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The Role of Polymers in Halide Perovskite Resistive Switching Devices
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Outgoing claims: the papers this work cites, builds on, or argues with.
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Air‐Stable Cesium Lead Iodide Perovskite for Ultra‐Low Operating Voltage Resistive Switching
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Low‐Dimensional Lead‐Free Inorganic Perovskites for Resistive Switching with Ultralow Bias
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Layered (C 6 H 5 CH 2 NH 3 ) 2 CuBr 4 Perovskite for Multilevel Storage Resistive Switching Memory
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Stretchable Conductive Polymers and Composites Based on PEDOT and PEDOT:PSS
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Patterning Technologies for Metal Halide Perovskites: A Review
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Metal‐Halide Perovskite Design for Next‐Generation Memories: First‐Principles Screening and Experimental Verification
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Progress and Perspectives Beyond Traditional RAFT Polymerization
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A Redox‐Based Resistive Switching Memory Device Consisting of Organic–Inorganic Hybrid Perovskite/Polymer Composite Thin Film
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Thermoelectric Properties of PEDOT:PSS
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Robust and Transient Write‐Once‐Read‐Many‐Times Memory Device Based on Hybrid Perovskite Film with Novel Room Temperature Molten Salt Solvent
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Large Resistive Switching and Artificial Synaptic Behaviors in Layered Cs3Sb2I9 Lead‐Free Perovskite Memory Devices
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Lead‐Free Sodium–Indium Double Perovskite Nanocrystals through Doping Silver Cations for Bright Yellow Emission
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Transient Resistive Switching for Nonvolatile Memory Based on Water‐Soluble Cs 4 PbBr 6 Perovskite Films
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Lead‐Free Dual‐Phase Halide Perovskites for Preconditioned Conducting‐Bridge Memory
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Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
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Recent Advances toward High‐Efficiency Halide Perovskite Light‐Emitting Diodes: Review and Perspective
inferredcites →https://doi.org/10.1002/solr.202000783openalex-snapshot
Role and Contribution of Polymeric Additives in Perovskite Solar Cells: Crystal Growth Templates and Grain Boundary Passivators
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Interface-type resistive switching in perovskite materials
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Preparation of graphene oxide-polypyrrole-polyvinylferrocene ternary nanocomposite and its resistive-switching characteristic
inferredcites →https://doi.org/10.1016/j.apsusc.2018.12.124openalex-snapshot
Multiple resistive switching behaviours of CH3NH3PbI3 perovskite film with different metal electrodes
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Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices
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Bipolar resistive switching and nonvolatile memory effect in poly (3-hexylthiophene) –carbon nanotube composite films
inferredcites →https://doi.org/10.1016/j.cej.2022.139495openalex-snapshot
Efficient inverted CsPbI3 perovskite solar cells fabricated in common air
inferredcites →https://doi.org/10.1016/j.ceramint.2020.08.075openalex-snapshot
Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device
inferredcites →https://doi.org/10.1016/j.isci.2018.10.020openalex-snapshot
Perovskite Photovoltaic Modules: Life Cycle Assessment of Pre-industrial Production Process
inferredcites →https://doi.org/10.1016/j.jallcom.2022.167117openalex-snapshot
Electrochemical preparation of polypyrrole-Ag nanoparticles composite film and its resistive switching properties
inferredcites →https://doi.org/10.1016/j.jcis.2019.06.076openalex-snapshot
Tunneling of photon-generated carrier in the interface barrier induced resistive switching memory behaviour
