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Comparison of Properties of an Al[sub 2]O[sub 3] Thin Layers Grown with Remote O[sub 2] Plasma, H[sub 2]O, or O[sub 3] as Oxidants in an ALD Process for HfO[sub 2] Gate Dielectrics
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1063/1.125779openalex-snapshot
Structure and stability of ultrathin zirconium oxide layers on Si(001)
inferredcites →https://doi.org/10.1063/1.1320464openalex-snapshot
Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics
inferredcites →https://doi.org/10.1063/1.1367902openalex-snapshot
Robustness of ultrathin aluminum oxide dielectrics on Si(001)
inferredcites →https://doi.org/10.1063/1.1519733openalex-snapshot
Thermal stability of (HfO2)x(Al2O3)1−x on Si
inferredcites →https://doi.org/10.1063/1.1520333openalex-snapshot
Thermal stability of atomic-layer-deposited HfO2 thin films on the SiNx-passivated Si substrate
inferredcites →https://doi.org/10.1063/1.1526914openalex-snapshot
Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO3 gate dielectrics
inferredcites →https://doi.org/10.1063/1.1553998openalex-snapshot
Physicochemical properties of HfO2 in response to rapid thermal anneal
inferredcites →https://doi.org/10.1063/1.1590414openalex-snapshot
Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates
inferredcites →https://doi.org/10.1063/1.1590418openalex-snapshot
Effects of plasma nitridation of Al2O3 interlayer on thermal stability, fixed charge density, and interfacial trap states of HfO2 gate dielectric films grown by atomic layer deposition
inferredcites →https://doi.org/10.1063/1.1599980openalex-snapshot
Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant
inferredcites →https://doi.org/10.1116/1.1379316openalex-snapshot
Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Amidoxime-Containing Zr and Hf Precursors for Thin Film Deposition
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Atomic Layer Deposition Process of Hf‐Based High‐k Gate Dielectric Film on Si Substrate
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Strategic Selection of the Oxygen Source for Low Temperature‐Atomic Layer Deposition of Al2O3 Thin Film
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Oxygen Plasma‐Treated Dielectric‐Channel Interface for BEOL‐Compatible IGZO TFTs with High Electrical Stability
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Device Feasibility of Ferroelectric Field‐Effect Transistors Using Al‐Doped HfO2 Gate Insulator Deposited with H2O Oxygen Precursor during Atomic Layer Deposition Process
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Microwave plasma-assisted ALD of Al2O3 thin films: a study on the substrate temperature dependence of various parameters of interest
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Molecular oxidation of surface –CH3 during atomic layer deposition of Al2O3 with H2O, H2O2, and O3: A theoretical study
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Mechanisms of surface reactions in thin solid film chemical deposition processes
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Effect of RF power of post-deposition oxygen treatment on HfO 2 gate dielectrics
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Electrical properties of atomic layer deposited Al2O3 with anneal temperature for surface passivation
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Multi-wavelength fiber laser via evanescent field confinement with Al2O3 nanolaminate-coated thinned fiber
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Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films
inferred← citeshttps://doi.org/10.1021/acs.jpcc.0c04872openalex-snapshot
Mechanistic Investigation on Thermal Atomic Layer Deposition of Group 13 Oxides
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First-Principles Investigation of Morphological Evolution of Tungsten Growth on Alumina Surfaces: Implications for Thin-Film Growth
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Electrochemical Construction of Low-Crystalline CoOOH Nanosheets with Short-Range Ordered Grains to Improve Oxygen Evolution Activity
inferred← citeshttps://doi.org/10.1021/cm703667hopenalex-snapshot
Detection of a Formate Surface Intermediate in the Atomic Layer Deposition of High-κ Dielectrics Using Ozone
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Multiscale Modeling of the Atomic Layer Deposition of HfO2 Thin Film Grown on Silicon: How to Deal with a Kinetic Monte Carlo Procedure
inferred← citeshttps://doi.org/10.1021/jp101423fopenalex-snapshot
Unusual Growth Behavior of Atomic Layer Deposited PbTiO3 Thin Films Using Water and Ozone As Oxygen Sources and Their Combination
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Nucleation and growth of atomic layer deposition of HfO2 gate dielectric layers on silicon oxide: a multiscale modelling investigation
inferred← citeshttps://doi.org/10.1039/c3tc32561jopenalex-snapshot
Effects of O 3 and H 2 O as oxygen sources on the atomic layer deposition of HfO 2 gate dielectrics at different deposition temperatures
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Thermodynamic insights into interfacial interactions in TiN/amorphous Al 2 O 3 heterostructures: ab initio molecular dynamics and first principles investigation
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Silicon surface passivation by atomic layer deposited Al2O3
inferred← citeshttps://doi.org/10.1063/1.3021091openalex-snapshot
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
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Impact of ultrathin Al2O3 barrier layer on electrical properties of LaLuO3 metal-oxide-semiconductor devices
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Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
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Influence of Al precursor and oxidant on the performance of ALD-Al2O3 ultrathin films embedded in SiO2 for modulation acceptor doping of silicon
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Post-annealing effect of low temperature atomic layer deposited Al 2 O 3 on the top gate IGZO TFT
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Characterization of High-Performance InGaAs QW-MOSFETs With Reliable Bi-Layer HfOxNy Gate Stack
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Thermal and plasma-enhanced atomic layer deposition of hafnium oxide on semiconductor substrates
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Comprehensive comparison of structural, electrical, and reliability characteristics of HfO2 gate dielectric with H2O or O3 oxidant
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Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25 °C≤ T ≤ 200 °C
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Atomic layer deposited high-κ nanolaminates for silicon surface passivation
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Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
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HfO[sub 2] Films Grown by ALD Using Cyclopentadienyl-Type Precursors and H[sub 2]O or O[sub 3] as Oxygen Source
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Plasma and Thermal ALD of Al[sub 2]O[sub 3] in a Commercial 200 mm ALD Reactor
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Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO2Film
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Area Dependence of Reliability Characteristics for Atomic Layer Deposition HfO2Film under Static and Dynamic Stress
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Atomic layer deposition of HfO2, Al2O3, and HfAlOx using O3 and metal(diethylamino) precursors
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