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High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/advs.201700955openalex-snapshot
Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
inferredcites →https://doi.org/10.1016/j.crhy.2011.04.009openalex-snapshot
Science and technology challenges in XXIst century optical communications
inferredcites →https://doi.org/10.1016/j.jcrysgro.2012.12.014openalex-snapshot
Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
inferredcites →https://doi.org/10.1021/acsphotonics.7b00486openalex-snapshot
High Speed Surface Illuminated Si Photodiode Using Microstructured Holes for Absorption Enhancements at 900–1000 nm Wavelength
inferredcites →https://doi.org/10.1021/acsphotonics.8b01116openalex-snapshot
GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers
inferredcites →https://doi.org/10.1021/nl402815vopenalex-snapshot
Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics
inferredcites →https://doi.org/10.1038/nature04204openalex-snapshot
Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
inferredcites →https://doi.org/10.1038/nphoton.2013.94openalex-snapshot
Space-division multiplexing in optical fibres
inferredcites →https://doi.org/10.1038/nphoton.2015.81openalex-snapshot
High-speed detection at two micrometres with monolithic silicon photodiodes
inferredcites →https://doi.org/10.1038/nphoton.2016.21openalex-snapshot
Electrically pumped continuous-wave III–V quantum dot lasers on silicon
inferredcites →https://doi.org/10.1038/nphoton.2017.37openalex-snapshot
Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes
inferredcites →https://doi.org/10.1049/el:20020824openalex-snapshot
Ultra-low-loss (0.1484 dB/km) pure silica core fibre and extension of transmission distance
inferredcites →https://doi.org/10.1063/1.2945629openalex-snapshot
Growth of highly strain-relaxed Ge1−xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
inferredcites →https://doi.org/10.1063/1.3238327openalex-snapshot
Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications
inferredcites →https://doi.org/10.1063/1.3555439openalex-snapshot
Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
inferredcites →https://doi.org/10.1063/1.3692750openalex-snapshot
The electronic and optical properties of Eu/Si-codoped anatase TiO2 photocatalyst
inferredcites →https://doi.org/10.1063/1.4757124openalex-snapshot
GeSn p-i-n detectors integrated on Si with up to 4% Sn
inferredcites →https://doi.org/10.1063/1.4757414openalex-snapshot
The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications
inferredcites →https://doi.org/10.1063/1.4767381openalex-snapshot
Electronic band structure and effective mass parameters of Ge1-xSnx alloys
inferredcites →https://doi.org/10.1063/1.4840135openalex-snapshot
GeSn-based p-i-n photodiodes with strained active layer on a Si wafer
inferredcites →https://doi.org/10.1063/1.4862226openalex-snapshot
Wave-function engineering and absorption spectra in Si0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84 strained on relaxed Si0.10Ge0.90 type I quantum well
inferredcites →https://doi.org/10.1063/1.4903881openalex-snapshot
GeSn p-i-n waveguide photodetectors on silicon substrates
inferredcites →https://doi.org/10.1063/1.4947116openalex-snapshot
In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector
inferredcites →https://doi.org/10.1063/1.4977878openalex-snapshot
Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors
inferredcites →https://doi.org/10.1063/1.96206openalex-snapshot
Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures
inferredcites →https://doi.org/10.1103/physrevb.39.1871openalex-snapshot
Band lineups and deformation potentials in the model-solid theory
inferredcites →https://doi.org/10.1103/physrevb.48.8629openalex-snapshot
Electronic structure of α-Sn and its dependence on hydrostatic strain
inferredcites →https://doi.org/10.1103/physrevb.73.245206openalex-snapshot
Ab initioall-electron calculation of absolute volume deformation potentials of IV-IV, III-V, and II-VI semiconductors: The chemical trends