inferredcites →https://doi.org/10.1016/j.jechem.2018.12.005openalex-snapshot
Two dimensional metal halide perovskites: Promising candidates for light-emitting diodes
inferredcites →https://doi.org/10.1016/j.jobe.2017.10.005openalex-snapshot
Integration of BIM and LCA: Evaluating the environmental impacts of building materials at an early stage of designing a typical office building
inferredcites →https://doi.org/10.1016/j.mattod.2021.10.035openalex-snapshot
Vertically aligned two-dimensional halide perovskites for reliably operable artificial synapses
inferredcites →https://doi.org/10.1016/j.orgel.2020.105628openalex-snapshot
Simultaneous protonation/deprotonation mechanism in polyaniline-based devices as complementary resistive switches
inferredcites →https://doi.org/10.1016/j.orgel.2022.106730openalex-snapshot
Demonstration of high-stable bipolar resistive switching and bio-inspired synaptic characteristics using PEDOT:PSS-based memristor devices
inferredcites →https://doi.org/10.1016/j.physe.2019.113577openalex-snapshot
Ge2Sb2Te5 nanobelts by femtosecond laser direct writing for resistive switching devices
inferredcites →https://doi.org/10.1016/j.rser.2020.110207openalex-snapshot
Alternatives assessment of perovskite solar cell materials and their methods of fabrication
inferredcites →https://doi.org/10.1016/j.solmat.2021.111288openalex-snapshot
Life cycle assessment of high-performance monocrystalline titanium dioxide nanorod-based perovskite solar cells
inferredcites →https://doi.org/10.1016/j.sse.2017.11.012openalex-snapshot
A review of the Z 2 -FET 1T-DRAM memory: Operation mechanisms and key parameters
inferredcites →https://doi.org/10.1016/j.sysarc.2021.102276openalex-snapshot
A survey of SRAM-based in-memory computing techniques and applications
inferredcites →https://doi.org/10.1021/acs.jpcc.1c02203openalex-snapshot
Improvement of the Resistive Switching Characteristics upon Halide Mixing in an All-Inorganic RbPbI3 Perovskite Polymer Composite Based Flexible Device
inferredcites →https://doi.org/10.1021/acs.jpcc.7b06278openalex-snapshot
Interplay between Iodide and Tin Vacancies in CsSnI3 Perovskite Solar Cells
inferredcites →https://doi.org/10.1021/acs.macromol.1c00665openalex-snapshot
Organic Polymers as Additives in Perovskite Solar Cells
inferredcites →https://doi.org/10.1021/acsami.1c13210openalex-snapshot
Oxide Passivation of Halide Perovskite Resistive Memory Device: A Strategy for Overcoming Endurance Problem
inferredcites →https://doi.org/10.1021/acsami.2c04752openalex-snapshot
Water-Soluble Polythiophene-Conjugated Polyelectrolyte-Based Memristors for Transient Electronics
inferredcites →https://doi.org/10.1021/acsami.6b15149openalex-snapshot
Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device
inferredcites →https://doi.org/10.1021/acsami.7b08197openalex-snapshot
Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius
inferredcites →https://doi.org/10.1021/acsami.8b07079openalex-snapshot
Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1–xBixI3 Perovskite-Based Memory Device
inferredcites →https://doi.org/10.1021/acsami.9b09080openalex-snapshot
Air-Stable Lead-Free Perovskite Thin Film Based on CsBi3I10 and Its Application in Resistive Switching Devices
inferredcites →https://doi.org/10.1021/acsanm.0c02457openalex-snapshot
Memory Devices via Unipolar Resistive Switching in Symmetric Organic–Inorganic Perovskite Nanoscale Heterolayers
inferredcites →https://doi.org/10.1021/acsmaterialslett.0c00036openalex-snapshot
Remote Tuning of Bandgap and Emission of Lead Perovskites by Spatially Controlled Halide Exchange Reactions
inferredcites →https://doi.org/10.1021/acsnano.6b01643openalex-snapshot
Flexible Hybrid Organic–Inorganic Perovskite Memory
inferredcites →https://doi.org/10.1021/acssuschemeng.9b07168openalex-snapshot
Environmentally Friendly Resistive Switching Memory Devices with DNA as the Active Layer and Bio-Based Polyethylene Furanoate as the Substrate
inferredcites →https://doi.org/10.1038/ncomms2784openalex-snapshot
Nanobatteries in redox-based resistive switches require extension of memristor theory
inferredcites →https://doi.org/10.1038/s41427-020-0202-2openalex-snapshot
Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109
inferredcites →https://doi.org/10.1038/s41467-019-09909-0openalex-snapshot
