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AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

https://doi.org/10.1109/led.2022.3220877

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

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Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride

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Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition

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Semiconductor Device Physics and Design

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Theoretical limitations on the broadband matching of arbitrary impedances

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Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures

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Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

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Piezoelectric coefficients and spontaneous polarization of ScAlN

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Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition

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Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

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40 W Ka-Band Single and Dual Output GaN MMIC Power Amplifiers on SiC

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A High Efficiency, Ka-Band, GaN-on-SiC MMIC with Low Compression

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Broadband GaN DHFET Traveling Wave Amplifiers with up to 120 GHz Bandwidth

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Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

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A baseband-65GHz High Linearity-Bandwidth GaN LNA using a 1.7A/mm High Current Density ScAlN based GaN HEMT Technology

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A 20W 2-20 GHz GaN MMIC Power Amplifier Using a Decade Bandwidth Transformer-Based Power Combiner

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Qorvo's Emerging GaN Technologies for mmWave Applications

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Advances in the Super-Lattice Castellated Field Effect Transistor (SLCFET) for High Power Density, Energy Efficient RF Amplification

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Emerging Millimeter-Wave Device Technology - Next Generation GaN and Beyond

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First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth

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ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

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RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

inferredcites →https://doi.org/10.1109/mwsym.2015.7166776openalex-snapshot

High power and high efficiency Ka band power amplifier

inferredcites →https://doi.org/10.1109/mwsym.2016.7540019openalex-snapshot

Design and performance of 16–40GHz GaN distributed power amplifier MMICs utilizing an advanced 0.15µm GaN process

inferredcites →https://doi.org/10.1109/mwsym.2019.8700845openalex-snapshot

GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers

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A 241-GHz-Bandwidth Distributed Amplifier with 10-dBm P1dB in 0.25-μm InP DHBT Technology

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High Power Density ScAlN-Based Heterostructure FETs for mm-Wave Applications

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Watt-level non-uniform distributed 6–37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology

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Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

inferredcites →https://doi.org/10.1109/ted.2021.3140016openalex-snapshot

Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors

inferredcites →https://doi.org/10.1109/tmtt.2021.3065108openalex-snapshot

Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28–38-GHz GaN Power Amplifier MMIC

inferredcites →https://doi.org/10.23919/mikon.2018.8405187openalex-snapshot

mm-Wave operation of AlN/GaN-devices and MMICs at V- & W-band

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films

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Chemical Vapor Deposition of Nitrides by Carbon‐Free Brominated Precursors

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inferred← citeshttps://doi.org/10.1016/j.mejo.2023.105923openalex-snapshot

Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications

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inferred← citeshttps://doi.org/10.1016/j.micrna.2026.208674openalex-snapshot

Maximizing power efficiency in GaN HEMTs: The role of ScAlN integration through n2DEG analytical modeling and 3D simulations

inferred← citeshttps://doi.org/10.1016/j.mseb.2024.117194openalex-snapshot

2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications

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Performance enhancement of asymmetric gate graded-AlGaN/GaN HEMT on β -Ga 2 O 3 substrate for RF applications

inferred← citeshttps://doi.org/10.1016/j.mssp.2025.109509openalex-snapshot

Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance

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TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs

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Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies

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RF linearity and improved transconductance of ScAlN/GaN HEMT with novel inverse L-shaped gate structure

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Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition

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Metal–Organic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures

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Artificial Synaptic Simulation Using Wurtzite AlScN-Based Ferroelectric Memristors

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High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy

inferred← citeshttps://doi.org/10.1039/d6ma00563bopenalex-snapshot

Role of scandium precursor decomposition in MOCVD of AlScN and predictions for AlYN

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Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

inferred← citeshttps://doi.org/10.1063/5.0143645openalex-snapshot

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

inferred← citeshttps://doi.org/10.1063/5.0159501openalex-snapshot

Voltage-margin limiting mechanisms of AlScN-based HEMTs

inferred← citeshttps://doi.org/10.1063/5.0167855openalex-snapshot

Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography

inferred← citeshttps://doi.org/10.1063/5.0176707openalex-snapshot

Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors

inferred← citeshttps://doi.org/10.1063/5.0203156openalex-snapshot

Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition

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Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities

inferred← citeshttps://doi.org/10.1063/5.0213662openalex-snapshot

Structural and optical properties of epitaxial Sc x Al1− x N coherently grown on GaN bulk substrates by sputtering method

