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UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices

https://doi.org/10.1364/ome.9.003277

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1007/s11664-016-4402-zopenalex-snapshot

Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD4 Gas Mixing

inferredcites →https://doi.org/10.1016/0001-6160(82)90004-9openalex-snapshot

On the ostwald ripening theory

inferredcites →https://doi.org/10.1016/j.apsusc.2019.03.062openalex-snapshot

Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications

inferredcites →https://doi.org/10.1016/j.jcrysgro.2017.01.041openalex-snapshot

Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas

inferredcites →https://doi.org/10.1016/j.jcrysgro.2017.05.006openalex-snapshot

Impact of thickness on the structural properties of high tin content GeSn layers

inferredcites →https://doi.org/10.1016/j.phpro.2015.09.078openalex-snapshot

Thermal Stability of Ge/GeSn Nanostructures Grown by MBE on (001) Si/Ge Virtual Wafers

inferredcites →https://doi.org/10.1016/j.tsf.2011.10.114openalex-snapshot

Growth of silicon based germanium tin alloys

inferredcites →https://doi.org/10.1021/acsphotonics.6b00258openalex-snapshot

Optically Pumped GeSn Microdisk Lasers on Si

inferredcites →https://doi.org/10.1021/acsphotonics.7b00938openalex-snapshot

Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

inferredcites →https://doi.org/10.1021/ja0115058openalex-snapshot

Synthesis of Silicon-Based Infrared Semiconductors in the Ge−Sn System Using Molecular Chemistry Methods

inferredcites →https://doi.org/10.1038/nphoton.2014.321openalex-snapshot

Lasing in direct-bandgap GeSn alloy grown on Si

inferredcites →https://doi.org/10.1038/s41598-017-16356-8openalex-snapshot

Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge1−xSnx epilayers

inferredcites →https://doi.org/10.1039/b618416bopenalex-snapshot

New classes of Si-based photonic materials and device architectures via designer molecular routes

inferredcites →https://doi.org/10.1039/c5ce01841bopenalex-snapshot

In situ X-ray diffraction study on the formation of α-Sn in nanocrystalline Sn-based electrodes for lithium-ion batteries

inferredcites →https://doi.org/10.1063/1.125187openalex-snapshot

High-quality Ge epilayers on Si with low threading-dislocation densities

inferredcites →https://doi.org/10.1063/1.2403903openalex-snapshot

Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures

inferredcites →https://doi.org/10.1063/1.3645620openalex-snapshot

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

inferredcites →https://doi.org/10.1063/1.3658632openalex-snapshot

Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy

inferredcites →https://doi.org/10.1063/1.366690openalex-snapshot

Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1

inferredcites →https://doi.org/10.1063/1.4800448openalex-snapshot

Photoconductivity of germanium tin alloys grown by molecular beam epitaxy

inferredcites →https://doi.org/10.1063/1.4892302openalex-snapshot

Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

inferredcites →https://doi.org/10.1063/1.4896788openalex-snapshot

Ge1-ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

inferredcites →https://doi.org/10.1063/1.4898597openalex-snapshot

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

inferredcites →https://doi.org/10.1063/1.4903540openalex-snapshot

Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

inferredcites →https://doi.org/10.1063/1.4966141openalex-snapshot

An optically pumped 2.5 μ m GeSn laser on Si operating at 110 K

inferredcites →https://doi.org/10.1063/1.5000353openalex-snapshot

Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μ m up to 180 K

inferredcites →https://doi.org/10.1088/1361-6641/aa7fc7openalex-snapshot

Strain engineering in epitaxial Ge 1− x Sn x : a path towards low-defect and high Sn-content layers

inferredcites →https://doi.org/10.1088/1674-1056/23/8/088112openalex-snapshot

Epitaxial growth of Ge1–xSnxfilms withxup to 0.14 grown on Ge (00l) at low temperature

