observation of an inverted band structure near the surface of InN
inferred← citeshttps://doi.org/10.12693/aphyspola.119.212openalex-snapshot
Efficient Terahertz Emission from InGaN/GaN Heterostructure
inferred← citeshttps://doi.org/10.1557/proc-0892-ff08-06openalex-snapshot
Temperature dependence of transport properties of InN films
inferred← citeshttps://doi.org/10.1557/proc-1178-aa01-12openalex-snapshot
Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy
inferred← citeshttps://doi.org/10.1557/proc-1202-i06-04openalex-snapshot
pH and Biological Sensing of Ultrathin (10nm) InN Based ISFETs
inferred← citeshttps://doi.org/10.20868/upm.thesis.33751openalex-snapshot
Crecimiento y caracterización de Nitruro de Indio por epitaxia de haces moleculares para aplicaciones en el infrarrojo cercano
inferred← citeshttps://doi.org/10.26021/8272openalex-snapshot
Photoluminescence of High Quality Epitaxial p-type InN
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