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ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

https://doi.org/10.1109/led.2019.2915555
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Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1063/1.369664openalex-snapshot
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
inferredcites →https://doi.org/10.1063/1.4981807openalex-snapshot
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
inferredcites →https://doi.org/10.1088/0953-8984/27/24/245901openalex-snapshot
Piezoelectric coefficients and spontaneous polarization of ScAlN
inferredcites →https://doi.org/10.1109/16.906439openalex-snapshot
Undoped AlGaN/GaN HEMTs for microwave power amplification
inferredcites →https://doi.org/10.1109/16.906455openalex-snapshot
Very-high power density AlGaN/GaN HEMTs
inferredcites →https://doi.org/10.1109/iedm.2016.7838339openalex-snapshot
W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz
inferredcites →https://doi.org/10.1109/led.2003.812532openalex-snapshot
10-W/mm AlGaN-GaN HFET with a field modulating plate
inferredcites →https://doi.org/10.1109/led.2003.822667openalex-snapshot
30-W/mm GaN HEMTs by Field Plate Optimization
inferredcites →https://doi.org/10.1109/led.2005.857701openalex-snapshot
High-power AlGaN/GaN HEMTs for Ka-band applications
inferredcites →https://doi.org/10.1109/led.2007.895417openalex-snapshot
RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHz
inferredcites →https://doi.org/10.1109/led.2009.2034875openalex-snapshot
High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier
inferredcites →https://doi.org/10.1109/led.2010.2045099openalex-snapshot
Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency
inferredcites →https://doi.org/10.1109/led.2010.2072771openalex-snapshot
Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance
inferredcites →https://doi.org/10.1109/led.2011.2111352openalex-snapshot
InAlN/GaN HEMTs With AlGaN Back Barriers
inferredcites →https://doi.org/10.1109/led.2011.2158288openalex-snapshot
220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs
inferredcites →https://doi.org/10.1109/led.2011.2164613openalex-snapshot
300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
inferredcites →https://doi.org/10.1109/led.2012.2196751openalex-snapshot
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
inferredcites →https://doi.org/10.1109/led.2015.2474265openalex-snapshot
Implementation of High-Power-Density $X$ -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process
inferredcites →https://doi.org/10.1109/led.2017.2653192openalex-snapshot
N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz
inferredcites →https://doi.org/10.1109/ted.2007.904476openalex-snapshot
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
inferredcites →https://doi.org/10.1109/ted.2013.2268160openalex-snapshot
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
inferredcites →https://doi.org/10.1109/ted.2017.2770087openalex-snapshot
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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Rf Linearity and Improved GM of Scaln/Gan Hemt with Novel Inverse L-Shaped Gate Structure
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Understanding Interfaces in AlScN/GaN Heterostructures
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Synthesis of Wafer‐Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications
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CMOS AlN and ScAlN Pyroelectric Detectors with Optical Enhancement for Detection of CO2 and CH4 Gases
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Ultra‐wide bandgap Al 0. 1 Ga 0 . 9 N double channel HEMT for RF applications
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K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm−1 Extrinsic Transconductance
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Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics
