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Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters
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What this work says
Outgoing claims: the papers this work cites, builds on, or argues with.
inferredcites →https://doi.org/10.1002/1521-396x(200105)185:1<79::aid-pssa79>3.0.co;2-8openalex-snapshot
Electrolyte-Solution-Gate FETs Using Diamond Surface for Biocompatible Ion Sensors
inferredcites →https://doi.org/10.1007/s11664-010-1500-1openalex-snapshot
Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3
inferredcites →https://doi.org/10.1016/j.diamond.2012.01.020openalex-snapshot
Development of AlN/diamond heterojunction field effect transistors
inferredcites →https://doi.org/10.1016/j.diamond.2012.10.007openalex-snapshot
Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2
inferredcites →https://doi.org/10.1016/j.diamond.2014.10.004openalex-snapshot
Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond
inferredcites →https://doi.org/10.1016/j.microrel.2007.02.012openalex-snapshot
Electrical measurements of voltage stressed Al2O3/GaAs MOSFET
inferredcites →https://doi.org/10.1038/srep06395openalex-snapshot
Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric
inferredcites →https://doi.org/10.1063/1.1564293openalex-snapshot
Fermi level on hydrogen terminated diamond surfaces
inferredcites →https://doi.org/10.1063/1.2889947openalex-snapshot
Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance
inferredcites →https://doi.org/10.1063/1.3603002openalex-snapshot
Controllable giant dielectric constant in AlOx/TiOy nanolaminates
inferredcites →https://doi.org/10.1063/1.364299openalex-snapshot
Investigation of the effect of hydrogen on electrical and optical properties in chemical vapor deposited on homoepitaxial diamond films
inferredcites →https://doi.org/10.1063/1.3673574openalex-snapshot
A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor
inferredcites →https://doi.org/10.1063/1.370315openalex-snapshot
A study on the capacitance–voltage characteristics of metal-Ta2O5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications
inferredcites →https://doi.org/10.1063/1.4772985openalex-snapshot
Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond
inferredcites →https://doi.org/10.1063/1.4790838openalex-snapshot
Tailoring dielectric relaxation in ultra-thin high-dielectric constant nanolaminates for nanoelectronics
inferredcites →https://doi.org/10.1063/1.4811810openalex-snapshot
Interface-controlled high dielectric constant Al2O3/TiOx nanolaminates with low loss and low leakage current density for new generation nanodevices
inferredcites →https://doi.org/10.1063/1.4819108openalex-snapshot
Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors
inferredcites →https://doi.org/10.1063/1.4820143openalex-snapshot
Normally-off HfO2-gated diamond field effect transistors
inferredcites →https://doi.org/10.1063/1.4894291openalex-snapshot
Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor
inferredcites →https://doi.org/10.1063/1.4930294openalex-snapshot
Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors
inferredcites →https://doi.org/10.1063/1.4939650openalex-snapshot
Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond
inferredcites →https://doi.org/10.1088/0022-3727/46/31/315304openalex-snapshot
Effect of interfacial Si oxidation on interface dipoles in HfO2/Si structures
inferredcites →https://doi.org/10.1088/0022-3727/47/24/245102openalex-snapshot
Diamond field effect transistors with a high-dielectric constant Ta 2 O 5 as gate material
inferredcites →https://doi.org/10.1088/0034-4885/42/10/001openalex-snapshot
Optical absorption and luminescence in diamond
inferredcites →https://doi.org/10.1103/physrevb.23.3050openalex-snapshot
Hole-drift velocity in natural diamond
inferredcites →https://doi.org/10.1103/physrevb.68.041304openalex-snapshot
Surface band bending and surface conductivity of hydrogenated diamond
inferredcites →https://doi.org/10.1109/led.2006.876325openalex-snapshot
Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz
inferredcites →https://doi.org/10.1109/led.2011.2114871openalex-snapshot
Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions
inferredcites →https://doi.org/10.1109/led.2012.2210020openalex-snapshot
Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz
inferredcites →https://doi.org/10.1109/led.2014.2356191openalex-snapshot
Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV
inferredcites →https://doi.org/10.1109/t-ed.1980.19908openalex-snapshot
Standardized terminology for oxide charges associated with thermally oxidized silicon
inferredcites →https://doi.org/10.1126/science.1060258openalex-snapshot
Ultraviolet Emission from a Diamond pn Junction
inferredcites →https://doi.org/10.1126/science.241.4868.913openalex-snapshot
Low-Pressure, Metastable Growth of Diamond and "Diamondlike" Phases
inferredcites →https://doi.org/10.1143/jjap.34.l551openalex-snapshot
Fermi Level Pinning in Metal-Insulator-Diamond Structures
inferredcites →https://doi.org/10.1143/jjap.41.2611openalex-snapshot
RF Performance of High Transconductance and High-Channel-Mobility Surface-Channel Polycrystalline Diamond Metal-Insulator-Semiconductor Field-Effect Transistors
inferredcites →https://doi.org/10.1143/jjap.51.090112openalex-snapshot
Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al 2 O 3 Passivation Layer
inferredcites →https://doi.org/10.1149/1.2766918openalex-snapshot
Study of MOS Capacitors with Annealed TiO2 Gate Dielectric Layer
inferredcites →https://doi.org/10.1557/mrs.2014.100openalex-snapshot
Doping and interface of homoepitaxial diamond for electronic applications
inferredcites →https://doi.org/10.1557/mrs.2014.95openalex-snapshot
Diamond surface conductivity: Properties, devices, and sensors
inferredcites →https://doi.org/10.3938/jkps.50.1827openalex-snapshot
Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method
What points at this work
Incoming claims: where this work appears in other papers’ reference lists and arguments.