Pb clustering and PbI2 nanofragmentation during methylammonium lead iodide perovskite degradation
inferredcites →https://doi.org/10.1038/s41598-017-12579-xopenalex-snapshot
Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film
inferredcites →https://doi.org/10.1038/s41893-021-00737-zopenalex-snapshot
Life cycle assessment of recycling strategies for perovskite photovoltaic modules
inferredcites →https://doi.org/10.1039/c5dt03969jopenalex-snapshot
High-efficiency bulk heterojunction memory devices fabricated using organometallic halide perovskite:poly(N-vinylcarbazole) blend active layers
inferredcites →https://doi.org/10.1039/c9cs00598fopenalex-snapshot
Materials chemistry and engineering in metal halide perovskite lasers
inferredcites →https://doi.org/10.1039/d0gc00878hopenalex-snapshot
Aqueous phase fabrication and conversion of Pb(OH)Br into a CH 3 NH 3 PbBr 3 perovskite and its application in resistive memory switching devices
inferredcites →https://doi.org/10.1039/d0nr08214gopenalex-snapshot
Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems
inferredcites →https://doi.org/10.1039/d0nr09234gopenalex-snapshot
Optically tunable ultra-fast resistive switching in lead-free methyl-ammonium bismuth iodide perovskite films
inferredcites →https://doi.org/10.1039/d0tc03639kopenalex-snapshot
The strategies of filament control for improving the resistive switching performance
inferredcites →https://doi.org/10.1039/d1nr03245copenalex-snapshot
A layered ( n -C 4 H 9 NH 3 ) 2 CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio
inferredcites →https://doi.org/10.1039/d2se00096bopenalex-snapshot
New insights into the environmental performance of perovskite-on-silicon tandem solar cells – a life cycle assessment of industrially manufactured modules
inferredcites →https://doi.org/10.1063/1.4976709openalex-snapshot
A facile synthesis of CH3NH3PbBr3 perovskite quantum dots and their application in flexible nonvolatile memory
inferredcites →https://doi.org/10.1063/1.5013929openalex-snapshot
Polyaniline-based memristive microdevice with high switching rate and endurance
inferredcites →https://doi.org/10.1063/1.5047800openalex-snapshot
Challenges in materials and devices for resistive-switching-based neuromorphic computing
inferredcites →https://doi.org/10.1063/1.5053160openalex-snapshot
Zn vacancy complex-determined filamentary resistive switching characteristics in Au/ZnSe/ITO chalcogenide-based memory cells
inferredcites →https://doi.org/10.1063/1.5066586openalex-snapshot
Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory
inferredcites →https://doi.org/10.1063/1.5124915openalex-snapshot
Reliability of analog resistive switching memory for neuromorphic computing
inferredcites →https://doi.org/10.1063/1.5130914openalex-snapshot
Unraveling the origin of resistive switching behavior in organolead halide perovskite based memory devices
inferredcites →https://doi.org/10.1063/5.0009666openalex-snapshot
Graphene mediated resistive switching and thermoelectric behavior in lanthanum cobaltate
inferredcites →https://doi.org/10.1063/5.0010045openalex-snapshot
Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stack
inferredcites →https://doi.org/10.1088/0268-1242/29/10/104004openalex-snapshot
TiO 2 -based memristors and ReRAM: materials, mechanisms and models (a review)
inferredcites →https://doi.org/10.1088/1361-6463/ab2e9eopenalex-snapshot
Advances in resistive switching based memory devices
inferredcites →https://doi.org/10.1088/2053-1591/ab17b5openalex-snapshot
Role of point defects in hybrid phase TiO2 for resistive random-access memory (RRAM)
inferredcites →https://doi.org/10.1109/led.2017.2736541openalex-snapshot
Natural Local Self-Boosting Effect in 3D NAND Flash Memory
inferredcites →https://doi.org/10.1109/tcsi.2019.2945617openalex-snapshot
In-Memory Low-Cost Bit-Serial Addition Using Commodity DRAM Technology
inferredcites →https://doi.org/10.1109/tcsi.2021.3064189openalex-snapshot
Challenges and Trends of SRAM-Based Computing-In-Memory for AI Edge Devices
inferredcites →https://doi.org/10.1126/sciadv.abg0633openalex-snapshot
Efficient and stable inverted perovskite solar cells with very high fill factors via incorporation of star-shaped polymer
inferredcites →https://doi.org/10.1145/2745844.2745848openalex-snapshot