inferred← citeshttps://doi.org/10.1063/5.0221374openalex-snapshot

Pinpointing lattice-matched conditions for wurtzite ScxAl1−xN/GaN heterostructures with x-ray reciprocal space analysis

inferred← citeshttps://doi.org/10.1063/5.0250408openalex-snapshot

Crack-free ScxAl1−xN(0001) layers grown on Si(111) by plasma-assisted molecular beam epitaxy

inferred← citeshttps://doi.org/10.1063/5.0257333openalex-snapshot

MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio

inferred← citeshttps://doi.org/10.1063/5.0261467openalex-snapshot

Electrical properties of SiNy/Al1−xScxN/GaN-based metal–insulator–semiconductor structures

inferred← citeshttps://doi.org/10.1063/5.0266966openalex-snapshot

Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier

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Beryllium-incorporated ScAlN/GaN HEMTs with low off-current and high current stress stability

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ScAlN-based HEMTs: Challenges and opportunities

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Transport properties of lattice-matched AlScN/GaN single- and multichannel heterostructures

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Performance enhancement of AlGaN/GaN-based high electron mobility transistors with sputtered AlScN gate dielectric

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Shubnikov–de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures

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Surface oxidation and oxygen incorporation in ScAlN films grown by molecular beam epitaxy

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High mobility multiple-channel AlScN/GaN heterostructures

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Investigation of Ti/Al/Ni/Au ohmic contacts for AlScN/GaN HEMTs

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High mobility quaternary AlGaScN/GaN heterostructures grown by metalorganic chemical vapor deposition

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Ammonia source molecular beam epitaxy of ScAlN/GaN HEMTs with AlN exclusion layers

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600 °C operation of MBE-enabled ScAlN/AlN/GaN FinHEMTs

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Excitation and imaging of GHz surface acoustic waves in Al1−xScxN grown on SiC by molecular-beam epitaxy

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Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT

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inferred← citeshttps://doi.org/10.1109/iedm50854.2024.10873549openalex-snapshot

Strain-Balanced AlScN/GaN HEMTs with fT/fMAX of 173/321 GHz

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Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations

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mm-Wave GaN-on-Si HEMTs with a PSAT of 3.9W/mm at 28GHz

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Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs

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Theoretical Limits of the Matching Bandwidth and Output Power of AlScN-Based HEMTs

inferred← citeshttps://doi.org/10.1109/ted.2026.3690422openalex-snapshot

Improved Electrical Performance of Thin-Barrier AlGaN/GaN HEMTs by Dual-Layer SiN Passivation

inferred← citeshttps://doi.org/10.1109/tmtt.2025.3617150openalex-snapshot

Deep-Level Effects in Back-Barrier-Scaled GaN HEMTs

inferred← citeshttps://doi.org/10.1117/12.3041308openalex-snapshot

Growth and applications of AIScN and AIYN grown by MOCVD

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Ammonia-MBE growth of ScAlN for high power/high frequency electronics

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Optimized DC and RF Characteristics of ScAlN/InGaN/GaN HEMTs on Silicon Carbide using Step-graded AlGaN Buffer Layers

inferred← citeshttps://doi.org/10.1557/s43577-025-00997-6openalex-snapshot

Growth of wurtzite ferroelectrics

inferred← citeshttps://doi.org/10.3389/femat.2025.1622176openalex-snapshot

2DEG properties of AlScN/GaN and AlYN/GaN HEMTs determined by terahertz optical Hall effect

inferred← citeshttps://doi.org/10.3389/fmats.2025.1507123openalex-snapshot

Epitaxial growth of transition metal nitrides by reactive sputtering

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inferred← citeshttps://doi.org/10.35848/1347-4065/ae5b0aopenalex-snapshot

Carrier trapping effects in the electrical characteristics of ScAlN thin films grown on n + -GaN/sapphire substrates by sputtering

inferred← citeshttps://doi.org/10.35848/1882-0786/ada86bopenalex-snapshot

AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz

inferred← citeshttps://doi.org/10.35848/1882-0786/adc5dbopenalex-snapshot

ScAlN/GaN-on-Si (111) HEMTs for RF applications

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Design, fabrication and simulation of next generation robust GaN HEMTs for millimeter wave applications

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