inferredcites →https://doi.org/10.1149/05009.0885ecstopenalex-snapshot

Epitaxial Growth of Ge1-xSnx by Reduced Pressure CVD Using SnCl4 and Ge2H6

inferredcites →https://doi.org/10.1149/06406.0711ecstopenalex-snapshot

Growth and Characterization of Epitaxial Ge 1-X Sn x Alloys and Heterostructures Using a Commercial CVD System

inferredcites →https://doi.org/10.1149/06905.0279ecstopenalex-snapshot

Enhancement of Material Quality of (Si)GeSn Films Grown by SnCl4 Precursor

inferredcites →https://doi.org/10.1149/2.006305jssopenalex-snapshot

Reduced Pressure CVD Growth of Ge and Ge 1−x Sn x Alloys

inferredcites →https://doi.org/10.1364/oe.22.011029openalex-snapshot

Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy

inferredcites →https://doi.org/10.1364/opn.27.1.000032openalex-snapshot

Group IV Photonics: Driving Integrated Optoelectronics

inferredcites →https://doi.org/10.3389/fmats.2015.00030openalex-snapshot

Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System

inferredcites →https://doi.org/10.5445/ir/1000077376openalex-snapshot

Free-running Sn precipitates : An efficient phase separation mechanism for metastable Ge$_{1-x}$Sn$_{x}$ epilayers

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

inferred← citeshttps://doi.org/10.2139/ssrn.4653522openalex-extracted

Sputtering-Grown Intrinsic Gesn/Ge Multiple Quantum Wells on N-Ge for Low-Cost Visible/Shortwave Infrared Dual-Band Photodetection

inferred← citeshttps://doi.org/10.1002/pssr.202100554openalex-snapshot

Rational Control of GeSn Nanowires

inferred← citeshttps://doi.org/10.1007/s10854-024-14197-6openalex-snapshot

Fabrication and characterization of ferroelectric junctionless GOI and GeSnOI transistors for low-power applications

inferred← citeshttps://doi.org/10.1007/s10854-026-17040-2openalex-snapshot

Evolution and outlook of GeSn infrared photodetectors: structural engineering perspectives—a review

inferred← citeshttps://doi.org/10.1016/j.apsusc.2023.157086openalex-snapshot

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.159673openalex-snapshot

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

inferred← citeshttps://doi.org/10.1016/j.jallcom.2021.163273openalex-snapshot

Investigation of Sn-containing precursors for in-plane GeSn nanowire growth

inferred← citeshttps://doi.org/10.1016/j.jallcom.2022.164068openalex-snapshot

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2020.125996openalex-snapshot

Highly strained Ge1-xSnx alloy films with high Sn compositions grown by MBE

inferred← citeshttps://doi.org/10.1016/j.jcrysgro.2021.126065openalex-snapshot

Epitaxial growth of metastable semiconductor alloys

inferred← citeshttps://doi.org/10.1016/j.mssp.2023.107515openalex-snapshot

Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics

inferred← citeshttps://doi.org/10.1021/acs.cgd.0c00270openalex-snapshot

Dislocation Pipe Diffusion and Solute Segregation during the Growth of Metastable GeSn

inferred← citeshttps://doi.org/10.1021/acsaelm.3c00112openalex-snapshot

Isothermal Heteroepitaxy of Ge1–xSnx Structures for Electronic and Photonic Applications

inferred← citeshttps://doi.org/10.1063/5.0213230openalex-snapshot

High-quality Ge1−xSnx (x = 0–0.11) realized by UHV-CVD using Ge2H6 and SnCl4: Materials growth, structural/optical properties, and prototype IR photodetectors

inferred← citeshttps://doi.org/10.1088/1361-6463/acaf39openalex-snapshot

Secondary epitaxy of high Sn fraction GeSn layer on strain-relaxed GeSn virtue substrate by molecular beam epitaxy

inferred← citeshttps://doi.org/10.1088/1361-6463/acd4cbopenalex-snapshot

Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature

inferred← citeshttps://doi.org/10.1088/1361-6463/ae6b99openalex-snapshot

Tunable direct bandgap photoluminescence of GeSn grown on Ge/Si(100) substrate by molecular beam epitaxy growth