inferredcites →https://doi.org/10.1109/jphot.2009.2025516openalex-snapshot
Germanium on Silicon for Near-Infrared Light Sensing
inferredcites →https://doi.org/10.1109/jphot.2016.2607687openalex-snapshot
Silicon Based GeSn p-i-n Photodetector for SWIR Detection
inferredcites →https://doi.org/10.1109/jqe.2006.890401openalex-snapshot
Theory of Optical Gain of ${\hbox {Ge--}}{\hbox {Si}}_{x}{\hbox {Ge}}_{y}{\hbox {Sn}}_{1-x-y}$ Quantum-Well Lasers
inferredcites →https://doi.org/10.1149/1.3487607openalex-snapshot
Near IR Photodiodes with Tunable Absorption Edge Based on Ge1-y Sny Alloys Integrated on Silicon
inferredcites →https://doi.org/10.1364/oe.19.006400openalex-snapshot
GeSn p-i-n photodetector for all telecommunication bands detection
inferredcites →https://doi.org/10.1364/oe.22.000839openalex-snapshot
GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz
inferredcites →https://doi.org/10.1364/oe.23.018611openalex-snapshot
Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique
inferredcites →https://doi.org/10.1364/oe.23.025048openalex-snapshot
Growth and characterization of SiGeSn quantum well photodiodes
inferredcites →https://doi.org/10.1364/oe.24.004519openalex-snapshot
Systematic study of Si-based GeSn photodiodes with 26 µm detector cutoff for short-wave infrared detection
inferredcites →https://doi.org/10.1364/oe.24.008480openalex-snapshot
III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors
inferredcites →https://doi.org/10.1364/oe.25.015818openalex-snapshot
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth
inferredcites →https://doi.org/10.1364/oe.25.018502openalex-snapshot
Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range
inferredcites →https://doi.org/10.1364/oe.25.027715openalex-snapshot
Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates
inferredcites →https://doi.org/10.1364/ol.39.004711openalex-snapshot
GeSn/Ge multiquantum well photodetectors on Si substrates
inferredcites →https://doi.org/10.1364/ol.42.001652openalex-snapshot
Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer
inferredcites →https://doi.org/10.1364/ol.43.001215openalex-snapshot
GeSn resonant-cavity-enhanced photodetectors on silicon-on-insulator platforms
inferredcites →https://doi.org/10.1364/opex.13.000236openalex-snapshot
Ultimate low loss of hollow-core photonic crystal fibres
inferredcites →https://doi.org/10.1364/optica.4.000940openalex-snapshot
13 μm submilliamp threshold quantum dot micro-lasers on Si
inferredcites →https://doi.org/10.1364/optica.5.001055openalex-snapshot
High-speed silicon modulators for the 2 μm wavelength band
inferredcites →https://doi.org/10.1364/prj.6.000734openalex-snapshot
Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4653522openalex-extracted
Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection
inferred← citeshttps://doi.org/10.1002/adfm.202006329openalex-snapshot
All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors
inferred← citeshttps://doi.org/10.1002/adma.202201192openalex-snapshot
A Light‐Hole Germanium Quantum Well on Silicon
inferred← citeshttps://doi.org/10.1002/adom.202503732openalex-snapshot
Robust Hot‐Carrier‐Based Gallium Arsenide Photodetectors for 2 µm Optical Window
inferred← citeshttps://doi.org/10.1002/adpr.202400155openalex-snapshot
High‐Detectivity GeSn Mid‐Infrared Photodetectors for Sensitive Infrared Spectroscopy
inferred← citeshttps://doi.org/10.1002/lpor.202200117openalex-snapshot
High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect
inferred← citeshttps://doi.org/10.1002/lpor.71713openalex-snapshot
Plasmonic‐Based Negative Photoconductance Photodetectors for a New Optical Window
inferred← citeshttps://doi.org/10.1007/s00339-021-05243-9openalex-snapshot
Multilevel resistive switching in graphene oxide-multiferroic thin-film-based bilayer RRAM device by interfacial oxygen vacancy engineering
inferred← citeshttps://doi.org/10.1007/s00339-023-06483-7openalex-snapshot
Progress in group-IV semiconductor nanowires based photonic devices
inferred← citeshttps://doi.org/10.1007/s10854-026-17040-2openalex-snapshot
