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Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
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Inhibition of Ion Migration for Reliable Operation of Organolead Halide Perovskite‐Based Metal/Semiconductor/Metal Broadband Photodetectors
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Multicolored Organic/Inorganic Hybrid Perovskite Light‐Emitting Diodes
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Resistive Switching Behavior in Organic–Inorganic Hybrid CH 3 NH 3 PbI 3 −x Cl x Perovskite for Resistive Random Access Memory Devices
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Organometal Halide Perovskite Artificial Synapses
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Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching
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First Fiber‐Shaped Non‐Volatile Memory Device Based on Hybrid Organic–Inorganic Perovskite
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A Fast Deposition‐Crystallization Procedure for Highly Efficient Lead Iodide Perovskite Thin‐Film Solar Cells
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Interstitial and vacancy mediated transport mechanisms in perovskites: A comparison of chemistry and potentials
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Flexible Hybrid Organic–Inorganic Perovskite Memory
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Semiconducting Tin and Lead Iodide Perovskites with Organic Cations: Phase Transitions, High Mobilities, and Near-Infrared Photoluminescent Properties
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Design, Structure, and Optical Properties of Organic−Inorganic Perovskites Containing an Oligothiophene Chromophore
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Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices
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Superior Photovoltaic Properties of Lead Halide Perovskites: Insights from First-Principles Theory
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Anomalous Hysteresis in Perovskite Solar Cells
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Ionic transport in hybrid lead iodide perovskite solar cells
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Giant switchable photovoltaic effect in organometal trihalide perovskite devices
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Lead Iodide Perovskite Sensitized All-Solid-State Submicron Thin Film Mesoscopic Solar Cell with Efficiency Exceeding 9%
inferredcites →https://doi.org/10.1039/a608415jopenalex-snapshot
Synthesis and structure of a new layered organic–inorganic compound containing unique chains of PbI2
inferredcites →https://doi.org/10.1039/c3ee43822hopenalex-snapshot
Formamidinium lead trihalide: a broadly tunable perovskite for efficient planar heterojunction solar cells
inferredcites →https://doi.org/10.1039/c4ee02465fopenalex-snapshot
Hysteresis and transient behavior in current–voltage measurements of hybrid-perovskite absorber solar cells
inferredcites →https://doi.org/10.1039/c6ee02650hopenalex-snapshot
Superflexible, high-efficiency perovskite solar cells utilizing graphene electrodes: towards future foldable power sources
inferredcites →https://doi.org/10.1039/c6tc02503jopenalex-snapshot
Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH 3 NH 3 PbI 3−x Cl x /FTO structure
inferredcites →https://doi.org/10.1063/1.4790837openalex-snapshot
In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory
inferredcites →https://doi.org/10.1063/1.4864778openalex-snapshot
Unusual defect physics in CH3NH3PbI3 perovskite solar cell absorber
inferredcites →https://doi.org/10.1088/0957-4484/25/42/425204openalex-snapshot
Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films
inferredcites →https://doi.org/10.1126/science.1243167openalex-snapshot
Long-Range Balanced Electron- and Hole-Transport Lengths in Organic-Inorganic CH 3 NH 3 PbI 3
inferredcites →https://doi.org/10.1126/science.267.5203.1473openalex-snapshot
Conducting Layered Organic-inorganic Halides Containing 〈110〉-Oriented Perovskite Sheets
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Incoming claims: where this work appears in other papers’ reference lists and arguments.