inferred← citeshttps://doi.org/10.1002/advs.202104599openalex-snapshot
Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors
inferred← citeshttps://doi.org/10.1002/ifm2.31openalex-snapshot
Reliability challenges of gate dielectric materials in transistors
inferred← citeshttps://doi.org/10.1002/pssa.201900462openalex-snapshot
Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors
inferred← citeshttps://doi.org/10.1002/pssa.70471openalex-snapshot
Electrical Properties of H‐Diamond Field Effect Transistor With ZrO 2 /HfO 2 Stacked‐Gate Deposited by Electron Beam
inferred← citeshttps://doi.org/10.1002/pssr.202400242openalex-snapshot
Enhanced Threshold Voltage and Improved Subthreshold Swing Using NiOX/ITO Reverse Bias Gated Diamond pMOS
inferred← citeshttps://doi.org/10.1007/978-3-031-47556-6_13openalex-snapshot
Hydrogen-Terminated Diamond MOS Capacitors, MOSFETs, and MOSFET Logic Circuits
inferred← citeshttps://doi.org/10.1007/s12034-023-03140-wopenalex-snapshot
Diamond matter-enabled low-leakage conductance to achieve the balanced dielectric properties of PVDF/ZrC/diamond blend films
inferred← citeshttps://doi.org/10.1007/s12613-019-1843-4openalex-snapshot
Recent progress in diamond-based MOSFETs
inferred← citeshttps://doi.org/10.1016/j.apsusc.2024.161231openalex-snapshot
Structural design and electronic performance at MO /diamond (M = Hf, Zr, Ti, Al, Sc, Y) interfaces for MOS device applications
inferred← citeshttps://doi.org/10.1016/j.apsusc.2026.166711openalex-snapshot
Normally-off hydrogen-terminated diamond FETs with Al2O3 dielectric thin film deposited by electron beam evaporation
inferred← citeshttps://doi.org/10.1016/j.carbon.2020.10.031openalex-snapshot
Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for MOS Capacitors and MOSFETs
inferred← citeshttps://doi.org/10.1016/j.carbon.2021.01.121openalex-snapshot
Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate
inferred← citeshttps://doi.org/10.1016/j.carbon.2022.08.056openalex-snapshot
Electrical properties of cerium hexaboride gate hydrogen-terminated diamond field effect transistor with normally-off characteristics
inferred← citeshttps://doi.org/10.1016/j.carbon.2022.09.001openalex-snapshot
High performance diamond-based solar-blind photodetectors enabled by Schottky barrier modulation
inferred← citeshttps://doi.org/10.1016/j.chip.2023.100072openalex-snapshot
Wide bandgap semiconductor-based integrated circuits
inferred← citeshttps://doi.org/10.1016/j.diamond.2017.11.016openalex-snapshot
Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al
inferred← citeshttps://doi.org/10.1016/j.diamond.2021.108547openalex-snapshot
Normally-off polycrystalline CH diamond MISFETs with MgF2 gate insulator and passivation
inferred← citeshttps://doi.org/10.1016/j.diamond.2022.109003openalex-snapshot
Diamond inverter consisted of high mobility and low on-resistance enhancement-mode C H diamond MISFET
inferred← citeshttps://doi.org/10.1016/j.diamond.2023.110204openalex-snapshot
Study on low-frequency noise characteristics of hydrogen-terminated diamond FETs
inferred← citeshttps://doi.org/10.1016/j.diamond.2023.110745openalex-snapshot
Gate leakage suppression of normally-OFF diamond FET by employing MOS-MES hybrid gate structure
inferred← citeshttps://doi.org/10.1016/j.diamond.2024.110905openalex-snapshot
Improved performance of H-diamond MOSFETs with ZrO2/Al2O3 gate dielectric stacks deposited by electron beam method
inferred← citeshttps://doi.org/10.1016/j.diamond.2024.111460openalex-snapshot
Numerical investigation of diamond complementary logic integrated circuits
inferred← citeshttps://doi.org/10.1016/j.diamond.2025.112504openalex-snapshot
