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PCM-FTL: A Write-Activity-Aware NAND Flash Memory Management Scheme for PCM-Based Embedded Systems
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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An endurance-enhanced Flash Translation Layer via reuse for NAND flash memory storage systems
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A Two-Level Caching Mechanism for Demand-Based Page-Level Address Mapping in NAND Flash Memory Storage Systems
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High-Performance Scalable Flash File System Using Virtual Metadata Storage with Phase-Change RAM
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A Space Reuse Strategy for Flash Translation Layers in SLC NAND Flash Memory Storage Systems
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An adaptive two-level management for the flash translation layer in embedded systems
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Endurance enhancement of flash-memory storage systems
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A PRAM and NAND flash hybrid architecture for high-performance embedded storage subsystems
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A durable and energy efficient main memory using phase change memory technology
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Scalable high performance main memory system using phase-change memory technology
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Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling
inferredcites →https://doi.org/10.1145/1837274.1837363openalex-snapshot
Reducing write activities on non-volatile memories in embedded CMPs via data migration and recomputation
inferredcites →https://doi.org/10.1145/1878961.1878991openalex-snapshot
Demand-based block-level address mapping in large-scale NAND flash storage systems
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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