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Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory
inferred← citeshttps://doi.org/10.1021/acsanm.4c06039openalex-snapshot
Flexible Memristors for Implantable Applications
inferred← citeshttps://doi.org/10.1021/acsanm.8b01928openalex-snapshot
Insertion of Nanoscale AgInSbTe Layer between the Ag Electrode and the CH3NH3PbI3 Electrolyte Layer Enabling Enhanced Multilevel Memory
inferred← citeshttps://doi.org/10.1021/acsnano.2c05436openalex-snapshot
Room-Temperature Fabricated Multilevel Nonvolatile Lead-Free Cesium Halide Memristors for Reconfigurable In-Memory Computing
inferred← citeshttps://doi.org/10.1021/acsnano.4c07869openalex-snapshot
Self-Rectifying Resistive Memory with a Ferroelectric and 2D Perovskite Lateral Heterostructure
inferred← citeshttps://doi.org/10.1021/acsnano.6c04620openalex-snapshot
From Filamentary Failure to Durable Halide Perovskite Memristors
inferred← citeshttps://doi.org/10.1021/acsphotonics.0c01952openalex-snapshot
Ligand-Assisted Sulfide Surface Treatment of CsPbI3 Perovskite Quantum Dots to Increase Photoluminescence and Recovery
inferred← citeshttps://doi.org/10.1038/s41427-020-0202-2openalex-snapshot
Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109
inferred← citeshttps://doi.org/10.1038/s41565-024-01790-3openalex-snapshot
Linearly programmable two-dimensional halide perovskite memristor arrays for neuromorphic computing
inferred← citeshttps://doi.org/10.1038/s44287-025-00197-zopenalex-snapshot
Artificial nerve systems for use in bio-interactive prostheses
inferred← citeshttps://doi.org/10.1039/c7nr05582jopenalex-snapshot
Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite
inferred← citeshttps://doi.org/10.1039/c7tc05326fopenalex-snapshot
Emerging perovskite materials for high density data storage and artificial synapses
inferred← citeshttps://doi.org/10.1039/c7tc05658copenalex-snapshot
Low-dimensional halide perovskites: review and issues
inferred← citeshttps://doi.org/10.1039/c8cp03945copenalex-snapshot
Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites
inferred← citeshttps://doi.org/10.1039/c8cs00614hopenalex-snapshot
Organic and hybrid resistive switching materials and devices
inferred← citeshttps://doi.org/10.1039/c8nr00863aopenalex-snapshot
Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage
inferred← citeshttps://doi.org/10.1039/c9nr00438fopenalex-snapshot
Effect of interlayer spacing in layered perovskites on resistive switching memory
inferred← citeshttps://doi.org/10.1039/c9tc02233copenalex-snapshot
Metal halide perovskites for resistive switching memory devices and artificial synapses
inferred← citeshttps://doi.org/10.1039/d0nr09234gopenalex-snapshot
Optically tunable ultra-fast resistive switching in lead-free methyl-ammonium bismuth iodide perovskite films
inferred← citeshttps://doi.org/10.1039/d0tc02579hopenalex-snapshot
Resistive switching performance of fibrous crosspoint memories based on an organic–inorganic halide perovskite
inferred← citeshttps://doi.org/10.1039/d1cp02878bopenalex-snapshot
Enhanced resistive switching performance in yttrium-doped CH 3 NH 3 PbI 3 perovskite devices
inferred← citeshttps://doi.org/10.1039/d1cs00886bopenalex-snapshot
Nanostructured perovskites for nonvolatile memory devices
inferred← citeshttps://doi.org/10.1039/d1nh00292aopenalex-snapshot
ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing
inferred← citeshttps://doi.org/10.1039/d1nr03245copenalex-snapshot
A layered ( n -C 4 H 9 NH 3 ) 2 CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio
inferred← citeshttps://doi.org/10.1039/d1se00589hopenalex-snapshot
Research progress on two-dimensional (2D) halide organic–inorganic hybrid perovskites
inferred← citeshttps://doi.org/10.1039/d1tc06005hopenalex-snapshot
Multi-factor-controlled ReRAM devices and their applications
inferred← citeshttps://doi.org/10.1039/d2qm00614fopenalex-snapshot
Electrode dependence in halide perovskite memories: resistive switching behaviours
inferred← citeshttps://doi.org/10.1039/d3nr04633hopenalex-snapshot
Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers
inferred← citeshttps://doi.org/10.1039/d3tc02309eopenalex-snapshot
Perovskite material-based memristors for applications in information processing and artificial intelligence
inferred← citeshttps://doi.org/10.1039/d4ce00933aopenalex-snapshot
Ambient-stable and lead-free Cs 3 Bi 2 I 9− x Br x (0 ≤ x ≤ 9) perovskite films for memristor devices
inferred← citeshttps://doi.org/10.1039/d4nr01395fopenalex-snapshot
Highly stable two-dimensional Ruddlesden–Popper perovskite-based resistive switching memory devices
inferred← citeshttps://doi.org/10.1039/d5cs01222hopenalex-snapshot