Low-leakage-current and improved thermal stability of normally-OFF hydrogen-terminated diamond FET via boron nitride passivation
inferred← citeshttps://doi.org/10.1016/j.diamond.2026.113623openalex-snapshot
The DC and RF performance evaluation of normally-off diamond field-effect transistors with SiO2/Al2O3 dielectric layers
inferred← citeshttps://doi.org/10.1016/j.diamond.2026.114012openalex-snapshot
TiO2/Al2O3 bi-layer gate dielectric-based H-terminated diamond MOSFET: Improved mobility by mitigation of remote Coulomb scattering
inferred← citeshttps://doi.org/10.1016/j.mee.2025.112348openalex-snapshot
An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications
inferred← citeshttps://doi.org/10.1016/j.mssp.2025.110105openalex-snapshot
Compositional control and electrical performance of atomic layer deposited Al2O3/TiO2 nanolaminates
inferred← citeshttps://doi.org/10.1016/j.surfcoat.2020.125991openalex-snapshot
Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization
inferred← citeshttps://doi.org/10.1039/d0tc02063jopenalex-snapshot
Atomic layer deposition of high- κ layers on polycrystalline diamond for MOS devices: a review
inferred← citeshttps://doi.org/10.1063/1.5037925openalex-snapshot
Hydrogen-terminated polycrystalline diamond MOSFETs with Al2O3 passivation layers grown by atomic layer deposition at different temperatures
inferred← citeshttps://doi.org/10.1063/5.0002120openalex-snapshot
Hydrogen-terminated diamond field-effect transistor with a bilayer dielectric of HfSiON/Al2O3
inferred← citeshttps://doi.org/10.1063/5.0023662openalex-snapshot
A hybrid self-aligned MIS-MESFET architecture for improved diamond-based transistors
inferred← citeshttps://doi.org/10.1063/5.0077530openalex-snapshot
Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric
inferred← citeshttps://doi.org/10.1063/5.0085935openalex-snapshot
Solution-processed tin oxide thin film for normally-off hydrogen terminated diamond field effect transistor
inferred← citeshttps://doi.org/10.1063/5.0171832openalex-snapshot
Mobility-enhanced normally off hydrogen-terminated diamond FET with low interface state density using Al2O3/Nd gate stack
inferred← citeshttps://doi.org/10.1063/5.0188372openalex-snapshot
Impact of water vapor annealing treatments on Al2O3/diamond interface
inferred← citeshttps://doi.org/10.1063/5.0221365openalex-snapshot
Very low subthreshold swing normally-off diamond FET and its logic inverters
inferred← citeshttps://doi.org/10.1063/5.0270223openalex-snapshot
A perspective on diamond heterojunction devices
inferred← citeshttps://doi.org/10.1080/26941112.2025.2551496openalex-snapshot
Hydrogen-terminated and oxygen-terminated diamond metal-oxide-semiconductor field-effect transistors
inferred← citeshttps://doi.org/10.1080/26941112.2026.2718535openalex-snapshot
Recent Research Advances and Challenges in Diamond Electronic Devices
inferred← citeshttps://doi.org/10.1088/1361-6463/ab1e31openalex-snapshot
Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °C
inferred← citeshttps://doi.org/10.1109/access.2020.2968742openalex-snapshot
Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3Gate Dielectrics
inferred← citeshttps://doi.org/10.1109/access.2020.2979985openalex-snapshot
Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al 2 O 3 Gate Dielectric
inferred← citeshttps://doi.org/10.1109/iciea65512.2025.11148766openalex-snapshot
Gate Oxide Insulators on Surface-Channeled Diamond for Metal-Oxide-Semiconductor Electronic Devices
inferred← citeshttps://doi.org/10.1109/icmts.2019.8730974openalex-snapshot
High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited]
inferred← citeshttps://doi.org/10.1109/jeds.2018.2880005openalex-snapshot
