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Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors

https://doi.org/10.1109/ted.2021.3140016

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1063/1.4981807openalex-snapshot

Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

inferredcites →https://doi.org/10.1109/drc.2012.6256939openalex-snapshot

N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax

inferredcites →https://doi.org/10.1109/drc.2013.6633861openalex-snapshot

N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax

inferredcites →https://doi.org/10.1109/iedm.2011.6131584openalex-snapshot

W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE

inferredcites →https://doi.org/10.1109/imws-amp.2018.8457157openalex-snapshot

Scandium Aluminum Nitride as an Emerging Material for High Power Transistors

inferredcites →https://doi.org/10.1109/jproc.2007.911060openalex-snapshot

GaN-Based RF Power Devices and Amplifiers

inferredcites →https://doi.org/10.1109/led.2003.821673openalex-snapshot

High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation

inferredcites →https://doi.org/10.1109/led.2005.848107openalex-snapshot

Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

inferredcites →https://doi.org/10.1109/led.2008.923318openalex-snapshot

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

inferredcites →https://doi.org/10.1109/led.2009.2020305openalex-snapshot

$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT

inferredcites →https://doi.org/10.1109/led.2009.2038935openalex-snapshot

AlGaN/GaN HEMT With 300-GHz $f_{\max}$

inferredcites →https://doi.org/10.1109/led.2010.2050052openalex-snapshot

N-Polar InAlN/AlN/GaN MIS-HEMTs

inferredcites →https://doi.org/10.1109/led.2010.2072771openalex-snapshot

Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

inferredcites →https://doi.org/10.1109/led.2011.2147753openalex-snapshot

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

inferredcites →https://doi.org/10.1109/led.2012.2190965openalex-snapshot

Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

inferredcites →https://doi.org/10.1109/led.2012.2191134openalex-snapshot

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

inferredcites →https://doi.org/10.1109/led.2015.2421311openalex-snapshot

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz

inferredcites →https://doi.org/10.1109/led.2015.2502253openalex-snapshot

N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage

inferredcites →https://doi.org/10.1109/led.2020.2967034openalex-snapshot

W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

inferredcites →https://doi.org/10.1109/led.2020.3006035openalex-snapshot

RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

inferredcites →https://doi.org/10.1109/mwsym.2010.5517592openalex-snapshot

GaN technology for microwave and millimeter wave applications

inferredcites →https://doi.org/10.1109/mwsym.2019.8701055openalex-snapshot

High Power Density ScAlN-Based Heterostructure FETs for mm-Wave Applications

inferredcites →https://doi.org/10.1109/ted.2012.2211599openalex-snapshot

Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors

inferredcites →https://doi.org/10.1109/ted.2017.2770087openalex-snapshot

Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs

inferredcites →https://doi.org/10.1201/9781003364948-18openalex-snapshot

COMSOL Multiphysics

inferredcites →https://doi.org/10.7567/jjap.53.100211openalex-snapshot

Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4771817openalex-extracted

Rf Linearity and Improved GM of Scaln/Gan Hemt with Novel Inverse L-Shaped Gate Structure

inferred← citeshttps://doi.org/10.1002/adfm.202403027openalex-snapshot

Understanding Interfaces in AlScN/GaN Heterostructures

inferred← citeshttps://doi.org/10.1002/admi.202500726openalex-snapshot

AlScN/GaN Multichannel Heterostructures Grown by Metal–Organic Chemical Vapor Deposition

inferred← citeshttps://doi.org/10.1002/apxr.202500035openalex-snapshot

Advancing the Growth of GaN on AlScN and AlYN by Metal–Organic Chemical Vapor Deposition

inferred← citeshttps://doi.org/10.1002/pssa.202400896openalex-snapshot

Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics

inferred← citeshttps://doi.org/10.1002/pssr.202200387openalex-snapshot

Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition

inferred← citeshttps://doi.org/10.1007/978-3-031-63238-9_7openalex-snapshot

Challenges and Future Trends

inferred← citeshttps://doi.org/10.1007/s11432-025-4494-2openalex-snapshot

High power density X-band source-connected field plate-free AlGaN/GaN HEMT with recessed gate oxidation process

inferred← citeshttps://doi.org/10.1007/s11664-024-11673-xopenalex-snapshot

Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy

inferred← citeshttps://doi.org/10.1007/s40042-024-01222-4openalex-snapshot

Nanoscale recessed T-gated ScAlN/GaN-HEMT on SiC wafer with graded back-barrier and Fe-doped buffer for future RF power amplifiers: a simulation study

inferred← citeshttps://doi.org/10.1016/bs.semsem.2023.09.015openalex-snapshot

Epitaxial ScAlN: Transistors through high ScN fraction thin films

inferred← citeshttps://doi.org/10.1016/j.apsusc.2023.157893openalex-snapshot

Band alignment and charge carrier transport properties of YAlN/III-nitride heterostructures

inferred← citeshttps://doi.org/10.1016/j.jallcom.2026.188448openalex-snapshot

High-Al-composition AlGaN-barrier GaN HEMT for high-power Ka-band operation

inferred← citeshttps://doi.org/10.1016/j.micrna.2022.207431openalex-snapshot

Investigation of back barrier material effects on the scalability of Fe-doped recess-gated AlN/GaN HEMTs for next generation RF power electronics