inferred← citeshttps://doi.org/10.1002/pssa.202400963openalex-snapshot
ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate
inferred← citeshttps://doi.org/10.1002/pssb.202400647openalex-snapshot
Effects of Sc Composition and Lattice Constraint on Polarization Switching of Sc x Al 1− x N Alloys: A First‐Principles Study
inferred← citeshttps://doi.org/10.1002/pssr.201900535openalex-snapshot
Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride
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Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications
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Challenges and Future Trends
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Applications of Emerging Materials: High Power Devices
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Performance Analysis of AlN/GaN HEMTs on β-Ga2O3 Through Exploration of Varied Back Barriers: An Investigative Study for Advanced RF Power Applications
inferred← citeshttps://doi.org/10.1007/s11664-024-11672-yopenalex-snapshot
Investigating the Impact of Fe-Doped GaN and β-Ga2O3 Buffer Layers on a Laterally Scaled AlN/GaN HEMT Using Silicon Carbide Substrate for Next-Generation RF Electronics
inferred← citeshttps://doi.org/10.1007/s40042-024-01222-4openalex-snapshot
Nanoscale recessed T-gated ScAlN/GaN-HEMT on SiC wafer with graded back-barrier and Fe-doped buffer for future RF power amplifiers: a simulation study
inferred← citeshttps://doi.org/10.1016/b978-0-12-822823-4.00004-2openalex-snapshot
Gallium nitride technologies for wireless communication
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High-Al-content heterostructures and devices
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Ferroelectric nitride semiconductors: Molecular beam epitaxy, properties, and emerging device applications
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On the surface oxidation and band alignment of ferroelectric Sc0.18Al0.82N/GaN heterostructures
inferred← citeshttps://doi.org/10.1016/j.device.2025.100845openalex-snapshot
High-temperature memory devices based on ferroelectric ScAlN/AlGaN/GaN high-electron-mobility transistors
inferred← citeshttps://doi.org/10.1016/j.mee.2023.111948openalex-snapshot
An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power applications
inferred← citeshttps://doi.org/10.1016/j.mejo.2024.106394openalex-snapshot
DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate
inferred← citeshttps://doi.org/10.1016/j.micrna.2023.207504openalex-snapshot
Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future RF power applications
inferred← citeshttps://doi.org/10.1016/j.micrna.2024.207815openalex-snapshot
Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications
inferred← citeshttps://doi.org/10.1016/j.micrna.2026.208674openalex-snapshot
Maximizing power efficiency in GaN HEMTs: The role of ScAlN integration through n2DEG analytical modeling and 3D simulations
inferred← citeshttps://doi.org/10.1016/j.micrna.2026.208757openalex-snapshot
Hybrid 2DEG/3D quantum confinement in graded AlScN/GaN superlattices: AlN interlayer constraints from 50-Subband Schrödinger–Poisson modeling
inferred← citeshttps://doi.org/10.1016/j.micrna.2026.208923openalex-snapshot
Enhancement of Sc0.18Al0.82N/GaN HEMTs performance by channel engineering
inferred← citeshttps://doi.org/10.1016/j.mssp.2025.109509openalex-snapshot
Recent advancement in ScAlN/GaN high electron mobility transistors: Materials, properties, and device performance
inferred← citeshttps://doi.org/10.1016/j.rinp.2021.105000openalex-snapshot
Analysis of RF performance of novel Sc-doped GaN high-electron-mobility transistors with air-bridge structure
inferred← citeshttps://doi.org/10.1016/j.rinp.2024.107797openalex-snapshot
RF linearity and improved transconductance of ScAlN/GaN HEMT with novel inverse L-shaped gate structure