Evolution and outlook of GeSn infrared photodetectors: structural engineering perspectives—a review
inferred← citeshttps://doi.org/10.1016/b978-0-443-24804-7.00003-9openalex-snapshot
Multiquantum well photodetectors: photon trapping surface features to enable performance enhancement and computational imaging
inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.159673openalex-snapshot
Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection
inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.159852openalex-snapshot
Excitation of hybrid modes in plasmonic nanoantennas coupled with GeSiSn/Si multiple quantum wells for the photoresponse enhancement in the short-wave infrared range
inferred← citeshttps://doi.org/10.1016/j.apsusc.2025.163122openalex-snapshot
Magnetron sputtering growth and growth mechanism of GeSn films with Sn content exceeding 25% on InP substrates
inferred← citeshttps://doi.org/10.1016/j.apsusc.2026.168020openalex-snapshot
PtSe2/GeSn/InP 2D-3D heterojunction based on MBE-grown high-Sn-content GeSn film for high-responsivity broadband infrared detection via negative photoconductivity effect
inferred← citeshttps://doi.org/10.1016/j.jallcom.2021.159696openalex-snapshot
Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm
inferred← citeshttps://doi.org/10.1016/j.jallcom.2022.167954openalex-snapshot
Growth and characterization of GePb/Ge multiple quantum wells
inferred← citeshttps://doi.org/10.1016/j.jlumin.2020.117539openalex-snapshot
Room-temperature direct-bandgap electroluminescence from type-I GeSn/SiGeSn multiple quantum wells for 2 μm LEDs
inferred← citeshttps://doi.org/10.1016/j.matpr.2020.05.133openalex-snapshot
Nanostructured material engineering for ultra-low loss MWIR thermal sensors – A short review
inferred← citeshttps://doi.org/10.1016/j.mtphys.2023.101052openalex-snapshot
Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells
inferred← citeshttps://doi.org/10.1016/j.optlastec.2023.109375openalex-snapshot
Influence of photonic crystals on the performance parameters of GeSn vertical-structure photodiodes
inferred← citeshttps://doi.org/10.1021/acs.nanolett.1c00934openalex-snapshot
Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width
inferred← citeshttps://doi.org/10.1021/acs.nanolett.4c00759openalex-snapshot
Mid-infrared Imaging Using Strain-Relaxed Ge 1– x Sn x Alloys Grown on 20 nm Ge Nanowires
inferred← citeshttps://doi.org/10.1021/acsami.5c25952openalex-snapshot
Monolithic PbSe/Ge/Si Heteroepitaxial Architecture for Uncooled Dual-Band Infrared Detection
inferred← citeshttps://doi.org/10.1021/acsnano.2c12625openalex-snapshot
A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array Metasurface
inferred← citeshttps://doi.org/10.1021/acsnano.3c04619openalex-snapshot
High-Speed Carbon Nanotube Photodetectors for 2 μm Communications
inferred← citeshttps://doi.org/10.1021/acsnano.6c03202openalex-snapshot
SiN x Waveguide-Integrated Carbon Nanotube Photodetector with Bandwidth over 67 GHz Operating at 1.55 and 2 μm Band
inferred← citeshttps://doi.org/10.1021/acsnano.9b09715openalex-snapshot
Low Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes
inferred← citeshttps://doi.org/10.1021/acsphotonics.2c00260openalex-snapshot
High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response
inferred← citeshttps://doi.org/10.1021/acsphotonics.2c01934openalex-snapshot
GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform
inferred← citeshttps://doi.org/10.1038/s41377-020-0263-6openalex-snapshot
High-performance silicon−graphene hybrid plasmonic waveguide photodetectors beyond 1.55 μm
inferred← citeshttps://doi.org/10.1039/d0na00680gopenalex-snapshot
Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy
inferred← citeshttps://doi.org/10.1039/d0tc03016copenalex-snapshot
Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending
inferred← citeshttps://doi.org/10.1039/d3nr05904aopenalex-snapshot
GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation
inferred← citeshttps://doi.org/10.1039/d3tc01018jopenalex-snapshot