A Large-Scale Study of Flash Memory Failures in the Field
inferredcites →https://doi.org/10.1186/s11671-021-03636-6openalex-snapshot
Light-activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices
inferredcites →https://doi.org/10.3390/electronics7060082openalex-snapshot
Design of High-Security USB Flash Drives Based on Chaos Authentication
inferredcites →https://doi.org/10.3390/nano10061155openalex-snapshot
Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device
inferredcites →https://doi.org/10.3390/nano11020359openalex-snapshot
Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction
inferredcites →https://doi.org/10.3390/nano9081124openalex-snapshot
Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process
inferredcites →https://doi.org/10.3390/polym14122472openalex-snapshot
Electrical Conductivities of Narrow-Bandgap Polymers with Two Types of π-Conjugated Post-Crosslinking
inferredcites →https://doi.org/10.3938/jkps.55.1009openalex-snapshot
Nonvolatile Unipolar and Bipolar Resistive SwitchingCharacteristics in Co-doped TiO$_{2}$ Thin Films with DifferentCompliance Currents
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.2139/ssrn.4700422openalex-extracted
Polyvinylpyrrolidone-Induced Evolution of Morphological and Electrical Properties in Mapbi3-Xclx Perovskite for Low Voltage Resistive Random-Access Memory Elements
inferred← citeshttps://doi.org/10.1002/aelm.202400067openalex-snapshot
Unraveling Conductive Filament Formation in High Performance Halide Perovskite Memristor
inferred← citeshttps://doi.org/10.1002/cnma.202300484openalex-snapshot
An Overview on Lead Halide Perovskite based Composites and Heterostructures: Synthesis and Applications
inferred← citeshttps://doi.org/10.1002/pssa.202300612openalex-snapshot
Implementation of Stable Nonvolatile Resistive Switching Behaviors in TiO2 Nanoparticle‐Incorporated 2D Layered Halide Perovskite‐Based Devices
inferred← citeshttps://doi.org/10.1007/s10854-025-16233-5openalex-snapshot
Resistive switching behaviour in polyaniline-CNT ReRAM device
inferred← citeshttps://doi.org/10.1007/s13391-025-00597-1openalex-snapshot
Halide Perovskite: The Key to Overcoming von Neumann Bottlenecks in AI Workloads
inferred← citeshttps://doi.org/10.1016/j.apsadv.2023.100538openalex-snapshot
Active polymer-based halide perovskites for light-driven applications: A review
inferred← citeshttps://doi.org/10.1016/j.jallcom.2023.171886openalex-snapshot
Effect of HBr additive on the performance of all-inorganic Cs3Bi2Br9 halide perovskite resistive switching memory
inferred← citeshttps://doi.org/10.1016/j.meaene.2024.100005openalex-snapshot
A review of interface engineering characteristics for high performance perovskite solar cells
inferred← citeshttps://doi.org/10.1016/j.mtsust.2025.101239openalex-snapshot
Flexible and lead-free halide perovskite ReRAM: Toward sustainable and adaptive memory devices
inferred← citeshttps://doi.org/10.1021/acs.jpclett.3c00991openalex-snapshot
Polyethylene-Glycol-Modified Halide Perovskite for Enhancing the Switching Ratio and Cycling Stability of Resistive Random Access Memory
inferred← citeshttps://doi.org/10.1021/acsaem.5c02467openalex-snapshot
Low-Power Bidirectional Threshold Switching Characteristics of Ambient-Stable Rb18Cu31Cl49─Poly(methyl methacrylate) Composite Memristor Devices
inferred← citeshttps://doi.org/10.1039/d3nr03874bopenalex-snapshot
Polymer-enhanced perovskite oxide-based photocatalysts: a review
inferred← citeshttps://doi.org/10.1063/5.0237386openalex-snapshot
Emerging materials for resistive switching memories: Prospects for enhanced sustainability and performance for targeted applications
inferred← citeshttps://doi.org/10.1109/nsens71111.2026.11663123openalex-snapshot
Interfacial Polymer Engineering Stabilizes Fading Memory in Perovskite Optoelectronic Reservoirs
inferred← citeshttps://doi.org/10.1140/epjp/s13360-025-06018-4openalex-snapshot
Improved resistive switching behaviour in Ag–ZrO2 nanocomposite film
inferred← citeshttps://doi.org/10.1142/s1793604725510026openalex-snapshot
Bipolar resistive switching in MAPbI3−xClx mixed halide perovskite with polyvinylpyrrolidone additives
inferred← citeshttps://doi.org/10.3390/cryst13121634openalex-snapshot
Building Manganese Halide Hybrid Materials with 0D, 1D, and 2D Dimensionalities
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