inferred← citeshttps://doi.org/10.1021/acs.cgd.2c01013openalex-snapshot
Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition
inferred← citeshttps://doi.org/10.1021/acsaelm.2c00995openalex-snapshot
Spontaneous Polarization and Polarization-Induced Electron Sheet Charge of YbAlN on GaN: A First-Principles Study
inferred← citeshttps://doi.org/10.1021/acsaelm.2c01409openalex-snapshot
Scandium-Doped Aluminum Nitride for Acoustic Wave Resonators, Filters, and Ferroelectric Memory Applications
inferred← citeshttps://doi.org/10.1021/acsami.6c08343openalex-snapshot
Multimode GaN Transistors with Ultrawide Threshold Voltage Control Enabled by Passivation-Induced Stress–Strain–Polarization Coupling
inferred← citeshttps://doi.org/10.1021/acsanm.4c04549openalex-snapshot
Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires
inferred← citeshttps://doi.org/10.1039/d4tc04545aopenalex-snapshot
Self-organised ordering of scandium into basal monolayers of aluminium nitride and its implication for the growth of well-crystallized (Al,Sc)N materials for electronic devices
inferred← citeshttps://doi.org/10.1063/5.0003095openalex-snapshot
Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures
inferred← citeshttps://doi.org/10.1063/5.0013943openalex-snapshot
Structural and piezoelectric properties of ultra-thin ScxAl1−xN films grown on GaN by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/5.0027364openalex-snapshot
Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry
inferred← citeshttps://doi.org/10.1063/5.0029488openalex-snapshot
Band alignment of ScAlN/GaN heterojunction
inferred← citeshttps://doi.org/10.1063/5.0035026openalex-snapshot
Oxygen defect dominated photoluminescence emission of ScxAl1−xN grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/5.0037617openalex-snapshot
Next generation ferroelectric materials for semiconductor process integration and their applications
inferred← citeshttps://doi.org/10.1063/5.0054522openalex-snapshot
Strong effect of scandium source purity on chemical and electronic properties of epitaxial ScxAl1−xN/GaN heterostructures
inferred← citeshttps://doi.org/10.1063/5.0054539openalex-snapshot
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/5.0055851openalex-snapshot
N-polar ScAlN and HEMTs grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/5.0057412openalex-snapshot
Power electronics figure-of-merit of ScAlN
inferred← citeshttps://doi.org/10.1063/5.0060608openalex-snapshot
Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN
inferred← citeshttps://doi.org/10.1063/5.0061555openalex-snapshot
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
inferred← citeshttps://doi.org/10.1063/5.0068059openalex-snapshot
Demonstration of ferroelectricity in ScGaN thin film using sputtering method
inferred← citeshttps://doi.org/10.1063/5.0075636openalex-snapshot
Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties
inferred← citeshttps://doi.org/10.1063/5.0079359openalex-snapshot
High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure
inferred← citeshttps://doi.org/10.1063/5.0094533openalex-snapshot
Electron accumulation and distribution at interfaces of hexagonal ScxAl1−xN/GaN- and ScxAl1−xN/InN-heterostructures
inferred← citeshttps://doi.org/10.1063/5.0097117openalex-snapshot
Ferroelectric N-polar ScAlN/GaN heterostructures grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/5.0099913openalex-snapshot
Impact of dislocation density on the ferroelectric properties of ScAlN grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/5.0108475openalex-snapshot
Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions
inferred← citeshttps://doi.org/10.1063/5.0115512openalex-snapshot
Electron effective masses of ScxAl1−xN and AlxGa1−xN from first-principles calculations of unfolded band structure
inferred← citeshttps://doi.org/10.1063/5.0118075openalex-snapshot
Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy
inferred← citeshttps://doi.org/10.1063/5.0120141openalex-snapshot
Influence of alloying and structural transition on the directional elastic and isotropic thermodynamic properties of wurtzite and layered hexagonal ScxAl1−xN crystals
inferred← citeshttps://doi.org/10.1063/5.0121621openalex-snapshot
Overcoming metal-rich surface chemistry limitations of ScAlN for high electrical performance heterostructures
inferred← citeshttps://doi.org/10.1063/5.0122943openalex-snapshot
Reconfigurable self-powered deep UV photodetectors based on ultrawide bandgap ferroelectric ScAlN
inferred← citeshttps://doi.org/10.1063/5.0131766openalex-snapshot
Band alignment of sputtered and atomic layer deposited SiO2 and Al2O3 on ScAlN
inferred← citeshttps://doi.org/10.1063/5.0143645openalex-snapshot
Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT
inferred← citeshttps://doi.org/10.1063/5.0152527openalex-snapshot
Perspectives and opportunities with multisubband plasmonics
inferred← citeshttps://doi.org/10.1063/5.0152694openalex-snapshot
Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures
inferred← citeshttps://doi.org/10.1063/5.0160163openalex-snapshot
Controlled ferroelectric switching in ultrawide bandgap AlN/ScAlN multilayers
inferred← citeshttps://doi.org/10.1063/5.0176707openalex-snapshot
Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors
inferred← citeshttps://doi.org/10.1063/5.0195021openalex-snapshot
Conduction-band engineering of polar nitride semiconductors with wurtzite ScAlN for near-infrared photonic devices
inferred← citeshttps://doi.org/10.1063/5.0203156openalex-snapshot
Two-dimensional electron gases in AlYN/GaN heterostructures grown by metal–organic chemical vapor deposition
inferred← citeshttps://doi.org/10.1063/5.0206005openalex-snapshot
Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities
inferred← citeshttps://doi.org/10.1063/5.0213662openalex-snapshot
Structural and optical properties of epitaxial Sc x Al1− x N coherently grown on GaN bulk substrates by sputtering method
inferred← citeshttps://doi.org/10.1063/5.0221374openalex-snapshot
Pinpointing lattice-matched conditions for wurtzite ScxAl1−xN/GaN heterostructures with x-ray reciprocal space analysis
inferred← citeshttps://doi.org/10.1063/5.0228747openalex-snapshot
ScAlInN/GaN heterostructures grown by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/5.0234624openalex-snapshot
Boosting the two-dimensional electron gas density of Al0.20Ga0.80N/GaN heterostructures by regrowth of an epitaxial Sc0.18Al0.82N layer
inferred← citeshttps://doi.org/10.1063/5.0235294openalex-snapshot
Epitaxial high-K barrier AlBN/GaN HEMTs
inferred← citeshttps://doi.org/10.1063/5.0236507openalex-snapshot
Excellent piezoelectric and ferroelectric properties of ScxGa1−xN alloy with high Sc concentration
inferred← citeshttps://doi.org/10.1063/5.0239643openalex-snapshot
Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor
inferred← citeshttps://doi.org/10.1063/5.0250995openalex-snapshot
Sputtered ferroelectric aluminum scandium boron nitride (Al1−x−yBxScyN)/ n -GaN heterostructures
inferred← citeshttps://doi.org/10.1063/5.0257333openalex-snapshot
MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio
inferred← citeshttps://doi.org/10.1063/5.0261467openalex-snapshot
Electrical properties of SiNy/Al1−xScxN/GaN-based metal–insulator–semiconductor structures
inferred← citeshttps://doi.org/10.1063/5.0265601openalex-snapshot
UWBG ferroelectric ScAlN/AlGaN high-electron mobility transistor
inferred← citeshttps://doi.org/10.1063/5.0266966openalex-snapshot
Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier
inferred← citeshttps://doi.org/10.1063/5.0270230openalex-snapshot
Beryllium-incorporated ScAlN/GaN HEMTs with low off-current and high current stress stability
inferred← citeshttps://doi.org/10.1063/5.0272976openalex-snapshot
ScAlN-based HEMTs: Challenges and opportunities