From solar cells to memristors: halide perovskites as a platform for neuromorphic electronics
inferred← citeshttps://doi.org/10.1039/d5mh00534eopenalex-snapshot
Decoding halide perovskites for neuromorphic and memristive devices
inferred← citeshttps://doi.org/10.1039/d5tc00303bopenalex-snapshot
A low-power filamentary memristor crossbar array enabled via cubic α-phase stabilized mixed-cation lead halide perovskites
inferred← citeshttps://doi.org/10.1063/1.5087594openalex-snapshot
Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots
inferred← citeshttps://doi.org/10.1063/1.5109525openalex-snapshot
Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
inferred← citeshttps://doi.org/10.1063/5.0049161openalex-snapshot
Halide perovskite two-terminal analog memristor capable of photo-activated synaptic weight modulation for neuromorphic computing
inferred← citeshttps://doi.org/10.1063/5.0093943openalex-snapshot
Flexible resistive switching device based on air-stable lead-free Cu3SbI6 perovskite film for nonvolatile memory application
inferred← citeshttps://doi.org/10.1063/5.0149389openalex-snapshot
Lead-free CsCu2Br3 perovskite for multilevel resistive switching memory
inferred← citeshttps://doi.org/10.1063/5.0170984openalex-snapshot
Memristors with tunable characteristics based on the tellurene/Nb-doped MoS2 heterojunction toward bio-realistic synaptic emulation
inferred← citeshttps://doi.org/10.1063/5.0320703openalex-snapshot
Understanding and engineering metal halide perovskite memristors: Progress and perspectives
inferred← citeshttps://doi.org/10.1088/1361-6528/ab59edopenalex-snapshot
Roadmap on halide perovskite and related devices
inferred← citeshttps://doi.org/10.1088/1361-6528/abfd58openalex-snapshot
Controllable high-performance memristors based on 2D Fe 2 GeTe 3 oxide for biological synapse imitation
inferred← citeshttps://doi.org/10.1088/1361-6641/ac1564openalex-snapshot
Rapid microwave annealing of CH 3 NH 3 PbI 3 with controllable crystallization for enhancing the resistive-switching performance
inferred← citeshttps://doi.org/10.1088/1402-4896/ad8d15openalex-snapshot
Optimization of the memristor fabrication based on graph convolutional network
inferred← citeshttps://doi.org/10.1088/1674-1056/ab75daopenalex-snapshot
Optoelectronic memristor for neuromorphic computing*
inferred← citeshttps://doi.org/10.1088/2053-1591/aacd8aopenalex-snapshot
Mechanical strain effects on resistive switching of flexible polymer thin films embedded with ZnO nanoparticles
inferred← citeshttps://doi.org/10.1088/2053-1591/aafbceopenalex-snapshot
Light-induced effects on crystal size and photo-stability of colloidal CsPbBr3 perovskite nanocrystals
inferred← citeshttps://doi.org/10.1088/2058-8585/ae4ca1openalex-snapshot
Flexible memristors for next-generation electronics: materials, fabrication and applications
inferred← citeshttps://doi.org/10.1149/1945-7111/ace338openalex-snapshot
Structural, Photophysical, and Transport Properties of Porous MAPbBr3 Single Nanowire and Nanodevice for Electrochemical Sensing
inferred← citeshttps://doi.org/10.21203/rs.3.rs-67676/v1openalex-snapshot
Electric Modulation of Conduction in MAPbBr3 Single Crystals
inferred← citeshttps://doi.org/10.21203/rs.3.rs-67676/v2openalex-snapshot
Electric modulation of conduction in MAPbBr3 single crystals
inferred← citeshttps://doi.org/10.3390/mi11100905openalex-snapshot
Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
inferred← citeshttps://doi.org/10.3390/nano10061155openalex-snapshot
Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device
inferred← citeshttps://doi.org/10.3390/nano13172477openalex-snapshot
Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System
inferred← citeshttps://doi.org/10.3390/nano14050391openalex-snapshot
Progress and Application of Halide Perovskite Materials for Solar Cells and Light Emitting Devices
inferred← citeshttps://doi.org/10.3390/polym15051067openalex-snapshot
The Role of Polymers in Halide Perovskite Resistive Switching Devices
inferred← citeshttps://doi.org/10.5772/intechopen.100784openalex-snapshot
Information Systems Management
inferred← citeshttps://doi.org/10.5772/intechopen.109206openalex-snapshot
Hybrid Perovskite-Based Memristor Devices
inferred← citeshttps://doi.org/10.6035/14104.2023.804973openalex-snapshot
Hysteresis Control in Hybrid Perovskite-based Devices for Photovoltaic and Neuromorphic Computing Applications
inferred← citeshttps://doi.org/10.61343/jcm.v3i02.104openalex-snapshot
An Effective Supramolecular Mg(II)-Metallohydrogel based Non-Volatile Memory Device with Supreme Endurance
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