inferred← citeshttps://doi.org/10.1088/1361-6641/abf908openalex-snapshot

High-speed short-wave infrared Si-based GeSn MQW phototransistor: an alternative to existing photodetectors

inferred← citeshttps://doi.org/10.1088/1402-4896/ad6bccopenalex-snapshot

Photoelectric conversion performance of Ga0.47In0.53As/Ge0.79Sn0.21 dual-junction thermophotovoltaic cell

inferred← citeshttps://doi.org/10.1088/2053-1591/ab96fbopenalex-snapshot

Facile synthesis of Ge1−xSnx nanowires

inferred← citeshttps://doi.org/10.1088/2515-7647/ac1ef4openalex-snapshot

2022 Roadmap on integrated quantum photonics

inferred← citeshttps://doi.org/10.1109/jstqe.2024.3456439openalex-snapshot

Composition Quantification of SiGeSn Alloys Through Time-of-Flight Secondary Ion Mass Spectrometry: Calibration Methodologies and Validation With Atom Probe Tomography

inferred← citeshttps://doi.org/10.1116/6.0003566openalex-snapshot

In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

inferred← citeshttps://doi.org/10.1116/6.0003798openalex-snapshot

Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor

inferred← citeshttps://doi.org/10.1117/12.2546601openalex-snapshot

The effect of two-photon absorption on the dynamic range of integrated microwave photonics links

inferred← citeshttps://doi.org/10.1149/2162-8777/ab80afopenalex-snapshot

PECVD Growth of Composition Graded SiGeSn Thin Films as Novel Approach to Limit Tin Segregation

inferred← citeshttps://doi.org/10.1149/2162-8777/adcc4fopenalex-snapshot

Gas Phase Reactions Determined by In Situ Mass Spectrometric Investigation for GeSn Chemical Vapor Deposition Processes

inferred← citeshttps://doi.org/10.11591/eei.v10i3.3041openalex-snapshot

Decreasing CCT deviation of white light emitting diodes by employing SiO2 nanoparticles

inferred← citeshttps://doi.org/10.1364/ome.564114openalex-snapshot

In-situ real-time monitoring of GeSn growth using UHV-CVD to achieve high-quality material with lasing at 2250 nm and 100 K [Invited]

inferred← citeshttps://doi.org/10.26686/wgtn.14331653openalex-snapshot

Facile synthesis of Ge1-x Snx nanowires

inferred← citeshttps://doi.org/10.26686/wgtn.14331653.v1openalex-snapshot

Facile synthesis of Ge1-x Snx nanowires

inferred← citeshttps://doi.org/10.3389/fmats.2019.00278openalex-snapshot

Study of GeSn Mid-infrared Photodetectors for High Frequency Applications

inferred← citeshttps://doi.org/10.3390/electronics14234646openalex-snapshot

Fabrication and Characterization of Back-Gate and Front-Gate Ge-on-Insulator Transistors for Low-Power Applications

inferred← citeshttps://doi.org/10.3390/ma12172662openalex-snapshot

High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application

inferred← citeshttps://doi.org/10.3390/ma14247637openalex-snapshot

Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%

inferred← citeshttps://doi.org/10.3390/nano11102556openalex-snapshot

Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

inferred← citeshttps://doi.org/10.3390/nano12060981openalex-snapshot

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

inferred← citeshttps://doi.org/10.3390/nano13101701openalex-snapshot

Spark Discharge Synthesis and Characterization of Ge/Sn Janus Nanoparticles

inferred← citeshttps://doi.org/10.35848/1882-0786/abdac4openalex-snapshot

Non-equilibrium solid-phase growth of amorphous GeSn layer on Ge-on-insulator wafer induced by flash lamp annealing

inferred← citeshttps://doi.org/10.35848/1882-0786/ac1a47openalex-snapshot

Flash lamp annealing processing to improve the performance of high-Sn content GeSn n-MOSFETs

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