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Surface structure, composition, and polarity of indium nitride grown by high-pressure chemical vapor deposition

https://doi.org/10.1063/1.2187513
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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/pssb.200562246openalex-snapshot
The characterization of InN growth under high‐pressure CVD conditions
inferredcites →https://doi.org/10.1016/0368-2048(93)80114-2openalex-snapshot
Interaction of InP(110) with atomic hydrogen: a stretching mode investigation
inferredcites →https://doi.org/10.1016/j.mseb.2005.10.032openalex-snapshot
InN growth by high-pressures chemical vapor deposition: Real-time optical growth characterization
inferredcites →https://doi.org/10.1016/j.spmi.2005.03.004openalex-snapshot
InN, latest development and a review of the band-gap controversy
inferredcites →https://doi.org/10.1016/s0039-6028(00)00250-8openalex-snapshot
Vibrational and electronic excitations at GaN{0001} surfaces
inferredcites →https://doi.org/10.1016/s0039-6028(02)01391-2openalex-snapshot
Vibrational characterization of NH and NH2 reaction intermediates on the Ru(110) surface
inferredcites →https://doi.org/10.1016/s0039-6028(96)00895-3openalex-snapshot
Density functional and infrared spectroscopy studies of bonding and vibrations of NH species adsorbed on the Ru(001) surface: a reassignment of the bending mode band
inferredcites →https://doi.org/10.1016/s0039-6028(96)01050-3openalex-snapshot
Vibrational modes of hydrogen and deuterium at InP(110) surfaces
inferredcites →https://doi.org/10.1016/s0039-6028(99)00274-5openalex-snapshot
Structural, vibrational and electronic properties of faceted GaN (0001) surfaces
inferredcites →https://doi.org/10.1016/s0039-6028(99)00291-5openalex-snapshot
Surface reactions of trimethylgallium on MOVPE-grown GaN(0001)
inferredcites →https://doi.org/10.1016/s0039-6028(99)00403-3openalex-snapshot
HREELS of H/GaN(0001): evidence for Ga termination
inferredcites →https://doi.org/10.1063/1.1595135openalex-snapshot
Indium nitride (InN): A review on growth, characterization, and properties
inferredcites →https://doi.org/10.1063/1.359215openalex-snapshot
Formation of thin AlN films on NiAl(001) upon thermal decomposition of ammonia
inferredcites →https://doi.org/10.1088/0953-8984/7/40/004openalex-snapshot
Structure and dynamics of hydrogenated GaAs(110) and InP(110) surfaces
inferredcites →https://doi.org/10.1103/physrev.140.a2076openalex-snapshot
Optical Modes of Vibration in an Ionic Crystal Slab
inferredcites →https://doi.org/10.1103/physrevb.35.8015openalex-snapshot
Comparative high-resolution electron-energy-loss spectroscopy study of hydrogen adsorption on GaAs and InP (111) and (1¯ 1¯ 1¯) surfaces
inferredcites →https://doi.org/10.1103/physrevb.69.201307openalex-snapshot
Origin of electron accumulation at wurtzite InN surfaces
inferredcites →https://doi.org/10.1103/physrevb.70.115333openalex-snapshot
Temperature invariance of InN electron accumulation
inferredcites →https://doi.org/10.1103/physrevlett.92.036804openalex-snapshot
Intrinsic Electron Accumulation at Clean InN Surfaces
inferredcites →https://doi.org/10.1116/1.1771672openalex-snapshot
Indium nitride: Evidence of electron accumulation
inferredcites →https://doi.org/10.1116/1.1894422openalex-snapshot
Real-time optical monitoring of ammonia flow and decomposition kinetics under high-pressure chemical vapor deposition conditions
inferredcites →https://doi.org/10.1116/1.1927108openalex-snapshot
Clean wurtzite InN surfaces prepared with atomic hydrogen

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4198261openalex-extracted
Structural, Compositional, and Thermal Stability Studies on In0.96ga0.04n Epilayers Grown by High Pressure Chemical Vapor Deposition
inferred← citeshttps://doi.org/10.1007/978-3-662-47736-6_152openalex-snapshot
9.7.3 Semiconductor
inferred← citeshttps://doi.org/10.1016/j.susc.2007.07.018openalex-snapshot
Surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition
inferred← citeshttps://doi.org/10.1016/j.susc.2008.02.003openalex-snapshot
Desorption of hydrogen from InN observed by HREELS
inferred← citeshttps://doi.org/10.1063/1.5126625openalex-snapshot
Influence of plasma-activated nitrogen species on PA-MOCVD of InN
inferred← citeshttps://doi.org/10.1088/0268-1242/29/11/113001openalex-snapshot
Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides
inferred← citeshttps://doi.org/10.1103/physrevb.86.245304openalex-snapshot
Formation of polar InN with surface Fermi level near the valence band maximum by means of ammonia nitridation
inferred← citeshttps://doi.org/10.1103/physrevb.91.245305openalex-snapshot
Hydrogen adsorbed at N-polar InN: Significant changes in the surface electronic properties
inferred← citeshttps://doi.org/10.1116/1.2712185openalex-snapshot
Carrier concentration and surface electron accumulation in indium nitride layers grown by high pressure chemical vapor deposition
inferred← citeshttps://doi.org/10.1116/1.3596619openalex-snapshot
Observation of NH2 species on tilted InN (011−1) facets
inferred← citeshttps://doi.org/10.1116/1.4901873openalex-snapshot
Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study
inferred← citeshttps://doi.org/10.3384/9789180750738openalex-snapshot
A Study of Group 13-Nitride Atomic Layer Deposition : Computational Chemistry Modelling of Atomistic Deposition Processes
inferred← citeshttps://doi.org/10.48550/arxiv.2003.10067openalex-snapshot
Supersaturation model for InN PA-MOCVD
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