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High Mobility Normally-OFF Hydrogenated Diamond Field Effect Transistors With BaF₂ Gate Insulator Formed by Electron Beam Evaporator

https://doi.org/10.1109/ted.2022.3147738

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What this work says

Outgoing claims: the papers this work cites, builds on, or argues with.

inferredcites →https://doi.org/10.1002/aelm.201800832openalex-snapshot

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

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Physics of Semiconductor Devices

inferredcites →https://doi.org/10.1016/j.carbon.2021.01.121openalex-snapshot

Normally-off hydrogen-terminated diamond field effect transistor with yttrium gate

inferredcites →https://doi.org/10.1016/j.diamond.2017.11.016openalex-snapshot

Normally-off hydrogen-terminated diamond field-effect transistor with Al2O3 dielectric layer formed by thermal oxidation of Al

inferredcites →https://doi.org/10.1016/j.diamond.2018.11.019openalex-snapshot

Heterointerface properties of diamond MOS structures studied using capacitance–voltage and conductance–frequency measurements

inferredcites →https://doi.org/10.1016/s0167-5729(97)80002-7openalex-snapshot

Hydrogen-terminated diamond surfaces and interfaces

inferredcites →https://doi.org/10.1038/s41598-019-41082-8openalex-snapshot

Hydrogen-terminated diamond field-effect transistor with AlOx dielectric layer formed by autoxidation

inferredcites →https://doi.org/10.1038/s41598-022-05180-4openalex-snapshot

An enhanced two-dimensional hole gas (2DHG) C–H diamond with positive surface charge model for advanced normally-off MOSFET devices

inferredcites →https://doi.org/10.1038/s41928-021-00689-4openalex-snapshot

High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

inferredcites →https://doi.org/10.1038/srep31585openalex-snapshot

Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics

inferredcites →https://doi.org/10.1063/1.1471939openalex-snapshot

Spectral profile of the two-photon absorption coefficients in CaF2 and BaF2

inferredcites →https://doi.org/10.1063/1.4811668openalex-snapshot

Metal oxide semiconductor structure using oxygen-terminated diamond

inferredcites →https://doi.org/10.1063/1.4819108openalex-snapshot

Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors

inferredcites →https://doi.org/10.1063/1.4820143openalex-snapshot

Normally-off HfO2-gated diamond field effect transistors

inferredcites →https://doi.org/10.1063/1.4930294openalex-snapshot

Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors

inferredcites →https://doi.org/10.1063/1.4983091openalex-snapshot

Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

inferredcites →https://doi.org/10.1063/1.4985066openalex-snapshot

Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters

inferredcites →https://doi.org/10.1063/1.5066052openalex-snapshot

Radiofrequency performance of hydrogenated diamond MOSFETs with alumina

inferredcites →https://doi.org/10.1063/1.5100328openalex-snapshot

Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations

inferredcites →https://doi.org/10.1063/1.5143982openalex-snapshot

Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator

inferredcites →https://doi.org/10.1063/5.0021785openalex-snapshot

Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method

inferredcites →https://doi.org/10.1103/physrevb.69.125338openalex-snapshot

Recovery of surface conductivity of H-terminated diamond after thermal annealing in vacuum

inferredcites →https://doi.org/10.1109/edssc.2019.8754272openalex-snapshot

RF Performance of Hydrogenated Single Crystal Diamond MOSFETs

inferredcites →https://doi.org/10.1109/jeds.2018.2880005openalex-snapshot

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

inferredcites →https://doi.org/10.1109/led.2017.2661340openalex-snapshot

Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

inferredcites →https://doi.org/10.1109/led.2017.2702744openalex-snapshot

Logic Circuits With Hydrogenated Diamond Field-Effect Transistors

inferredcites →https://doi.org/10.1109/led.2019.2912211openalex-snapshot

Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation

inferredcites →https://doi.org/10.1109/led.2020.2972330openalex-snapshot

An Enhancement-Mode Hydrogen-Terminated Diamond Field-Effect Transistor With Lanthanum Hexaboride Gate Material

inferredcites →https://doi.org/10.1109/ted.2020.3025515openalex-snapshot

Normally Off Hydrogen-Terminated Diamond Field-Effect Transistor With Ti/TiO x Gate Materials

inferredcites →https://doi.org/10.1109/ted.2021.3086458openalex-snapshot

A Study of Linearity of C-H Diamond FETs forS-Band Power Application

inferredcites →https://doi.org/10.1116/1.4802478openalex-snapshot

New method for determining flat-band voltage in high mobility semiconductors

inferredcites →https://doi.org/10.1126/science.1074374openalex-snapshot

High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

inferredcites →https://doi.org/10.1143/jjap.37.l1444openalex-snapshot

Improved Stability of Metal-Insulator-Diamond Semiconductor Interface by Employing BaF2 Insulator Film

inferredcites →https://doi.org/10.1143/jjap.51.090111openalex-snapshot

High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation

What points at this work

Incoming claims: where this work appears in other papers’ reference lists and arguments.