Lattice matched GeSn/InAlAs heterostructure: role of Sn in energy band alignment, atomic layer diffusion and photoluminescence
inferred← citeshttps://doi.org/10.1063/5.0005112openalex-snapshot
Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density
inferred← citeshttps://doi.org/10.1063/5.0006711openalex-snapshot
Planar GeSn photodiode for high-detectivity photodetection at 1550 nm
inferred← citeshttps://doi.org/10.1063/5.0024798openalex-snapshot
Amplifying photocurrent of graphene on GeSn film by sandwiching a thin oxide between them
inferred← citeshttps://doi.org/10.1063/5.0043511openalex-snapshot
Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors
inferred← citeshttps://doi.org/10.1063/5.0045485openalex-snapshot
Telecom InP-based quantum dash photodetectors grown on Si
inferred← citeshttps://doi.org/10.1063/5.0077331openalex-snapshot
Recrystallization and interdiffusion processes in laser-annealed strain-relaxed metastable Ge0.89Sn0.11
inferred← citeshttps://doi.org/10.1063/5.0084940openalex-snapshot
Sn composition graded GeSn photodetectors on Si substrate with cutoff wavelength of 3.3 μm for mid-infrared Si photonics
inferred← citeshttps://doi.org/10.1063/5.0087379openalex-snapshot
Ge–Ge0.92Sn0.08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
inferred← citeshttps://doi.org/10.1063/5.0124720openalex-snapshot
Dark current in monolithic extended-SWIR GeSn PIN photodetectors
inferred← citeshttps://doi.org/10.1063/5.0166799openalex-snapshot
Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques
inferred← citeshttps://doi.org/10.1063/5.0197018openalex-snapshot
Extended short-wave infrared high-speed all-GeSn PIN photodetectors on silicon
inferred← citeshttps://doi.org/10.1063/5.0218623openalex-snapshot
Defects in Ge and GeSn and their impact on optoelectronic properties
inferred← citeshttps://doi.org/10.1063/5.0219035openalex-snapshot
Room-temperature photonic quantum computing in integrated silicon photonics with germanium–silicon single-photon avalanche diodes
inferred← citeshttps://doi.org/10.1063/5.0297302openalex-snapshot
Ultrafast carrier dynamics in GeSn/GeSi quantum wells with inter-subband resonances
inferred← citeshttps://doi.org/10.1088/1361-6463/abe1e8openalex-snapshot
Composition uniformity and large degree of strain relaxation in MBE-grown thick GeSn epitaxial layers, containing 16% Sn
inferred← citeshttps://doi.org/10.1088/1361-6463/ad32f5openalex-snapshot
Investigation of temperature and H2 on GePb/Ge multiple quantum well growth
inferred← citeshttps://doi.org/10.1088/1361-6641/ab9846openalex-snapshot
Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors
inferred← citeshttps://doi.org/10.1088/1361-6641/ad9f9fopenalex-snapshot
Resonant-cavity-enhanced Ge/Ge1− xSnx metal-semiconductor-metal photodetector for 2 μm-band applications
inferred← citeshttps://doi.org/10.1103/physrevapplied.20.064001openalex-snapshot
Radiative carrier lifetime in Ge1−xSnx midinfrared emitters
inferred← citeshttps://doi.org/10.1103/physrevmaterials.7.074604openalex-snapshot
Photoconductivity of GeSn thin films with up to 15% Sn content
inferred← citeshttps://doi.org/10.1109/ipcon.2019.8908424openalex-snapshot
25 GHz Bandwidth High Speed Photodiode for Two-Micron Wavelength Application
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Negative Photoconductivity Engineering in High-Sn GeSn/InP Heterostructures Enabling Record-Breaking Photoresponse for Short Wave Infrared Detection
inferred← citeshttps://doi.org/10.1109/jphot.2021.3065223openalex-snapshot
High-Performance GeSn Photodetector Covering All Telecommunication Bands
inferred← citeshttps://doi.org/10.1109/jphotov.2023.3282707openalex-snapshot
Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon
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Simulation of High-Efficiency Resonant-Cavity-Enhanced GeSn Single-Photon Avalanche Photodiodes for Sensing and Optical Quantum Applications
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Design of Mid-Infrared Ge 1–x Sn x Homojunction p-i-n Photodiodes on Si Substrate
