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Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1016/0022-0248(92)90346-kopenalex-snapshot
Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy
inferredcites →https://doi.org/10.1016/j.apsusc.2015.10.153openalex-snapshot
MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor
inferredcites →https://doi.org/10.1016/j.jcrysgro.2005.10.094openalex-snapshot
Designing novel organogermanium OMVPE precursors for high-purity germanium films
inferredcites →https://doi.org/10.1016/j.jcrysgro.2012.10.055openalex-snapshot
Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxy
inferredcites →https://doi.org/10.1016/j.sse.2011.01.032openalex-snapshot
Low threading dislocation density Ge deposited on Si (100) using RPCVD
inferredcites →https://doi.org/10.1016/j.tsf.2011.02.019openalex-snapshot
p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor
inferredcites →https://doi.org/10.1063/1.100032openalex-snapshot
Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained-layer superlattices
inferredcites →https://doi.org/10.1063/1.125187openalex-snapshot
High-quality Ge epilayers on Si with low threading-dislocation densities
inferredcites →https://doi.org/10.1063/1.126754openalex-snapshot
High quality Ge on Si by epitaxial necking
inferredcites →https://doi.org/10.1063/1.1699524openalex-snapshot
Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection
inferredcites →https://doi.org/10.1063/1.2756165openalex-snapshot
Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping
inferredcites →https://doi.org/10.1063/1.3292591openalex-snapshot
Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band
inferredcites →https://doi.org/10.1063/1.346156openalex-snapshot
Thermal annealing effects of defect reduction in GaAs on Si substrates
inferredcites →https://doi.org/10.1063/1.4863223openalex-snapshot
High performance continuous wave 1.3 μ m quantum dot lasers on silicon
inferredcites →https://doi.org/10.1063/1.4935943openalex-snapshot
Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates
inferredcites →https://doi.org/10.1063/1.95663openalex-snapshot
Defect reduction in GaAs epitaxial layers using a GaAsP-InGaAs strained-layer superlattice
inferredcites →https://doi.org/10.1063/1.97631openalex-snapshot
Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures
inferredcites →https://doi.org/10.1109/55.61775openalex-snapshot
High-efficiency (>20% AM0) GaAs solar cells grown on inactive-Ge substrates
inferredcites →https://doi.org/10.1109/55.708openalex-snapshot
High-efficiency GaAs/Ge monolithic tandem solar cells
inferredcites →https://doi.org/10.1109/jstqe.2008.2011564openalex-snapshot
High-Temperature Operation of 1.26-$\mu$m Ridge Waveguide Laser With InGaAs Metamorphic Buffer on GaAs Substrate
inferredcites →https://doi.org/10.1109/jstqe.2013.2238509openalex-snapshot
50-Gb/s Direct Modulation of a 1.3-μm InGaAlAs-Based DFB Laser With a Ridge Waveguide Structure
inferredcites →https://doi.org/10.1109/jstqe.2013.2247978openalex-snapshot
1.3-μm Range Metamorphic InGaAs Laser With High Characteristic Temperature for Low Power Consumption Operation
inferredcites →https://doi.org/10.1109/jstqe.2015.2418226openalex-snapshot
Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon
inferredcites →https://doi.org/10.1109/jstqe.2015.2420595openalex-snapshot
1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement
inferredcites →https://doi.org/10.1109/lpt.2014.2384520openalex-snapshot
Direct Modulation at 56 and 50 Gb/s of 1.3- $\mu $ m InGaAlAs Ridge-Shaped-BH DFB Lasers
inferredcites →https://doi.org/10.1143/jjap.26.l1950openalex-snapshot
Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
inferredcites →https://doi.org/10.1143/jjap.26.l944openalex-snapshot
Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy
inferredcites →https://doi.org/10.1143/jjap.32.4912openalex-snapshot
Characterization of Antiphase Domain in GaP on Misoriented (001) Si Substrate Grown by Metalorganic Chemical Vapor Deposition
inferredcites →https://doi.org/10.1149/1.2818556openalex-snapshot
Ge on Si Photodiodes for Si CMOS Monolithic Optical Receivers
inferredcites →https://doi.org/10.1149/1.3077178openalex-snapshot
Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth
inferredcites →https://doi.org/10.1149/1.3096551openalex-snapshot
Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping
inferredcites →https://doi.org/10.1149/1.3129463openalex-snapshot
Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping
inferredcites →https://doi.org/10.1364/prj.3.0000b1openalex-snapshot
Quantum dot lasers for silicon photonics [Invited]
inferredcites →https://doi.org/10.3390/s110100696openalex-snapshot
Ge-Photodetectors for Si-Based Optoelectronic Integration
inferredcites →https://doi.org/10.7567/jjap.53.04eh05openalex-snapshot
Metal organic chemical vapor deposition growth of high density InAs/Sb:GaAs quantum dots on Ge/Si substrate and its electroluminescence at room temperature
inferredcites →https://doi.org/10.7567/jjap.53.110301openalex-snapshot
Ge homoepitaxial growth by metal–organic chemical vapor deposition usingt-C4H9GeH3
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4681335openalex-extracted
Tuning Performance: Strain Modulation of Gaas Layers Grown on Meso-Porous Silicon Substrates
inferred← citeshttps://doi.org/10.2184/lsj.52.5_253openalex-snapshot
High Temperature Operation of Metamorphic InGaAs Quantum Well Laser on GaAs Substrate
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