inferred← citeshttps://doi.org/10.1016/j.micrna.2026.208674openalex-snapshot

Maximizing power efficiency in GaN HEMTs: The role of ScAlN integration through n2DEG analytical modeling and 3D simulations

inferred← citeshttps://doi.org/10.1016/j.prime.2023.100177openalex-snapshot

Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies

inferred← citeshttps://doi.org/10.1016/j.rinp.2024.107797openalex-snapshot

RF linearity and improved transconductance of ScAlN/GaN HEMT with novel inverse L-shaped gate structure

inferred← citeshttps://doi.org/10.1021/acs.cgd.2c01013openalex-snapshot

Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition

inferred← citeshttps://doi.org/10.1039/d6ma00563bopenalex-snapshot

Role of scandium precursor decomposition in MOCVD of AlScN and predictions for AlYN

inferred← citeshttps://doi.org/10.1063/5.0108475openalex-snapshot

Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions

inferred← citeshttps://doi.org/10.1063/5.0121621openalex-snapshot

Overcoming metal-rich surface chemistry limitations of ScAlN for high electrical performance heterostructures

inferred← citeshttps://doi.org/10.1063/5.0152694openalex-snapshot

Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures

inferred← citeshttps://doi.org/10.1063/5.0159501openalex-snapshot

Voltage-margin limiting mechanisms of AlScN-based HEMTs

inferred← citeshttps://doi.org/10.1063/5.0164430openalex-snapshot

Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1063/5.0176344openalex-snapshot

Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions

inferred← citeshttps://doi.org/10.1063/5.0190885openalex-snapshot

Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures

inferred← citeshttps://doi.org/10.1063/5.0234624openalex-snapshot

Boosting the two-dimensional electron gas density of Al0.20Ga0.80N/GaN heterostructures by regrowth of an epitaxial Sc0.18Al0.82N layer

inferred← citeshttps://doi.org/10.1063/5.0266966openalex-snapshot

Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier

inferred← citeshttps://doi.org/10.1063/5.0272976openalex-snapshot

ScAlN-based HEMTs: Challenges and opportunities

inferred← citeshttps://doi.org/10.1063/5.0274769openalex-snapshot

High-k TiO2 dielectric thin films by atomic layer deposition on InAlN/GaN and ScAlN/GaN heterostructures

inferred← citeshttps://doi.org/10.1063/5.0281623openalex-snapshot

Transport properties of lattice-matched AlScN/GaN single- and multichannel heterostructures

inferred← citeshttps://doi.org/10.1063/5.0283382openalex-snapshot

Molecular beam epitaxy of In-assisted ScAlN/GaN HEMT structures with ultralow sheet resistance

inferred← citeshttps://doi.org/10.1063/5.0302121openalex-snapshot

Shubnikov–de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures

inferred← citeshttps://doi.org/10.1063/5.0303670openalex-snapshot

Surface oxidation and oxygen incorporation in ScAlN films grown by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1063/5.0312252openalex-snapshot

High mobility multiple-channel AlScN/GaN heterostructures

inferred← citeshttps://doi.org/10.1063/5.0315491openalex-snapshot

High mobility quaternary AlGaScN/GaN heterostructures grown by metalorganic chemical vapor deposition

inferred← citeshttps://doi.org/10.1063/5.0323168openalex-snapshot

Scattering mechanism of 2DEG in ScAlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

inferred← citeshttps://doi.org/10.1063/5.0339391openalex-snapshot

Sc-induced band-edge reconstruction in quaternary ScAlGaN

inferred← citeshttps://doi.org/10.1080/21663831.2023.2279667openalex-snapshot

Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1088/1361-6641/ad4d5aopenalex-snapshot

Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT

inferred← citeshttps://doi.org/10.1088/1674-4926/25060031openalex-snapshot

AlScN: characteristics, micro/nano fabrication and multiple applications

inferred← citeshttps://doi.org/10.1109/led.2022.3220877openalex-snapshot

AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

inferred← citeshttps://doi.org/10.1109/led.2025.3640638openalex-snapshot

AlGaN/GaN/AlGaN/GaN Double Channel Fin-HEMTs With P SAT of 14.6 W/mm and Peak PAE of 45.5% for Ka-Band Applications

inferred← citeshttps://doi.org/10.1109/mmm.2024.3428188openalex-snapshot

Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications

inferred← citeshttps://doi.org/10.1109/ted.2023.3334224openalex-snapshot

Theoretical Limits of the Matching Bandwidth and Output Power of AlScN-Based HEMTs

inferred← citeshttps://doi.org/10.1109/ted.2026.3677222openalex-snapshot

Non-Arrhenius Trapping Effects in GaN HEMTs

inferred← citeshttps://doi.org/10.1109/ted.2026.3690422openalex-snapshot

Improved Electrical Performance of Thin-Barrier AlGaN/GaN HEMTs by Dual-Layer SiN Passivation

inferred← citeshttps://doi.org/10.3390/electronics14102076openalex-snapshot

Weak-Light-Enhanced AlGaN/GaN UV Phototransistors with a Buried p-GaN Structure

inferred← citeshttps://doi.org/10.35848/1882-0786/ad0501openalex-snapshot

RF operation of AlN/Al0.25Ga0.75N/AlN HEMTs with f T /f max of 67/166 GHz

inferred← citeshttps://doi.org/10.35848/1882-0786/ad120bopenalex-snapshot

Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering

inferred← citeshttps://doi.org/10.35848/1882-0786/ada86bopenalex-snapshot

AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz

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