High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors
inferred← citeshttps://doi.org/10.1109/jeds.2019.2915250openalex-snapshot
High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
inferred← citeshttps://doi.org/10.1109/led.2022.3160354openalex-snapshot
−400 mA mm−1Drain Current Density Normally-Off Polycrystalline Diamond MOSFETs
inferred← citeshttps://doi.org/10.1109/ted.2020.3025515openalex-snapshot
Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiO x Gate Materials
inferred← citeshttps://doi.org/10.1109/ted.2021.3075394openalex-snapshot
Structural and Electrical Characteristics of ALD-TiO2/SiON/n-Si Gate-Stack for Advanced CMOS Device Applications
inferred← citeshttps://doi.org/10.1109/ted.2022.3147738openalex-snapshot
High Mobility Normally-OFF Hydrogenated Diamond Field Effect Transistors With BaF₂ Gate Insulator Formed by Electron Beam Evaporator
inferred← citeshttps://doi.org/10.1109/ted.2022.3174047openalex-snapshot
Large V TH of Normally-OFF Field Effect Transistor With Yttrium Gate Material Directly Deposited on Hydrogen-Terminated Diamond
inferred← citeshttps://doi.org/10.1109/ted.2022.3184280openalex-snapshot
Small Subthreshold Swing Diamond Field Effect Transistors With SnO 2 Gate Dielectric
inferred← citeshttps://doi.org/10.1109/ted.2022.3204518openalex-snapshot
Single Crystalline Diamond p-Channel Cascode and Inverter
inferred← citeshttps://doi.org/10.1109/ted.2022.3218521openalex-snapshot
Normally-off C-H Diamond FETs With Partial Al/C-O Diamond Junction Attaining Low off-State Current
inferred← citeshttps://doi.org/10.1109/ted.2023.3339109openalex-snapshot
Hydrogen-Terminated Diamond Field-Effect Transistors With 1011 ON/ OFF Ratio Using an Al2O3/HfO2 Stacked Passivation Layer
inferred← citeshttps://doi.org/10.1109/ted.2024.3358257openalex-snapshot
Electrical Characteristics of H-Diamond Transistors With ZrO2/Zr Stacked Dielectrics Deposited by Electron Beam Evaporation
inferred← citeshttps://doi.org/10.1109/ted.2025.3563146openalex-snapshot
Monolithically Integrated Hydrogen-Terminated Diamond FET Logic Circuits
inferred← citeshttps://doi.org/10.1109/ted.2026.3701863openalex-snapshot
Reduced Operating Voltage and Enhanced Endurance in Defect-Engineered HZO MFS Ferroelectric Capacitors With Nondestructive Read
inferred← citeshttps://doi.org/10.21203/rs.3.rs-2706824/v1openalex-snapshot
Hydrogen-Terminated Diamond Field-Effect Transistors with Ultrahigh On/Off Ratio Using an Al2O3/HfO2 Stacked Passivation Layer
inferred← citeshttps://doi.org/10.3390/cryst13010061openalex-snapshot
The Effects of Annealing Temperatures and Dimethylformamide Doses on Porous TiO2 Films
inferred← citeshttps://doi.org/10.3390/cryst13091298openalex-snapshot
The Possibility of Layered Non-Van Der Waals Boron Group Oxides: A First-Principles Perspective
inferred← citeshttps://doi.org/10.3390/ma15072557openalex-snapshot
Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate
inferred← citeshttps://doi.org/10.3390/ma15145082openalex-snapshot
Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn
inferred← citeshttps://doi.org/10.3390/ma17143437openalex-snapshot
A Review of Diamond Materials and Applications in Power Semiconductor Devices
inferred← citeshttps://doi.org/10.3390/ma19163529openalex-snapshot
Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors
inferred← citeshttps://doi.org/10.3390/s18061813openalex-snapshot
An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors
inferred← citeshttps://doi.org/10.7567/jjap.57.04fr01openalex-snapshot
Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer
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