inferred← citeshttps://doi.org/10.1109/jstqe.2021.3078894openalex-snapshot
High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection
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Design of Mid-Infrared Ge 1-x Sn x /Ge Heterojunction Photodetectors on GeSnOI Platform With a Bandwidth Exceeding 100 GHz
inferred← citeshttps://doi.org/10.1109/jstqe.2024.3476178openalex-snapshot
Research Progress of GeSn Photodetectors for Infrared Application
inferred← citeshttps://doi.org/10.1109/lsens.2024.3512942openalex-snapshot
High-Responsivity Waveguide-Integrated ${{\mathbf{G}{{\mathbf{e}}_{1 - {\bm{x}}}}\mathbf{S}{{\mathbf{n}}_{\bm{x}}}}}/{{\mathbf{Ge}}}$-Based p-i-n Photodetectors on Silicon Platform for Short-Wave Infrared Applications
inferred← citeshttps://doi.org/10.1109/mwp.2019.8892042openalex-snapshot
Si-Based GeSn Photodetector for Mid-Infrared Integrated Microwave Photonics
inferred← citeshttps://doi.org/10.1109/ted.2020.3004123openalex-snapshot
Effects of Annealing on the Behavior of Sn in GeSn Alloy and GeSn-Based Photodetectors
inferred← citeshttps://doi.org/10.1109/ted.2022.3145776openalex-snapshot
Monolithic Waveguide-Integrated Group IV Multiple-Quantum-Well Photodetectors on 300 mm Si Substrates
inferred← citeshttps://doi.org/10.1109/ted.2022.3200299openalex-snapshot
Monolithic Waveguide Group IV Multiple-Quantum-Well Photodetectors and Modulators on 300-mm Si Substrates for 2-μm Wavelength Optoelectronic Integrated Circuit
inferred← citeshttps://doi.org/10.1109/ted.2024.3450434openalex-snapshot
Response-Enhanced GeSn Photodetectors Realized by Photon Trapping Holes Array
inferred← citeshttps://doi.org/10.1116/6.0003563openalex-snapshot
Role of tin clustering in band structure and thermodynamic stability of GeSn by atomistic modeling
inferred← citeshttps://doi.org/10.1116/6.0003619openalex-snapshot
GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting
inferred← citeshttps://doi.org/10.1116/6.0003689openalex-snapshot
Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates
inferred← citeshttps://doi.org/10.1117/12.2546601openalex-snapshot
The effect of two-photon absorption on the dynamic range of integrated microwave photonics links
inferred← citeshttps://doi.org/10.1126/science.adg8017openalex-snapshot
Metamaterial graphene photodetector with bandwidth exceeding 500 gigahertz
inferred← citeshttps://doi.org/10.1186/s43074-026-00244-4openalex-snapshot
High-speed and broadband $$\upmu$$TP-heterogeneously integrated InGaAs/GaAsSb photodetectors for next-generation optical interconnects
inferred← citeshttps://doi.org/10.1364/ao.470247openalex-snapshot
TiN-GST-TiN all-optical reflection modulator for the 2 µm wave band reaching 85% efficiency
inferred← citeshttps://doi.org/10.1364/ao.495046openalex-snapshot
Silicon-based compact eight-channel wavelength and mode division (de)multiplexer for on-chip optical interconnects
inferred← citeshttps://doi.org/10.1364/cleo_si.2020.sth4l.1openalex-snapshot
High-efficiency photo detection at 2 µm realized by GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructure
inferred← citeshttps://doi.org/10.1364/oe.27.026924openalex-snapshot
Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band
inferred← citeshttps://doi.org/10.1364/oe.389378openalex-snapshot
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm
inferred← citeshttps://doi.org/10.1364/oe.409944openalex-snapshot
Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate
inferred← citeshttps://doi.org/10.1364/oe.415987openalex-snapshot
Hole array enhanced dual-band infrared photodetection
inferred← citeshttps://doi.org/10.1364/oe.420543openalex-snapshot
Surface plasmon enhanced GeSn photodetectors operating at 2 µm
inferred← citeshttps://doi.org/10.1364/ofc.2023.w2a.4openalex-snapshot
Silicon Photonic Tunable Flat-top Filters based on CROW Structures at 2-µm Spectral Range
inferred← citeshttps://doi.org/10.1364/ol.381960openalex-snapshot
GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2 µm wavelength band
inferred← citeshttps://doi.org/10.1364/ol.383171openalex-snapshot
Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base
inferred← citeshttps://doi.org/10.1364/ol.419302openalex-snapshot
High-speed and high-responsivity p-i-n waveguide photodetector at a 2 µm wavelength with a Ge0.92Sn0.08/Ge multiple-quantum-well active layer
inferred← citeshttps://doi.org/10.1364/ol.434044openalex-snapshot
GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 µm and 1.55 µm optical communication bands
inferred← citeshttps://doi.org/10.1364/ol.497530openalex-snapshot
On-chip Y-junction with adaptive power splitting toward ultrabroad bandwidth
inferred← citeshttps://doi.org/10.1364/ol.515378openalex-snapshot
On-chip germanium photodetector with interleaved junctions for the 2-µm wave band
inferred← citeshttps://doi.org/10.1364/ome.571419openalex-snapshot
Structural and electrical characterization of short-wave infrared GeSn diodes [Invited]
inferred← citeshttps://doi.org/10.1364/optcon.550225openalex-snapshot
GeSnC-based multi-quantum well heterojunction p-i-n photodetectors for short wave infrared (SWIR) spectrum
inferred← citeshttps://doi.org/10.1364/optica.6.000884openalex-snapshot
High-speed uni-traveling carrier photodiode for 2 μm wavelength application
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30 GHz GeSn photodetector on SOI substrate for 2 µm wavelength application
inferred← citeshttps://doi.org/10.1364/prj.491763openalex-snapshot
Ge 0.92 Sn 0.08 /Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate
inferred← citeshttps://doi.org/10.1364/prj.508024openalex-snapshot
High-responsivity on-chip waveguide coupled germanium photodetector for 2 μm waveband
inferred← citeshttps://doi.org/10.1364/prj.514764openalex-snapshot
High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system
inferred← citeshttps://doi.org/10.1515/nanoph-2020-0547openalex-snapshot
Silicon–germanium receivers for short‐wave‐infrared optoelectronics and communications
inferred← citeshttps://doi.org/10.23919/ofc49934.2023.10116544openalex-snapshot
Silicon Photonic Tunable Flat-top Filters based on CROW Structures at 2-μm Spectral Range
inferred← citeshttps://doi.org/10.32657/10356/153305openalex-snapshot
Photonic structure enhancement on photodetection
inferred← citeshttps://doi.org/10.32657/10356/155164openalex-snapshot
High-efficiency germanium-tin photodetectors for two micrometer applications
inferred← citeshttps://doi.org/10.32657/10356/155659openalex-snapshot
High-performance GE/GESN photodetectors in near- and mid-infrared range
inferred← citeshttps://doi.org/10.3389/fmats.2019.00278openalex-snapshot
Study of GeSn Mid-infrared Photodetectors for High Frequency Applications
inferred← citeshttps://doi.org/10.3390/app10228087openalex-snapshot
Characterization and Optimal Design of Silicon-Rich Nitride Nonlinear Waveguides for 2 μm Wavelength Band
inferred← citeshttps://doi.org/10.3390/app11083398openalex-snapshot
Theoretical Investigation of Responsivity/NEP Trade-off in NIR Graphene/Semiconductor Schottky Photodetectors Operating at Room Temperature
inferred← citeshttps://doi.org/10.3390/ma15030989openalex-snapshot
Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density
inferred← citeshttps://doi.org/10.3390/mi13101733openalex-snapshot
Germanium-Tin (GeSn) Metal-Semiconductor-Metal (MSM) Near-Infrared Photodetectors
inferred← citeshttps://doi.org/10.3390/nano11102556openalex-snapshot
Review of Si-Based GeSn CVD Growth and Optoelectronic Applications
inferred← citeshttps://doi.org/10.3390/nano12030485openalex-snapshot
Optical Interconnects Finally Seeing the Light in Silicon Photonics: Past the Hype
inferred← citeshttps://doi.org/10.3390/photonics8010014openalex-snapshot
Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR Applications
inferred← citeshttps://doi.org/10.3390/s23177531openalex-snapshot
Dark Current Analysis on GeSn p-i-n Photodetectors
inferred← citeshttps://doi.org/10.35848/1347-4065/abef10openalex-snapshot
Germanium–tin (Ge 1– x Sn x ) photodetectors for 2 μ m wavelength band
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