inferred← citeshttps://doi.org/10.1063/5.0274769openalex-snapshot
High-k TiO2 dielectric thin films by atomic layer deposition on InAlN/GaN and ScAlN/GaN heterostructures
inferred← citeshttps://doi.org/10.1063/5.0280968openalex-snapshot
Temperature dependent characterization of 140–180 nm AlGaN/GaN HEMTs using DC and small-signal RF measurements
inferred← citeshttps://doi.org/10.1063/5.0281623openalex-snapshot
Transport properties of lattice-matched AlScN/GaN single- and multichannel heterostructures
inferred← citeshttps://doi.org/10.1063/5.0282582openalex-snapshot
Pulsed mode atomic layer etching of ScAlN using Cl2/C2H4/Ar
inferred← citeshttps://doi.org/10.1063/5.0283382openalex-snapshot
Molecular beam epitaxy of In-assisted ScAlN/GaN HEMT structures with ultralow sheet resistance
inferred← citeshttps://doi.org/10.1063/5.0302121openalex-snapshot
Shubnikov–de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
inferred← citeshttps://doi.org/10.1063/5.0314958openalex-snapshot
Investigation of Ti/Al/Ni/Au ohmic contacts for AlScN/GaN HEMTs
inferred← citeshttps://doi.org/10.1063/5.0315706openalex-snapshot
Microwave performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on semi-insulating GaN substrates
inferred← citeshttps://doi.org/10.1063/5.0323168openalex-snapshot
Scattering mechanism of 2DEG in ScAlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
inferred← citeshttps://doi.org/10.1063/5.0332354openalex-snapshot
600 °C operation of MBE-enabled ScAlN/AlN/GaN FinHEMTs
inferred← citeshttps://doi.org/10.1088/1361-6641/abd924openalex-snapshot
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
inferred← citeshttps://doi.org/10.1088/1361-6641/acb80eopenalex-snapshot
Dawn of nitride ferroelectric semiconductors: from materials to devices
inferred← citeshttps://doi.org/10.1109/bcicts54660.2023.10310669openalex-snapshot
Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance
inferred← citeshttps://doi.org/10.1109/bcicts54660.2023.10310921openalex-snapshot
AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality
inferred← citeshttps://doi.org/10.1109/bcicts59662.2024.10745675openalex-snapshot
Characterization of ScAlN/GaN Toward Electronic Device Application
inferred← citeshttps://doi.org/10.1109/icdcs48716.2020.243581openalex-snapshot
Performance analysis of ScAlN/GaN High Electron Mobility Transistor (HEMT) for biosensing application
inferred← citeshttps://doi.org/10.1109/iedm50854.2024.10873549openalex-snapshot
Strain-Balanced AlScN/GaN HEMTs with fT/fMAX of 173/321 GHz
inferred← citeshttps://doi.org/10.1109/ims19712.2021.9575038openalex-snapshot
A baseband-65GHz High Linearity-Bandwidth GaN LNA using a 1.7A/mm High Current Density ScAlN based GaN HEMT Technology
inferred← citeshttps://doi.org/10.1109/itherm54085.2022.9899680openalex-snapshot
Deep-Ultraviolet Thermoreflectance Thermal Imaging of GaN High Electron Mobility Transistors
inferred← citeshttps://doi.org/10.1109/jeds.2021.3103847openalex-snapshot
Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications
inferred← citeshttps://doi.org/10.1109/led.2020.3006035openalex-snapshot
RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band
inferred← citeshttps://doi.org/10.1109/led.2022.3216620openalex-snapshot
InGaZnO Ferroelectric Thin-Film Transistor Using HfO₂/Al₂O₃/AlN Hybrid Gate Dielectric Stack With Ultra-Large Memory Window
inferred← citeshttps://doi.org/10.1109/led.2022.3220877openalex-snapshot
AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz
inferred← citeshttps://doi.org/10.1109/led.2025.3599158openalex-snapshot
Enhanced Reliability of Ferroelectric GaN HEMTs With Reduced Depolarization-Field Effect
inferred← citeshttps://doi.org/10.1109/naecon61878.2024.10670677openalex-snapshot
RF Performance Evaluation of AlGaN/GaN 140 nm T-gate HEMTs at High Temperatures
inferred← citeshttps://doi.org/10.1109/ted.2020.3018697openalex-snapshot
A Reconfigurable Surface Acoustic Wave Filter on ZnO/AlGaN/GaN Heterostructure