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inferred← citeshttps://doi.org/10.1002/aelm.202400770openalex-snapshot

Extreme Enhancement‐Mode Operation Accumulation Channel Hydrogen‐Terminated Diamond FETs with Vth < −6 V and High on‐Current

inferred← citeshttps://doi.org/10.1002/pssa.70471openalex-snapshot

Electrical Properties of H‐Diamond Field Effect Transistor With ZrO 2 /HfO 2 Stacked‐Gate Deposited by Electron Beam

inferred← citeshttps://doi.org/10.1007/s42496-026-00310-xopenalex-snapshot

Lab-Grown Synthetic Diamonds for High Performing Electronic Components in the Aerospace Sector

inferred← citeshttps://doi.org/10.1016/j.apsusc.2022.153368openalex-snapshot

C-Si Interface on Sio2/(111) Diamond P-Mosfets with High Mobility and Excellent Normally-Off Operation

inferred← citeshttps://doi.org/10.1016/j.carbon.2022.08.056openalex-snapshot

Electrical properties of cerium hexaboride gate hydrogen-terminated diamond field effect transistor with normally-off characteristics

inferred← citeshttps://doi.org/10.1016/j.carbon.2023.118099openalex-snapshot

Normally-off operation in vertical diamond MOSFETs using an oxidized Si-terminated diamond channel

inferred← citeshttps://doi.org/10.1016/j.cplett.2025.142530openalex-snapshot

Influences of size and dimensionality on melting thermodynamics of group IVA semiconductors

inferred← citeshttps://doi.org/10.1016/j.diamond.2024.110905openalex-snapshot

Improved performance of H-diamond MOSFETs with ZrO2/Al2O3 gate dielectric stacks deposited by electron beam method

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Two-step fabrication of CNTs@PDMS via laser-textured template replication for highly efficient water purification and thermoelectricity

inferred← citeshttps://doi.org/10.1016/j.micrna.2026.208785openalex-snapshot

Towards practical applications: A review of hydrogen, oxygen-, and flourine-terminated and boron- and nitrogen-doped dimaond-based electronics devices

inferred← citeshttps://doi.org/10.1016/j.mssp.2024.108516openalex-snapshot

The heterointerface characterization of BaF2 or MgF2 on the hydrogenated diamond by X-ray photoelectron spectroscopy

inferred← citeshttps://doi.org/10.1016/j.mssp.2025.109426openalex-snapshot

Electrical properties of normally-on hydrogenated Si-terminated diamond field effect transistors

inferred← citeshttps://doi.org/10.1016/j.mssp.2026.110676openalex-snapshot

Analysis of hydrogen-terminated diamond FET with ohmic contacts formed via high-temperature hydrogen plasma treatment

inferred← citeshttps://doi.org/10.1016/j.mssp.2026.111157openalex-snapshot

The impact of HfO2 dielectric layers deposited at different temperatures on performance and reliability of hydrogen-terminated single-crystal diamond MOSFETs

inferred← citeshttps://doi.org/10.1021/acs.jpclett.4c02040openalex-snapshot

Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

inferred← citeshttps://doi.org/10.1039/d4ce01138dopenalex-snapshot

Facile controlled growth of multilayer h-BN thin films using spaced-confined APCVD and its gate dielectric application

inferred← citeshttps://doi.org/10.1063/5.0165596openalex-snapshot

High mobility hydrogen-terminated diamond FET with h-BN gate dielectric using pickup method

inferred← citeshttps://doi.org/10.1063/5.0171832openalex-snapshot

Mobility-enhanced normally off hydrogen-terminated diamond FET with low interface state density using Al2O3/Nd gate stack

inferred← citeshttps://doi.org/10.1063/5.0221365openalex-snapshot

Very low subthreshold swing normally-off diamond FET and its logic inverters

inferred← citeshttps://doi.org/10.1063/5.0282593openalex-snapshot

Structural and electronic properties of hydrogen-terminated diamond field-effect transistors with h-BN gate dielectric featuring native point defects

inferred← citeshttps://doi.org/10.1063/5.0323938openalex-snapshot

Effective lateral isolation for hydrogen-terminated diamond field-effect transistors via nitrogen ion implantation

inferred← citeshttps://doi.org/10.1080/26941112.2024.2357654openalex-snapshot

Recent advances in diamond MOSFETs with normally off characteristics

inferred← citeshttps://doi.org/10.1080/26941112.2026.2714621openalex-snapshot

Emerging oxidized silicon-terminated (C-Si-O) diamond field-effect transistors toward industrial applications

inferred← citeshttps://doi.org/10.1109/jphot.2025.3565277openalex-snapshot

Mechanism and Verification of Photoelectric Regulation Characteristics of Two-Dimensional Photodetectors

inferred← citeshttps://doi.org/10.1109/led.2025.3528120openalex-snapshot

Integration of Oxidized Silicon- and Hydrogen- Terminated Diamond p-Channels for Normally-Off High-Voltage Diamond Power Devices

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High-Gain Hydrogen-Terminated Diamond Logic Circuits With Low Power-Consumption

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Normally-Off Oxidized Si-Terminated (111) Diamond MOSFETs via ALD-Al2O3 Gate Insulator With Drain Current Density Over 300 mA/mm

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High Breakdown Electric Field Diamond Schottky Barrier Diode With SnO2 Field Plate

inferred← citeshttps://doi.org/10.1109/ted.2024.3369582openalex-snapshot

Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET

inferred← citeshttps://doi.org/10.1109/ted.2024.3496447openalex-snapshot

Normally-Off High-Performance Diamond FET With Large VTH and Low Leakage Current

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Monolithically Integrated Hydrogen-Terminated Diamond FET Logic Circuits

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A Review of Diamond Materials and Applications in Power Semiconductor Devices

inferred← citeshttps://doi.org/10.7498/aps.74.20250009openalex-snapshot

Channel analysis model and current hypersensitivity characteristics of diamondene-based transistor

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