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Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/pssb.200562246openalex-snapshot
The characterization of InN growth under high‐pressure CVD conditions
inferredcites →https://doi.org/10.1016/j.mseb.2005.10.032openalex-snapshot
InN growth by high-pressures chemical vapor deposition: Real-time optical growth characterization
inferredcites →https://doi.org/10.1016/j.spmi.2005.03.004openalex-snapshot
InN, latest development and a review of the band-gap controversy
inferredcites →https://doi.org/10.1016/s0039-6028(99)00403-3openalex-snapshot
HREELS of H/GaN(0001): evidence for Ga termination
inferredcites →https://doi.org/10.1063/1.1562340openalex-snapshot
Surface charge accumulation of InN films grown by molecular-beam epitaxy
inferredcites →https://doi.org/10.1063/1.1595135openalex-snapshot
Indium nitride (InN): A review on growth, characterization, and properties
inferredcites →https://doi.org/10.1063/1.2172718openalex-snapshot
Lattice vibrations in hexagonal Ga1−xMnxN epitaxial films on c-plane sapphire substrates by infrared reflectance spectra
inferredcites →https://doi.org/10.1063/1.2187513openalex-snapshot
Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition
inferredcites →https://doi.org/10.1063/1.2352797openalex-snapshot
Characterization of InN layers grown by high-pressure chemical vapor deposition
inferredcites →https://doi.org/10.1103/physrevb.68.235204openalex-snapshot
Optical properties of Si-doped InN grown on sapphire (0001)
inferredcites →https://doi.org/10.1103/physrevb.69.201307openalex-snapshot
Origin of electron accumulation at wurtzite InN surfaces
inferredcites →https://doi.org/10.1103/physrevb.70.115333openalex-snapshot
Temperature invariance of InN electron accumulation
inferredcites →https://doi.org/10.1103/physrevlett.92.036804openalex-snapshot
Intrinsic Electron Accumulation at Clean InN Surfaces
inferredcites →https://doi.org/10.1116/1.1771672openalex-snapshot
Indium nitride: Evidence of electron accumulation
inferredcites →https://doi.org/10.1116/1.1927108openalex-snapshot
Clean wurtzite InN surfaces prepared with atomic hydrogen
inferredcites →https://doi.org/10.5860/choice.30-5638openalex-snapshot
Numerical recipes in C: the art of scientific computing
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4198261openalex-extracted
Structural, Compositional, and Thermal Stability Studies on In0.96ga0.04n Epilayers Grown by High Pressure Chemical Vapor Deposition
inferred← citeshttps://doi.org/10.1002/pssb.202000219openalex-snapshot
Understanding Negative Photoconductivity Observed in c‐Orientated InN Epitaxial Layer
inferred← citeshttps://doi.org/10.1007/s00339-018-2374-yopenalex-snapshot
Generation of light-induced surface current in c-oriented InN epitaxial layers
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2018.03.027openalex-snapshot
Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique
inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2020.125574openalex-snapshot
Kinetically stabilized high-temperature InN growth
inferred← citeshttps://doi.org/10.1016/j.susc.2008.02.003openalex-snapshot
Desorption of hydrogen from InN observed by HREELS
inferred← citeshttps://doi.org/10.1016/j.susc.2014.10.004openalex-snapshot
Potassium and ion beam induced electron accumulation in InN
inferred← citeshttps://doi.org/10.1016/j.susc.2017.09.006openalex-snapshot
Fuchs–Kliewer phonons of H-covered and clean GaN (11¯00)
inferred← citeshttps://doi.org/10.1021/acs.jpcc.0c04549openalex-snapshot
Strong Near-Field Light–Matter Interaction in Plasmon-Resonant Tip-Enhanced Raman Scattering in Indium Nitride
inferred← citeshttps://doi.org/10.1038/srep02368openalex-snapshot
Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures
inferred← citeshttps://doi.org/10.1039/c4ra02533dopenalex-snapshot
Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment
inferred← citeshttps://doi.org/10.1063/1.4792259openalex-snapshot
Optical characterization of free electron concentration in heteroepitaxial InN layers using Fourier transform infrared spectroscopy and a 2 × 2 transfer-matrix algebra
inferred← citeshttps://doi.org/10.1116/1.3596619openalex-snapshot
Observation of NH2 species on tilted InN (011−1) facets
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