inferred← citeshttps://doi.org/10.1109/ted.2021.3084136openalex-snapshot
Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide
inferred← citeshttps://doi.org/10.1109/ted.2023.3318564openalex-snapshot
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
inferred← citeshttps://doi.org/10.1109/ted.2023.3334224openalex-snapshot
Theoretical Limits of the Matching Bandwidth and Output Power of AlScN-Based HEMTs
inferred← citeshttps://doi.org/10.1109/ted.2026.3690160openalex-snapshot
Al$_{2}$O$_{3}$/SiN/AlN/GaN MIS-HEMTs on Silicon for mm-Wave Amplifiers, Switches, and LNAs
inferred← citeshttps://doi.org/10.1117/12.3043123openalex-snapshot
Structural characterization of scandium aluminum nitride/gallium nitride heterostructures for photonic applications
inferred← citeshttps://doi.org/10.1134/s1063782625603449openalex-snapshot
Comprehensive Study of Normally-off ScAlN Barrier GaN Transistors on Ultra-wide Bandgap β-Ga2O3: DC and RF Perspectives
inferred← citeshttps://doi.org/10.1134/s106378262560353xopenalex-snapshot
Performance Comparison of GaN-based HEMTs on β-Ga2O3 Substrates Using Compositionally-Graded InGaN and AlGaN Back Barriers for High Frequency Applications
inferred← citeshttps://doi.org/10.1134/s1063782625603632openalex-snapshot
Optimized DC and RF Characteristics of ScAlN/InGaN/GaN HEMTs on Silicon Carbide using Step-graded AlGaN Buffer Layers
inferred← citeshttps://doi.org/10.1364/ome.545820openalex-snapshot
Enhanced near-infrared absorption in lattice-matched Sc0.14Al0.86N/GaN multi-quantum wells: growth optimization and insights into polarization parameters
inferred← citeshttps://doi.org/10.1541/ieejjournal.144.327openalex-snapshot
Research and Development of Compound Semiconductor Materials and Devices for Wireless Communication
inferred← citeshttps://doi.org/10.1557/s43577-025-00997-6openalex-snapshot
Growth of wurtzite ferroelectrics
inferred← citeshttps://doi.org/10.1557/s43580-025-01192-0openalex-snapshot
Design and modeling of Scandium-alloyed wurtzite III-nitrides based ferroelectric heterostructure for power efficient applications
inferred← citeshttps://doi.org/10.17756/nwj.2023-s5-026openalex-snapshot
Performance Evaluation of Nanoscale Gate Engineered AlN/GaN Recessed T-gated HEMT with Fe-doped Buffer for Future Power Electronic Applications
inferred← citeshttps://doi.org/10.23919/eumic58042.2023.10288652openalex-snapshot
A novel reconfigurable RF switch based on ferroelectric hafnium oxide FeFET fabricated in 22 nm FDSOI technology
inferred← citeshttps://doi.org/10.3390/electronics8101164openalex-snapshot
Resonant Tunneling Diode (RTD) Terahertz Active Transmission Line Oscillator with Graphene-Plasma Wave and Two Graphene Antennas
inferred← citeshttps://doi.org/10.3390/inorganics13020029openalex-snapshot
Aluminum-Nitride-Based Semiconductors: Growth Processes, Ferroelectric Properties, and Performance Enhancements
inferred← citeshttps://doi.org/10.35848/1347-4065/ad9bb9openalex-snapshot
Theoretical study on structural stability and miscibility of ScAlN alloys: effect of lattice constraint
inferred← citeshttps://doi.org/10.35848/1347-4065/ae5b0aopenalex-snapshot
Carrier trapping effects in the electrical characteristics of ScAlN thin films grown on n + -GaN/sapphire substrates by sputtering
inferred← citeshttps://doi.org/10.35848/1882-0786/ad120bopenalex-snapshot
Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering
inferred← citeshttps://doi.org/10.35848/1882-0786/ada86bopenalex-snapshot
AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz
inferred← citeshttps://doi.org/10.35848/1882-0786/adc5dbopenalex-snapshot
ScAlN/GaN-on-Si (111) HEMTs for RF applications
inferred← citeshttps://doi.org/10.7498/aps.75.20251631openalex-snapshot
A review of the research and development of high-frequency, high-power gallium nitride radio-frequency electronic devices
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